Abstract: A method of inferring a value for at least one local uniformity metric relating to a product structure, the method including: obtaining intensity data including an intensity image relating to at least one diffraction order obtained from a measurement on a target; obtaining at least one intensity distribution from the intensity image; determining, from the at least one intensity distribution, an intensity indicator expressing a variation of either intensity over the at least one diffraction order, or a difference in intensity between two complimentary diffraction orders over the intensity image; and inferring the value for the at least one local uniformity metric from the intensity indicator.

Abstract: A system, device, and method for imparting or transferring a geometric pattern on the surface of a substrate. The device comprises, a housing forming at least a partially enclosed space, a light source body comprising an array of light emitters, a base disposed below the light source body and configured for supporting the substrate having a photoresist layer thereon, and a controller for activating a predetermined number of individual light emitters corresponding to the predetermined geometric pattern. Each individual light emitter within the array of light emitters is selectively activatable to emit a light. The array of light emitters comprises a plurality of light-emitting diodes, a plurality of quantum dots, or both.

Abstract: An optical element reflects radiation, such as EUV radiation. The optical element includes a substrate with a surface to which a reflective coating is applied. The substrate has at least one channel through which a coolant can flow. The substrate is formed from fused silica, such as titanium-doped fused silica, or a glass ceramic. The channel has a length of at least 10 cm below the surface to which the reflective coating is applied. The cross-sectional area of the channel varies by no more than +/?20% over the length of the channel.

Abstract: A method for providing a wear-resistant material on a body. A composite body that may be obtained by the method. The composite body may be a substrate holder or a reticle clamp for use in a lithographic apparatus. The method includes providing a body made of glass, ceramic or glass-ceramic; providing a wear-resistant material having a hardness of more than 20 GPa; and brazing or laser welding the wear-resistant material to the body.

Abstract: A fluid handling structure for a lithographic apparatus, the structure having: an aperture for the passage therethrough of a beam; a first part; and a second part, wherein the first and/or second part define a surface for the extraction of immersion fluid, relative movement between the first and second parts is effective to change a position of fluid flow into or out of the surface relative to the aperture, and the first or second part has at least one through-hole for the fluid flow and the other of the first or second part has at least one opening for the fluid flow, the at least one through-hole and at least one opening being in fluid communication when aligned, the relative movement allowing alignment of the at least one opening with different ones of the through-hole to change the position of the fluid flow into or out of the surface.

Abstract: A passive flow induced vibration reduction system for use in a temperature conditioning system that controls the temperature of at least one component within a lithographic apparatus. This FIV reduction system includes: a conduit that provides a flow path for a liquid through the system; a liquid filled cavity in fluid connection with the conduit, wherein the fluid connection is provided via one or more openings in the wall of the conduit; a membrane configured such that it separates the liquid in the liquid filled cavity from a gas at a substantially ambient pressure and the membrane is configured such that compliance of the membrane reduces at least low frequency flow induced vibrations in the liquid flowing through the conduit; and an end-stop located on the gas side of the membrane, wherein the end-stop is configured to limit an extent of deflection of the membrane.

Abstract: An EUV lighting device for metrology and inspection of an EUV mask in an EUV exposure process of a semiconductor device manufacturing process includes: an EUV light source for outputting EUV light with a wavelength ranging from 5 nm to 15 nm; and a multilayer reflection zone plate having an EUV reflection multilayer film, which is a planar substrate, and a zone plate pattern. The EUV lighting device radiates EUV light output from the EUV light source to the multilayer reflection zone plate, acquires 1st diffraction light reflected, and creates EUV illumination light.

Abstract: Methods for patterning a substrate are described. A substrate is scanned using a spatial light modulator with a plurality of exposures timed according to a non-crystalline shot pattern. Lithography systems for performing the substrate patterning method and non-transitory computer-readable medium for executing the patterning method are also described.

Abstract: In a control method for overlay accuracy, whether a similar layer of a present layer exists is determined first, where both the present layer and the similar layer are aligned relative to a same reference layer, and overlay accuracy requirements of both the present layer and the similar layer are relative to the reference layer; if so, an overlay error compensation value of a present batch of wafers at the present layer is determined according to an overlay error value of the present batch of wafers at the similar layer and/or an overlay error value of a previous batch of wafers at the similar layer; and a photoetching process is performed on the present layer of the present batch of wafers by means of the overlay error compensation value of the present batch of wafers at the present layer.

Abstract: A method and associated apparatuses for controlling a process of manufacturing semiconductor devices on a substrate. The method includes obtaining process data relating to the process and determining a correction for the process based on the process data and a first control objective associated with the devices on the substrate. A first probability of the first control objective being achievable is determined and the correction adjusted based on the probability and at least a second control objective having a second probability of being achievable compared to the first control objective.

Abstract: A metrology system serves for examining objects with EUV measurement light. An illumination optical unit serves for guiding the EUV measurement light towards the object to be examined. The illumination optical unit has an illumination optical unit stop for prescribing a measurement light intensity distribution in an illumination pupil in a pupil plane of the illumination optical unit. An output coupling mirror serves for coupling a part of the measurement light out of an illumination beam path of the illumination optical unit. The output coupling mirror has a mirror surface which is used to couple out measurement light and has an aspect ratio of a greatest mirror surface extent A longitudinally with respect to a mirror surface longitudinal dimension (x) to a smallest mirror surface extent B longitudinally with respect to a mirror surface transverse dimension (y) perpendicular to the mirror surface longitudinal dimension (x). The aspect ratio A/B is greater than 1.1.

Abstract: In a method of pattern formation information including a pattern size on a reticle is received. A width of an EUV radiation beam is adjusted in accordance with the information. The EUV radiation beam is scanned on the reticle. A photo resist layer is exposed with a reflected EUV radiation beam from the reticle. An increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width is greater when the width before adjustment is W1 compared to an increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width when the width before adjustment is W2 when W1>W2.

Abstract: A resist pattern formation method includes: forming on a substrate a resist layer containing a base resin, a sensitizer precursor, an acid generator, a base generator, and a base; generating a sensitizer from the sensitizer precursor; generating an acid from the acid generator and a base from the base generator; performing heat treatment on the resist layer after flood exposure; and developing the resist layer after the heat treatment. A ratio (C1=A1/B1) of a value (A1) representing an acid in pattern exposure to a value (B1) representing a base in the pattern exposure satisfies a relationship 0.9×C1<C2<10×C1 relative to a ratio (C2=A2/B2) of a value (A2) representing an acid in flood exposure to a value (B2) representing a base in the flood exposure.

Abstract: A facet mirror for an illumination optical unit of a projection exposure apparatus has a large number of displaceable individual facets with a facet main body and a reflection surface arranged on it. At least some of the individual facets have a displacement range such that they come into contact with a stop surface in one or more displacement positions.

Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

Abstract: An immersion lithography apparatus controller configured to control a positioner to move a support table to follow an exposure route and to control a liquid confinement structure, the controller configured to: predict whether liquid will be lost from an immersion space during at least one motion of the route in which an edge of the object passes under an edge of the immersion space, and if liquid loss from the immersion space is predicted, modify the fluid flow such that a first fluid flow rate into or out of an opening at a leading edge of the liquid confinement structure is different to a second fluid flow rate into or out of an opening at a trailing edge of the liquid confinement structure during the motion of predicted liquid loss or a motion of the route subsequent to the motion of predicted liquid loss.

Abstract: A method of determining an overlay value of a substrate, the method including: obtaining temperature data that includes data on measured temperature at one or more positions on a substrate table after a substrate has been loaded onto the substrate table; and determining an overlay value of the substrate in dependence on the obtained temperature data. There is further disclosed a method of determining a performance of a clamping by a substrate table using a determined overlay value.

Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.

Abstract: A method for controlling a process of manufacturing semiconductor devices, the method including: obtaining a first control grid associated with a first lithographic apparatus used for a first patterning process for patterning a first substrate; obtaining a second control grid associated with a second lithographic apparatus used for a second patterning process for patterning a second substrate; based on the first control grid and second control grid, determining a common control grid definition for a bonding step for bonding the first substrate and second substrate to obtain a bonded substrate; obtaining bonded substrate metrology data including data relating to metrology performed on the bonded substrate; and determining a correction for performance of the bonding step based on the bonded substrate metrology data, the determining a correction including determining a co-optimized correction for the bonding step and for the first patterning process and/or second patterning process.

Abstract: A device for producing a master diffraction grating includes a light source unit and a reflecting member 11. The light source unit forms a first interference fringe by irradiating a substrate surface of a master substrate 101 with light. The reflecting member 11 reflects the light from the light source unit reflected on the substrate surface of the master substrate 101 and guides the light again to the substrate surface side to form a second interference fringe. A resist pattern based on the first interference fringe and the second interference fringe is formed on the substrate surface of the master substrate 101.