Abstract: Provided are a light-emitting device including a condensed cyclic compound represented by Formula 1, and an electronic apparatus including the light-emitting device. The light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and comprising an emission layer, wherein the light-emitting device further comprises a second capping layer outside the second electrode, the second capping layer having a refractive index of equal to or greater than 1.6, and the emission layer comprises at least one condensed cyclic compound represented by Formula 1.

Abstract: Described herein are transition metal complexes containing nickel(II), as the central metal atom, and tridentate and tetradentate ligands. The transition metal complexes also include an ancillary ligand with strong ?-donating properties. The ancillary ligand enhances the luminescence by increasing the chances of populating the emissive state. The transition metal complexes are emissive at room temperature and/or low temperature in various media, rendering them useful as light-emitting materials for OLEDs.

Abstract: A chip-transferring module, and a device and a method for transferring and bonding chips are provided. The chip-transferring module includes a mounting main body, a light-transmitting member, a first gas guiding structure and a second gas guiding structure. The mounting main body has a first accommodating space and a second accommodating space. The light-transmitting member is disposed in the first accommodating space. The first gas guiding structure is disposed in the mounting main body and has a plurality of suction openings exposed out of the mounting main body. The second gas guiding structure is disposed in the mounting main body and has at least one intake opening communicating with the second accommodating space.

Abstract: A display device includes a pixel disposed in a display area. The pixel includes a first electrode and a second electrode spaced apart from each other; at least one intermediate electrode disposed between the first electrode and the second electrode; a plurality of light emitting elements electrically connected between a pair of adjacent electrodes of a plurality of electrodes including the first electrode, the second electrode, and the at least one intermediate electrode; and a plurality of repair patterns overlapping and disposed between a pair of adjacent electrodes of the plurality of electrodes.

Abstract: The present technology relates to a solid-state imaging element and electronic equipment that allow an increase in the signal charge amount Qs that each pixel can accumulate. A solid-state imaging element according to the first aspect of the present technology includes: a photoelectric conversion section formed in each pixel; and an inter-pixel separation section separating the photoelectric conversion section of each pixel, in which the inter-pixel separation section includes a protruding section having a shape protruding toward the photoelectric conversion section. The present technology can be applied to a back-illuminated CMOS image sensor, for example.

Abstract: An apparatus for manufacturing a semiconductor device may include a chamber, a chuck provided in the chamber, and a biased power supply physically connected with the chuck. The apparatus may include a target component provided over the chuck and the biased power supply, and a magnetron assembly provided over the target component. The magnetron assembly may include a plurality of outer magnetrons and a plurality of inner magnetrons, and a spacing between each adjacent magnetrons of the plurality of outer magnetrons may be different from a spacing between each adjacent magnetrons of the plurality of inner magnetrons.

Abstract: A transistor device that includes a substrate comprising metallic gate contacts, a dielectric layer on the substrate comprising a polyimide or derivative thereof, a semiconductor layer on the dielectric layer comprising a semiconducting polymer confined in a host matrix material comprising a polyimide or derivative thereof, and source and drain contacts on the semiconductor layer.

Abstract: Emissive devices are provided that include a phosphorescent emitter placed within a threshold distance of an enhancement layer to achieve transient lifetimes of 200 ns or less.

Abstract: A resonator is based on a coplanar waveguide (CPW) structure that includes a first end portion having a first width and configured to be coupled to a first qubit. There is a middle portion having a second width that is narrower than the first width. There is a second end portion having a third width that is wider than the second width and configured to be coupled to a second qubit.

Abstract: A dipole alignment device includes an electric field forming part including a stage, and a probe part which form an electric field on the stage; an inkjet printing apparatus including at least one inkjet head which sprays ink including dipoles and a solvent with the dipoles dispersed therein onto the stage; a transportation part comprising a first moving part which moves the electric field forming part in at least one direction; and a light irradiation apparatus including a light irradiation part which applies light to the ink sprayed onto the stage.

Abstract: An organic electroluminescence device of an embodiment includes a first electrode, a second electrode, and an emission layer disposed between the first electrode and the second electrode, wherein the polycyclic compound includes a boranamine derivative, a first ring and a second ring, each directly linked to a boron atom of the boranamine derivative, a third ring and a fourth ring, each directly linked to a nitrogen atom of the boranamine derivative, and at least one substituted or unsubstituted boryl group, linked to at least one ring among the first to fourth rings, thereby showing long-life characteristics and excellent color reproducibility.

Abstract: The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.

Abstract: A processing apparatus includes a cassette mounting section mounting a cassette storing a plurality of workpieces, a reading section reading an identification code provided on the cassette mounted on the cassette mounting section, and an information transmitting section transmitting information on the progress of process steps in processing each workpiece stored in the cassette, to a customer that has ordered the processing of each workpiece stored in the cassette.

Abstract: The present invention relates to a one-electrode cell and series of two or more cells as a device at temperatures from below to above room temperature comprising a very high permittivity ferroelectric. In a device constituted by one or more ferroelectricity-induced superconductor cells, the cells do not have to be in physical contact with one another; one terminal can be connected to a first cell and the other connected to a third cell without physical contact between any of the three cells. With the spontaneous and dynamic alignment of the dipoles of the ferroelectric, a potential difference is induced in different points of the surface of the cell, cells or device and a current can be harvested by conductor-terminals. The present invention can be used for contactless charging of energy storage devices and as a part of several components or products.

Abstract: An embodiment package includes a first fan-out tier having a first device die, a molding compound extending along sidewalls of the first device die, and a through intervia (TIV) extending through the molding compound. One or more first fan-out redistribution layers (RDLs) are disposed over the first fan-out tier and bonded to the first device die. A second fan-out tier having a second device die is disposed over the one or more first fan-out RDLs. The one or more first fan-out RDLs electrically connects the first and second device dies. The TIV electrically connects the one or more first fan-out RDLs to one or more second fan-out RDLs. The package further includes a plurality of external connectors at least partially disposed in the one or more second fan-out RDLs. The plurality of external connectors are further disposed on conductive features in the one or more second fan-out RDLs.

Abstract: An electronic device is provided. The electronic device includes a substrate, a plurality of signal lines and a plurality of units. The signal lines are disposed on the substrate. The units are disposed on the substrate. At least one of the units includes a first main pad, a first redundant pad, and an electronic component including a first electrode. In addition, one of the signal lines is electrically connected to the first electrode of the electronic component, the first main pad and the first redundant pad.

Abstract: A method for processing a wafer includes subjecting the wafer to a reduction treatment with heat and a reducing agent that has a melting point of lower than 600° C. The wafer is made of a material selected from the group consisting of lithium tantalate, lithium niobate, and a combination thereof. The wafer and the reducing agent are spaced apart from each other so that the reducing agent indirectly interacts with the wafer during the reduction treatment. Also disclosed is a processed wafer obtained by the method.

Abstract: Provided is an OLED that includes in its emissive region a first compound, a second compound, and a third compound, where the first compound is capable of functioning as a phosphorescent emitter in an OLED at room temperature, the second compound meets at least one of the following conditions: (1) the second compound is capable of functioning as a TADF emitter in an OLED at room temperature; and (2) the second compound is capable of forming an exciplex with the first compound in an OLED at room temperature, and the third compound is a fluorescent compound that functions as an emitter in the OLED of the present disclosure at room temperature.

Abstract: The disclosed graphene quantum dot composite includes a dielectric matrix including a metal oxynitride, and a graphene quantum dot dispersed in the dielectric matrix. The graphene quantum dot composite can reduce the aggregation-caused photoluminescence quenching of graphene quantum dots, and can improve a photoluminescence quantum yields of a graphene quantum dot.

Abstract: A method for manufacturing a device, the method including: preparing a first laminate including a first buffer layer and a second buffer layer; preparing a second laminate including a third buffer layer provided on a carbon electrode; and attaching the first laminate to the second laminate so that the second buffer layer is in contact with the third buffer layer.