Abstract: A method of manufacturing superconductor structures includes depositing a release film on a substrate, forming a stack of films comprising an elastic material and a superconductor film, releasing a portion of the elastic material by selective removal of the release film so that portion lifts out of the substrate plane to form elastic springs. A method of manufacturing superconductor structures includes depositing a release film on a substrate, forming a stack of films comprising at least an elastic material, releasing a portion of the elastic material so that portion lifts out of a plane of the substrate to form elastic springs, and coating the elastic springs with a superconductor film.

Abstract: A color conversion composition that converts incident light into light having a longer wavelength than the incident light is described, the color conversion composition including the following components (A) and (B): component (A): an organic light-emitting material; and component (B): a resin whose molecular structure has a fluorene skeleton.

Abstract: A method includes depositing a silicon layer, which includes first portions over a plurality of strips, and second portions filled into trenches between the plurality of strips. The plurality of strips protrudes higher than a base structure. The method further includes performing an anneal to allow parts of the first portions of the silicon layer to migrate toward lower parts of the plurality of trenches, and performing an etching on the silicon layer to remove some portions of the silicon layer.

Abstract: Disclosed herein are inductor/core assemblies for integrated circuits (ICs), as well as related structures, methods, and devices. In some embodiments, an IC structure may include an inductor and a magnetic core in an interior of the inductor. The magnetic core may be movable perpendicular to a plane of the inductor.

Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

Abstract: A memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, a memory opening fill structure including a vertical semiconductor channel and a memory film. The memory film includes a tunneling dielectric layer in contact with the vertical semiconductor channel, a first vertical stack of first dielectric oxide material portions located at levels of the insulating layers and including a dielectric oxide material of a first element, and a second vertical stack of second dielectric oxide material portions located at levels of the electrically conductive layers and including a mixed dielectric oxide material that is a dielectric oxide material of the first element and a second element.

Abstract: Provided are a dipolar molecule-stabalized perovskite material and an optoelectronic device. The invention aims to provide the perovskite material with the stable dipolar molecules and the optoelectronic device, which can indirectly enhance an interaction between metal cations and halogen anions, reduce a defect state density in the perovskite material, and inhibit ion migration in the perovskite material by utilizing dipolar groups in a dipolar molecule stabilizer. A component of the perovskite material with the stable dipolar molecules is D: A? 2An-1BnX3n+1 or D: ABX3, wherein A? is an organic amine cation, A is a monovalent cation, B is a metal cation, X is a monovalent anion, and D is the dipolar molecule stabilizer. A thermal stability, a phase stability and a photoluminescence stability of the material are remarkably enhanced, and working stabilities and efficiencies of the perovskite material and the optoelectronic device are remarkably improved.

Abstract: A semiconductor device includes first and second active regions parallel to each other and respectively extending in a first direction, an isolation layer between the first and second active regions, a first line structure and a second line structure overlapping the first and second active regions and the isolation layer, parallel to each other, and extending in a second direction, a first source/drain region on the first active region, and a second source/drain region on the second active region. The first line structure includes a first gate structure, a second gate structure, and a first insulating separation pattern between the first and second gate structures. The second line structure includes a third gate structure, a fourth gate structure, and a second insulating separation pattern between the third and fourth gate structures. The first and second insulating separation patterns are spaced apart from each other.

Abstract: Provided are a light-emitting device including a condensed cyclic compound represented by Formula 1, and an electronic apparatus including the light-emitting device. The light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and comprising an emission layer, wherein the light-emitting device further comprises a second capping layer outside the second electrode, the second capping layer having a refractive index of equal to or greater than 1.6, and the emission layer comprises at least one condensed cyclic compound represented by Formula 1.

Abstract: Described herein are transition metal complexes containing nickel(II), as the central metal atom, and tridentate and tetradentate ligands. The transition metal complexes also include an ancillary ligand with strong ?-donating properties. The ancillary ligand enhances the luminescence by increasing the chances of populating the emissive state. The transition metal complexes are emissive at room temperature and/or low temperature in various media, rendering them useful as light-emitting materials for OLEDs.

Abstract: A chip-transferring module, and a device and a method for transferring and bonding chips are provided. The chip-transferring module includes a mounting main body, a light-transmitting member, a first gas guiding structure and a second gas guiding structure. The mounting main body has a first accommodating space and a second accommodating space. The light-transmitting member is disposed in the first accommodating space. The first gas guiding structure is disposed in the mounting main body and has a plurality of suction openings exposed out of the mounting main body. The second gas guiding structure is disposed in the mounting main body and has at least one intake opening communicating with the second accommodating space.

Abstract: The present technology relates to a solid-state imaging element and electronic equipment that allow an increase in the signal charge amount Qs that each pixel can accumulate. A solid-state imaging element according to the first aspect of the present technology includes: a photoelectric conversion section formed in each pixel; and an inter-pixel separation section separating the photoelectric conversion section of each pixel, in which the inter-pixel separation section includes a protruding section having a shape protruding toward the photoelectric conversion section. The present technology can be applied to a back-illuminated CMOS image sensor, for example.

Abstract: A display device includes a pixel disposed in a display area. The pixel includes a first electrode and a second electrode spaced apart from each other; at least one intermediate electrode disposed between the first electrode and the second electrode; a plurality of light emitting elements electrically connected between a pair of adjacent electrodes of a plurality of electrodes including the first electrode, the second electrode, and the at least one intermediate electrode; and a plurality of repair patterns overlapping and disposed between a pair of adjacent electrodes of the plurality of electrodes.

Abstract: An apparatus for manufacturing a semiconductor device may include a chamber, a chuck provided in the chamber, and a biased power supply physically connected with the chuck. The apparatus may include a target component provided over the chuck and the biased power supply, and a magnetron assembly provided over the target component. The magnetron assembly may include a plurality of outer magnetrons and a plurality of inner magnetrons, and a spacing between each adjacent magnetrons of the plurality of outer magnetrons may be different from a spacing between each adjacent magnetrons of the plurality of inner magnetrons.

Abstract: A transistor device that includes a substrate comprising metallic gate contacts, a dielectric layer on the substrate comprising a polyimide or derivative thereof, a semiconductor layer on the dielectric layer comprising a semiconducting polymer confined in a host matrix material comprising a polyimide or derivative thereof, and source and drain contacts on the semiconductor layer.

Abstract: Emissive devices are provided that include a phosphorescent emitter placed within a threshold distance of an enhancement layer to achieve transient lifetimes of 200 ns or less.

Abstract: A resonator is based on a coplanar waveguide (CPW) structure that includes a first end portion having a first width and configured to be coupled to a first qubit. There is a middle portion having a second width that is narrower than the first width. There is a second end portion having a third width that is wider than the second width and configured to be coupled to a second qubit.

Abstract: A dipole alignment device includes an electric field forming part including a stage, and a probe part which form an electric field on the stage; an inkjet printing apparatus including at least one inkjet head which sprays ink including dipoles and a solvent with the dipoles dispersed therein onto the stage; a transportation part comprising a first moving part which moves the electric field forming part in at least one direction; and a light irradiation apparatus including a light irradiation part which applies light to the ink sprayed onto the stage.

Abstract: An organic electroluminescence device of an embodiment includes a first electrode, a second electrode, and an emission layer disposed between the first electrode and the second electrode, wherein the polycyclic compound includes a boranamine derivative, a first ring and a second ring, each directly linked to a boron atom of the boranamine derivative, a third ring and a fourth ring, each directly linked to a nitrogen atom of the boranamine derivative, and at least one substituted or unsubstituted boryl group, linked to at least one ring among the first to fourth rings, thereby showing long-life characteristics and excellent color reproducibility.

Abstract: The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.