Abstract: A quartz crystal resonator includes a quartz crystal resonator element, a thermistor, and a package base having a first principal surface and a second principal surface having an opposed surface relationship with each other, the quartz crystal resonator element is mounted on the first principal surface side, the thermistor is housed in a recessed section of the second principal surface side of the package base, a plurality of electrode terminals connected to the quartz crystal resonator element or the thermistor is disposed on the second principal surface side of the package base, and a distance in a first direction perpendicular to the first principal surface from a mounting surface of the electrode terminals to the thermistor is equal to or longer than 0.05 mm.

Abstract: A hybrid structure for a surface acoustic wave device comprises a working layer of piezoelectric material assembled with a support substrate having a lower coefficient of thermal expansion than that of the working layer, and an intermediate layer located between the working layer and the support substrate. The intermediate layer is a sintered composite layer formed from powders of at least a first material and a second material different from the first.

Abstract: A method for manufacturing a PMUT device including a piezoelectric element located at a membrane element is provided. The method includes receiving a silicon on insulator substrate having a first silicon layer, an oxide layer, and a second silicon layer. Portions of a first surface of the second silicon layer are exposed by removing exposed side portions of the first silicon layer and corresponding portions of the oxide layer, and a central portion including the remaining portions of the first silicon layer and of the oxide layer is defined. Anchor portions for the membrane element are formed at the exposed portions of the first surface of the second silicon layer. The piezoelectric element is formed above the central portion, and the membrane element is defined by selectively removing the second layer and removing the remaining portion of the oxide from under the remaining portion of the first silicon layer.

Abstract: The present invention provides a flexible piezoelectric composite including a three-dimensional interconnected piezoelectric ceramic framework based on a porous organic template with sufficient stiffness and infiltrated with a flexible polymer matrix. A method for fabricating the flexible piezoelectric composition is also described herein.

Abstract: There are provided a piezoelectric body of ytterbium-doped aluminum nitride, having a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium, and a MEMS device using the piezoelectric body. The piezoelectric body is represented by a chemical formula Al1-xYbxN where a value of x is more than 0 and less than 0.37 and having a lattice constant ratio c/a in a range of 1.53 or more and less than 1.6. The piezoelectric body with such a configuration has a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium.

Abstract: For direct chip-on-array for a multi-dimensional transducer array, the generally rigid and conductive dematching layer is extended beyond a footprint of the transducer array. The ASIC is directly connected to the dematching layer on one side, while the other side provides for electrical connection to the elements of the array and I/O pads for connections (e.g., flex-to-dematching layer) to the ultrasound imaging system. By using the dematching layer rigidity, the ASIC may be protected during formation of the acoustic stack. By using the dematching layer conductivity, any mis-alignment is compensated by the routing through the dematching layer, and/or a large flat region is provided for I/O, allowing for good low temperature asperity contact connections with larger area than flip-chip solder bumps. By providing the I/O for the system connections on a different side of the dematching layer than the ASIC, a large keep-out distance due to underfill may be avoided.

Abstract: A composite substrate is a plate-shaped body where a first substrate and a second substrate overlap. The composite substrate includes a hole in the first substrate and the second substrate in a thickness direction of the plate-shaped body. A ratio A/B of an average thickness A of the first substrate to an average thickness B of the second substrate is ? or less. An interface between the first substrate and the second substrate on an inner wall of the plate-shaped body that is positioned at the hole includes a part that is covered by a covering layer that contains a component that composes the second substrate.

Abstract: A piezoelectric sensor is provided. The piezoelectric sensor comprises a first base, a first conductive layer adjacent to the first base, a second base, a second conductive layer adjacent to the second base; and a first structure between the first conductive layer and the second conductive layer. The first structure comprises a first layer with a first carbon-based material and a plurality of second structures with piezoelectricity. Each of the plurality of second structures comprises a second layer with a second carbon-based material and a third layer adjacent to the second layer. The third layer comprises a material of two-dimensional crystals of unconventional stoichiometries such as Na2Cl crystals.

Abstract: A system for passive damping of mechanical vibrations generated by a vibrating structure supported by a support, including a transducer interposed between the vibrating structure and the support to transform mechanical energy of vibrations into electrical energy.

Abstract: A resonator includes: interdigital transducer (IDT) including first electrode including first base on piezoelectric substrate and extended in reference direction, and first protrusions connected to the first base and extended in direction intersecting with the reference direction, and second electrode including second base on the piezoelectric substrate and extended in the reference direction, and second protrusions connected to the second base and extended in direction intersecting with the reference direction, each of the second protrusions extended to have one of the first protrusions inserted between the second protrusion and another second protrusion adjacent to the second protrusion, wherein a width of each of first specific protrusions included between one end of the IDT and first position at first distance from the one end, among the first protrusions and the second protrusions, decreases from first specific protrusion closest to the first position toward first specific protrusion closest to the one e

Abstract: An acoustoelectric amplifier and a number of corresponding devices are disclosed, along with methods for making the same. The acoustoelectric amplifier employs wafer-scale bonding to heterogeneously integrate an epitaxial III-V semiconductor stack and a piezoelectric layer. To increase the acoustic gain with low power dissipation, the electromechanical coupling coefficient (k2) of the piezoelectric layer should be high to increase the acoustoelectric interaction strength. The semiconductor mobility should be high to reduce the voltage required to increase the carrier drift velocity. The conductivity-thickness product should be low to prevent screening of the acoustoelectric interaction. The acoustoelectric amplifier or its corresponding material structure may be used to form circulators, isolators, oscillators, mixers, and correlators, while interconnecting waveguides may be formed of the piezoelectric layer or the semiconductor stack.

Abstract: Examples are disclosed herein that relate to driving a resonant scanning mirror system using a linear LC resonant driving scheme. In one example, a resonant scanning mirror system includes a scanning mirror, first and second mirror drive elements, and a drive circuit to drive the scanning mirror at a resonant frequency. The drive circuit includes one or more signal sources configured to create a first source signal and a second source signal that is 180 degrees out of phase with the first source signal. The drive circuit further includes a buffer stage configured to receive the first and second source signals and output first and second drive signals, a first resonant LC stage configured to amplify the first drive signal for provision to the first mirror drive element, and a second resonant LC stage configured to amplify the second drive signal for provision to the second mirror drive element.

Abstract: Even with the occurrence of misalignment of inner electrodes in a ceramic collective board, a multilayer electronic component is made in which inner electrodes are disposed at suitable positions. Disclosed herein are descriptions of a first-stage ceramic collective board and a second-stage ceramic collective board used for manufacturing a multilayer electronic component. The present disclosure further describes a manufacturing method for the second-stage ceramic collective board and a manufacturing method for a multilayer electronic component.

Abstract: An elastic wave device includes an interdigital transducer electrode, a dielectric film, and a frequency adjustment film are disposed on a LiNbO3 substrate. When Euler Angles of the LiNbO3 substrate are within a range of about 0°±5°, within a range of about ?±1.5°, within a range of about 0°±10°, the interdigital transducer electrode includes a main electrode, a film thickness of the main electrode normalized by a wavelength determined in accordance with an electrode finger pitch of the interdigital transducer electrode is denoted as T, and a density ratio of a material of the main electrode to Pt is denoted as r, the film thickness of the main electrode and ? of the Euler Angles satisfy ?=?0.05°/(T/r?0.04)+31.35°.

Abstract: A bonded body has a supporting substrate composed of silicon, piezoelectric material substrate, and a bonding layer provided on a bonding surface of the supporting substrate and composed of a metal oxide. An amount of aluminum atoms on the bonding surface of the supporting substrate is 1.0×1011 to 1.0×1015 atoms/cm2.

Abstract: A method of operating a vibrational energy harvesting system includes providing an energy harvester and an energy storage module. The energy storage module is coupled to the energy harvester to transfer energy to the energy storage module. The method also includes determining whether the energy transferred exceeds a predetermined threshold. The method further includes limiting the energy transferred to the energy storage module by a passive device when the energy transferred exceeds the predetermined threshold.

Abstract: The present disclosure relates to circuitry for driving a piezoelectric transducer. The circuitry comprises pre-processor circuitry configured to process an input signal to generate a processed signal; driver circuitry coupled to the pre-processor circuitry and configured to generate a drive signal, based on the processed signal, for driving the piezoelectric transducer; and processor circuitry configured to determine a resonant frequency of the piezoelectric transducer. The pre-processor circuitry is configured to process the input signal based on the determined resonant frequency so as to generate the processed signal.

Abstract: A vibration structure that includes a piezoelectric film constructed to deform in a plane direction as a voltage is applied thereto, a frame-shaped member, a vibration portion surrounded by the frame-shaped member in a plan view of the vibration structure, a support portion connecting the vibration portion and the frame-shaped member, and supporting the vibration portion within the frame-shaped member such that the vibration portion vibrates in the plane direction when the piezoelectric film is deformed in the plane direction, a first connection member that connects the piezoelectric film to the vibration portion, and a second connection member that connects the piezoelectric film to the frame-shaped member. Of the connection members, the first connection member is disposed between the center of gravity of the vibration portion and the second connection member.

Abstract: A mounting structure includes: a first substrate that has a first surface on which a functional element is provided; a wiring portion that is provided at a position, which is different from a position of the functional element on the first surface, and is conductively connected to the functional element; a second substrate that has a second surface that is opposite to the first surface; and a conduction portion that is provided on the second surface, is connected to the wiring portion, and is conductively connected the functional element. The shortest distance between the functional element and the second substrate is longer than the longest distance between the second substrate and a position where the wiring portion is connected to the conduction portion.

Abstract: A piezoelectric device includes a piezoelectric array, a resin portion, a first electrode, and a second electrode. The piezoelectric array includes piezoelectric pillars having a columnar shape and made of piezoelectric ceramic. The piezoelectric pillars are provided along a row direction and a column direction in a two-dimensional array such that the piezoelectric pillars are parallel or substantially parallel to each other in height direction thereof. The resin portion is located in and preferably fills a gap between the piezoelectric pillars. The first electrode includes first electrode wires extending in the column direction. The second electrode includes second electrode wires extending in the row direction. Both of the piezoelectric pillars and the resin portion resonantly vibrate in a thickness longitudinal vibration mode, and a resonant frequency of the resin portion is higher than a resonant frequency of the piezoelectric pillars by about 15% or greater.