Abstract: Caustic-free detergent compositions are provided. Detergent compositions including an aminocarboxylate, water conditioning agent, non-caustic source of alkalinity and water beneficially do not require the use of additional surfactants and/or polymers to provide suitable detergency and prevent scale build-up on treated surfaces and enhance protein removal from the treated surfaces. Beneficially the detergent compositions have a concentrate pH less than about 11.5. The detergent compositions are used with a sanitizer to employ the low alkaline detergent compositions are particularly suitable for use as low temperature ware wash detergents that beneficially reduce scale build-up. Methods of employing the low alkaline detergent compositions are also provided.

Abstract: A non-aqueous wellbore servicing fluid comprising a fluid loss additive wherein the fluid loss additive comprises the reaction product of (i) a functional polymer and (ii) an oligomerized fatty acid. A method of conducting an oil-field operation comprising placing a non-aqueous wellbore servicing fluid downhole wherein the non-aqueous wellbore servicing fluid comprises a fluid loss additive comprising the reaction product of (i) a functional polymer and (ii) an oligomerized fatty acid.

Abstract: Disclosed herein is a cleaner concentrate comprising: greater than 10 weight percent of a freezing point depressant, 0.5 to 35 weight percent of oxalic acid, and an azole compound, wherein weight percent is based on the total weight of the cleaner concentrate.

Abstract: The invention relates to a non-aqueous stripping composition for removing cured organic paint from substrates comprising i. a source of hydroxide ions; ii. a high-boiling alcohol having a boiling point of at least 100° C.; and iii. at least one surfactant represented by the following formula R—O—(CH2CH2O)nH and ?wherein R is an alkyl chain, linear or branched having a 2 to 24 carbon atom chain length.

Abstract: Compositions for removing residues from a semiconductor structure. The compositions comprise water, a base, a polydentate chelator, a degasser, and a fluorine source. The compositions comprise greater than or equal to approximately 99 wt % of the water and are formulated to exhibit a pH of from approximately 10.0 to approximately 12.0. Methods of forming and using the compositions are also disclosed.

Abstract: Compositions and methods based on the use of fluoroalkene containing from 3 to 4 carbon atoms and at least one carbon-carbon double bond, such as HFO-1214, HFO—HF0-1233, or HF0-1354 having properties highly beneficial in foaming and blowing agent applications, articles and methods.

Abstract: A dispersion having a cationic zeta potential for use as a base coating on a sheet of paper or paperboard as a primer for a functional barrier top coating, wherein the composition comprises an anionic pigment containing mixture comprising one or more anionic pigments in an amount of at least about 20% dry weight of the mixture, and one or more polyamine-epihalohydrin cationic wet strength resin.

Abstract: Provided is a cleaning composition and its applications. The cleaning composition comprises a mixture of a halogen-containing compound and an organic solvent. In some embodiments, the halogen-containing compound is TetraButylAmmonium Fluoride (TBAF) and the organic solvent is either propylene glycol monomethylether acetate (PGMEA) or a mixture of PGMEA and propylene glycol monomethylether (PGME). The cleaning composition is effective in removing silicon-containing material off of a surface of an apparatus. In some embodiments, the apparatus comprises a pipeline for delivering the silicon-containing material in semiconductor spin-coating processes. In some embodiments, the apparatus comprises a drain for collecting waste fluid in semiconductor spin-coating processes. In some embodiments, the apparatus comprises a patterned substrate.

Abstract: Provided herein are polishing compositions for removal of Co, for example, selectively over Cu, and methods of their use. A polishing composition comprising an abrasive and one or more Co complexors, where the polishing composition has a pH of 9 or more, and the Co complexor comprises one or more of functional groups selected from phosphonic acid (—P(?O)(OH)2) group or carboxyl (—C(?O)OH) group.

Abstract: Caustic-free detergent compositions are provided. Detergent compositions including an aminocarboxylate, water conditioning agent, non-caustic source of alkalinity and water beneficially do not require the use of additional surfactants and/or polymers to provide suitable detergency and prevent scale build-up on treated surfaces. The detergent compositions are used with a sanitizer to employ the caustic-free detergent compositions are particularly suitable for use as low temperature ware wash detergents that beneficially reduce scale build-up. Methods of employing the caustic-free detergent compositions are also provided.

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: In a method of treating a substrate including patterns having line-space dimensions of 50 nm or below, the substrate is rinsed by an aqueous composition including at least one non-ionic surfactant A and at least one hydrophobizer B. The at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration. The hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5-95° compared to the contact angle of water to the substrate before such contacting.

Abstract: A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a water-miscible organic solvent, an amine compound, an organic acid, and a fluoride ion source. The compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.

Abstract: The present invention relates to an agent in particular for the surface epilamization of an article comprising one or more molecules having the general formula (1) A-F??(1) wherein: A is an anchor group comprising a moiety selected from the group consisting of silane groups, hydroxyl groups, catechol groups, phosphate groups, phosphonate groups, carboxylic acid groups, amine groups, thiol groups and any combination of two or more of the aforementioned groups and F is a functionalizing group, wherein the functionalizing group com-prises a branched polymer having a backbone and at least two side groups, wherein at least one of the side groups is a C1-20 hydrocarbon group or a perhalogenated C1-20 hydrocarbon group. The invention pertains to the technical field of epilame for timepiece mechanical parts.

Abstract: A surface cleaning substrate, which is essentially dry and loaded with a cleaning composition, which may very suitably be stored and transported in its dry form and which may be activated for surface cleaning by simple addition of a carrier, such as water. A method for the manufacture of such a loaded dry substrate, and to the method of surface cleaning using such a loaded dry substrate is also disclosed.

Abstract: Provided is a resin composition for an under coat of an UV coating layer and a coated steel sheet using the resin composition. The coated steel sheet comprises a material steel sheet; an under coat layer including a cured product of a resin composition for the under coat layer which contains a main resin and a metal powder, the under coat layer being formed on one side or both sides of the material steel sheet; and a top coat layer formed on the under coat layer and containing a radical compound, thereby providing a superior appearance, scratch resistance, corrosion resistance and superior weldability.

Abstract: An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract: In order to selectively further etch silicon nitride by a cleaning liquid in cleaning of a substrate having silicon nitride and silicon oxide on the substrate, a cleaning liquid for use in cleaning of a substrate having silicon nitride and silicon oxide on the same substrate, at least a portion of one or both of the silicon nitride and the silicon oxide being exposed on the substrate, including phosphoric acid, electrolytic sulfuric acid produced by electrolysis and including persulfuric acid suitably having a concentration of 1.0 g/L to 8.0 g/L, and water is suitably brought into contact with the substrate at 165° C. or higher and lower than a boiling point to selectively etch the silicon nitride on the substrate, thereby effectively etching the silicon nitride while etching of silicon oxide is suppressed to favorably clean a semiconductor substrate high in degree of integration having a pattern line width of 37 nm or less.

Abstract: Use of a compound of Formula (I) as a metal surface corrosion activator, a formulation containing the same compound and a process by using the same compound for providing a clean metal surface. Said formulation may further comprise water, a solvent such as a dipolar aprotic solvent, a water miscible organic solvent, or an organic base.

Abstract: A biaxially oriented composite film includes a polyester substrate supporting one or more coatings on one or both surfaces of said substrate, wherein the polyester substrate is a biaxially oriented film; wherein the one or more coatings is/are derived from a predominantly inorganic hardcoat coating composition including inorganic particles contained in a polymerisable predominantly inorganic matrix; and wherein the biaxially oriented composite film has been annealed at a temperature Ta (° C.) above Tg where Tg<Ta?Tg+100 (° C.) for a time t after thermal equilibrium where 1 hour ?t?72 hours. A method of making the film is provided.