Abstract: In a field effect transistor, trench lower layers are disposed directly below corresponding trenches. Deep layers of p-type extend along a first direction intersecting the trenches and are arranged at intervals along a second direction orthogonal to the first direction. A drain-side layer of n-type is distributed from a position in contact with a lower surface of a body layer to a position below a lower end of each of the deep layers through intervals between the deep layers. The drain-side layer includes a high concentration layer distributed in at least a part of a depth range in which both the deep layers and the trench lower layers are present, and an intermediate concentration layer distributed in at least a part of a depth range between a lower end of the high concentration layer and a lower end of each of the deep layers.

Abstract: A microelectronic device includes a hybrid component. The microelectronic device has a substrate including silicon semiconductor material. The hybrid component includes a silicon portion in the silicon, and a wide bandgap (WBG) structure on the silicon. The WBG structure includes a WBG semiconductor material having a bandgap energy greater than a bandgap energy of the silicon. The hybrid component has a first current terminal on the silicon, and a second current terminal on the WBG structure. The microelectronic device may be formed by forming the silicon portion of the hybrid component in the silicon, and subsequently forming the WBG structure in a silicon recess on the silicon.

Abstract: The present invention discloses an equivalent source and drain region optimized field-effect transistor device for solving the problem of short-channel effects of a field-effect transistor in the prior art. The field-effect transistor device includes an active layer, and the active layer includes a source region, a drain region and a channel region located between the source region and the drain region; when the device is on, an effective channel and an equivalent source region and an equivalent drain region away from the effective channel at least in the thickness direction of the channel region are formed in the channel region, and the field-effect transistor device communicates the source region and the drain region via the effective channel and the equivalent source region and the equivalent drain region to contribute a working current, wherein the length of the equivalent source region is greater than that of the equivalent drain region.

Abstract: Methods, a display system and projection screen are described. The projection screen includes a substrate supporting a plurality of pixels. Each pixel has a sensitizing part communicating with at least one light source, the sensitizing part being configured to detect a presence of a non-visible medium indicative of a part of an image, and to activate the at least one light source to emit light. The pixels having a first electrode and a second electrode configured to supply electricity to the sensitizing part and the light source.

Abstract: A semiconductor element includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first intermediate layer, a second intermediate layer, a source electrode, a drain electrode, and a gate electrode. The band gap of the second semiconductor layer is larger than the band gaps of the first semiconductor layer and the third semiconductor layer. The band gaps of the first intermediate layer and the second intermediate layer that sandwich the second semiconductor layer are larger than the band gap of the second semiconductor layer.

Abstract: A method of fabricating a power semiconductor device includes forming a bi layer mask on a semiconductor substrate, where the bilayer mask comprises a first dielectric layer on the semiconductor substrate and a second dielectric layer on the first dielectric layer. The first and second dielectric layers are through-etched to define an exposed portion of the semiconductor substrate. The first dielectric layer is selectively etched to form an undercut region of the bi layer mask. A crystalline semiconductor material is epitaxially grown on the exposed portion of the semiconductor substrate, and a polycrystalline semiconductor material is deposited on the second dielectric layer of the bilayer mask. After the epitaxial growth, the bilayer mask and the polycrystalline semiconductor material are removed from the semiconductor substrate, leaving behind a mesa comprising the crystalline semiconductor material on the semiconductor substrate.

Abstract: Methods provided herein may include illuminating a region on a wafer within a semiconductor processing tool, the wafer having a layer of a material that is at least semi-transparent to light and has a measurable extinction coefficient, and the region being a first fraction of the wafer's surface, detecting light reflected off the material and off a surface underneath the material using one or more detectors and generating optical data corresponding to the detected light, generating a metric associated with a property of the material on the wafer by applying the optical data to a transfer function that relates the optical data to the metric associated with the property of the material on the wafer, determining an adjustment to one or more processing parameters for a processing module, and performing or modifying a processing operation in the processing module according to the adjusted one or more processing parameters.

Abstract: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a substrate, a channel layer on the substrate, a first barrier layer on the channel layer, a second barrier layer on the first barrier layer, and a gate element on the second barrier layer. The first barrier layer includes a first material with a first band gap, the second barrier layer includes a second material with a second band gap, and the first band gap is greater than the second band gap.

Abstract: Placement of a field plate in a field-effect transistor is optimized by using multiple dielectric layers such that a first end of field plate is separated from a channel region of the transistor by a first set of one or more distinct dielectric material layers. A second end of the field plate overlies the channel region and a control electrode from which it is separated by the first set of dielectric layers and one or more additional dielectric layers.

Abstract: A method includes: forming an opening in a mask layer; measuring a feature size associated with a dimension of the opening; based on the feature size, determining a fabrication parameter; and forming a second layer in the opening. Forming the second layer is based on the fabrication parameter. A fabrication system includes a lithography system; a measurement system; a physical vapor deposition system; an oxidation system; and a control system. The control system is configured to control a feed-forward fabrication process.

Abstract: A semiconductor memory device includes: wiring layers; a semiconductor column opposed to the wiring layers; a gate insulating film disposed between the wiring layers and the semiconductor column; and an insulating member in contact with the gate insulating film. A first wiring layer includes: a first wiring disposed on a gate insulating film side with respect to the insulating member; a second wiring disposed on a side opposite the first wiring; and a metal oxide film covering surfaces on one side and the other side in the stacking direction and not covering a contact surface with the insulating member of the second wiring. The second wiring includes a first conductive layer and a second conductive layer spaced apart in the stacking direction, and a first conductive portion connected to the first conductive layer and the second conductive layer. The first conductive portion includes the contact surface with the insulating member.

Abstract: The present disclosure discloses a GaN power device having a structure improved to have an improved current density. The GaN power device includes a GaN layer, a first electrode and a second electrode formed on the GaN layer in a way to have a separation area therebetween, an AlGaN layer formed on the GaN layer of the separation area, a gate electrode formed over the AlGaN layer in a way to be separated from the first electrode and the second electrode, and a 2DEG layer formed at an interface of the AlGaN layer and the GaN layer in an area between the gate electrode and the second electrode.

Abstract: An electronic device and a manufacturing method are provided. The electronic device includes a first semiconductor chip, a second semiconductor chip and a third semiconductor chip. The second semiconductor chip is stacked on the first semiconductor chip, and is electrically connected to the first semiconductor chip by hybrid bonding. The third semiconductor chip is stacked on the second semiconductor chip, and is electrically connected to the second semiconductor chip through a plurality of bumps.

Abstract: A semiconductor device includes: a plurality of semiconductor chips spaced apart from one another; and a conductive part. The plurality of semiconductor chips include respective semiconductor switching elements. The conductive part connects the plurality of semiconductor chips in parallel. A material of the semiconductor switching elements of the plurality of semiconductor chips includes a wide bandgap semiconductor. At least one of the semiconductor switching elements has a channel length of 1.5 ?m or less.

Abstract: Embodiments of the present disclosure provide a display panel, in which a hole control layer is disposed on a hole transport layer, a light-emitting material layer is disposed on the hole control layer, and the hole control layer includes a first sub-hole control layer and a second sub-hole control layer. An energy difference between a HOMO energy level of the first sub-hole control layer and a HOMO energy level of the second sub-hole control layer is greater than or equal to 0.2 eV, and the HOMO energy level of the second sub-hole control layer is greater than a HOMO energy level of the light-emitting material layer and less than a HOMO energy level of the hole transport layer.

Abstract: Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after the exposing of the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.

Abstract: Apparatuses, systems, and methods are presented for data storage with internal thermal transfer. A plurality of memory elements may be disposed within a thermally conductive housing. A controller may be disposed within the housing and thermally connected to the housing. A heat spreader may be thermally connected to the housing and to the plurality of memory elements, and not thermally connected to the controller.

Abstract: A semiconductor structure having improved placeholder position margin is provided. The semiconductor structure includes a backside source/drain contact structure contacting one source/drain region of a nanosheet transistor. The backside source/drain contact structure has a first portion and a second portion. The second portion of the backside source/drain contact structure, which is in direct contact with the source/drain region is confined by bottommost upper inner spacers, lower inner spacers and a semiconductor pedestal which vertically separates the bottommost inner spacers from the lower inner spacers.

Abstract: A method of forming silicon within a gap on a surface of a substrate. The method includes use of two or more pyrometers to measure temperatures at two or more positions on a substrate and/or a substrate support and a plurality of heaters that can be divided into zones of heaters, wherein the heaters or zones of heaters can be independently controlled based on the measured temperatures and desired temperature profiles.

Abstract: Disclosed herein are approaches for measuring lateral dopant concentration and distribution in high aspect radio trench structures. In one approach, a method may include providing a substrate including a plurality of alternating vertical structures and trenches, and removing a portion of the substrate to expose a sidewall of the first vertical structure of the plurality of structures. The method may further include directing a spectrometry beam into the sidewall of the first vertical structure to determine a dopant characteristic of the first vertical structure, wherein the spectrometry beam is delivered perpendicular to a plane defined by the sidewall of the first vertical structure.