Abstract: A memory device including a memory array and address lines; and decoder circuitry to apply a first bias to a WL coupled to a memory cell selected for a memory operation, a second bias to a BL coupled to the selected memory cell, and one or more neutral biases to the other BLs and WLs of the memory array; wherein the decoder circuitry comprises a plurality of bias circuits coupled to the address lines, a first bias circuit of the plurality of bias circuits comprising a transistor pair and an additional transistor coupled to an address line of the plurality of address lines, wherein the bias circuit is to apply, to the address line, the first bias through the transistor pair in a first state, the second bias through the transistor pair in a second state, and the neutral bias through the additional transistor in a third state.

Abstract: Provided are memory devices and memory systems. The memory device includes a memory cell array in a first semiconductor layer and including word lines stacked in a first direction, and channel structures passing through the word lines in the first direction; a control logic circuit in a second semiconductor layer located below the first semiconductor layer in the first direction; and a physical unclonable function (PUF) circuit including a plurality of through electrodes passing through the first semiconductor layer and the second semiconductor layer, and configured to generate PUF data according to resistance values of the plurality of through electrodes, and generate the PUF data based on a node voltage between through electrodes connected in series, among the plurality of through electrodes.

Abstract: Provided herein are memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.

Abstract: Systems and methods for transvaginal high intensity concentrated ultrasound. Urinary incontinence is treated through application of high intensity ultrasound to tissue structures to affect a change in the tissue.

Abstract: A vertical nonvolatile memory device including a memory cell string using a resistance change material is disclosed. Each memory cell string of the nonvolatile memory device includes a semiconductor layer extending in a first direction and having a first surface opposite a second surface, a plurality of gates and a plurality of insulators alternately arranged in the first direction and extending in a second direction perpendicular to the first direction, a gate insulating layer extending in the first direction between the plurality of gates and the semiconductor layer and between the plurality of insulators and the semiconductor layer, and a dielectric film extending in the first direction on the surface of the semiconductor layer and having a plurality of movable oxygen vacancies distributed therein.

Abstract: The present invention provides a device for treating dementia, including: a plurality of ultrasound probes; an ultrasound transducer arranged in each of the ultrasound probes and configured to propagate unfocused ultrasound energy to a brain; and an ultrasound generator connected to each of the ultrasound probes.

Abstract: A memory device includes a memory block and a peripheral circuit. The memory block includes a first word line group of word lines included in the memory block and a second word line group of the word lines included in the memory block. The word lines of the first word line group are different from the word lines of the second word line group. The peripheral circuit provides the first word line group and the second word line group with an equalizing voltage during an equalizing section overlapping an erase voltage discharging section for the memory block to constantly keep voltages of the first word line group and the second word line group to the equalizing voltage.

Abstract: Methods and systems include memory devices with a memory array comprising a plurality of memory cells. The memory devices include a control circuit operatively coupled to the memory array and configured to receive a read request for data and to apply a first voltage at a first time duration to the memory array based on the read request. The control circuit is additionally configured to count a number of the plurality of memory cells that have switched to an active read state based on the first voltage and to derive a second time duration. The control circuit is further configured to apply a second voltage at the second duration to the memory array. The control circuit is also configured to return the data based at least on bits stored in a first and a second set of the plurality of memory cells.

Abstract: Methods and systems include memory devices with a memory array comprising a plurality of memory cells. The memory devices include a control circuit operatively coupled to the memory array and configured to receive a read request for data and to apply a first voltage to the memory array based on the read request. The control circuit is additionally configured to count a total number of the plurality of memory cells that have switched to an active read state based on the first voltage and to apply a second voltage to the memory array based on the total number. The control circuit is further configured to return the data based at least on bits stored in a first and a second set of the plurality of memory cells.

Abstract: A method of controlling a device includes: obtaining information related to a body surface temperature of a person by detecting the body surface temperature of the person by a thermal camera, estimating a deep body temperature of the person on the basis of the information related to the body surface temperature of the person, detecting the person's condition on the basis of the deep body temperature of the person, and controlling an operation of the device according to the detected person's condition.

Abstract: A neuromorphic computing device includes first and second memory cell arrays, and an analog-to-digital converting circuit. The first memory cell array includes a plurality of resistive memory cells, generates a plurality of read currents based on a plurality of input signals and a plurality of data, and outputs the plurality of read currents through a plurality of bitlines or source lines. The second memory cell array includes a plurality of reference resistive memory cells and an offset resistor, and outputs a reference current through a reference bitline or a reference source line. The analog-to-digital converting circuit converts the plurality of read currents into a plurality of digital signals based on the reference current. The offset resistor is connected between the reference bitline and the reference source line.

Abstract: Disclosure are a triboelectric generator including a nano-composite life-limited via selective ultrasound application thereto, and a neurostimulation therapy device using the same. Disclosure are a life-limited nano-composite that initiates biodegradation thereof upon application of focused ultrasound thereto, and to a neurostimulation therapy device for peripheral neuropathy treatment using an ultrasound-driven triboelectric generator based on the life-limited nano-composite. The device has a power source that is harmless to a human body and performs nerve stimulation treatment using this power source, and then causes biodegradation at a desired timing after the treatment is completed.

Abstract: Apparatus and methods are described including an endoluminal device configured to move along a portion of a lumen of a subject's body, an extraluminal imaging device, and at least one computer processor. While the endoluminal device moves along the portion of the lumen, a display displays an extraluminal image of the lumen in which a first indication of a location of the lumen is shown. The extraluminal imaging device acquires a sequence of extraluminal images of the endoluminal device moving along the portion of the lumen. The indication of the location of the lumen that is displayed is updated based upon the acquired sequence of extraluminal images, and the acquired sequence of images is displayed with the updated indication of the location of the lumen overlaid upon the images. Other applications are also described.

Abstract: Device for shave-free trans-cranial focused ultrasound (FUS) treatment and method for using same, the device including a scalp cover having a first inlet configured to allow supply of a gas into the scalp cover, and an outlet configured to allow outflow of ambient air contained within the scalp cover when the gas is being supplied, such that the ambient air contained within the scalp cover is replaced by the supplied gas.

Abstract: A memory device and a word line driver thereof are provided. The word line driver includes a first word line signal generator, a second word line signal generator, a first voltage generator, and a second voltage generator. The first word line signal generator selects one of a first voltage and a second voltage to generate a first word line signal according a control signal. The second word line signal generator selects one of a third voltage and a fourth voltage to generate a second word line signal according the control signal. The first voltage generator provides the second voltage, and the second voltage generator provides the fourth voltage, where the first voltage generator is independent to the second voltage generator.

Abstract: Methods for providing MRI-derived strain measurements are described. Some methods include calculating a first set of strain measurements for each of a plurality of different segments of a heart over an entire single cardiac cycle from obtained MRI image data. Then, for each segment of the plurality of different segments, electronically identifying a peak train value and associated time point of the cardiac cycle in the first set of strain measurements; and electronically adjusting the first set of strain measurements at each time point of the cardiac cycle using the identified peak strain value as a reference peak strain value to thereby provide strain measurements that are adjusted relative to a defined time during the cardiac cycle irrespective of when signal acquisition of the obtained MRI image data was initiated during the cardiac cycle. Risk scores, contouring review, contraction pattern on a 3-D cardiac model are also disclosed.

Abstract: Disclosed are methods of producing ultrasound waves for providing sonodynamic therapy. The method includes coupling a sonodynamic therapy device with an array of piezoelectric transducer elements to a skin surface. A controller is configured to generate an electrical drive signal to produce ultrasound waves to activate a sonosensitizer in a treatment region without damaging healthy cells in the treatment region.

Abstract: The invention relates to an auxiliary instrument for insertion into vessels or lumens with small inner diameters. The auxiliary instrument has a proximal end and a distal end and has at least one localization element whose position and orientation can be determined with an electromagnetic position detection system. The localization element is located directly adjacent to or at least close to the distal end of the auxiliary instrument and is configured to capture an alternating electromagnetic field. A distal end region of the auxiliary instrument extends from the distal end of the auxiliary instrument to a proximal end of the localization element such that the localization element is located within the distal end region. In that part of the distal end region in which the localization element is located, the auxiliary instrument has a low bending stiffness of less than 10 Nmm2, at least in sections.

Abstract: A sense amplifier includes a first switch unit, a second switch unit, and an amplifier-latch module. A first port of the amplifier-latch module is electrically connected, via the first switch unit, to a bit line connected with a storage unit, and a second port of the amplifier-latch module is electrically connected to a reference voltage signal via the second switch unit. The amplifier-latch module is configured to amplify a signal in a sensing amplification phase. The first switch unit is configured to transmit a voltage on the bit line to the first port before the sensing amplification phase. The second switch unit is configured to transmit the reference voltage signal to the second port before the sensing amplification phase, and disconnect an electrical connection between the reference voltage signal and the second port in the sensing amplification phase.

Abstract: A memory device includes a field effect transistor and a variable-capacitance capacitor. A gate structure includes a gate dielectric and an intermediate electrode. The variable-capacitance capacitor includes a lower capacitor plate comprising the intermediate electrode, an upper capacitor plate comprising a control gate electrode, and a variable-capacitance node dielectric and including an electrical-field-programmable metal oxide material. The electrical-field-programmable metal oxide material provides a variable effective dielectric constant, and a data bit may be stored as a dielectric state of the variable-capacitance node dielectric in the memory device. The variable-capacitance node dielectric provides reversible electrical field-dependent resistivity modulation, or reversible electrical field-dependent movement of metal atoms therein.