Abstract: The present disclosure relates to devices and methods for programming one-time programmable fuses of microphone assemblies. One microphone assembly includes a housing, a transducer, a filter circuit, and an integrated circuit. The integrated circuit has a fuse block having a one-time programmable (OTP) fuse configurable in a programming mode of operation during which a voltage applied to the supply voltage contact is increased relative to a voltage applied to a supply voltage contact in a normal mode of operation. The microphone assembly further includes a protection circuit configured to regulate a voltage at the voltage input terminal of the integrated circuit during the programming mode of operation based on a comparison of a voltage at the voltage input terminal with a reference voltage. The voltage on the voltage input terminal of the integrated circuit tracks the reference voltage during the programming mode of operation.

Abstract: Aspects generally relate to a heterojunction bipolar transistor (HBT), and method of manufacturing the same. The HBT including an emitter a first, a first side of a base coupled to a second side of the emitter opposite the first side of the emitter. A collector coupled to the base on a second side of the base opposite the emitter, wherein an area of a junction between the base and the collector is less than or equal to an area of a junction between the base and the emitter. A dielectric coupled to the collector. A first conductive base contact coupled to the base and adjacent to the collector and extending over a base-collector junction, the conductive base contact operative as a field plate.

Abstract: An acoustic wave device includes a support substrate including silicon, a piezoelectric layer provided directly or indirectly on the support substrate, and an interdigital transducer (IDT) electrode provided on the piezoelectric layer. When a wavelength defined by an electrode finger pitch of the IDT electrode is ?, a thickness of the piezoelectric layer is about 1? or less. VL, which is an acoustic velocity of a longitudinal wave component of a bulk wave propagating through the piezoelectric layer, satisfies Unequal Equation (2) below in relation to an acoustic velocity VSi-1 determined by Equation (1) below: VSi-1=(V2)1/2 (m/sec)??Equation (1), VSi-1?VL??Unequal Equation (2), V2 in Equation (1) is a solution of Equation (3), and Ax3+Bx2+Cx+D=0??Equation (3).

Abstract: A BAW resonator comprises a center area (CA), an underlap region (UL) surrounding the center area having a thickness smaller than the thickness dC of the center region and a frame region (FR), surrounding the underlap region having thickness dF greater than dC.

Abstract: A filter includes a series arm resonator that defines at least a portion of a signal path connected between first and second terminals, a parallel arm resonator including one end that is grounded, a first inductor including one end that is connected to one end of the series arm resonator and another end that is connected to another end of the parallel arm resonator, and a second inductor including one end that is connected to another end of the series arm resonator and another end that is connected to the other end of the parallel arm resonator. A relative band width of the parallel arm resonator is smaller than a relative band width of the series arm resonator.

Abstract: A sensor system that combines the sensing application of surface acoustic wave (SAW) sensor and sensor signal transfer though the enclosure wall via acoustic means. The sensor system includes SAW sensor placed inside the enclosure and at least one pair of bulk acoustic wave (BAW) transducers, one mounted inside and second outside the enclosure wall, allowing the interrogation of SAW sensor from outside the enclosure. The external BAW transducer converts interrogation electrical pulse into acoustic pulse which travels though the enclosure wall to the internal BAW transducer. The internal BAW transducer converts the interrogation electrical pulse to electrical pulse and transfers it to SAW sensor. The response of the SAW transducer containing series of electric pulses is converted to the series of acoustic pulses by internal BAW transducer which propagates though enclosure wall.

Abstract: A power amplifier comprising: a first amplifier; a second amplifier, wherein the first and second amplifiers are arranged in parallel; an analogue pre-distortion network; a first coupler; and a second coupler, wherein the first coupler is configured to receive an input signal, direct said input signal to the first amplifier, and direct a first pre-distortion signal to the analogue pre-distortion network, wherein the first pre-distortion signal comprises a first distortion component generated at the input of the first amplifier, and the analogue pre-distortion network is configured to receive the first pre-distortion signal and manipulate its amplitude and/or phase to obtain a manipulated first pre-distortion signal, and the second coupler is configured to direct the manipulated first pre-distortion signal to the second amplifier.

Abstract: A multi-stage matching network filter circuit device. The device comprises bulk acoustic wave (BAW) resonator device having an input node, an output node, and a ground node. A first matching network circuit is coupled to the input node. A second matching network circuit is coupled to the output node. A ground connection network circuit coupled to the ground node. The first or second matching network circuit can include an inductive ladder network including a plurality of series inductors in a series configuration and a plurality of grounded inductors wherein each of the plurality of grounded inductors is coupled to the connection between each connected pair of series inductors. The inductive ladder network can include one or more LC tanks, wherein each of the one or more LC tanks is coupled between a connection between a series inductor and a subsequent series inductor, which is also coupled to a grounded inductor.

Abstract: A Doherty power amplifier and a device are disclosed. In a combiner of the Doherty power amplifier, a first input port and a termination port are open coupled by at least two coupled microstrip lines and/or a second input port and an output port are open coupled by at least two coupled microstrip lines. Therefore, a balanced amplitude bandwidth may be obtained and may be much broader than that of the existing solutions, in addition, a controllable size or a potentially small size may be realized. Furthermore, the Doherty power amplifier in this disclosure may provide large 2nd harmonic suppression to meet product spectrum mask requirements.

Abstract: A current control circuit controls a base current of a first transistor included in a bias circuit outputting a bias current to a power amplifier based on a base-collector voltage of the first transistor. The current control circuit includes a first circuit that outputs a signal associated with the base-collector voltage of the first transistor, and a second circuit that, based on the signal, provides electrical continuity between a base of the first transistor and a reference potential.

Abstract: A high-frequency apparatus includes a first device and a second device, and a mounting substrate on which the first and second devices are mounted. At least the second device is an acoustic wave device including a piezoelectric substrate and a functional element. The first device and the second device are adjacent to or in a vicinity of each other on the mounting substrate. A coefficient of linear expansion of a substrate of the first device is lower than a coefficient of linear expansion of the mounting substrate, and a coefficient of linear expansion of the piezoelectric substrate of the second device is higher than the coefficient of linear expansion of the mounting substrate.

Abstract: A power supply for a radio-frequency power amplifier includes: first and second linear circuits, configured to linearly amplify a low-power signal and a high-power signal in a first envelope signal respectively and provide first and second voltages to the radio-frequency power amplifier respectively, wherein the low-power signal is a signal with a power ratio less than or equal to 30% in the envelope signal, and the high-power signal other than the low-power signal is a signal with a power ratio greater than or equal to 70% in the envelope signal; and a third circuit, configured to detect the linearly-amplified high-power signal and work in a constant on time control mode having a constant on time or a constant off time control mode having a constant off time so as to provide a third electric current to the radio-frequency power amplifier according to the detected linearly-amplified high-power signal.

Abstract: An electronic apparatus is described. The apparatus includes a circuit element configured to output a signal comprising a modulated frequency component. The apparatus also includes a filter arrangement comprising first, second and third notch filter arrangements, wherein each of the first and second notch filter arrangements comprise a first series inductor, and a series shunt configuration comprising a second inductor and a capacitor coupled in series and the third notch filter arrangement comprises a series inductor and a shunt capacitor, wherein each of the notch filter arrangements are configured to generate a notch in a frequency response to attenuate the output signal at a frequency of the modulated frequency component.

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Abstract: Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.

Abstract: An acoustic wave device includes: a Y-cut X-propagation lithium tantalate substrate having a cut angle of 5° or greater and 18° or less; and a grating electrode that is formed of one or more metal films stacked on the lithium tantalate substrate, a number of the one or more metal films being n (n is a natural number), excites an acoustic wave, and meets a condition: 0.16 ? ? ? ? i = 1 n ? ? ( hi × ? ? ? i ? ? ? 0 ) ? 0.24 ? ? where ?i represents a density of each metal film of the one or more metal films, hi represents a film thickness of the each metal film, ?0 represents a density of Mo, and ? represents a pitch.

Abstract: An amplifier. In some embodiments, the amplifier includes a resonant circuit having a resonant frequency, a pump input, a signal input, and a signal output. The resonant circuit may include a Josephson junction connected to the pump input, the Josephson junction being a superconducting-normal-superconducting junction having two superconducting terminals and being configured to adjust the resonant frequency of the resonant circuit based on a signal received at the pump input.

Abstract: An RF triplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Abstract: Embodiments of this application disclose a signal processing circuit, a radio frequency signal transmitter, and a communications device, and relate to the field of electronic device technologies, to improve power amplification efficiency of the signal processing circuit. The signal processing circuit includes: a splitter, a radio frequency signal converter, a first branch power amplifier, a second branch power amplifier, and a combiner. The splitter is connected to the radio frequency signal converter, the radio frequency signal converter is connected to the first branch power amplifier and the second branch power amplifier, and the first branch power amplifier and the second branch power amplifier are connected to the combiner.

Abstract: A filter circuit includes a pass band filter portion configured to pass signals in a first frequency spectrum and attenuate or block signals in a second frequency spectrum. The first frequency spectrum and the second frequency spectrum do not overlap. The pass band filter portion is configured to cause a return loss of more than 10 decibels (dB) in the first frequency spectrum.