Patents Examined by Ermias T Woldegeorgis
  • Patent number: 11404657
    Abstract: A solid-liquid-solid phase transformation (SLSPT) approach is used for fabrication of perovskite periodic nanostructures. The pattern on a mold is replicated by perovskite through phase change of perovskite from initially solid state, then to liquid state, and finally to solid state. The LED comprising perovskite periodic nanostructure shows better performance than that with flat perovskite. Further, the perovskite periodic nanostructure from SLSPT can be applied in many optoelectronic devices, such as solar cells, light emitting diodes (LED), laser diodes, transistors, and photodetectors.
    Type: Grant
    Filed: July 28, 2016
    Date of Patent: August 2, 2022
    Assignee: THE UNIVERSITY OF HONG KONG
    Inventors: Chik Ho Wallace Choy, Jian Mao
  • Patent number: 11406007
    Abstract: A radio frequency (RF) energy transmission line transition for coupling RF energy between a pair of RF transmission line sections disposed on intersecting surfaces of a corresponding one of a pair of conductive members, a first one of the pair of conductive members having a wall with a jog therein for receiving an end portion of a second one of the pair of conductive members, the end portion of an electrically conductive strip of the first one of the pair of radio frequency transmission line sections being disposed on, and electrically connected to, an electrically conductive strip of a second one of the pair of radio frequency transmission line sections.
    Type: Grant
    Filed: February 19, 2020
    Date of Patent: August 2, 2022
    Assignee: RAYTHEON COMPANY
    Inventors: Christopher M. Laighton, Susan C. Trulli, Elicia K. Harper
  • Patent number: 11401275
    Abstract: The present specification relates to a heterocyclic compound represented by Formula 1, an organic electronic device including the heterocyclic compound in an organic active layer, and a method for manufacturing the organic electronic device.
    Type: Grant
    Filed: April 2, 2019
    Date of Patent: August 2, 2022
    Assignee: LG CHEM, LTD.
    Inventors: Ji Hoon Kim, Songrim Jang, Doowhan Choi, Jung Ha Park, Bogyu Lim
  • Patent number: 11402556
    Abstract: A method for manufacturing integrated IR (IR=infrared) emitter elements having an optical filter comprises back side etching through a carrier substrate, forming adhesive spacer elements on a conductive layer on the carrier substrate, placing a filter substrate having a filter carrier substrate and a filter layer on the adhesive spacer elements, fixing the adhesive spacer elements to the carrier substrate and the filter substrate by curing, pre-dicing through the filter substrate for exposing the contact pads of the structured conductive layer, and dicing through the frame structure in the carrier substrate for separating the integrated IR emitter elements having the optical filter.
    Type: Grant
    Filed: February 3, 2020
    Date of Patent: August 2, 2022
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Stephan Pindl, Matthias Steiert
  • Patent number: 11398573
    Abstract: An x-ray detector can be small and have efficient cooling. In one embodiment, the x-ray detector can comprise a thermoelectric cooler (TEC) with upper electrical connections, a support, a cap, and a silicon drift detector (SDD). A planar side of the support can be directly affixed to upper electrical connections of the TEC. The support can have a non-planar side, opposite of the planar side, with a raised structure. A bottom face of the cap can be affixed to the raised structure, forming a cavity between the cap and the non-planar side of the support. The SDD can be affixed to a top face of the cap. In another embodiment, the non-planar side of the support can face the TEC. In another embodiment, a PIN photodiode can be directly affixed to a plate and the plate directly affixed to upper electrical connections of the TEC.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: July 26, 2022
    Assignee: Moxtek, Inc
    Inventors: Jason Maynard, Shawn S. Chin, Jonathan Barron, David S. Hoffman
  • Patent number: 11393944
    Abstract: The invention relates to a method for improving ohmic contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving contact behaviour between the contact grid and the emitter layer of silicon solar cells, which method is used after the contacting of these solar cells and thus reduces the scrap quota of solar cells with faulty contacting. In order to achieve this object, a method is proposed which has the following method steps. First a silicon solar cell (1) is provided with the emitter layer, the contact grid (5) and a back contact (3). Then the contact grid (5) is electrically contacted by a contact pin matrix (8) or contact plate connected to one terminal of a current source and the back contact (3) is electrically connected by a contact device connected to the other terminal of the current source.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: July 19, 2022
    Assignee: CE CELL ENGINEERING GMBH
    Inventor: Zhao Hongming
  • Patent number: 11387427
    Abstract: A display panel includes a display substrate, an opposite substrate, and a hydrophobic bonding portion disposed between the display substrate and the opposite substrate. The hydrophobic bonding portion is configured to bond the display substrate and the opposite substrate together, and an orthographic projection of the hydrophobic bonding portion on the display substrate is located outside a display region of the display substrate.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: July 12, 2022
    Assignees: CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Yuli Dai, Qiang Xiong, Chao Liu, Min Li
  • Patent number: 11374056
    Abstract: Disclosed herein are selector devices and related devices and techniques. In some embodiments, a selector device may include a first electrode, a second electrode, and a selector material between the first electrode and the second electrode. The selector material may include germanium, tellurium, and sulfur.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: June 28, 2022
    Assignee: Intel Corporation
    Inventors: Elijah V. Karpov, Brian S. Doyle, Ravi Pillarisetty, Prashant Majhi, Abhishek A. Sharma
  • Patent number: 11369049
    Abstract: An electromagnetic shielding element and, transmission line assembly and electronic structure package using the same are provided. The electromagnetic shielding element is applied to the transmission line assembly and the electronic structure package to shield electromagnetic noise. The electromagnetic shielding element includes a quantum well structure, and the quantum well structure includes at least two barrier layers and at least one carrier confined layer located between the two barrier layers. Each barrier layer has a thickness between 0.1 nm and 500 nm, and the thickness of the carrier confined layer is between 0.1 nm and 500 nm. The electromagnetic shielding element absorbs electromagnetic wave noise to suppress electromagnetic interference.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: June 21, 2022
    Assignee: HOTEK MATERIAL TECHNOLOGY CO., LTD.
    Inventors: Hao-Wei Fong, Ming-Goo Chien, Chia-Yu Wu
  • Patent number: 11367557
    Abstract: The structure includes a semiconductor chip connected to a substrate via one or more solder balls. The semiconductor chip includes one or more on-chip metal winding. The structure includes a first ferromagnetic core. The first ferromagnetic core is located below the semiconductor chip and above the substrate. The structure includes a second ferromagnetic core. The second ferromagnetic core is located above the semiconductor chip. The first ferromagnetic core and the second ferromagnetic core create a magnetic loop.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: June 21, 2022
    Assignee: International Business Machines Corporation
    Inventors: Xin Zhang, Todd Edward Takken
  • Patent number: 11362302
    Abstract: An array substrate, a manufacturing method thereof and a display panel. After a metal layer is formed on a substrate, a protective layer is formed on the metal layer.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: June 14, 2022
    Assignee: KUNSHAN GO-VISIONOX OPTO-ELECTRONICS CO., LTD.
    Inventor: Zhengshang Sun
  • Patent number: 11362289
    Abstract: An organic light-emitting diode (OLED) display panel includes a flexible substrate layer including a first area and two second area. A bending stress applied to the first area is greater than a bending stress applied to the second areas. A driver circuit layer is disposed on the second areas and non-bent areas. An organic planarization portion includes a first organic planarization layer disposed on the first area, and a second organic planarization layer disposed on the driver circuit layer and the first organic planarization layer. A light-emitting layer is disposed on the second organic planarization layer and located on the bent area and the non-bent areas.
    Type: Grant
    Filed: August 14, 2019
    Date of Patent: June 14, 2022
    Inventor: Qian Huang
  • Patent number: 11362178
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to asymmetric source and drain structures and methods of manufacture. The structure includes: at least one gate structure; a straight spacer adjacent to the at least one gate structure; and an L-shaped spacer on a side of the at least one gate structure opposing the straight spacer, the L-shaped spacer extending a first diffusion region further away from the at least one gate structure than the straight spacer extends a second diffusion region on a second side away from the at least one gate structure.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: June 14, 2022
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Jiehui Shu, Rinus Tek Po Lee, Baofu Zhu
  • Patent number: 11362257
    Abstract: A quantum bit device according to the present invention includes a first quantum bit substrate 10 which includes a first superconductive wiring 13 disposed to have a magnetically coupled portion with a first superconductive magnetic flux quantum bit 14 on a surface thereof, a second quantum bit substrate 11 which includes a second superconductive wiring 13 disposed to have a magnetically coupled portion with a second superconductive magnetic flux quantum bit 14 on a surface thereof, and a base substrate 12 which includes a third superconductive wiring 13 configured by two superconductive wirings extending parallel to each other on a surface thereof.
    Type: Grant
    Filed: May 9, 2018
    Date of Patent: June 14, 2022
    Inventors: Mutsuo Hidaka, Masaaki Maezawa
  • Patent number: 11355443
    Abstract: Dielets on flexible and stretchable packaging for microelectronics are provided. Configurations of flexible, stretchable, and twistable microelectronic packages are achieved by rendering chip layouts, including processors and memories, in distributed collections of dielets implemented on flexible and/or stretchable media. High-density communication between the dielets is achieved with various direct-bonding or hybrid bonding techniques that achieve high conductor count and very fine pitch on flexible substrates. An example process uses high-density interconnects direct-bonded or hybrid bonded between standard interfaces of dielets to create a flexible microelectronics package. In another example, a process uses high-density interconnections direct-bonded between native interconnects of the dielets to create the flexible microelectronics packages, without the standard interfaces.
    Type: Grant
    Filed: July 18, 2019
    Date of Patent: June 7, 2022
    Assignee: Invensas Corporation
    Inventors: Shaowu Huang, Javier A. Delacruz
  • Patent number: 11348808
    Abstract: A method for manufacturing a switch-mode converter includes forming a plurality of windings by coiling one or more conductors. Each of the windings is secured to one of a plurality of module bases arranged in a module array. At least one side of the array is encapsulated in a magnetic mold compound.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: May 31, 2022
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Kristen Nguyen Parrish, Charles Devries
  • Patent number: 11342130
    Abstract: A continuous inline method for production of photovoltaic devices at high speed includes: providing a substrate; depositing a first carrier transport solution layer with a first carrier transport deposition device to form a first carrier transport layer on the substrate; depositing a Perovskite solution comprising solvent and perovskite precursor materials with a Perovskite solution deposition device on the first carrier transport layer; drying the deposited Perovskite solution to form a Perovskite absorber layer; and depositing a second carrier transport solution with a second carrier transport deposition device to form a second carrier transport layer on the Perovskite absorber layer, wherein the deposited Perovskite solution is dried at least partially with a fast drying device which causes a conversion reaction and the Perovskite solution to change in optical density by at least a factor of 2 in less than 0.5 seconds after the fast drying device first acts on the Perovskite solution.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: May 24, 2022
    Assignee: Energy Materials Corporation
    Inventors: Scott Kenneth Christensen, Qi Li, Thomas Nathaniel Tombs, Stephan J. DeLuca
  • Patent number: 11342181
    Abstract: A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: May 24, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tzu-Ang Chao, Gregory Michael Pitner, Tse-An Chen, Lain-Jong Li, Yu Chao Lin
  • Patent number: 11329095
    Abstract: A photodetection device includes a pixel matrix in which each pixel includes a barrier photodetector. The pixel matrix includes an absorption layer, a barrier layer, a contact layer, and at least one separation element to delimit the pixels. At least one separation element extends above the contact layer, and forms at least one depletion zone that extends locally in the contact layer, to block the lateral circulation of charge carriers.
    Type: Grant
    Filed: February 4, 2020
    Date of Patent: May 10, 2022
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Francois Boulard, Cyril Cervera, Alexandre Ferron
  • Patent number: 11320324
    Abstract: A sensor device includes a piezoresistive element that is formed in a semiconductor substrate and has a polarity opposite to a polarity of the semiconductor substrate, diffusion wirings that are formed in the semiconductor substrate and have a polarity opposite to the polarity of the semiconductor substrate, a first barrier layer formed between the adjacent diffusion wirings in the semiconductor substrate and has a same polarity as the polarity of the semiconductor substrate, and a second barrier layer that is formed on surface layers of the piezoresistive element and the diffusion wirings and have a same polarity as the polarity of the first barrier layer.
    Type: Grant
    Filed: January 10, 2020
    Date of Patent: May 3, 2022
    Assignee: MINEBEA MITSUMI Inc.
    Inventor: Yasuhiro Kudo