Abstract: A display device, a method for producing a display device, and a gesture recognition method are disclosed. The display device includes a display module including a base and an array substrate, a resin layer, a first electrode layer, a pixel definition layer, a light-emitting unit layer, a second electrode layer disposed opposite to the first electrode layer, and an encapsulation layer. The light-emitting unit layer is between the first electrode layer and the second electrode layer and includes a plurality of light-emitting units respectively in a plurality of openings of the pixel definition layer, and an ultrasonic sensor including the second electrode layer, a piezoelectric material layer between the first electrode layer and the pixel definition layer, and a third electrode layer between the pixel definition layer and the resin layer. The piezoelectric material layer includes a plurality of piezoelectric material units separated by the plurality of light-emitting units.

Abstract: An acoustic wave device includes a first substrate having first and second surfaces opposite from each other, and side surfaces connecting the first and second surfaces, a first acoustic wave element disposed on the first surface of the first substrate, a second substrate that is provided over the first surface of the first substrate and over the first acoustic wave element and has a first air gap between the second and first substrates, a second acoustic wave element disposed on the second substrate, a ground terminal disposed on the second surface of the first substrate, a first metal layer provided between the first and second acoustic wave elements and located in the first air gap, and a second metal layer that covers half or more of a total area of the side surfaces of the first substrate and electrically connects the first metal layer and the ground terminal.

Abstract: Devices and methods are provided for harvesting kinetic energy. The devices can include a plurality of dielectric elastomeric membranes, a rigid connector rod, and a mountable support base. Membrane layers have a funnel-shape with a narrow opening portion and a wide perimeter portion. Membrane layers are adjacent to other membrane layers having an opposite orientation defined by the narrow opening portion and the wide perimeter portion. The narrow opening portions are coupled to a first end portion of the connector rod. The wide perimeter portions are fixed in relation to the support base. Application of linear force at a second end portion of the connector rod in a first direction causes at least a first membrane layer to stretch. Application of the force in a second direction opposite to the first direction causes at least a second membrane layer adjacent to the first membrane layer to stretch.

Abstract: Aspects of this disclosure relate to a bulk acoustic wave device with a multi-gradient raised frame. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a multi-gradient raised frame structure configured to cause lateral energy leakage from a main acoustically active region of the bulk acoustic wave device to be reduced. The multi-gradient raised frame structure is tapered on opposing sides.

Abstract: A quartz crystal resonator includes a quartz crystal resonator element, a thermistor, and a package base having a first principal surface and a second principal surface having an opposed surface relationship with each other, the quartz crystal resonator element is mounted on the first principal surface side, the thermistor is housed in a recessed section of the second principal surface side of the package base, a plurality of electrode terminals connected to the quartz crystal resonator element or the thermistor is disposed on the second principal surface side of the package base, and a distance in a first direction perpendicular to the first principal surface from a mounting surface of the electrode terminals to the thermistor is equal to or longer than 0.05 mm.

Abstract: A surface acoustic wave resonator device, manufacturing method therefor and filter, the surface acoustic wave resonator device includes: an interdigital transducer, located on a piezoelectric substrate and including first and second interdigital electrode lead-out parts, and first and second interdigital electrodes extending along a first direction and alternately arranged along a second direction, the first interdigital electrode is connected to the first interdigital electrode lead-out part, and the second interdigital electrode is connected to the second interdigital electrode lead-out part; and a clutter suppression structure, including a body structure and a sawtooth structure, wherein the body structure continuously extends along the second direction and overlaps with the interdigital electrodes in a third direction, and the sawtooth structure is disposed at a side of the body structure in the first direction, and at least a portion of the sawtooth structure overlaps with the interdigital electrodes in

Abstract: Apparatus and associated methods relate to forming an epitaxial layer of aluminum on an aluminum-nitride compound. The aluminum is epitaxially grown on the crystalline aluminum-nitride compound by maintaining temperature of a crystalline aluminum-nitride compound below a cluster-favoring temperature threshold within a vacuum chamber. Then, the crystalline aluminum-nitride compound is exposed to atoms of elemental aluminum for a predetermined time duration. The aluminum is epitaxially grown in this fashion for a predetermined time duration so as to produce a layer of epitaxial aluminum of a predetermined thickness. Such epitaxially-grown mono-crystalline aluminum has a lower resistivity than poly-crystalline aluminum.

Abstract: The acoustic wave device includes a crystal substrate cut from a quartz crystal boule cut by a rotational angle specified by a right-handed Euler angle (?, ?, ?), and at least one comb-shape excitation electrode to excite the crystal substrate to make a plate waves. The rotational angle specified by the right-handed Euler angle (?, ?, ?) is within ranges of ?=0±2°, ?=16.0° to 20.0°, and ?=0±2°. A plate wave, among the plate waves, having a phase velocity in a range of from 3500-4000 m/s, is selected as a vibration mode of the crystal substrate. When H represents a substrate-thickness of the crystal substrate and ? represents a wavelength of the plate wave, a normalized plate thickness H/? is in a range of 1.5<H/?<2.0.

Abstract: An acoustic wave device includes a support substrate, a piezoelectric body including LiTaO3, a first electrode on a first main surface of the piezoelectric body, a second electrode on a second main surface, an acoustic-layer laminated body between a support substrate and the piezoelectric body. The azimuth angle of the piezoelectric body is (about 85° to 95°, about 85° to 95°, about 5° to 65°) represented in Euler angles.

Abstract: Disclosed herein are ultrasonic transducer systems with hybrid contacts comprising: an ultrasonic transducer element comprising a substrate and a membrane; an electrical circuitry; and one or more contacts connected to the ultrasonic transducer element and the electrical circuitry, wherein the one or more contacts are: designed geometrically using a set of rules; arranged with respect to the membrane based on the set of rules or a second set of rules, or both.

Abstract: A surface acoustic wave tag device is disclosed, comprising: an acoustic wave propagating substrate, at least one transducer structure comprising inter-digitated comb electrodes, and at least one reflecting means, the reflecting means comprising at least one reflector, wherein the acoustic wave propagation substrate is a composite substrate comprising a base substrate and a piezoelectric layer, wherein the crystallographic orientation of the piezoelectric layer with respect to the base substrate is such that the propagation of a shear wave inside the piezoelectric layer and in the direction of propagation corresponding to the acoustic wave is enabled. A physical quantity determining device and a fabrication method of such surface acoustic wave tag device are also disclosed.

Abstract: A motor has a housing which comprises a cavity and a socket accessible from outside the housing. The socket has an interior surface. The motor includes a LRU sensor system which comprises an LRU sensor having electrical conductors and internal sensor wiring that is electrically connected to the electrical conductors and electrical conductors on the interior surface of the socket, wherein when the LRU sensor is positioned in the socket, the electrical conductors on the LRU sensor contact the electrical conductors on the interior surface of the socket.

Abstract: A resonance device is provided that includes a resonator having a base, a vibrating arm extending from one end of the base along a first direction, a frame disposed around at least a part of the vibrating arm and holding the vibrating arm such that the vibrating arm is configured to vibrate, and a support arm connecting the base to the frame. Moreover, a first substrate is provided that includes a first recess forming at least a part of a vibration space for the resonator and a first limiting portion provided away from the support arm by a first distance in a thickness direction, in which the first distance is smaller than a distance between a bottom surface of the first recess and the vibrating arm in the thickness direction of the first substrate.

Abstract: A piezoelectric device includes a base portion and an upper layer on an upper side of and supported by the base portion. The upper layer includes a membrane portion that does not overlap with the base portion in plan view. The membrane portion includes at least one piezoelectric layer sandwiched by electrode layers from a top and a bottom thereof. An intermediate layer is between a lower electrode and the base portion. The intermediate layer includes one or more individual layers, and an individual layer exposed as a lower surface of the membrane portion among the one or more individual layers includes a bent portion, which extends from the lower surface of the membrane portion to a lateral wall, on a boundary between a portion defining and functioning as the lower surface of the membrane portion and a portion overlapping with the base portion.

Abstract: A force sensing device is mounted on a tool to sense force, particularly quasi-static and static forces. The force sensing device includes at least one a sensor. A piezoelectric element in the sensor includes a driving portion and a sensing portion. A first voltage is input to the driving portion to generate a vibration in the piezoelectric element and a second voltage in response to the vibration is output from the sensing portion. The second voltage output from the sensing portion is changed as the vibration in the piezoelectric element is suppressed by an external force acting on the force sensing device so variation of the second voltage can be used to measure the external force.

Abstract: An acoustic wave device includes a piezoelectric substrate and an interdigital transducer disposed on the piezoelectric substrate, the interdigital transducer including a center region, first and second edge regions, and first and second gap regions, a temperature compensation layer covering the interdigital transducer, and a floating metal layer buried in the temperature compensation layer or disposed on top of the temperature compensation layer. The floating metal layer includes a plurality of floating metal blocks spaced apart from each other and overlapping at least the first and second edge regions of the interdigital transducer.

Abstract: In accordance with an embodiment, a method of operating a piezoelectric transducer configured to transduce mechanical vibrations into transduced electrical signals at a pair of sensor electrodes includes stimulating a resonant oscillation of the piezoelectric transducer by applying at least one pulse electrical stimulation signal to the pair of sensor electrodes; detecting, at the pair of sensor electrodes, at least one electrical signal resulting from the stimulated resonant oscillation, wherein the at least one electrical signal resulting from the stimulated resonant oscillation oscillates at a resonance frequency of the piezoelectric transducer; measuring a frequency of oscillation of the at least one electrical signal resulting from the stimulated resonant oscillation to obtain a measured resonance frequency of the piezoelectric transducer; and tuning a stopband frequency of a notch filter coupled to the piezoelectric transducer to match the measured resonance frequency of the piezoelectric transducer.

Abstract: The harvester comprises a pendular unit comprising a beam that is elastically deformable in bending, a mount clamping a proximal end of the beam, and an inertial mass mounted at a free, distal end of the beam. The beam converts into an oscillating electric signal a mechanical energy produced by pendular unit oscillations. The beam comprises a flexible structure including a central core, a piezoelectric layer on at least one face of the central core, and at least one surface electrode on an external face of the piezoelectric layer. The central core of the flexible structure is made of a semiconductor material adapted to form an integrated circuit substrate. The substrate made of a semiconductor material of the central core includes monolithic integrated structures, and the arrangement, over the extend of the central core substrate, of said integrated structures forms in the longitudinal direction a plurality of successive areas having different bending stiffness coefficients from an area to another.

Abstract: In at least one embodiment, the SAW device comprises a carrier substrate (1), a piezoelectric thin-film (2) on the carrier substrate, an interdigital electrode structure (3) on the piezoelectric thin-film and a layer stack (4) of waveguide layers. The layer stack is arranged between the carrier substrate and the piezoelectric thin-film. The layer stack comprises a first waveguide layer (41) and second waveguide layer (42), wherein a sound velocity in the first waveguide layer is at least 1.5 times as great as in the second waveguide layer. The device may comprise a temperature compensating layer (5) and a trap rich layer (6) between the layer stack and the carrier substrate.

Abstract: A vibration device includes a light-transmissive cover, a piezoelectric element to vibrate the light-transmissive cover, at least one vibration body connected to the piezoelectric element, at least one power feed conductor in contact with the piezoelectric element and feeding power to the piezoelectric element, and at least one elastic portion to press the at least one power feed conductor against the piezoelectric element.