Abstract: A wound thin film capacitor is formed by the method of applying a solution of a metal-organic alkoxide composition to at least one flat surface of an electrically conductive metal strip and heating the coated strip so as to remove the organic component of the metal-organic alkoxide composition and produce a thin, electrically non-conductive metal oxide film on the flat surface. The metal strip with the metal oxide coating is then wound on a spool to form a wound thin film capacitor.

Abstract: A recording apparatus includes an input circuit for inputting recording data, a process circuit for performing a recording operation on a photosensitive body on the basis of the recording data input from the input circuit, a designating circuit for designating a recording density, and a control circuit for controlling an operating condition of at least a high-voltage circuit on the basis of designation by the designating circuit. The process circuit includes the high-voltage circuit used for the recording operation.

Abstract: A decoupling apparatus for a microcircuit provides for a custom capacitor to be placed directly on the passivated upper surface of the integrated circuit or alternatively to be placed directly under the integrated circuit.In another alternative, multiple standard chip capacitors are placed directly on the passivated upper surface and connected by wire bonds to metal bars also resting on the upper surface.

Abstract: A capacitor unit includes a housing having a pair of conventional electrical terminals. Contained within the housing are a pair of capacitors connected in parallel to the two terminals. One of the capacitors is connected to one of the terminals by a relatively thin wire which passes to the terminal through an anchoring location. The wire is connected in such a fashion that rotation of the terminal by a service man will break it. This reduces the capacitance of the unit to that of the remaining capacitor.

Abstract: At least two powders of minute active carbon particles having different diameters are mixed, and the mixture is placed in a mold. While a pressure is being applied to the mixture in the mold, pulse voltages are applied between the minute active carbon particles for producing electric discharges therebetween, and the minute active carbon particles are kept at a predetermined temperature, thereby sintering the minute active carbon particles into a porous sintered body, which is used as an electrode. Two such electrodes are impregnated with an electrolyte, producing polarized electrodes. An electric double layer capacitor comprises the polarized electrodes which are sandwiched between current collectors, and separated by a separator.

Abstract: A technique is disclosed for supplying backup power by providing a solid-state electrochemical capacitor with a layer of solid electrolyte material composed of RbAg.sub.4 I.sub.5, a layer of anode material composed of carbon and RbAg.sub.4 I.sub.5 adjoining a first surface of the electrolyte material, and a layer of cathode material composed of carbon and RbAg.sub.4 I.sub.5 adjoining a second surface of the electrolyte material. A current is supplied to charge the anode of the capacitor structure to a voltage in the range from 0.50 volts to 0.66 volts to cause storage of charge in the capacitor structure in both a double layer capacitance mode and a pseudo capacitance mode. The charged up capacitor is used to supply a backup voltage to a utilization device. In one embodiment, the anode includes a silver disk adjoining the electrolyte layer. In another embodiment, the anode contains platinized activated carbon and RbAg.sub.4 I.sub.5 to reduce silver dendrite growth during chraging.

Abstract: A capacitor of the self-healing type having a metallic coating which is vapor-deposited under vacuum and provided with a plurality of minute apertures therein which are configured as narrow slots rounded at their ends which subdivide the metallic coating into surface elements small in area, and at there ends there are bridges of smaller width which conductingly connect the surface elements.

Abstract: Disclosed is a high-energy-density all-solid ionomer electrochemical capacitor, completely free of liquid electrolyte. The capacitor includes 1) a three-dimensional metal oxide-particulate-ionomer composite electrode structure, whereby the ionomer coats the individual particles and provides a mechanism for continuous proton transport throughout the composite structure and 2) a unitized repeating cell element that includes this three-dimensional composite electrode structure. The composite electrode structures are bonded to opposite sides of a thin sheet of a solid proton-conducting ionomer membrane and form an integrally bonded membrane and electrode assembly (MEA). The composite electrodes of the MEA are pressed against thin electrically conductive current collectors to form a repeating element in a bipolar cell capacitor arrangement. Energy storage and discharge are achieved by utilizing double-layer and reversible redox processes.

Abstract: A pressure ranging from 50 Kgf/cm.sup.2 to 800 Kgf/cm.sup.2 is applied to a pwoder of fine particles of activated carbon, and while the pressure is being applied to the fine particles, pulse voltages are applied between the fine particles for producing electric discharges between the fine particles, and the fine particles are kept at a temperature ranging from 700.degree. C. to 1000.degree. C., thereby sintering the fine particles of activated carbon into an electrode of a porous sintered body. Two such electrodes are impregnated with an electrolyte to produce polarized electrodes, and a separator is sandwiched between the polarized electrodes, thus completing an electric double layer capacitor.

Abstract: A method of manufacturing an improved varistor or capacitor, and the resultant improved varistor or capacitor is described. In accordance with the method the ceramic layers of the varistor are formed by providing at least two strata separated by a boundary layer which resists grain growth thereacross. The ceramic body is sintered under temperature conditions sufficiently low that grain growth within the strata defining the ceramic layers is restricted to the strata such that grain growth across the boundary material is minimized. By this method the ceramic layers have a predictable number of grain boundaries between adjacent electrodes.

Abstract: An integral decoupling capacitor for a multichip module. The capacitor is formed over a support base material which need not be conductive. A first plate is formed by deposition of an anodizable metal. The metal is then anodized to form a dielectric layer. A second layer of metal is then formed over the dielectric layer. The formation of the capacitor over the surface of the wafer allows modules to be inventoried. Direct contact to the metal forming the capacitor plates relieves the support base from any requirement to be conductive.

Abstract: A dynamic random access memory cell in which a silicon-germanium alloy layer having a rough surface morphology is utilized for the capacitive surface of the storage-node plate of the cell capacitor. To create a DRAM array having such cells, a silicon-germanium alloy is deposited, typically via rapid thermal chemical vapor deposition, on top of a single crystalline silicon or polycrystalline silicon storage-node plate layer under conditions which favor three-dimensional growth in the form of macroscopic islanding (i.e., a high concentration of germanium in precursor gases and relatively high deposition temperature). A cell dielectric layer, which exhibits the property of bulk-limited conduction (e.g., silicon nitride), is utilized. Except for the deposition of the silicon-germanium alloy, array processing is conventional.

Abstract: An electrically conducting polymer composition which comprises an electron conjugated polymer and at least one stationary dopant which is selected from the group consisting of consisting of an oligomer having ionic groups with an average degree of oligomerization of 3 to 12 and ionic group-bonded particles which have an average particle size of 0.01 to 1 .mu.m and to at least surfaces of which ionic groups are bonded through covalent bonds, and which is dispersed in said electron conjugated polymer, which polymer composition provides an electrolytic capacitor having good frequency characteristics and long-term stability.

Abstract: An improved electronic device having metal-glazing type end terminations comprising a surface metal phase of Sn or Zn, is produced by sintering a paste material containing a matrix metal powder (Cu and/or Ni), a fluxing metal powder and an organic binding material, so that the surface portion serves to improve wettability and solderability of the end termination owing to its composition being similar to solder.

Abstract: An aluminum foil for electrolytic capacitors in which the sub-surface layer having a depth range from 0.1 to 0.2 .mu.m below the surface contains at least one element selected from the group consisting of Pb, Bi, and In at a total average concentration ranging from 0.001 to 0.1 wt %, and in which the inner part below the sub-surface layer contains less than 0.0001 wt % average concentration for each of Pb, Bi, and In, and in which the average aluminum purity throughout all layers from the surface to the inner part is not less than 99.90 wt %. This aluminum foil has adequate development of tunnel type etch pits and possesses superior electric characteristics and strength.

Abstract: A DRAM having stacked high capacitance capacitors formed by depositing a thick undoped polysilicon layer over field oxide areas thereon, patterning the polysilicon layer so as to have portions over the planned stacked capacitor areas, forming a silicon oxide layer on the exposed surface of the polysilicon, removing the silicon oxide layer from horizontal surfaces of the polysilicon layer by anisotropic etching, removing the polysilicon layer by isotropic etching leaving vertical silicon oxide structures, and forming openings to desired source/drain structures of the DRAM using lithography and etching. A bottom electrode polysilicon layer is deposited over the device and field oxide areas to make contact to the source/drain structures. A capacitor dielectric layer is formed over the bottom electrode polysilicon layer. A contact polysilicon layer is deposited as the top storage node electrode and the contact polysilicon layer and the dielectric layers are patterned.

Abstract: Finely divided particles of electrically conductive metal having a coating thereon a refractory metal oxide which is insoluble in the electrically conductive metal and non-reducing in the present of the electrically conductive metal, (2) the coating being sufficiently thick that the Isoelectric Point of the coated conductive metal particles is at least 1 unit higher than the Isoelectric Point of particles of the refractory metal oxide, (2) the tap density of the coated metal particles is at least 90% as high as the tap density of the uncoated metal particles, and (3) the metal oxide coating constitutes at least 0.05% by weight of the coated particles.

Abstract: An electronic component such as a capacitor having a pair of electrodes interposing a dielectric layer and a photosensitive metal oxide semiconductor layer therebetween. The electronic component is formed by immersing the layered body of one electrode, the dielectric, and the metal oxide layer in an electroless plating catalytic solution to have the catalyst deposited on the metal oxide layer and then by forming an electrode on the catalyst layer. The catalyst can be deposited in a pattern by irradiating the metal oxide layer with light during immersing the body in the catalytic solution.

Abstract: The connector provided with at least one capacitor comprises: a resin connector housing; a metallic shield casing; and at least one connector terminal formed with, in particular a flexible portion to absorb thermal deformation of the resin connector housing relative to the metallic shield casing due to a difference in thermal expansion coefficient between the two, caused when the connector terminal is soldered to the capacitor or a printed circuit board.

Abstract: A chip type solid electrolytic capacitor comprises a plurality of anode plates on each of which an oxide thin layer, an electrolyte layer and a conductive layer are in turn formed, and a cathode plate interposed between the conductive layers of the plurality of anode plates when the anode plates are integratedly combined such that the respective conductive layers thereof are opposed to each other. Also, a method of producing the capacitor comprises the steps of forming layers on a plurality of anode plates, combining the anode plates, sealing a clearance between the anode plates with an insulating material, and bending a cathode plate and its terminal along an outer surface of the anode plate.