Abstract: Methods of operating a memory device are disclosed. A method may include determining an amount of activity associated with at least one memory bank of a memory device. The method may further include adjusting a row hammer refresh rate for the at least one memory bank based on the amount of activity associated with the at least one memory bank. Memory devices and systems are also described.

Abstract: The nonvolatile memory includes a plurality of nonvolatile memory cells configured to store multiple data states; a word line connected to a control gate of at least one of the plurality of non-volatile memory cells; a control gate line to supply a control gate signal; a word line switch connected between the word line and the control gate line to control the potential applied to the word line from the control gate line; and a memory controller circuit. The memory controller circuit is configured to control a word line potential on the word line and a control gate potential on the control gate line and to control a state of the control gate. The memory controller circuit, when the nonvolatile memory transitions to a not-on state, is further configured to turn off the word line switch and to charge the control gate line to a charged potential.

Abstract: Systems and methods for cavitation-guided opening of a targeted region of tissue within a primate skull are provided. In one example, a method includes delivering one or more microbubbles to proximate the targeted region, applying an ultrasound beam, using a transducer, through the skull of the primate to the targeted region to open the tissue, transcranially acquiring acoustic emissions produced from an interaction between the one or more microbubbles and the tissue, and determining a cavitation spectrum from the acquired acoustic emissions.

Abstract: Ablation device including a probe structure 10 having a proximal end 12 and a distal end 14. Probe structure 10 includes a tubular first catheter 16, a tubular second catheter 18 surrounding the first catheter and a tubular guide catheter extending within the first catheter 16. The first catheter 16 carries a cylindrical ultrasonic transducer 20 adjacent its distal end. The transducer 20 is connected to a source of electrical excitation. The ultrasonic waves emitted by the transducer 20 are directed at the heart wall tissue. Once the tissue reaches the target temperature, the electrical excitation is turned on and off to maintain the tissue at the largest temperature. Alternatively, the transducer 20 is subjected to continuous excitation at one power level and upon the tissue reaching the target temperature, the power level of the continuous excitation is switched to a second lower power level.

Abstract: A memory device includes a field effect transistor and a variable-capacitance capacitor. A gate structure includes a gate dielectric and an intermediate electrode. The variable-capacitance capacitor includes a lower capacitor plate comprising the intermediate electrode, an upper capacitor plate comprising a control gate electrode, and a variable-capacitance node dielectric and including an electrical-field-programmable metal oxide material. The electrical-field-programmable metal oxide material provides a variable effective dielectric constant, and a data bit may be stored as a dielectric state of the variable-capacitance node dielectric in the memory device. The variable-capacitance node dielectric provides reversible electrical field-dependent resistivity modulation, or reversible electrical field-dependent movement of metal atoms therein.

Abstract: According to one embodiment, a non-volatile memory includes a plurality of groups and a memory controller configured to execute a first operation. Each of the plurality of groups includes a plurality of cell units. Each of the plurality of cell units includes a plurality of memory cells. The first operation includes: based on a first correction amount associated with a target group, reading data from the target group; and updating the first correction amount to a second correction amount based on the data. The memory controller is configured to: select a first group as the target group; and when a condition is satisfied, select a second group as the target group after performing the first operation related to the first group.

Abstract: Devices, systems, and methods for distinguishing tissue types are described herein. Such devices and systems may use dual polarization, conformal filters to acquire image data from target tissues and a processor to create an image in which the contrast between tissues has been enhanced.

Abstract: Memory devices, memory cell strings and methods of operating memory devices are shown. Configurations described include directly coupling an elongated body region to a source line. Configurations and methods shown should provide a reliable bias to a body region for memory operations such as erasing.

Abstract: Certain aspects relate to systems and techniques for luminal network navigation. Some aspects relate to incorporating respiratory frequency and/or magnitude into a navigation system to implement patient safety measures. Some aspects relate to identifying, and compensating for, motion caused by patient respiration in order to provide a more accurate identification of the position of an instrument within a luminal network.

Abstract: An ultrasound therapy device for generating ultrasound therapy. The ultrasound therapy device includes a wearable structure, ultrasound transducer units, a tightening mechanism, a memory, and a processor. The wearable structure is securable to a user to transmit the ultrasound to a target therapy area of a user including at least one of a kidney region, a lung region, and a lower limb of the user. The ultrasound transducer units are attachable and repositionable in the wearable structure to generate and deliver the ultrasound to the target region. The ultrasound transducer units are arranged in an array. The array of ultrasound transducer units is mechanically moved within the wearable structure and is in contact with a material to facilitate penetration of ultrasound into the user's body.

Abstract: Disclosed are a focused ultrasound device and a method for setting an order of focused ultrasound treatment thereof. When using an ultrasound treatment method using mechanical energy, the focused ultrasound device according to an embodiment determines a next focal point position in consideration of at least one previous focal point position of focused ultrasound and thus can minimize thermal increase of an affected area and maximally utilize the mechanical energy.

Abstract: An in-memory-computing method for a memory device includes: storing weight values in cascaded computing cells each including first and second computing memory cells, wherein the first computing memory cells are cascaded in series into a first computing memory cell string and the second computing memory cells are cascaded in series into a second computing memory cell string: receiving input values by the first and the second computing memory cell strings; performing a first logic operation on the input values and the weight values by the first computing memory cell string to generate a first logic operation result, and performing a second logic operation on the input values and the weight values by the second computing memory cell string to generate a second logic operation result: and performing a third logic operation on the first and the second logic operation results to generate an output logic operation result.

Abstract: A method of storing a data into a memory storage having bit cells. The method includes identifying each of the binary one and the binary zero in the data as either a majority bit value or a minority bit value based on the probability of finding the binary one in the data or based on the probability of finding the binary zero in the data. In the method, a bit of the data is stored into the bit cell as the more preferred state if the bit of the data has the majority bit value, and a bit of the data is stored into the bit cell as the less preferred state if the bit of the data has the minority bit value.

Abstract: A memory device includes a bit line (BL); a source line (SL); and a plurality of non-volatile memory cells operatively coupled between the BL and SL, respectively. Each of the plurality of non-volatile memory cells includes a resistor with a variable resistance, a first transistor, and a second transistor that are coupled to each other in series. In response to a first one of the non-volatile memory cell not being read and a second one of the non-volatile memory cell being read, a voltage level at a first node connected between the first and second transistors of the first non-volatile memory cell is greater than zero.

Abstract: Ultrasound-based estimation of disease activity, such as for NAS or other activity index for NAFLD for liver disease, is provided. Ultrasound measures acoustic scatter and shear wave propagation parameters, such as measuring acoustic backscatter coefficient, shear wave velocity, and shear wave damping ratio. A score for the disease activity is determined from these scatter and shear wave propagation parameters. The physician may be assisted by relatively inexpensive and rapid ultrasound as compared to biopsy or MRI based scoring in scoring activity of a disease, such as NAFLD. Ultrasound imaging is more readily available and less expensive and MRI, and is non-invasive.

Abstract: Provided is a method for estimating a pulse rate with high accuracy in the case that short-term burst noise is mixed in an estimation interval. Included are a pulse wave signal generating step of generating a pulse wave signal from an image of a pulse rate estimation target; a peak component suppression step of limiting an amplitude value of the pulse wave signal that is larger than a first threshold value to the first threshold value, and outputting a pulse wave analysis signal; and a frequency analysis step of outputting a frequency spectrum of the pulse wave analysis signal.

Abstract: A memory circuit includes an array of memory cells arranged with first word lines connected to a first sub-array storing less significant bits of data and second word lines connected to a second sub-array storing more significant bits of data. A row decoder circuit coupled to the first and second word lines generates word line signals. A word line gating circuit is configured to selectively gate passage of the word line signals to the second word lines for the second sub-array in response to assertion of a maximum value signal. A data modification circuit performs a mathematical operation on data read from the array of memory cells, and asserts the maximum value signal if the mathematical operation performed on the less significant bits of data from the first sub-array produces a maximum data value.

Abstract: A method includes setting a current level of a write signal to a first non-zero value for a first period of time. The write signal is provided to a memory element during the first period of time. The current level of the write signal is adjusted from the first non-zero value to a second non-zero value, different from the first non-zero value, for a second period of time. The write signal is provided to the memory element during the second period of time. The current level of the write signal is adjusted from the second non-zero value to a third value, different from the first non-zero value and different from the second non-zero value, for a third period of time. The write signal is provided to the memory element during the third period of time.

Abstract: A semiconductor storage device capable of achieving low power and high integration is provided. A non-volatile semiconductor memory of the disclosure includes a memory cell array. The memory cell array has a NOR array with a NOR flash memory structure and a variable resistance array with a variable resistance memory structure formed on a substrate. An entry gate is formed between the NOR array and the variable resistance array. When the NOR array is accessed, the entry gate separates the variable resistance array from the NOR array.

Abstract: A magnetic memory includes a first spin-orbital-transfer-spin-torque-transfer (SOT-STT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT-STT hybrid magnetic devices. Each of the first and second SOT-STT hybrid magnetic devices includes a first magnetic layer, as a magnetic free layer, a spacer layer disposed under the first magnetic layer, and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer. The SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.