Abstract: The present application relates to contact immersion lithography systems and methods of their use. An example immersion lithography system includes a photomask substrate and at least one sensor disposed along a surface of the photomask substrate. The immersion lithography system also includes a controller having at least one processor and a memory. The at least one processor is configured to execute program instructions stored in the memory so as to carry out operations. The operations include receiving, from the at least one sensor, information indicative of an electric field proximate to the at least one sensor. The operations also include determining, based on the received information, at least one of: a thickness of a liquid layer adjacent to the photomask substrate or a distance to a further substrate adjacent to the photomask substrate.

Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.

Abstract: Implementations described herein relate to a platform apparatus for post exposure processing. In one implementation, a platform apparatus includes a plumbing module and a process module. The process module further includes a central region having a robot disposed therein, and a plurality of process stations disposed about the central region and sharing the plumbing module. Each process station includes a process chamber and a post process chamber in a stacked arrangement. The process chamber includes a chamber body defining a process volume, a door coupled to the chamber body, a first electrode coupled to the door, and a power source communicatively coupled to the first electrode.

Abstract: A manufacturing system for fabricating self-aligned grating elements with a variable refractive index includes a patterning system, a deposition system, and an etching system. The manufacturing system performs a lithographic patterning of one or more photoresists to create a stack over a substrate. The manufacturing system performs a conformal deposition of a protective coating on the stack. The manufacturing system performs a deposition of a first photoresist of a first refractive index on the protective coating. The manufacturing system performs a removal of the first photoresist to achieve a threshold value of first thickness. The manufacturing system performs a deposition of a second photoresist of a second refractive index on the first photoresist. The second refractive index is greater than the first refractive index. The manufacturing system performs a removal of the second photoresist to achieve a threshold value of second thickness to form a portion of an optical grating.

Abstract: A high resolution inspection apparatus using a terahertz Bessel beam. The high resolution inspection apparatus comprises a terahertz wave generating unit for generating a terahertz wave; a Bessel beam forming unit for generating a terahertz Bessel beam using the terahertz wave incident from the terahertz wave generating unit; a ring beam forming unit for forming a ring beam using the terahertz Bessel beam and concentrating the formed ring beam to an inspection target object; a scattered light detecting unit for detecting scattered light generated from the inspection target object; and a ring beam detecting unit for detecting a ring beam transmitted through the inspection target object.

Abstract: A lithography apparatus includes a formation unit that forms an alignment mark on a substrate by irradiating the substrate that includes a photosensitizer with light, and a transfer unit that aligns the substrate on the basis of the position of the alignment mark and that transfers a pattern to the substrate by illuminating the photosensitizer with exposure light. The formation unit irradiates a material of a grounding of the photosensitizer with irradiation light at a wavelength that differs from that of the exposure light and forms the alignment mark on the material by processing the material with energy of the irradiation light.

Abstract: The present invention relates to a method for transforming measurement data of a photolithographic mask for the extreme ultraviolet (EUV) wavelength range from first surroundings into second surroundings. The method includes the steps of: (a) determining the measurement data for the photolithographic mask in the first surroundings, wherein the measurement data are influenced by the effects of internal stresses on the photolithographic mask; (b) ascertaining at least one change in the measurement data during the transition from the first surroundings into the second surroundings, in which change the effects of the internal stresses on the photolithographic mask are at least partly compensated; and (c) correcting the measurement data determined in step (a) with the at least one change in the measurement data ascertained in step (b).

Abstract: A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.

Abstract: Methods of and apparatus for inspecting composite layers of a first material formed on a second material are provided including providing an illumination source, illuminating at least a portion of the composite at the layer, receiving light reflected from the sample, determining a spectral response from the received light, and comparing the received spectral response to an expected spectral response.

Abstract: The present invention provides an imprint apparatus that forms a pattern of an imprint material on a substrate using a mold, the apparatus including a first detection unit configured to detect a surface structure in a wafer edge region of the substrate, a specifying unit configured to specify, from the surface structure detected by the first detection unit, an effective region in which the pattern of the imprint material is formed, and a first determining unit configured to determine, based on the effective region specified by the specifying unit, a shape of a peripheral shot region whose area is smaller than an area of a pattern region of the mold, and a second determining unit configured to determine based on the shape determined by the first determining unit, a supply position of the imprint material in the peripheral shot region.

Abstract: A metrology tool, an aplanatic singlet lens, and a method of designing an aplanatic singlet lens are provided. The metrology tool is for determining a characteristic of a structure on a substrate. The metrology tool comprises an optical detection system for detecting radiation over a wavelength range. The optical detection system comprises an aplanatic singlet lens for focusing the radiation on to a detector. The aplanatic singlet lens has a n aplanatic wavelength which is within the wavelength range.

Abstract: An immersion lithographic apparatus having a fluid handling structure, the fluid handling structure configured to confine immersion fluid to a region and including: a meniscus controlling feature having an extractor exit on a surface of the fluid handling structure; and a gas knife system outwards of the extractor exit and including passages each having an exit, the passages having a plurality of first passages having a plurality of corresponding first exits on the surface, and a plurality of second passages having a plurality of corresponding second exits outwards of the first exits on the surface, wherein the surface faces and is substantially parallel to a top surface of a substrate during exposure, and the first exits and the second exits are arranged at a greater distance from the substrate than the extractor exit.

Abstract: According to one embodiment, there is provided a semiconductor device manufacturing system, including a storage unit, a specifying unit, a determination unit and an adjustment unit. The storage unit stores device information indicating a relationship between image formation performance of an exposure device used for manufacturing a semiconductor device and mechanical operation accuracy. The specifying unit specifies a constraint of the mechanical operation accuracy according to the device information and the required image formation performance. The determination unit determines whether or not a correction parameter of an exposure condition satisfies the constraint. The adjustment unit adjusts the correction parameter according to a determination result of the determination unit.

Abstract: A metrology system may include a characterization tool configured to generate metrology data for a sample based on the interaction of an illumination beam with the sample, and may also include one or more adjustable measurement parameters to control the generation of metrology data. The metrology system may include one or more processors that may receive design data associated with a plurality of regions of interest for measurement, select individualized measurement parameters of the characterization tool for the plurality of regions of interest, and direct the characterization tool to characterize the plurality of regions of interest based on the individualized measurement parameters.

Abstract: A masking process and a mask set. The masking process includes: aligning a first mask with a stage carrying a substrate to be patterned; forming a first layer structure and a first overlay correction pattern on the substrate to be patterned by using the first mask; correcting with an image sensor and the first overlay correction pattern; aligning a second mask with the stage; forming a second layer structure and a second overlay correction pattern on the substrate to be patterned by using the second mask; and correcting with the image sensor and the second overlay correction pattern.

Abstract: A frame cure apparatus includes a position actuator and a controller. The position actuator is attached to a digital spatial modulator (DSM) having a plurality of spatial elements with a pitch, and configured to move the DSM with a step size less than the pixel pitch to provide a pattern for curing a photo-curable material in a desired curing region on a substrate. The controller moves the DSM with the step size in a predefined sequence that covers a first curing region and a second curing region such that a first curing dose accumulated at the first curing region exceeds a curing threshold while a second curing dose accumulated at the second curing region does not exceed the curing threshold. The predefined sequence provides the set of curing patterns. The first curing region matches the desired region. The second curing region does not match the desired curing region.

Abstract: An optical diffraction component is configured to suppress at least one target wavelength by destructive interference. The optical diffraction component includes at least three diffraction structure levels that are assignable to at least two diffraction structure groups. A first of the diffraction structure groups is configured to suppress a first target wavelength ?1. A second of the diffraction structure groups is configured to suppress a second target wavelength ?2, where (?1??2)2/(?1+?2)2<20%. A topography of the diffraction structure levels can be described as a superimposition of two binary diffraction structure groups. Boundary regions between adjacent surface sections of each of the binary diffraction structure groups have a linear course and are superimposed on one another at most along sections of the linear course.

Abstract: In an alignment apparatus, a measurement device includes an illuminator that illuminates a first original-side mark and a second original-side mark arranged in an original and a first substrate-side mark and second substrate-side mark arranged in a substrate. The measurement device performs coarse measurement based on light beams from the first original-side mark and the first substrate-side mark by causing the illuminator to illuminate the first original-side mark and the first substrate-side mark under a first condition, and performs fine measurement based on light beams from the second original-side mark and the second substrate-side mark by causing the illuminator to illuminate the second original-side mark and the second substrate-side mark under a second condition.

Abstract: A control system, of a plurality of heads, acquires grating correction information related to at least two of scales in a first grating group and scales in a second grating group, based on position information of a movable body measured using at least four heads irradiating measurement beams on at least two of the scales and scales. The grating correction information is used to control movement of the movable body using at least three heads irradiating at least two of the scales and scales.

Abstract: A mirror for a microlithographic projection exposure apparatus, and a method for operating a deformable mirror. In one aspect, a mirror includes an optical effective surface (11), a mirror substrate (12), a reflection layer stack (21) for reflecting electromagnetic radiation incident on the optical effective surface, and at least one piezoelectric layer (16) arranged between the mirror substrate and the reflection layer stack and to which an electric field for producing a locally variable deformation is able to be applied by a first electrode arrangement situated on the side of the piezoelectric layer (16) facing the reflection layer stack, and by a second electrode arrangement situated on the side of the piezoelectric layer facing the mirror substrate. The piezoelectric layer has a plurality of columns spatially separated from one another by column boundaries, wherein a mean column diameter of the columns is in the range of 0.1 ?m to 50 ?m.