Abstract: A quartz crystal resonator includes a quartz crystal resonator element, a thermistor, and a package base having a first principal surface and a second principal surface having an opposed surface relationship with each other, the quartz crystal resonator element is mounted on the first principal surface side, the thermistor is housed in a recessed section of the second principal surface side of the package base, a plurality of electrode terminals connected to the quartz crystal resonator element or the thermistor is disposed on the second principal surface side of the package base, and a distance in a first direction perpendicular to the first principal surface from a mounting surface of the electrode terminals to the thermistor is equal to or longer than 0.05 mm.

Abstract: A vibrating piezoelectric atomizer comprising: a piezoelectric tube having a length, a first end defining an opening and a second end, the second end of the piezoelectric transducer tubular body is connected to a horn; the horn is dimensioned to be half wavelength resonator; the horn is folded and located alongside the piezoelectric tube; a metallic disk is connected to the horn near the first end of the piezoelectric tube, whereby by applying an alternating voltage across electrodes of the piezoelectric tube, the piezoelectric tube is excited into a resonant vibration when frequency of excitation equals to half wavelength resonant frequency of the piezoelectric tube's length and vibrates in synchronism and is communicated to the metallic disk to atomize a liquid.

Abstract: A contact sensor for the repeatable detection of small, high frequency mechanical vibrations in external systems is presented herein. The sensor includes a metal housing with an attachment device at one end and an output at the other end. Inside the metal housing is a core assembly that includes a piezo transducer assembly suspended or isolated between an actuator and a biasing device. The actuator may be in the form of a ceramic sphere that sits at least partially within a recess on the inside of the housing and is in physical contact with the piezo transducer assembly. The biasing device may be in the form of a spring that causes the piezo transducer assembly to be pressed against the actuator at a contestant and known amount of tension.

Abstract: An elastic wave device includes an interdigital transducer electrode, a dielectric film, and a frequency adjustment film are disposed on a LiNbO3 substrate. When Euler Angles of the LiNbO3 substrate are within a range of about 0°±5°, within a range of about ?±1.5°, within a range of about 0°±10°, the interdigital transducer electrode includes a main electrode, a film thickness of the main electrode normalized by a wavelength determined in accordance with an electrode finger pitch of the interdigital transducer electrode is denoted as T, and a density ratio of a material of the main electrode to Pt is denoted as r, the film thickness of the main electrode and ? of the Euler Angles satisfy ?=?0.05°/(T/r?0.04)+31.35°.

Abstract: This document describes techniques and apparatuses directed at localized haptic feedback in electronic devices using pressure-sensitive adhesive (PSA) and piezoelectric haptic actuators. In aspects, an electronic device includes a housing having a frame defining a slot. An actuator is adhered to the frame at the bottom of the slot by the PSA. When a force is applied to an exterior surface of the actuator (“button press”), the PSA compresses and an extending member attached to the actuator, opposite the exterior surface, slidably moves within an aperture in the frame at the bottom of the slot. The extending member engages a sensor module (e.g., piezoelectric sensor) and the electronic device registers a button press. The sensor module then applies haptic feedback to the extending member and through the actuator to the exterior surface. When the force is removed from the actuator's exterior surface, the PSA expands to an approximate original thickness.

Abstract: Provided is a low frequency vibrating actuator device. The low frequency vibrating actuator device includes a substrate including a pair of connection electrodes, an actuator provided on the pair of connection electrodes to generate vibration, a support provided on the actuator, a vibration membrane provided on the support to vibrate according to the actuator, and a vibrating mass provided on the vibration membrane to vibrate according to the vibration membrane. The actuator includes a plurality of laminated insulating layers and internal electrodes that are alternately laminated between the insulating layers adjacent to each other, and a top surface of the support, which contacts the vibration membrane, has an area that is equal to or less than that of a bottom surface of the support, which contacts the actuator.

Abstract: Disclosed is a vibration actuator device. The vibration actuator device includes a substrate, lower supports disposed on the substrate and spaced apart from each other in a first direction, an actuator disposed on the lower supports to generate a vibration having a first resonant frequency by an external power, a vibration plate disposed on the actuator to vibrate in accordance with the actuator, and a mass portion disposed on the vibration plate to vibrate in accordance with the actuator and the vibration plate. Here, each of the vibration plate and the mass portion has a second resonant frequency that is less than the first resonant frequency.

Abstract: An electric controlled bi-directional bending actuator with deformability and stiffness tunable capacity is disclosed. The electric controlled bi-directional bending actuator with deformability and stiffness tunable capacity comprises three kinds of functional layers that are electro-deformable layers, electro-variable stiffness layers and flexible electrodes. From up to bottom, they are the first flexible electrodes layer, the first electro-deformable layer, the second flexible electrodes layer, the electro-variable stiffness layer, the third flexible electrode layer, the second electro-deformable layer and the fourth flexible electrode layer. The adjacent layers are glued together. The electro-deformable layer is made from dielectric elastomers. The electro-variable stiffness layer is made from electro-rheological materials, including electro-rheological fluids, electro-rheological gels or electro-rheological elastomers.

Abstract: An elastic wave device in which a recess is provided on an upper side of a support, a piezoelectric thin film covers the recess, and an IDT electrode is provided on an upper surface of the piezoelectric thin film. A plate wave of an S0 mode or SH0 mode is used. A plurality of grooves are provided in the upper surface or lower surface of the piezoelectric thin film at a portion of the piezoelectric thin film that is positioned on a hollow section.

Abstract: A vibration device includes a piezoelectric element, a vibration member to which the piezoelectric element is bonded, and a wiring member connected with the piezoelectric element. A method for vibrating the vibration device includes inputting a signal including a fundamental frequency component to the piezoelectric element through the wiring member, and vibrating the vibration device in a vibration mode that includes the fundamental frequency component and does not approximately include a high order frequency component that is n times (n represents an integer of 2 or more) the fundamental frequency component. The fundamental frequency component is lower than the resonance frequency component of the vibration device.

Abstract: An elastic wave device includes a supporting substrate, an acoustic reflection layer on the supporting substrate, a piezoelectric layer on the acoustic reflection layer, and an IDT electrode on the piezoelectric layer. The acoustic reflection layer includes three or more low-acoustic impedance layers and two or more high-acoustic impedance layers. At least one of a first relationship in which in which, a film thickness of a first low-acoustic impedance layer closest to the piezoelectric layer is thinner than a film thickness of a low-acoustic impedance layer closest to the first low-acoustic impedance layer, and a second relationship in which a film thickness of a first high-acoustic impedance layer closest to the piezoelectric layer is thinner than a film thickness of a high-acoustic impedance layer closest to the first high-acoustic impedance layer, is satisfied.

Abstract: A piezoelectric element driving circuit includes a boosting circuit, a driving circuit, a waveform shaping circuit, and a computing circuit. The driving circuit includes a differential amplifier circuit with an LPF, an amplifier circuit with a BPF, an inverter, a resistor, and a comparator. The driving circuit applies a driving signal to a piezoelectric element of a piezoelectric pump. The waveform shaping circuit extracts a voltage signal from the driving circuit. On the basis of the voltage signal, the waveform shaping circuit and the computing circuit determine a voltage value corresponding to driving current flowing through the piezoelectric element. The computing circuit outputs a control signal to the boosting circuit on the basis of the voltage value. The boosting circuit sets the value of a DC supply voltage on the basis of the control signal, and outputs the DC supply voltage.

Abstract: An ultrasonic device according to an aspect of the present disclosure includes a substrate in which an opening section piercing through the substrate in a thickness direction is provided, a vibration plate provided on the substrate to close the opening section, a piezoelectric element provided in a position corresponding to the opening section on a first surface at the opposite side of the substrate side of the vibration plate, and an elastic layer provided in contact with a second surface at the substrate side of the vibration plate at the inner side of the opening section of the substrate. The elastic layer includes a curved surface recessed to the vibration plate side at the opposite side of the vibration plate side.

Abstract: An acoustic wave resonator includes: a support substrate; a piezoelectric substrate located on the support substrate; a first amorphous layer that is in contact with the support substrate and is mainly composed of one or more constituent elements of the support substrate; a second amorphous layer that is in contact with the piezoelectric substrate and the first amorphous layer, is mainly composed of one or more constituent elements of the piezoelectric substrate, and is thinner than the first amorphous layer; and a pair of comb-shaped electrodes that is located on an opposite surface of the piezoelectric substrate from the support substrate, each of the pair of comb-shaped electrodes including electrode fingers.

Abstract: An acoustic transducer, in particular for an ultrasonic sensor, is proposed. The acoustic transducer has a functional group, the functional group encompassing a diaphragm cup and at least one electroacoustic transducer element. The acoustic transducer furthermore has a housing. The diaphragm cup encompasses a vibration-capable diaphragm and an encircling wall, as well as at least one electroacoustic transducer element, the transducer element being embodied to excite the diaphragm to vibrate and/or to convert vibrations of the diaphragm into electrical signals. The diaphragm cup is constituted from a plastic material, the at least one transducer element being integrated into the vibration-capable diaphragm, the transducer element having an electrically active polymer.

Abstract: A piezoelectric element drive circuit includes a piezoelectric element driven at a predetermined frequency and having a resonant frequency of (2n+1) times the predetermined frequency (n is a predetermined natural number), and a drive voltage generator that has a first output terminal connected to a first terminal of the piezoelectric element and a second output terminal connected to a second terminal of the piezoelectric element. When the piezoelectric element is driven, a waveform of potential difference between the first output terminal and the second output terminal is a step wave which transitions while taking an intermediate potential. A time length for which the potential difference is the intermediate potential is around (t2?t1)/(2n+1) in a period of time from time t1 at which the potential difference falls to the intermediate potential to time t2 at which the potential difference falls to the intermediate potential subsequently.

Abstract: A sound transducer, in particular, for an ultrasonic sensor, includes a functional group, the functional group including a diaphragm cup and at least one electroacoustic transducer element. The sound transducer also includes a housing. The diaphragm cup includes a vibratory diaphragm and a circumferential wall, and at least one electroacoustic transducer element, the transducer element being configured to stimulate the diaphragm to vibrate and/or to convert vibrations of the diaphragm into electrical signals. The diaphragm cup is formed from a plastic material, the at least one transducer element being integrated into the vibratory diaphragm, in particular without an additional adhesive layer, the transducer element including a piezoceramic element.

Abstract: A mounting structure includes: a first substrate that has a first surface on which a functional element is provided; a wiring portion that is provided at a position, which is different from a position of the functional element on the first surface, and is conductively connected to the functional element; a second substrate that has a second surface that is opposite to the first surface; and a conduction portion that is provided on the second surface, is connected to the wiring portion, and is conductively connected the functional element. The shortest distance between the functional element and the second substrate is longer than the longest distance between the second substrate and a position where the wiring portion is connected to the conduction portion.

Abstract: Apparatuses and method are described to create an energy harvesting microstructure, referred to herein as a transduction micro-electro mechanical system (T-MEMS). A T-MEMS includes a substrate, a first buckled membrane, the first buckled membrane has a buckling axis and is connected to the substrate. The first buckled membrane further includes a transduction material, a first conductor, the first conductor is applied to a first area of the transduction material; and a second conductor, the second conductor is applied to a second area of the transduction material, wherein electrical charge is harvested from the transduction material when the first buckled membrane is translated along the buckling axis.

Abstract: A piezoelectric film includes a plurality of laminated main baking unit PZT layers. A first seed layer is present at a lower surface side of a lowermost main baking unit PZT layer. A second seed layer is interposed between two adjacent main baking unit PZT layers at an intermediate position between the lowermost main baking unit PZT layer and an uppermost main baking unit PZT layer.