Abstract: A method of optimizing a lithographic process for semiconductor fabrication includes determining that a semiconductor wafer experienced a photoresist exposure delay. At least one operating parameter of a post exposure baking process is adjusted based on the semiconductor wafer having experienced the photoresist exposure delay. The post exposure baking process is performed on the semiconductor wafer utilizing the adjusted at least one operating parameter.

Abstract: A measurement system to be used in a manufacturing line for micro-devices is provided independently from an exposure apparatus. The measurement system has measurement devices that each performs measurement processing on substrates (e.g., substrates that have gone through at least one processing but before being coated with a sensitive agent), and a carrying system for performing delivery of substrates to/from the measurement devices. The measurement devices include a first measurement device that acquires position information on a plurality of marks formed on a substrate under a setting of a first condition, and a second measurement device that acquires position information on a plurality of marks formed on another substrate (e.g., another substrate included in the same lot as the substrate on which acquiring position information is performed under the setting of the first condition in the first measurement device) under a setting of a first condition.

Abstract: A mount includes: A. a mount body including a holding unit that detachably holds a target generation device configured to output a target substance for extreme ultraviolet light generation as a droplet into a chamber; and B. a target position adjustment unit that is provided to the holding unit and configured to adjust a position of the target generation device relative to the chamber; and C. a movement mechanism that moves the mount body at least in a horizontal direction. The target position adjustment unit is a stage configured to move the target generation device in two directions orthogonal to a droplet emission axis.

Abstract: In an optical system for a projection exposure apparatus, the angle space of the illumination radiation of the projection optical unit at the reticle is twice as large in a first direction as the angle space of the illuminating radiation of the illuminating optical unit.

Abstract: Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.

Abstract: Methods and systems for estimating values of parameters of interest from optical measurements of a sample early in a production flow based on a multidimensional optical dispersion (MDOD) model are presented herein. An MDOD model describes optical dispersion of materials comprising a structure under measurement in terms of parameters external to a base optical dispersion model. In some examples, a power law model describes the physical relationship between the external parameters and a parameter of the base optical dispersion model. In some embodiments, one or more external parameters are treated as unknown values that are resolved based on spectral measurement data. In some embodiments, one or more external parameters are treated as known values, and values of base optical dispersion model parameters, one or more external parameters having unknown values, or both, are resolved based on spectral measurement data and the known values of the one or more external parameters.

Abstract: A mirror assembly, a control method thereof and a light adjusting board are provided. The mirror assembly includes a mirror, a first rotation electrode, a second rotation electrode, a first electrode, a second electrode, a third electrode and a fourth electrode. The mirror includes a rotation axis; the first rotation electrode and the second rotation electrode are respectively at two sides of the rotation axis; the first electrode and the second electrode are opposite to form a first electric field; the first rotation electrode is between the first electrode and the second electrode; the third electrode and the fourth electrode are opposite to form a second electric field; the second rotation electrode is between the third electrode and the fourth electrode; the first rotation electrode and the second rotation electrode rotate under the two electric fields to drive the mirror to rotate around the rotation axis.

Abstract: There may be provided a method for determining three dimensional (3D) defect information, the method may include performing a two-dimensional (2D) inspection of an area of a wafer to generate 2D defect information related to defects of the area of the wafer; estimating 3D defect information regarding the defects of the area of the wafer, wherein the estimating is based on the 2D defect information related to defects of the area of the wafer, and a mapping between 2D defect information and 3D defect information, wherein the mapping is generated using a supervised deep learning machine process.

Abstract: A projection exposure apparatus for semiconductor lithography includes a component and fixed to a structural part of the apparatus. The component and/or the structural part have/has a stop for bearing against a reference surface at the structural part and/or the component. The stop is movable relative to the component fixed and/or the structural part so that it can be moved away from the reference surface. A method for adjusting a component on a structural part of a projection exposure apparatus includes: securing a stop to the component or the structural part; positioning the component so that the stop comes into mechanical contact with a reference surface at the component or the structural part; fixing the component to the structural part; and moving the stop away from the reference surface.

Abstract: The present invention discloses a digital photolithography method for a fiber optic device (FOD) based on a DMD combination. In this method, reflected light modulated by two DMDs is simultaneously projected onto a same position on an optical fiber end surface through one reduction projection lens. The two DMDs form a primary and secondary digital mask for joint control of an exposure dose distribution formed when patterns are shrunk and projected onto the optical fiber end surface. After the optical fiber end surface coated with photoresist is subject to this dose of exposure, developing, fixing, and etching are conducted, to form a micro-optic device on the optical fiber end surface. In the present invention, distribution of the exposure dose jointly modulated by a digital mask combination formed by the primary and secondary DMD exceeds an order of modulation of an exposure dose by a single DMD.

Abstract: An imprint apparatus forms a pattern on a substrate by curing an imprint material on the substrate while the imprint material is in contact with a mold. The imprint apparatus includes a substrate chuck having a substrate holding region for holding the substrate, a peripheral member arranged to surround the side surface of the substrate held by the substrate chuck, and a control unit configured to control a cleaning process for cleaning at least a partial region of the peripheral member by using a cleaning member including a charging unit. The cleaning process includes an operation for attracting a particle in the partial region to the charging unit by moving the cleaning member relative to the peripheral member while the charging unit faces at least the partial region of the peripheral member.

Abstract: An optical element for an optical system, in particular an optical system of a microlithographic projection exposure apparatus or mask inspection apparatus, and a method for correcting the wavefront effect of an optical element. The optical element has at least one correction layer (12, 22) and a manipulator that manipulates the layer stress in this correction layer such that a wavefront aberration present in the optical system is at least partially corrected by this manipulation. The manipulator has a radiation source for spatially resolved irradiation of the correction layer with electromagnetic radiation (5). This spatially resolved irradiation enables a plurality of spaced apart regions (12a, 12b, 12c, . . . ; 22a, 22b, 22c, . . . ) to be generated, equally modified in terms of their respective structures, in the correction layer.

Abstract: A method of evaluating a focus control of an extreme ultraviolet (EUV) lithography apparatus includes preparing a wafer exposed by using the EUV lithography apparatus. The wafer includes test patterns formed of a photoresist and having circular islands or holes prepared by multiple exposures of EUV at different foci of exposure. The method further includes measuring a roughness parameter of the test patterns and estimating a function representing a dependence of the roughness parameter on the focus. A best focus is estimated based on an extremum of the function. Exposure wafers are then exposed to EUV with the best focus. The exposure wafers include the test patterns. The roughness parameter for the test patterns on the exposure wafers obtained by exposing the exposure wafers at the best focus is periodically measured. An abnormality in focus is then determined based on the measured roughness parameter and the function.

Abstract: An immersion lithographic apparatus has adaptations to prevent or reduce bubble formation in one or more gaps in the substrate table by preventing bubbles escaping from the gap into the beam path and/or extracting bubbles that may form in the gap.

Abstract: A method of predicting the dominant failure mode and/or the failure rate of a plurality of features formed on a substrate, and an associated inspection apparatus. The method may include determining a placement metric for each feature, the placement metric including a measure of whether the feature is in an expected position, and comparing a distribution of the placement metric to a reference (e.g., Gaussian) distribution. The placement metric may include a boundary metric for a plurality of boundary points on a boundary defining each feature, the boundary metric including a measure of whether a boundary point is in an expected position. The dominant failure mode and/or the failure rate of the plurality of features is predicted from the comparison.

Abstract: An extreme ultraviolet exposure system includes an exposure chamber having an internal space, upper and lower electrostatic chucks, a power supply, a light source, and a mask. The upper electrostatic chuck includes first and second electrodes that are adjacent to one another and that generate an electric field of different polarities, respectively, to provide an electrostatic force. The mask is attachable to the lower surface of the upper electrostatic chuck by the electrostatic force. The mask has a metal thin film pattern including a first region in which a metal thin film that shields the electric field, and a second region in which the metal thin film is not disposed and through which the electric field is transmitted. When the mask is attached, the electric field transmitted through the second region applies an attractive force or a repulsive force to charged particles in the exposure chamber.

Abstract: Embodiments described herein provide a lithographic system having two or more lithographic tools connected to a radiation source using two or more variable attenuation units. In some embodiments, the variable attenuation unit reflects a portion of the received light beam to the lithographic tool attached thereto and transmits a remaining portion of the received light beam to the lithographic tools downstream. In some embodiments, the radiation source includes two or more laser sources to provide laser beams with an enhanced power level and which can prevent operation interruption due to laser source maintenances and repair.

Abstract: A droplet collection bucket includes a droplet collection tube, a level sensor positioned on the droplet collection tube, a gate valve configured to close a rear portion of the droplet collection tube, a gas supply configured to supply a gas into the rear portion of the droplet collection tube, a heating element wrapping around the droplet collection tube, and a drain tube connecting an interior of the droplet collection tube with an outside of the droplet collection tube.

Abstract: A method for quantifying the effect of pupil function variations on a lithographic effect within a lithographic apparatus is disclosed. The method comprises: determining a discrete, two-dimensional sensitivity map in a pupil plane of the lithographic apparatus, wherein the lithographic effect is given by the inner product of said sensitivity map with a discrete, two-dimensional pupil function variation map of a radiation beam in the pupil plane. The pupil plane of a lithographic apparatus generally refers to the exit pupil of a projection system of the lithographic apparatus. Pupil function variations may comprise: relative phase variations within the pupil plane and/or relative intensity variations within the pupil plane.

Abstract: A method for detecting defects in a thinned die, the method may include inspecting the thinned die with a two-dimensional inspection module, to find suspected defects that appear as non-reflecting regions that fulfill a size condition; measuring, using a depth measurement module, a depth of the suspected defects; and defining a suspected defects as a defects when the depth parameter exceeds a depth threshold.