Patents Examined by Evren Seven
  • Patent number: 12293975
    Abstract: A module includes a main substrate, a sub-module mounted on a first surface of the main substrate, a first component mounted on the first surface separately from the sub-module, and a first sealing resin formed so as to cover the first surface and the first component. The sub-module includes a second component, a second sealing resin disposed so as to cover the second component, and an inner shield film formed so as to cover at least a part of side surfaces of the second sealing resin and not to electrically connect to the main substrate. A ground connection conductor is disposed so as to electrically connect to the inner shield film, and the ground connection conductor is exposed to the outside.
    Type: Grant
    Filed: June 14, 2022
    Date of Patent: May 6, 2025
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Yoshihito Otsubo, Takafumi Kusuyama
  • Patent number: 12295235
    Abstract: The present disclosure provides a display panel, a manufacturing method thereof, and a display device. The display panel includes: a display functional layer; a functional electrode layer located at a side of the display functional layer; and a transparent conductive layer located at a side of the functional electrode layer away from the display functional layer and electrically coupled to the functional electrode layer, the transparent conductive layer at least including a metal layer and a transparent metal oxide conductive layer, and a thickness of the transparent metal oxide conductive layer being greater than a thickness of the metal layer.
    Type: Grant
    Filed: November 12, 2021
    Date of Patent: May 6, 2025
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Hejin Wang, Zewen Bo, Dalin Xiang, Bingwei Wang, Caiyu Qu
  • Patent number: 12293985
    Abstract: Provided are integrated circuit packages and methods of forming the same. An integrated circuit package includes an integrated circuit structure, a first die stack and a dummy die. The first die stack includes a plurality of first die structures and is bonded to the integrated circuit structure at a first side of the first die stack. The dummy die includes a plurality of through substrate vias, is located aside the first die stack and is electrically connected to the integrated circuit structure at the first side of the first die stack. In some embodiments, the height of the through substrate vias of the dummy die is the same as the height of the first die stack.
    Type: Grant
    Filed: July 21, 2022
    Date of Patent: May 6, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chia Hu, Ming-Fa Chen, Sung-Feng Yeh
  • Patent number: 12293982
    Abstract: A semiconductor structure and a method of manufacturing a semiconductor structure are provided. The semiconductor structure includes a first semiconductor substrate, a first conductive pad, and a first hybrid bonding pad. The first conductive pad is over the first semiconductor substrate. The first hybrid bonding pad is on the first conductive pad. The first hybrid bonding pad includes nano-twins copper. A thickness of the first hybrid bonding pad is less than a thickness of the first conductive pad.
    Type: Grant
    Filed: June 14, 2022
    Date of Patent: May 6, 2025
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventor: Yi-Jen Lo
  • Patent number: 12293994
    Abstract: Structures including multiple semiconductor devices and methods of forming same. The structure comprises a first device structure including a first well and a second well in a semiconductor substrate, a second device structure including a doped region in the semiconductor substrate, and a first high-resistivity region in the semiconductor substrate. The first well has a first conductivity type, the second well has a second conductivity type opposite to the first conductivity type, and the first well adjoins the second well to define a p-n junction. The doped region of the second device structure has the first conductivity type or the second conductivity type. The high-resistivity region has a higher electrical resistivity than the semiconductor substrate, and the high-resistivity region is positioned between the first device structure and the second device structure.
    Type: Grant
    Filed: September 28, 2022
    Date of Patent: May 6, 2025
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Vvss Satyasuresh Choppalli, Anupam Dutta, Rajendran Krishnasamy, Robert Gauthier, Jr., Xiang Xiang Lu, Anindya Nath
  • Patent number: 12295145
    Abstract: In an embodiment, a semiconductor device includes a first dielectric layer over a substrate and a first access transistor and a second access transistor in a memory cell of a memory array, the first access transistor and the second access transistor each including a bottom electrode in the first dielectric layer, a conductive gate in a second dielectric layer, where the second dielectric layer is over the bottom electrode and the first dielectric layer, a channel region extending through the conductive gate to contact the bottom electrode, and a top electrode over the channel region.
    Type: Grant
    Filed: August 9, 2023
    Date of Patent: May 6, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chenchen Jacob Wang, Sai-Hooi Yeong, Yu-Ming Lin, Chi On Chui
  • Patent number: 12288797
    Abstract: An image sensor includes a substrate including pixel regions and having a first surface, a second surface opposite the first surface, and a first trench recessed from the first surface, a shallow device isolation pattern provided in the first trench, and a deep device isolation pattern between the pixel regions and provided in the substrate. The deep device isolation pattern includes a semiconductor pattern penetrating at least a portion of the substrate, and an isolation pattern provided between the substrate and the semiconductor pattern. The isolation pattern includes a first isolation pattern adjacent to the second surface, and a second isolation pattern adjacent to the first surface. A first interface at which the first isolation pattern contacts the second isolation pattern is spaced apart from the shallow device isolation pattern. The first isolation pattern includes a different material from that of the second isolation pattern.
    Type: Grant
    Filed: March 31, 2022
    Date of Patent: April 29, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Junghyun Kim, Bumsuk Kim, Jonghoon Park, Hyungeun Yoo, Yun Ki Lee
  • Patent number: 12283477
    Abstract: A method of manufacturing a semiconductor device, including: providing a substrate including a first cell and a second cell; forming a plurality of first metal strips on a first plane; forming a first trench over a boundary between the first cell and the second cell, wherein a bottom surface of the first trench is located on a second plane over the first plane; filling the first trench with a non-conductive material, resulting in a separating wall; and forming a plurality of second metal strips on a third plane over the second plane, wherein the plurality of second metal strips comprise a first second metal strip and a second second metal strip separated from each other by the separating wall.
    Type: Grant
    Filed: June 8, 2023
    Date of Patent: April 22, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Shih-Wei Peng, Chia-Tien Wu, Jiann-Tyng Tzeng
  • Patent number: 12284819
    Abstract: Device scaling has increased the device density of integrated circuits (ICs) and reduced the cost of circuits. Today development of new device structures, use of new materials and complex process steps are implemented to continue scaling of the semiconductor devices. The added manufacturing steps and complexity have increased cost of ICs directly impacting the implementation of IoT devices that need low cost and high yields to be successful. ALEFT-M-LTSEE is a device that reduces cost while improving device performance by S/D resistance reduction. ALEFT-M-LTSEE enable scaling of gate and channel lengths while reducing impact of random threshold variation due to discrete dopants in and around the channel. By creating a flat field profile at the gate by use of low temperature epitaxy as source/drain extension, the short channel effects, and the impact of line edge variations of the gate are reduced.
    Type: Grant
    Filed: October 7, 2024
    Date of Patent: April 22, 2025
    Inventor: Mammen Thomas
  • Patent number: 12278191
    Abstract: A semiconductor package includes a lower redistribution structure including a wiring layer, and a via connected to the wiring layer; a semiconductor chip on the lower redistribution structure; wiring patterns disposed on the lower redistribution structure and extending in a horizontal direction, the wiring patterns including a first wiring pattern; metal patterns on the wiring patterns, the metal patterns including a first connection pillar and a first dummy pillar disposed on the first wiring pattern; an encapsulant on the lower redistribution structure, the semiconductor chip, the wiring patterns, and the metal patterns; and an upper redistribution structure on the encapsulant. The first connection pillar is directly connected to the upper redistribution structure.
    Type: Grant
    Filed: April 19, 2022
    Date of Patent: April 15, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Youngchan Ko, Myungsam Kang, Jeongseok Kim, Bongju Cho
  • Patent number: 12278311
    Abstract: Discussed is a display device including: a base part; a plurality of assembly electrodes extending in a first direction and disposed at predetermined intervals on the base part; a dielectric layer stacked on the base part to cover the plurality of assembly electrodes; a barrier wall portion stacked on the dielectric layer to define a cell overlapping at least a portion of the plurality of assembly electrodes along the first direction of the plurality of assembly electrode; and a plurality of semiconductor light emitting devices disposed in the cell, wherein the plurality of semiconductor light emitting devices comprise a magnetic layer extending in a longitudinal direction that intersects the first direction.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: April 15, 2025
    Assignee: LG ELECTRONICS INC.
    Inventors: Byoungkwon Cho, Junghoon Kim
  • Patent number: 12279414
    Abstract: An integrated circuit includes a substrate, a first transistor, and an interconnect structure. The first transistor is over the substrate. The interconnect structure is disposed on the substrate and includes a first dielectric layer and a memory module. The memory module includes a first memory device, a second memory device, and a third memory device. The first memory device is embedded in the first dielectric layer. The second memory device is disposed aside the first memory device and is embedded in the first dielectric layer. The first memory device, the second memory device, and the third memory device are different types of memory devices.
    Type: Grant
    Filed: June 19, 2022
    Date of Patent: April 15, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Katherine H Chiang, Chung-Te Lin
  • Patent number: 12272697
    Abstract: It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
    Type: Grant
    Filed: November 27, 2023
    Date of Patent: April 8, 2025
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toshinari Sasaki, Junichiro Sakata, Masashi Tsubuku
  • Patent number: 12263539
    Abstract: There is provided a manufacturing method of a wafer. The manufacturing method of a wafer includes a preparation step of preparing a wafer that includes a substrate and a stacked body disposed on the front surface side of the substrate and that has a device region and an outer circumferential surplus region, the device region having a plurality of devices disposed in a plurality of regions marked out by a plurality of planned dividing lines arranged to intersect each other, the outer circumferential surplus region surrounding the device region, and a laser processed groove forming step of forming laser processed grooves along the planned dividing lines through executing irradiation with a first laser beam with a wavelength having absorbability with respect to the stacked body, along the planned dividing lines from the side of the stacked body of the wafer.
    Type: Grant
    Filed: March 3, 2022
    Date of Patent: April 1, 2025
    Assignee: DISCO CORPORATION
    Inventor: Kazuki Hashimoto
  • Patent number: 12261192
    Abstract: A display device includes a first electrode disposed on a substrate; a second electrode disposed on the substrate, the second electrode being spaced apart from, and facing, the first electrode in a first direction; and a plurality of light-emitting elements extending in a length direction and having both ends disposed on the first electrode and second electrode, respectively, wherein the first electrode includes a plurality of first patterns which are recessed from a top surface of the first electrode and from a side surface of the first electrode that faces the second electrode, and the second electrode includes a plurality of second patterns which are recessed from a top surface of the second electrode and from a side surface of the second electrode that faces the first electrode.
    Type: Grant
    Filed: December 23, 2021
    Date of Patent: March 25, 2025
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventor: Ji Woong Choi
  • Patent number: 12255105
    Abstract: A semiconductor device includes a substrate having a first region and a second region, a first transistor in the first region, a second transistor in the first region, and a third transistor in the second region. The first transistor includes a first channel layer and a first gate dielectric layer on the first channel layer. The second transistor includes a second channel layer and a second gate dielectric layer on the second channel layer. The second gate dielectric layer is thicker than the first gate dielectric layer. The third transistor includes a third channel layer and a third gate dielectric layer on the third channel layer. The third gate dielectric layer is thicker than the second gate dielectric layer.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: March 18, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Pei-Hsun Wu, Ming-Hung Han, Po-Nien Chen, Chih-Yung Lin
  • Patent number: 12255235
    Abstract: A transistor structure is provided, the transistor structure comprising a source, a drain, and a gate between the source and the drain. The gate may have a top surface. A first field plate may be between the source and the drain. The first field plate may be L-shaped and having a vertical portion over a horizontal portion. A top surface of the vertical portion of the first field plate may be at least as high as the top surface of the gate. A second field plate, whereby the second field plate may be connected to the gate and the second field plate may partially overlap the horizontal portion of the first field plate.
    Type: Grant
    Filed: December 22, 2021
    Date of Patent: March 18, 2025
    Assignee: GlobalFoundries U.S. Inc.
    Inventor: Johnatan Avraham Kantarovsky
  • Patent number: 12255187
    Abstract: The present invention may be applied to display device-related technical fields and relates to a display device using a semiconductor light-emitting element, such as a micro light-emitting diode (LED), and a manufacturing method therefor. The present invention, according to one embodiment, may comprise: a substrate; a stepped film positioned on at least some pixel regions, among a plurality of individual pixel regions positioned on the substrate; an assembly electrode positioned on the substrate or the stepped film; an insulation layer positioned on the assembly electrode; a partition wall positioned on the insulation layer and defining an assembly groove having mounted therein a semiconductor light-emitting element forming the individual pixel; the semiconductor light-emitting element mounted in an assembly surface of the assembly groove; and a lighting electrode electrically connected to the semiconductor light-emitting element.
    Type: Grant
    Filed: August 1, 2019
    Date of Patent: March 18, 2025
    Assignee: LG ELECTRONICS INC.
    Inventors: Jisoo Ko, Hyeyoung Yang, Wonjae Chang, Hyunwoo Cho
  • Patent number: 12255267
    Abstract: A display device includes a first electrode and a second electrode disposed on a substrate and spaced apart from each other in a first direction. A light emitting element is disposed between the first electrode and the second electrode. A third electrode is disposed on the first electrode and electrically contacts an end portion of the light emitting element. A fourth electrode is disposed on the second electrode and electrically contacts another end portion of the light emitting element. A side of the third electrode and a side of the first electrode are located on a first virtual line substantially perpendicular to the substrate. A side of the fourth electrode facing the side of the third electrode and the side of the second electrode are located on a second virtual line substantially perpendicular to the substrate.
    Type: Grant
    Filed: May 4, 2021
    Date of Patent: March 18, 2025
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Chong Sup Chang, Cha Dong Kim, Hee Na Kim, In Kyung Yoo, Sang Jin Lee
  • Patent number: 12256536
    Abstract: Embodiments of the present disclosure disclose a semiconductor base plate and a semiconductor device. An array region includes a primary memory cell. A peripheral region includes an antifuse memory cell. The antifuse memory cell and the primary memory cell are formed by a same process.
    Type: Grant
    Filed: May 11, 2022
    Date of Patent: March 18, 2025
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventor: Qiang Long