Abstract: Methods, systems and devices are disclosed for controlling self-induced acoustic interference. In one embodiment, a first piezoelectric transducer to which a first excitation signal is applied, generates back side acoustic waves that are transmitted from a back side of the first piezoelectric transducer into a backing material layer. A second piezoelectric transducer coupled to a back side of the backing material layer generates a first calibration response to the back side acoustic waves. An interference signal profile is generated based, at least in part, on the first calibration response and may be used to filter interference signal components and/or to generate a control signal to be applied to the second piezoelectric transducer during measurement cycles.

Abstract: A PMUT includes a substrate, a membrane, and a sacrificial layer. The substrate has a cavity penetrating the substrate. The membrane is disposed over the cavity and includes a first piezoelectric layer, a bottom electrode, a top electrode, and a second piezoelectric layer. The first piezoelectric layer is disposed over the cavity and includes an anchor portion, where the anchor portion of the first piezoelectric layer is in direct contact with the substrate. The top and bottom electrodes are disposed over the first piezoelectric layer. The second piezoelectric layer is disposed between the bottom electrode and the top electrode. The sacrificial layer is disposed between the substrate and the first piezoelectric layer, and a vertical projection of the sacrificial layer does not overlap a vertical projection of portions of the membrane disposed over the cavity.

Abstract: An elastic wave device using the S0 mode of plate waves includes a support substrate, an acoustic reflective layer laminated on the support substrate, a piezoelectric body laminated on the acoustic reflective layer, and an IDT electrode disposed on the piezoelectric body. In the acoustic reflective layer, T1+T2 is between about 0.40 and about 0.60 inclusive in a portion in which low and high acoustic impedance layers are adjacent in the laminating direction. T1 is the thickness of the low acoustic impedance layers. T2 is the thickness of the high acoustic impedance layers. T1/(T1+T2) is between about 0.35 and about 0.65 inclusive.

Abstract: It is an object of the present invention to array and utilize piezoelectric generators. It is also an object of the invention to implement properly configured piezoelectric generators into applications that can recapture expelled kinetic energy that is otherwise wasted. Particularly, piezoelectric generators, or arrays, may be, for example, placed in shoes, clothing, tires, roads, and sidewalks in order to recapture the energy expelled in everyday human activities (e.g., walking, moving, and driving).

Abstract: A method of manufacturing a power generation element includes a first step of disposing a support unit that supports a vibration unit in one end portion of the vibration unit in one direction, and disposing a weight unit in the other end portion of the vibration unit in the one direction in a substrate including the vibration unit capable of vibrating, a second step of disposing a piezoelectric unit that generates power due to vibration in a portion of the vibration unit on an opposite side from the support unit side in a thickness direction of the substrate after the support unit and the weight unit are disposed in the vibration unit, and a third step of extracting a power generation element from the substrate by cutting an outer edge of the vibration unit in the thickness direction of the substrate after the piezoelectric unit is disposed in the vibration unit.

Abstract: A guided surface acoustic wave (SAW) device includes a substrate, a piezoelectric layer on the substrate, and a transducer on the piezoelectric layer. The substrate is silicon, and has a crystalline orientation defined by a first Euler angle (?), a second Euler angle (?), and a third Euler angle (?). The first Euler angle (?), the second Euler angle (?), and the third Euler angle (?) are chosen such that a velocity of wave propagation within the substrate is less than 6,000 m/s.

Abstract: Guided Surface Acoustic Wave (SAW) devices with improved quartz orientations are disclosed. A guided SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate. The quartz carrier substrate includes an orientation that provides improved performance parameters for the SAW device, including electromechanical coupling factor, resonator quality factor, temperature coefficient of frequency, and delta temperature coefficient of frequency.

Abstract: An elastic wave device includes a piezoelectric film laminated on a first main surface of a support substrate including a recessed portion open to a first main surface. A cavity portion including the recessed portion is defined by the support substrate and the piezoelectric film. An electrode is on the piezoelectric film. The electrode includes first and second bus bars, a first electrode finger connected to the first bus bar, and a second electrode finger connected to the second bus bar. The first and second bus bars include corner portions inside the cavity portion when viewed in plan view. A curved portion as a pressure relaxation portion to relax pressure on the piezoelectric film at at least one of the corner portions of the first and second bus bars is provided between the corner portion and an outer edge of the cavity portion.

Abstract: Described are transducer assemblies and imaging devices comprising: a microelectromechanical systems (MEMS) die including a plurality of piezoelectric elements; a complementary metal-oxide-semiconductor (CMOS) die electrically coupled to the MEMS die by a first plurality of bumps and including at least one circuit for controlling the plurality of piezoelectric elements; and a package secured to the CMOS die by an adhesive layer and electrically connected to the CMOS die.

Abstract: The present disclosure relates to circuitry for driving a piezoelectric transducer based on an input signal. The circuitry comprises: primary driver circuitry configured to receive the input signal and to output a primary driving signal to the piezoelectric transducer based on the input signal; and secondary driver circuitry configured to receive an error signal indicative of an error between the input signal and the primary driving signal and to output a secondary driving signal to the piezoelectric transducer based on the error signal, wherein the primary driver circuitry and the secondary driver circuitry both comprise switching converter circuitry.

Abstract: A force-measuring and touch-sensing integrated circuit device includes a semiconductor substrate, a thin-film piezoelectric stack overlying the semiconductor substrate, piezoelectric micromechanical force-measuring elements (PMFEs), and piezoelectric micromechanical ultrasonic transducers (PMUTs). The thin-film piezoelectric stack includes a piezoelectric layer. The PMFEs and PMUTs are located at respective lateral positions along the thin-film piezoelectric stack, such that each of the PMFEs and PMUTs includes a respective portion of the thin-film piezoelectric stack. Each PMUT has a cavity, the respective portion of the thin-film piezoelectric stack, and first and second PMUT electrodes. Each PMFE has the respective portion of the thin-film piezoelectric stack, and first and second PMFE electrodes.

Abstract: An acoustic wave resonator includes a support substrate, a piezoelectric layer that is disposed on the support substrate and is a rotated Y-cut X-propagation lithium tantalate of which a cut angle is within a range of greater than 50° and less than 150°, and a pair of comb-shaped electrodes disposed on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers, an average pitch of the electrode fingers of one of the comb-shaped electrodes being equal to or greater than ½ of a thickness of the piezoelectric layer.

Abstract: A tunable metamaterial structure can have a flexible substrate that is elastically deformable. The tunable metamaterial structure can have a photo-responsive stiffness-modulating patch. The photo-responsive stiffness-modulating patch can be fixed to a surface of the flexible substrate. The photo-responsive stiffness-modulating patch can include a piezoelectric element and a photo-responsive element. The piezoelectric element and the photo-responsive element are electrically connected to one another.

Abstract: An ultrasonic sensor includes a substrate in which an opening is formed; a vibration plate that is provided on the substrate so as to block the opening; and a piezoelectric element including a first electrode, a piezoelectric layer, and a second electrode that are stacked on an opposite side of the opening of the vibration plate, in which when a direction in which the first electrode, the piezoelectric layer, and the second electrode are stacked is a Z direction, and a portion that is completely overlapped by the first electrode, the piezoelectric layer, and the second electrode in the Z direction is an active portion, a plurality of active portions are provided so as to face the each opening, and a columnar member is provided between the adjacent active portions.

Abstract: A fluid actuator includes an actuating portion, a piezoelectric unit, a conduction unit, and a levelness regulating portion. The actuating portion includes a first actuating area, a second actuating area, and at least one connecting section between the two actuating areas. The piezoelectric unit includes a first signal area and a second signal area. The two signal areas are provided in the same plane and are isolated from each other by an isolating portion. The piezoelectric unit corresponds in position to the first actuating area of the actuating portion. The conduction unit includes a first electrode and a second electrode. The first signal area of the piezoelectric unit is electrically connected to the first electrode, and the second signal area of the piezoelectric unit to the second electrode. The levelness regulating portion, the piezoelectric unit, and the conduction unit are located on the same side of the actuating portion.

Abstract: According to one embodiment, a drive circuit includes a first circuit part. The first circuit part includes a first detecting part, a second detecting part, a first circuit, and a second circuit. The first detecting part is configured to detect a first piezoelectric element current flowing in a first piezoelectric element, and output a first detection signal corresponding to the first piezoelectric element current. The second detecting part is configured to detect a first capacitance element current flowing in a first capacitance element, and output a second detection signal corresponding to the first capacitance element current. The first circuit includes a first input terminal and a second input terminal. The first circuit is configured to apply a first drive signal to the first piezoelectric element and the first capacitance element. The second circuit is configured to supply a first differential signal to the second input terminal.

Abstract: A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. An average value of a nitrogen concentration of the silicon oxide layer is higher than a nitrogen concentration at an interface between the silicon oxide layer and supporting substrate and higher than a nitrogen concentration at an interface between the silicon oxide layer and piezoelectric material substrate.

Abstract: A nonlinear magnetic force-based arched piezoelectric ceramic energy harvesting deceleration strip, which comprises an outer case and an internal generating mechanism. The outer case structure comprises an upper deceleration strip and a casing. The casing is embedded in the pavement structure by excavating the upper part of surface course. A rebounding mechanism is located between the upper deceleration strip and casing to restore the pressed upper deceleration strip. Features: the generating mechanism comprises a rack, a gear set and generating discs. The rack is disposed at the bottom of the upper deceleration strip and moving up and down therewith. The rack can drive the gear set to generate acceleration, and the transmission shafts drive the left and right generating discs to rotate. The gear set is combined with three transmission shafts.

Abstract: For direct chip-on-array for a multi-dimensional transducer array, the generally rigid and conductive dematching layer is extended beyond a footprint of the transducer array. The ASIC is directly connected to the dematching layer on one side, while the other side provides for electrical connection to the elements of the array and I/O pads for connections (e.g., flex-to-dematching layer) to the ultrasound imaging system. By using the dematching layer rigidity, the ASIC may be protected during formation of the acoustic stack. By using the dematching layer conductivity, any mis-alignment is compensated by the routing through the dematching layer, and/or a large flat region is provided for I/O, allowing for good low temperature asperity contact connections with larger area than flip-chip solder bumps. By providing the I/O for the system connections on a different side of the dematching layer than the ASIC, a large keep-out distance due to underfill may be avoided.

Abstract: A surface acoustic wave resonator device comprises a substrate supporting: a gateable, electrically conducting layer; an interdigital transducer (IDT); a reflector grating that comprises a plurality of electrically separated fingers; a main ohmic contact; and a gate element. The IDT is configured to be connectable to a ground. The conducting layer is configured to be connectable to the ground via the main ohmic contact, while each of said fingers is electrically connected to a lateral side of the conducting layer. This defines a gateable channel, which extends from the fingers to the ground via the conducting layer and the main ohmic contact. The gate element is electrically insulated from the conducting layer. The gate element is configured to allow an electrical impedance of the gateable channel to be continuously tuned by applying a voltage bias to this gate element with respect to the ground, in operation of the device.