Abstract: A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register supporting a plurality of operational modes.

Abstract: A semiconductor memory device includes a first memory cell having a first end connected to a first wiring and a second end connected to a second wiring and a second memory cell having a first end connected to the first wiring and a second end connected to a third wiring. A sense amplifier is configured to: sense a first current flowing in the first wiring when a first voltage is applied to the second and third wirings and a second voltage, larger than the first voltage, is applied to the first wiring; and sense a second current flowing in the first wiring when a third voltage larger than the second voltage is applied to the first wiring, the first voltage to the second wiring, and the second voltage to the third wiring. The sense amplifier reads data according to a difference between the first current and the second current.

Abstract: A memory device includes a static random-access memory (“SRAM”) circuit and a first nonvolatile memory (“NVM”) string, a second NVM string, a first and a second drain select gates (“DSGs”). The SRAM circuit is able to temporarily store information in response to bit line (“BL”) information which is coupled to at the input terminal of the SRAM circuit. The first NVM string having at least one nonvolatile memory cell is coupled to the output terminal of the SRAM. The first DSG is operable to control the timing for storing information at the output terminal of the SRAM to the first nonvolatile memory. The second NVM string having at least one nonvolatile memory cell is coupled to the output terminal of the SRAM. The second DSG controls the timing for storing information at the output terminal of the SRAM to the second nonvolatile memory string.

Abstract: Various embodiments, described herein, provide methods and systems for the treatment of plantar fascia. In some embodiments, a method of non-invasive treatment of plantar fasciacan include the steps of identifying a damage location comprising a planter fascia; directing a conformal distribution of ultrasound energy to the plantar fascia at the damage location; creating a plurality of micro lesions in the plantar fascia at the damage location; initiating healing of a plurality of micro tears in the plantar fascia at the damage location; and sparing intervening tissue between the plantar fascia and a surface of a sole of a foot.

Abstract: An apparatus and method for modifying collagen containing dermal tissue. The apparatus includes a source of ultrasound energy comprised of a plurality of curvilinear ultrasound transducers shaped to direct ultrasound energy to selected skin depths. The transducers have variable curvature, drive frequency, power level and geometries to effect precise control of collagen modification.

Abstract: The invention provides a system (100) for acquiring cervical images which comprises an image acquisition subsystem (120) for acquiring cervical images (122) of a cervical region of a patient during a colposcopy procedure, and a display subsystem (160) for displaying the cervical images on a display (060) by providing image data (162) of the cervical images to the display. According to the invention, the image acquisition subsystem (120) is arranged for, when operating in an interval mode, acquiring the cervical images (122) at predetermined time intervals to obtain a time-series of cervical images showing changes in the cervical region over time, and reporting a progress of said acquiring to the display subsystem. Moreover, the display subsystem (160) is arranged for establishing a progress indicator (400-416) on the display by generating indicator data (164) and providing the indicator data to the display (060), the progress indicator providing visual feedback on the progress of said acquiring to a user.

Abstract: A semiconductor memory device includes a memory cell, a bit line connected to the memory cell, and a sense amplifier. The sense amplifier is connected to the bit line, receives a first control signal, and detects and amplifies a bit line signal of the bit line. The sense amplifier includes a precharge device that is turned on or turned off based on a read control signal, and a transistor output unit that outputs an output voltage based on the bit line signal when the precharge device is turned off.

Abstract: The present disclosure includes apparatuses and methods related to refresh in memory. An example apparatus can refresh a memory cell of an array of memory cells in response to the array of memory cells being accessed a threshold number of accesses.

Abstract: A program method of a memory device include determining whether valid data is stored in memory cells of a word line adjacent to a selection word line upon which a program operation is to be performed; when the valid data is not stored in the memory cells of the word line adjacent to the selection word line, performing, based on data to be written to the selection word line, a pre-program operation on the word line adjacent to the selection word line; and after the performing of the pre-program operation, performing, based on a program command, the program operation on the selection word line.

Abstract: A semiconductor device that has a normal mode of operation and a test mode of operation and can include: a first circuit that generates at least one assist signal having an assist enable logic level in the normal mode of operation, the at least one assist signal alters a read operation or a write operation to a static random access memory (SRAM) cell of the semiconductor device as compared to read or write operations when the assist signal has an assist disable logic level; and the first circuit generates the at least one assist signal having the assist disable logic level in the test mode of operation.

Abstract: A memory card is provided to include a substrate having two pairs of edges facing each other, a plurality of first row terminals that are arranged adjacent to an edge at an insertion side of the substrate and include a first voltage power terminal for applying a first voltage and a first ground terminal, a plurality of second row terminals that are spaced farther apart from the edge at the insertion side than the plurality of first row terminals and include a second voltage power terminal for applying a second voltage and first data terminals, and a plurality of third row terminals that are spaced farther apart from the edge at the insertion side than the plurality of second row terminals and include second data terminals.

Abstract: The present disclosure includes apparatuses and methods related to performing logical operations using sensing circuitry. An example apparatus comprises an array of memory cells and sensing circuitry coupled to the array. The sensing circuitry is configured to perform a logical operation using a data value stored in a first memory cell coupled to a sense line as a first input and a data value stored in a second memory cell coupled to the sense line as a second input. The sensing circuitry is configured to perform the logical operation without transferring data via a sense line address access.

Abstract: Methods of programming and sensing in a memory device including connecting first and second data lines in series before programming or sensing, respectively.

Abstract: Apparatuses and methods are provided for scalable memory. An example apparatus comprises a logic component, a plurality of memory components adjacent to and coupled to one another and the logic component, a plurality of memory component programmable delay lines (PDLs), of the plurality of memory component PDLs associated with a respective one of the plurality of memory components, and a logic component programmable delay line (LPDL) coupled to the logic component and each of the plurality of memory component PDLs.

Abstract: This disclosure provides systems and methods for non-invasive treatment to a region of interest with improved efficiency. The systems and methods can include a treatment device having an energy source and a rolling member. The rolling member can include a wall disposed between the energy source and the region of interest. Treatment can be provided at a first location, followed by moving the treatment device, then energy transmission can be terminated if coupling between the energy source and the region of interest is interrupted or treatment can be provided at a second location if the coupling between the energy source and the region of interest is uninterrupted.

Abstract: An object information acquiring apparatus is used, which includes: a receiver configured to receive a photoacoustic wave generated from an object irradiated with light and output a time-series electric signal; and a processor configured to acquire characteristic information relating to an inside of the object by using the time-series electric signal, wherein the light is emitted at a plurality of timings, the receiver receives the photoacoustic wave at the plurality of timings, and the processor determines a projection position coordinate on which the time-series electric signal is projected on the basis of an amount of displacement of the inside of the object among the plurality of timings, for each of a plurality of time-series electric signals corresponding to the plurality of timings, and acquires the characteristic information.

Abstract: A semiconductor memory device includes a memory cell array, a peripheral circuit and a control logic. The memory cell array includes a plurality of memory cells each of which stores 2 or more bits of data. The peripheral circuit is configured to perform a program operation for the memory cells in the memory cell array. The control logic is configured to control the peripheral circuit and the memory cell array such that, during a program operation for target memory cells to be programmed among the memory cells, a preprogram for memory cells to be programmed to the highest program state is performed based on a predetermined value, and after the preprogram has been performed, a main program for the target memory cells to be programmed is performed.

Abstract: The invention relates to a power semiconductor device with a substrate and an electrically conductive DC voltage bus bar system and a capacitor connected to the bus bar system, wherein the power semiconductor device has, for securing the capacitor, a capacitor securing apparatus comprising a receptacle device for receiving the capacitor, in which at least part of the capacitor is arranged. Electrically conductive bus bar system terminal elements are electrically connected thereto and run in the direction of the substrate. An elastic first deformation element is materially bonded to the capacitor securing apparatus and is formed from an elastomer is arranged on the side of the capacitor securing apparatus facing the DC voltage bus bar system.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.

Abstract: Ultrasound system and method configured to locally determine a parameter of nonlinear tissue elasticity by monitoring shear wave propagating through the tissue. The shear wave is caused by an acoustic radiation force (ARF) which is applied to the tissue by ultrasound irradiation locally, in a focal region of the ultrasound beam and which is a function of the intensity of ultrasound irradiation, its time rate, and the featured nonlinearity parameter. The irradiation does not involve a quasi-static compression of the tissue, thereby permitting local estimation of nonlinear tissue elasticity and circumventing the need to solve the global inverse problem.