Abstract: An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

Abstract: When conditions for an electron gun mainly represented by extraction voltage V1 and accelerating voltage V0 are changed, a charged particle beam is once focused on a fixed position by means of a condenser lens and a virtual cathode position is calculated from a lens excitation of the condenser lens at that time and the mechanical positional relation of the electron gun to set an optical condition. For more accurate setting of the optical condition, a deflecting electrode device is provided at a crossover position of the condenser lens and a voltage is applied to the deflecting electrode device at a constant period so as to control the lens excitation of the condenser lens such that the amount of movement of an image is minimized on an image display unit such as CRT.

Abstract: A mass spectrometer having an ion source section capable of creating positive ions and negative ions at high efficiency. The ion source is comprised of an ion source section for creating ions of a sample gas, a mass spectrometric section for conducting mass separation of created ions, linear RF generating multipole electrodes, magnetic fields generation means, a sample gas introduction system, a reaction gas introduction system and an electron source in which the linear RF generating multipole electrodes generate linear RF multipole electric fields. A static magnetic fields is applied in parallel on the center axis where the linear RF multipole electric fields are zero. A sample gas and a reagent gas are introduced into the ion source section. Electrons are injected for creating reaction of the positive ions or negative ions.

Abstract: The present invention provides an improved high dosage radioactive drug subpackaging shielding device, which allows for transversal rotational movements by means of a disk, while outer grooves of support posts hook into inner grooves of long supports, thereby enabling longitudinal rotational adjustments of a drug canister disposed on the long supports. Position of the canister is fixed with a screw down device after making transversal rotational adjustments, and a catch device functioning in coordination with a round-hole perforated disk enables fixing the angle of the canister after making longitudinal rotational adjustments. Furthermore, hook grooves of a carry support are used to hook into inner grooves of support posts, thereby facilitating a user to conveniently detach and transport the canister, and enables the human body to avoid coming in direct contact with the canister containing radioactive drugs, thus preventing radioactive radiation from endangering the human body.

Abstract: An ion resonance condition is corrected accurately in an ion trapping device. Measurements are repeated by alternately applying and not applying a resonance frequency voltage while spectral data is obtained continuously. Data obtained in the absence of the resonance frequency voltage is used as reference data to correct the set data of a resonance condition. As a result, calibration can be made while taking into consideration the variations in the amount of ions that are introduced into the ion trap.

Abstract: An apparatus and method for reducing speckle of a laser beam is disclosed. The apparatus includes a light guide, a highly reflective mirror at the input face of the light guide and a partially reflective mirror at the exit face of the light guide. A coherent laser beam is introduced into the light guide through a clear aperture in the highly reflective mirror. Within the light guide, the laser beam gets separated into plural, successive beamlets having different phase shifts, different polarization states and/or path length differences equal to or greater than the coherence length of the laser beam. The beamlets exit the light guide through the partially reflective mirror to provide output laser light with reduced speckle. The light guide can be either a solid light pipe of transmissive material or a hollow tunnel with reflective interior sidewalls.

Abstract: Ion source and method of making and sharpening. The ion source is a single crystal metal conductor having a substantially conical tip portion with substantial rotational symmetry. The tip portion terminates with a tip radius of curvature in the range of 50–100 nanometers. The ion source is made by electrochemical etching so that a conical tip of a selected geometry is formed. The ion source is then sharpened to provide a source of ions from a volume near the size of a single atom. Further, this ion source makes possible a stable and practical light ion microscope which will have higher resolution than existing scanning electron microscopes and scanning metal-ion microscopes.

Abstract: Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.

Abstract: An electron-beam metrology system includes a specimen stage to mount a specimen on which a device pattern is formed, electron optics to radiate the device pattern with an electron-beam, a secondary electron detector to detect a secondary electron generated by the radiation of the electron-beam, and an information processing system to analyze a signal obtained from the secondary electron detector. A standard reference for metrology is held on the specimen stage, and the standard reference includes a first grating unit pattern including an array of gratings having pitch sizes which are verified by an optical method, and a second grating unit pattern including an array of gratings having pitch sizes which are smaller than the pitch sizes of the first grating unit pattern.

Abstract: An ion gate is disposed between a first volume occupied by a first carrier gas and ions of the first carrier gas and a second volume occupied by a second carrier gas. The ion gate includes at least one channel connecting the first volume to the second volume, a first electrode disposed on an inlet surface of the ion gate facing the first volume, and a second electrode disposed on an outlet surface of the ion gate facing the second volume. Ions are transported from the first volume to the second volume through the channel under an electric field produced by the first and second electrode.

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.

Abstract: The usual xenon radiation source in conventional weathering testers is replaced by UV light-emitting diodes (LEDs) (6). These can be used to provide a good approximation of the UV component of the solar spectrum, in particular when different types of UV light-emitting diodes (6) with different emission characteristics are employed. Optionally, further light-emitting diodes in the visible spectral range may also be used in order to cover other parts of the solar spectrum. The light-emitting diodes (6) may be mounted on a flexible printed circuit board (5), which may in turn be fitted on a tubular holding body (4). The flexible printed circuit board carrying the light-emitting diodes may also be placed on other substrates (7) which are pliable in a geometrically stable way, so that that they can be arranged at a uniform distance from material samples with a particular surface topology, in order to obtain uniform exposure.

Abstract: A first manual input device for inputting an irradiation ready state is provided in each treatment room or a control room formed corresponding to the treatment room. A safety device confirms that preparations for generation of an ion beam in an accelerator are completed and preparations for transport of the ion beam in a beam transport system for introducing the ion beam to an irradiation unit in the treatment room selected in response to a ready signal from the first manual input device are completed, followed by outputting ready information. A ready state display unit for displaying the ready information is provided. In the treatment room or the control room, a second manual input device is provided for inputting an irradiation start instruction when the ready information is displayed by the ready state display unit.

Abstract: With complexity of a process, the setting of conditions for pattern measurement by an SEM image falls into difficulties. However, the present invention aims to realize the setting of easy and reliable measuring conditions even with respect to a pattern complex in structure. Points characterized in terms of an SEM image signal are calculated as candidates for measurement values. The calculated candidates for measurement values are displayed with being superimposed on the SEM image. An operator selects the optimum one from the displayed candidates and thereby determines the optimum image processing condition for measurement. The relationship between the result of measurement under a predetermined image processing condition and pattern portions has been made clear using model data of a sectional shape and an electron beam simulation image.

Abstract: The present invention relates generally to a multi-reflecting time-of-flight mass spectrometer (MR TOF MS). To improve mass resolving power of a planar MR TOF MS, a spatially isochronous and curved interface may be used for ion transfer in and out of the MR TOF analyzer. One embodiment comprises a planar grid-free MR TOF MS with periodic lenses in the field-free space, a linear ion trap for converting ion flow into pulses and a C-shaped isochronous interface made of electrostatic sectors. The interface allows transferring ions around the edges and fringing fields of the ion mirrors without introducing significant time spread. The interface may also provide energy filtering of ion packets. The non-correlated turn-around time of ion trap converter may be reduced by using a delayed ion extraction from the ion trap and excessive ion energy is filtered in the curved interface.

Abstract: A particle beam therapy system transports an ion beam emitted from an accelerator to one of a plurality of treatment rooms. When preparations for irradiation of the ion beam to patients in the plurality of treatment rooms are completed, irradiation ready signals are outputted from treatment (operator) consoles provided respectively in the treatment rooms. A first-come, first-served basis controller decides the sequence of introducing the ion beam to the treatment rooms based on the order in which the respective irradiation ready signals have been inputted. Beam paths for introducing the ion beam emitted from the accelerator to respective irradiation units in the treatment rooms are formed in accordance with the decided sequence.

Abstract: One embodiment disclosed relates to an electron beam apparatus for inspection of a semiconductor wafer, wherein substantially an entire area of the wafer surface is scanned without moving the stage. A cathode ray tube (CRT) gun may be used to rapidly (and cost effectively) scan the beam over the wafer. Another embodiment disclosed relates to a high-speed automated e-beam inspector configured to scan the e-beam in one dimension while translating the wafer in a perpendicular direction. The translation may be linear, or alternatively, may be in a spiral path. Other embodiments are also disclosed.

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.

Abstract: An inspection system includes a SEM visual inspection apparatus for detecting a defect in a semiconductor sample in steps of manufacturing a semiconductor device and a review apparatus for observing, at a high resolution, the defect in the semiconductor sample detected by the SEM visual inspection apparatus. The system has a function of transmitting an alignment dictionary image as one of alignment parameters to be set by the SEM visual inspection apparatus using an inspection recipe to the review apparatus.

Abstract: A radiation therapy/surgery device optimised to meet the needs of the Neurosurgeon is provided, i.e. one for the treatment of tumours in the brain. It combines the qualities of a good penumbra and accuracy, simple prescription and operation, together with high reliability and minimal technical support. The device comprises a rotateable support, on which is provided a mount extending from the support out of the plane of the circle, and a radiation source attached to the mount via a pivot, the pivot having an axis which passes through the axis of rotation of the support, the radiation source being aligned so as to produce a beam which passes through the co-incidence of the rotation axis and the pivot. It will generally be easier to engineer the apparatus if the rotateable support is planar, and more convenient if the rotateable support is disposed in an upright position. The rotation of the rotateable support will be eased if this part of the apparatus is circular.