Abstract: Disclosed is a test circuit for testing an integrated circuit core or an external circuit of the integrated circuit core. The test circuit may not only transmit a cell function input to a cell function output using only one multiplexer in a bypass mode, may but also use a clock gating scheme capable of blocking a clock signal from transmitting to a scan flip-flop to hold a capture procedure.

Abstract: A system and method for detecting and correcting memory errors in CXL components is presented. The method includes receiving, into a decoder, a memory transfer block (MTB), wherein the MTB comprises data and parity information, wherein the MTB is arranged in a first dimension and a second dimension. An error checking and a correction function on the MTB is performed using a binary hamming code logic within the decoder in the first dimension. An error checking and a correction function on the MTB is performed using a non-binary hamming code logic within the decoder in the second dimension. Further, the binary hamming code logic and the non-binary hamming code logic perform the error checking on the MTB simultaneously.

Abstract: Methods, systems, and devices for topology-based retirement in a memory system are described. In some examples, a memory system or memory device may be configured to evaluate error conditions relative to a physical or electrical organization of a memory array, which may support inferring the presence or absence of defects in one or more structures of a memory device. For example, based on various evaluations of detected errors, a memory system or a memory device may be able to infer a presence of a short-circuit, an open circuit, a dielectric breakdown, or other defects of a memory array that may be related to wear or degradation over time, and retire a portion of a memory array based on such an inference.

Abstract: Provided is a communication device that implements error correction in a physical layer in combination with HARQ. The communication device on the transmitting side adds a CRC sequence to an information sequence, divides an information sequence having a CRC sequence added thereto into a plurality of sequences, implements first FEC coding by using a sequence obtained by division, adds a CRC sequence to a coded sequence obtained after first FEC coding, implements second FEC coding by using a coded sequence having a CRC sequence added thereto, couples coded sequences obtained after second coding, transmits a coded information sequence obtained after coupling to another communication device, and controls retransmission with a coded sequence obtained after first coding as a unit.

Abstract: The present disclosure provides a DFT architecture for ICs and a method for testing the ICs with the proposed DFT architecture. The present disclosure also includes a focus on USB PD protocol with respect to the DFT architecture. The present disclosure also includes focus on testing IC with single I/O pin. The DFT architecture primarily comprises of a test mode controller and reuses the USBPD protocol framework logic comprising analog USBPD CC circuitry in analog block and the USBPD signaling, protocol logic in digital block for the test purposes. The DFT architecture is implemented with analog test modes and digital test modes using a single I/O pin, wherein analog test modes comprises of analog trims and observation modes and digital test modes comprises of LBIST, ATPG and digital observation modes. The method disclosed is directed to the functions associated with testing the USBPD ICS using single I/O pin.

Abstract: A memory is provided in which a scan chain covers the redundancy logic for column redundancy as well as the redundancy multiplexers in each column. The redundancy logic includes a plurality of redundancy logic circuits arranged in series. Each redundancy logic circuit corresponds to a respective column in the memory. Each column is configured to route a shift-in signal through its redundancy multiplexers during a scan mode of operation.

Abstract: A UART includes a transmission register, a receive register, a virtual remappable pin, a parity error check circuit to evaluate contents of the receive register for a parity error, and control logic to determine contents of the transmission register. The contents include underlying data and a parity bit based thereupon. The control logic is to route the contents through the first virtual remappable pin to the receive register. The control logic is to, before reception of the entire contents at the receive register, cause modified contents to be provided to the receive register. The modified contents are to cause a parity error. The modified contents are to include different underlying data or a different parity bit than the contents of the transmission register. The control logic is to determine whether the parity error check circuit detected the parity error.

Abstract: A read disturb information determination system includes a storage device coupled to a global read temperature identification system. The storage device reads, from a first row in a storage subsystem in the storage device, data stored in bits that were previously identified as being susceptible to read disturb effects, and error correction information associated with the data. The storage device uses the error correction information to identify a number of the bits that store portions of the data with errors and, based on the number of bits that store portions of the data with errors, determines read disturb information for the first row in the storage subsystem in the storage device. The storage device then uses the read disturb information to generate a read temperature for a second row in the storage subsystem in the storage device, and provides the read temperature to the global read temperature identification system.

Abstract: A memory-testing circuit configured to perform a test of reference bits in a memory. In a read operation, outputs of data bit columns are compared with one or more reference bit columns. The memory-testing circuit comprises: a test controller and association adjustment circuitry configurable by the test controller to associate another one or more reference bit columns or one or more data bit columns with the data bit columns in the read operation. The test controller can determine whether the original one or more reference bit columns have a defect based on results from the two different association.

Abstract: Embodiment techniques map parity bits to sub-channels based on their row weights. In one example, an embodiment technique includes polar encoding, with an encoder of the device, information bits and at least one parity bit using the polar code to obtain encoded data, and transmitting the encoded data to another device. The polar code comprises a plurality of sub-channels. The at least one parity bit being placed in at least one of the plurality of sub-channels. The at least one sub-channel is selected from the plurality of sub-channels based on a weight parameter.

Abstract: A transmitter is provided. The transmitter includes: a Low Density Parity Check (LDPC) encoder configured to encode input bits to generate an LDPC codeword including the input bits and parity bits to be transmitted in a current frame; a parity permutator configured to perform by group-wise interleaving a plurality of bit groups configuring the parity bits based on a group-wise interleaving pattern comprising a first pattern and a second pattern; a puncturer configured to puncture some of the parity-permutated parity bits; and an additional parity generator configured to select at least some of the punctured parity bits to generate additional parity bits to be transmitted in a previous frame of the current frame, based on the first pattern and the second pattern.

Abstract: A memory system according to an embodiment includes a nonvolatile memory and a memory controller. The nonvolatile memory includes a plurality of memory cells. The memory controller is configured to control the nonvolatile memory. In read operation for the memory cells, the memory controller is configured to: perform tracking including a plurality of reads in which a read voltage is shifted; determine a hard bit read voltage based on results of the tracking; calculate a soft bit read voltage based on the determined hard bit read voltage; perform soft bit read using the calculated soft bit read voltage; and perform a soft bit decoding process using a result of the soft bit read and a log-likelihood ratio table associated with the calculated soft bit read voltage.

Abstract: The present invention relates to a method for testing a device under test. A component of the device under test generates or receives a bus signal, wherein the bus signal comprises a first data signal or a second data signal, and wherein an amplitude of the first data signal is different from an amplitude of the second data signal. A measurement instrument measures an amplitude of the bus signal. Further, it is determined whether the bus signal comprises the first data signal or the second data signal, based on the measured amplitude of the bus signal.

Abstract: Provided are a memory device and a memory controller, which are configured to repair a weak word line, and a method of operating a storage device including the memory device and the memory controller. A memory device includes a memory cell array including a plurality of normal word lines and at least one spare word line, and a repair controller configured to set memory cells connected to at least one weak word line to a first operation mode and further configured to set memory cells connected to the at least one spare word line to a second operation mode. The at least one weak word line is detected from among the normal word lines based on a test result.

Abstract: For a non-volatile memory that uses hard bit and soft bit data in error correction operations, to reduce the amount of soft bit data that needs to be transferred from a memory to the controller and improve memory system performance, the soft bit data can be compressed before transfer. After the soft bit data is read and stored into the internal data latches associated with the sense amplifiers, it is compressed within these internal data latches. The compressed soft bit data can then be transferred to the transfer data latches of a cache buffer, where the compressed soft bit data can be consolidated and transferred out over an input-output interface. Within the input-output interface, the compressed data can be reshuffled to put into logical user data order if needed.

Abstract: A non-volatile memory combines a hard bit and a soft bit read into a single, efficient soft sense sequence by using two sense per state level to improve read time efficiency. Rather than a standard hard bit read, where two soft bit reads are performed, offset above and below the hard bit read value, the hard bit read is shifted so that it reliable senses one state but less reliably senses the other state and soft bit data is only determined for the less reliably sensed state. This reduces the amount of soft bit data. The efficient soft sense sequence can be used as a default read mode, providing soft bit information for ECC correction without triggering a read error handling flow. Merging the soft bit and hard bit sense into one sequence can avoid extra overhead for read sequence operations.

Abstract: A fail detecting method of a memory system including a nonvolatile memory device and a memory controller, the fail detecting method including: counting, by the memory controller, the number of erases of a word line connected to a pass transistor; issuing a first erase command, by the memory controller, when the number of erases reaches a reference value; applying a first voltage, by the nonvolatile memory device, in response to the first erase command, that causes a gate-source potential difference of the pass transistor to have a first value; detecting, by the memory controller, a leakage current in a word line, after the applying of the first voltage; and determining, by the memory controller, the word line as a fail when a leakage voltage caused by the leakage current is greater than a first threshold value.

Abstract: A bit interleaving method involves applying a bit permutation process to a QC-LDPC codeword made up of N cyclic blocks each including Q bits, and dividing the codeword after the permutation process into a plurality of constellation words each including M bits, the codeword being divided into F×N/M folding sections, each of the constellation words being associated with one of the F×N/M folding sections, and the bit permutation process being applied such that each of the constellation words includes F bits from each of M/F different cyclic blocks in a given folding section associated with a given constellation word.

Abstract: Methods, systems, and devices for forwarding a code word address are described. A memory subsystem, for example, may configure a code word including user data as a forwarded code word when the code word becomes unreliable or invalid close to or beyond an error recovery capability of the memory subsystem. The memory subsystem may configure the forwarded code word using a forwarded code word format and structure, which may include a bit field in the forwarded code word to indicate a code word condition and to store a quantity of duplicates of a forwarding address. When the memory subsystem receives a code word, the memory system may determine the code word as a forwarded code word such that the memory system may determine a forwarding address (e.g., from the code word). The memory subsystem may then use the forwarding address to access user data.

Abstract: A convolutional code rate matching method and a communication apparatus are provided. A puncturing pattern of a second codeword at a second code rate is obtained based on a puncturing pattern of a first codeword at a first code rate. A second puncturing location set of the second codeword is a subset of a first puncturing location set of the first codeword. When a transmit device decreases a code rate from the first code rate to the second code rate, a redundant bit is sent at a location of a complementary set of the second puncturing location set relative to the first puncturing location set. Compared with the first puncturing location set, the second puncturing location set may obtain more incremental redundant bits, to decrease a channel encoding rate. This can improve decoding performance of a convolutional code.