Abstract: In an integrated circuit device having a highly doped bottom substrate layer of a first conductivity type, a lightly doped top layer of the first conductivity type formed on the substrate layer, a vertical MOSFET formed in the lightly doped top layer and a second circuit component, such as a CMOS, formed in the lightly doped top layer, there are further provided a guard ring and a recombination layer for preventing latchup of the second component by preventing minority carriers from moving from the vertical MOSFET to the second component. The guard ring is formed in the lightly doped top layer between the vertical MOSFET and the second component, and made of a second conductivity type single crystal semiconductor, or a first conductivity type polycrystalline silicon or an insulating material such as SiO.sub.2.

Abstract: A fusible link is described. It comprises a semiconductor substrate, an electrically insulating layer on the substrate, a pair of conductor elements on the surface of the insulating layer opposite the substrate, and a fuse conductor layer on the surface of the insulating layer opposite the substrate electrically connecting the conductor elements. A cavity is formed in the insulating layer and the substrate adjacent the fuse conductor layer. The cavity has a configuration to provide a substantial reduction in the thermal conductivity cross-section between the fuse conductor layer and the substrate. Such substantial reduction is selected to enable a predetermined electrical power input to the fuse conductor layer to generate an open circuit in the layer. In a preferred form, the cavity has a configuration to form a bridge comprised of the fuse conductor layer and the portion of the insulating layer upon which the fuse conductor layer is disposed.

Abstract: In a semiconductor device having a plurality of semiconductor layers of different composition, such as a hot electron transistor, in which respective layers are contacted to form a majority carrier injection electrode, a control electrode and a majority carrier extraction electrode, the layers forming the electrodes are separated from one another by separating layers or layer systems of different composition. These separating layers form potential barriers for the majority carriers. A problem with such known devices is that the layer forming the control electrode has to have a low resistance which has previously required a high doping concentration in this layer. This doping concentration however increases losses due to plasmon/phonon coupling and scattering and reduces the switching speed of the device.

Abstract: For preventing a field effect transistor from the short-channel effects, there is disclosed a field effect transistor comprising a channel region and source/drain regions deviating from the central portion of the channel region in the lateral direction of the field effect transistor, a gate electrode covered with an insulating film intervenes between the source/drain regions, so that the channel length is increased in length.

Abstract: A tunnel injection controlling type semiconductor device comprising a source semiconductor region having a certain conductivity type for supplying carriers, a drain semiconductor region for receiving the carriers, and a gate electrode for controlling the flow of these carriers. A highly-doped semiconductor region having a conductivity type opposite to that of the source semiconductor region is provided in contact with the source region or contained locally in the source region to cause tunnel injection of carriers. The potential level of this highly-doped region is varied by virtue of the static induction effect exerted by the voltage applied to the gate electrode which is provided at a site close to but separate from the highly-doped region, and to the drain semiconductor region.

Abstract: A metal stud (24) is provided for interconnecting levels of metallization separated by an insulator on a semiconductor slice (10). A lead (12) is coated with a refractory metal (14) and a platable metal cap (16). A photoresist (18 ) is then applied and a cavity (22) is formed within the photoresist (18 ). The cavity (22) is plated to form the stud (24). The stud (24) is clad with a corrosion resistant layer (28).

Abstract: A vertical heterojunction equal area transistor and starting structure therefor is provided in which three epitaxial layers structure with wide band gap external layers and narrower band gap center layer is provided with peripheral impurity concentrations such that the area around the wide gap electrodes is high resistivity and the area around the center narrower gap region is high conductivity. A bipolar transistor of GaAs-Ge-GaAs is described.

Abstract: A method and apparatus for use with an automatic working vehicle for detecting a boundary between a treated area and an untreated area. A predetermined range of working area including the treated area and the untreated area is photographed by a camera. Image data output from the camera is differentiated with respect to pixel to pixel brightness variations, which is then compared with a threshold value to produce edge image data on an X-Y plane showing, as binarized, a plurality of pixels regarded as representing a point of transition between the untreated area and the treated area, and other pixels. The boundary is calculated from the edge image data by means of HOUGH-transformation.

Abstract: A complementary semiconductor integrated circuit for absorbing a noise comprises an n-type semiconductor substrate maintained at a supply voltage, a p-type well maintained at the reference voltage potential, an n-type region formed in the n-type semiconductor substrate and connected to the supply voltage, a polysilicon layer formed on the n-type region through an insulating film and connected to the reference voltage, whereby a capacitance is formed by the n-type region and the polysilicon layer formed on the n-type region through the insulating film. A noise included in the supply voltage is absorbed by the capacitance.

Abstract: An integrated circuit in which a large potential can be maintained between the source of the device and the substrate on which this device and other devices are fabricated is described. The circuit employs a minority carrier sink region to remove minority carriers from the gate region of a MOS depletion device. The sink region is shielded from the substrate by a buried layer which prevents punch-through between the sink region and the substrate.

Abstract: A semiconductor light emitting heterostructure device is disclosed. The device comprises an n-type GaAs substrate, a first n-type laeyr of AlGaAs adjacent to the substrate, a second p-type light emitting AlGaAs layer adjacent to the first layer, and a third p-type AlGaAs layer suitable for bonding to an aluminum contact. The device starts with an n-type substrate which is more readily available and has a p-side up configuration which is more suitable for bonding to an aluminum contact.

Abstract: A hydraulic control system for a continuously variable transmission for an automotive vehicle, the transmission having a first and a second variable-diameter pulley provided on respective second shafts, a belt connecting the first and second pulleys, and a first and a second hydraulic cylinder for changing effective diameters of the pulleys. The system includes a first pressure regulating valve, a shift-control valve for applying the first line pressure to one of the cylinders, and a second pressure regulating valve for regulating a pressure of the fluid flowing from the other cylinder, and thereby establishing a second line pressure. The system further includes a control device for controlling the shift-control valve so that an actual speed ratio of the transmission coincides with a target speed ratio determined depending upon a running condition of the vehicle.

Abstract: A flexible beam lead tape having three layers having trace conductors, a dielectric and a ground plane. Vias extend through the dielectric layer at the first and second ends of the electrical conductors for providing versatile connections to either ends of the conductors. The ends of the conductors may be provided with electrical connections on either or both sides of the tape and may be connected by pressure contact or by bonding.

Abstract: An attachment for a portable computer comprising a rigid case having an interface card that is adapted to attach to the portable computer's expansion slot at one end and is adapted to attach to a standard PC expansion card at the other end. The case has room to insert a standard expansion card of 2/3 length or less. The case is sufficiently small that it may be attached to the bottom of the portable computer and still fit inside the original carrying case.

Abstract: An orthogonal chip mount system module (10) comprising a base module (12), an interconnect chip (14), orthogonal slots (16) and semiconductor chips (18) is provided. The interconnect chip (14) is fixed to the base module (12) by high thermal conductivity epoxy. The semiconductor chips (18) are interference fitted into the slots (16). Solder pads (20) on the semiconductor chips (18) are aligned with solder pads (22) on the interconnect chip (14) and the system module (10) is then heated to the reflow temperature of the solder forming joints (24).

Abstract: A standard cell array is disclosed having improved device isolation, customized metal routing under power busses, a gate array core cell having improved internal routing channels, and shared power busses. A fake gate is located adjacent a source of drain of a transistor within each cell, and is coupled to a supply voltage for isolating the transistors within each cell. Additional metallization strips partially overlap and extend between adjacent rows and columns, respectively, of the core cells for providing supply voltages thereto. Further metallization strips for conducting signals overlie the internal portion of the core cell and extend the entire length of the row or column of core cells.

Abstract: In an automatic transmission system in which a gear transmission and a clutch are electronically controlled so as to shift the transmission to the optimum gear position, the system comprises a first generator for generating a set of initial map data corresponding to the position of a selector, the initial map data being for determining an initial target gear position to which the gear should be initially shifted after the position of the selector is changed, and a second generator for generating a set of normal map data corresponding to the position of the selector, the normal map data being for determining a normal target gear position to which the gear should be shifted after the gear is shifted to the determined initial target position. One of the outputs of the first and second generators is selected and applied to a calculator in which the target gear position is calculated in accordance with the selected map data. The gear transmission is automatically shifted to the calculated gear position.

Abstract: In the monolithic integration of HFET and DOES devices, a wide band gap carrier confining semiconductor layer is provided only at predetermined locations where DOES devices are desired. This layer is not provided at other predetermined locations where HFET devices are desired as it would constitute a shunt path which would degrade the high frequency operation of the HFET devices. The invention is particularly useful where monolithic integration of optical sources, optical detectors, and electronic amplifying or switching elements is desired.

Abstract: A portable ticket issuing system comprises a portable electric ticket issuing machine including a keyboard and electric power means for supplying power to the ticket issuing machine, in which the power means comprises a battery unit having a battery casing separate from the ticket issuing machine casing, and including a flexible cable means for electrically connecting the battery and ticket issuing machine, and including a belt support means for mounting the battery and its casing on an operator away from his front and without the operator holding it manually and further support means for mounting the ticket issuing machine on the operator away from his front in a non-operating position where it is located at the operator's side resting on his thigh and so that it allows the ticket issuing machine to be readily moved to an operating position in front of the operator without moving the battery unit and preferably without detaching it from the belt.

Abstract: A portable, three layered laptop computer assembly includes a keyboard member pivotably attached to an output member and provided with an intermediate display member. Upon opening the three members from a closed position with the members forming a regular cubic configuration, the keyboard and output members will be disposed with their bottom surfaces co-planar while the display member attached to the mount member is automatically positioned in a substantially vertical manner.