Patents Examined by Jiong-Ping Lu
  • Aqueous anionic functional silica slurry and amine carboxylic acid compositions for selective nitride removal in polishing and methods of using them
    Patent number: 11186748
    Abstract: The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions comprising one or more dispersions of a plurality of elongated, bent or nodular anionic functional colloidal silica particles or their mixture with one or more dispersions of anionic functional spherical colloidal silica particles, one or more amine carboxylic acids having an isoelectric point (pI) below 5, preferably, an acidic amino acid or pyridine acid, and, preferably, one or more ethoxylated anionic surfactants having a C6 to C16 alkyl, aryl or alkylaryl hydrophobic group, wherein the compositions have a pH of from 3 to 5. The compositions enable good silicon nitride removal and selectivity of nitride to oxide removal in polishing.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: November 30, 2021
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Naresh Kumar Penta
  • Slurry composition and method of manufacturing integrated circuit device by using the same
    Patent number: 11186749
    Abstract: A slurry composition is disclosed which includes: a corrosion inhibitor including a material selected from carbon allotropes and derivatives thereof; and an oxidant. A method of manufacturing an integrated circuit device is disclosed which includes: forming a first metal film and a second metal film on a substrate, the first metal film and the second metal film respectively including different metals; and polishing, by using the slurry composition, a polishing target surface at which the first metal film and the second metal film are exposed.
    Type: Grant
    Filed: May 20, 2020
    Date of Patent: November 30, 2021
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Boyun Kim, Yeryung Jeon, Boun Yoon, Taek Dong Chung, Jae Gyeong Lee, Jin-Young Lee
  • Selective etch process using hydrofluoric acid and ozone gases
    Patent number: 11183397
    Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: November 23, 2021
    Assignees: Beijing E-Town Semiconductor Technology, Co., LTD, Mattson Technology, Inc.
    Inventors: Qi Zhang, Haichun Yang, Hua Chung, Ting Xie, Michael X. Yang
  • Mask member and method for producing semiconductor device
    Patent number: 11177135
    Abstract: A mask member contains tungsten (W), boron (B), and carbon (C). The mask member includes a first portion in contact with a process film, the first portion, in which the terms of the composition ratio, which correspond to boron and carbon, are larger than the term of the composition ratio, which corresponds to tungsten, and a second portion in which the term of the composition ratio, which corresponds to tungsten, is larger than the terms of the composition ratio, which correspond to carbon and boron.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: November 16, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Yuya Matsubara, Masayuki Kitamura, Atsuko Sakata
  • Alternating hardmasks for tight-pitch line formation
    Patent number: 11171002
    Abstract: Methods of forming fins include masking a region on a three-color hardmask fin pattern, leaving a fin of a first color exposed. The exposed fin of the first color is etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into a fin base layer using the fins of the first color and the fins of the third color.
    Type: Grant
    Filed: February 24, 2020
    Date of Patent: November 9, 2021
    Assignee: Tessera, Inc.
    Inventors: John C. Arnold, Anuja E. DeSilva, Nelson M. Felix, Chi-Chun Liu, Yann A. M. Mignot, Stuart A. Sieg
  • Leveraging precursor molecular composition and structure for atomic layer etching
    Patent number: 11171013
    Abstract: Provided is a method of selectively etching a substrate comprising at least one cycle of: depositing a chemical precursor on a surface of the substrate to form a chemical precursor layer on the substrate, the substrate comprising a first portion and a second portion, wherein the first and the second portion are of a different composition; selectively removing the chemical precursor layer and at least a part of the first portion of the substrate; and repeating the cycle until the first portion of the substrate is substantially or completely removed, wherein deposition of the chemical precursor and selective removal of the chemical precursor layer and at least a part of the first portion of the substrate are performed under a plasma environment.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: November 9, 2021
    Assignee: University of Maryland, College Park
    Inventors: Gottlieb S. Oehrlein, Kang-Yi Lin, Chen Li
  • Substrate processing device and substrate processing method
    Patent number: 11164750
    Abstract: A substrate processing method includes a first processing step of processing a substrate using phosphoric acid set to a first temperature in a processing tank, and a second processing step of processing the substrate using phosphoric acid set to a second temperature in the processing tank.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: November 2, 2021
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Tomohiro Takahashi, Kei Takechi
  • Processing method in processing apparatus using halogen-based gas
    Patent number: 11158490
    Abstract: A processing apparatus performs a predetermined process on an object to be processed by supplying halogen-based gas into a chamber in which a vacuum is maintained, to which chamber a member having an oxide film formed on a surface thereof is connected, or which chamber has an oxide film formed on a surface thereof, wherein the predetermined processing is performed on the target object once or a plurality of times in the chamber. Later, oxygen gas or dry air is supplied to the chamber to purge the chamber, and then the chamber is opened and exposed to the atmosphere.
    Type: Grant
    Filed: October 3, 2016
    Date of Patent: October 26, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Tomohito Matsuo, Hiroshi Nagaike
  • Plasma enhanced deposition processes for controlled formation of oxygen containing thin films
    Patent number: 11158500
    Abstract: Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.
    Type: Grant
    Filed: May 3, 2018
    Date of Patent: October 26, 2021
    Assignee: ASM IP HOLDING B.V.
    Inventors: Lingyun Jia, Viljami J. Pore, Marko Tuominen, Sun Ja Kim, Oreste Madia
  • Plasma processing methods using low frequency bias pulses
    Patent number: 11158516
    Abstract: A plasma processing method includes providing a first source power (SP) pulse to an SP coupling element for a first SP pulse duration to generate plasma in a processing chamber, providing a high frequency bias power (HBP) pulse to a substrate holder disposed in the processing chamber for a HBP pulse duration overlapping the first SP pulse duration, and providing a first low frequency bias power (LBP) pulse to the substrate holder for a first LBP pulse duration not overlapping the first SP pulse duration. The HBP pulse includes an HBP pulse frequency that is greater than 800 kHz. The first LBP pulse includes an LBP pulse frequency that is less than about 800 kHz.
    Type: Grant
    Filed: February 7, 2020
    Date of Patent: October 26, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Alok Ranjan, Peter Ventzek, Mitsunori Ohata
  • Polishing pad and polishing method using same
    Patent number: 11154960
    Abstract: Provided is a polishing pad including a polishing surface having a zeta potential of +0.1 mV or more at a pH of 10.0. Preferably, a polishing pad including a polyurethane having a tertiary amine is provided. Further preferably, the polyurethane having a tertiary amine is a reaction product of a polyurethane reaction raw material containing at least a chain extender having a tertiary amine. A polishing method using the polishing pads is also provided, wherein the method is performed while supplying an alkaline polishing slurry.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: October 26, 2021
    Assignee: KURARAY CO., LTD.
    Inventors: Minori Takegoshi, Mitsuru Kato, Chihiro Okamoto, Shinya Kato
  • Fluorocarbon molecules for high aspect ratio oxide etch
    Patent number: 11152223
    Abstract: Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: October 19, 2021
    Assignee: American Air Liquide, Inc.
    Inventors: Curtis Anderson, Rahul Gupta, Vincent M. Omarjee, Nathan Stafford, Christian Dussarrat
  • Polishing liquid and polishing method
    Patent number: 11136474
    Abstract: A polishing liquid for polishing a surface to be polished containing a tungsten material, the polishing liquid comprising abrasive grains; a polymer having a cationic group at the terminal; an oxidizing agent; a metal oxide-dissolving agent; and water, in which the polymer has a structural unit derived from an unsaturated carboxylic acid, a weight average molecular weight of the polymer is 20000 or less, and a pH is less than 5.0.
    Type: Grant
    Filed: January 23, 2018
    Date of Patent: October 5, 2021
    Assignee: Showa Denko Materials Co., Ltd.
    Inventors: Hiroshi Ono, Makoto Mizutani
  • Etching method
    Patent number: 11127600
    Abstract: An etching method includes: providing a substrate including a silicon oxide film on a stage; controlling a surface temperature of the substrate to be ?70° C. or lower; and etching the silicon oxide film with plasma generated by supplying a radio-frequency power to a gas containing fluorine and hydrogen, after the controlling the surface temperature of the substrate; and increasing the surface temperature of the substrate to volatilize a by-product generated by the etching.
    Type: Grant
    Filed: February 18, 2020
    Date of Patent: September 21, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Koki Tanaka, Maju Tomura
  • Method of polishing substrate and polishing composition set
    Patent number: 11124675
    Abstract: A substrate polishing method includes a stock polishing step comprising a plurality of stock polishing sub-steps in which a first polishing solution, a second polishing solution, and a third polishing solution are applied, in that order, to a substrate. A content COMP1 of water-soluble polymer P1 in the first polishing solution, a content COMP2 of water-soluble polymer P2 in the second polishing solution, and a content COMP3 of water-soluble polymer P3 in the third polishing solution satisfy COMP1<COMP2<COMP3, and any one of the following conditions is satisfied: (1) average primary particle diameter DA3 of abrasive A3 in the third polishing solution is smaller than average primary particle diameter DA1 of abrasive A1 in the first polishing solution and average primary particle diameter DA2 of abrasive A2 in the second polishing solution; and (2) the third polishing solution does not contain abrasive A3.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: September 21, 2021
    Assignee: FUJIMI INCORPORATED
    Inventor: Makoto Tabata
  • Chemical mechanical planarization of films comprising elemental silicon
    Patent number: 11111415
    Abstract: Chemical Mechanical Planarization (CMP) polishing compositions comprising abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and Silicon-Germanium.
    Type: Grant
    Filed: October 4, 2019
    Date of Patent: September 7, 2021
    Assignee: Versum Materials US, LLC
    Inventors: James Matthew Henry, Hongjun Zhou, Krishna P. Murella, Dnyanesh Chandrakant Tamboli, Joseph Rose
  • Methods of forming variable-depth device structures
    Patent number: 11112694
    Abstract: A method for forming a device structure is disclosed. The method of forming the device structure includes forming a variable-depth structure in a device material layer using cyclic-etch process techniques. A plurality of device structures is formed in the variable-depth structure to define vertical or slanted device structures therein. The variable-depth structure and the vertical or slanted device structures are formed using an etch process.
    Type: Grant
    Filed: May 13, 2020
    Date of Patent: September 7, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Andre P. LaBonte, Ludovic Godet, Rutger Meyer Timmerman Thijssen
  • Method for producing base for metal masks, method for producing metal mask for vapor deposition, base for metal masks, and metal mask for vapor deposition
    Patent number: 11111585
    Abstract: A rolled metal sheet includes an obverse surface and a reverse surface that is a surface located opposite to the obverse surface. At least either one of the obverse surface and the reverse surface is a processing object. A method for manufacturing a metal mask substrate includes reducing a thickness of the rolled metal sheet to 10 ?m or less by etching the processing object by 3 ?m or more by use of an acidic etching liquid, and roughening the processing object so that the processing object becomes a resist formation surface that has a surface roughness Rz of 0.2 ?m or more, thereby obtaining a metal mask sheet.
    Type: Grant
    Filed: October 17, 2017
    Date of Patent: September 7, 2021
    Assignee: TOPPAN PRINTING CO., LTD.
    Inventors: Naoko Mikami, Sumika Tamura, Reiji Terada, Masashi Kurata, Daisei Fujito, Kiyoaki Nishitsuji, Takehiro Nishi
  • Microcircuit forming method and etching fluid composition
    Patent number: 11089691
    Abstract: The disclosure relates to a microcircuit forming method. The microcircuit forming method according to the disclosure comprises: a seed-layer forming step for forming a high-reflectivity seed layer on a substrate material by using a conductive material; a pattern-layer forming step for forming a pattern layer on the seed layer, the pattern layer having a pattern hole arranged thereon to allow the seed layer to be selectively exposed therethrough; a plating step for filling the pattern hole with a conductive material; a pattern-layer removing step for removing the pattern layer; and a seed-layer patterning step for removing a part of the seed layer which does not overlap the conductive material in the plating step, wherein the high-reflectivity seed layer has a specular reflection property.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: August 10, 2021
    Assignee: InkTec Co., Ltd.
    Inventors: Su Han Kim, Kwang-Choon Chung, Jung Yoon Moon, Sung In Ha, Byung Woong Moon
  • Replacement gate process for semiconductor devices
    Patent number: 11081402
    Abstract: Disclosed is a method of forming a semiconductor device. The method includes providing a precursor having a substrate and gate stacks over the substrate, wherein each of the gate stacks includes an electrode layer, a first hard mask (HM) layer over the electrode layer, and a second HM layer over the first HM layer. The method further includes depositing a dielectric layer over the substrate and the gate stacks and filling spaces between the gate stacks; and performing a first chemical mechanical planarization (CMP) process to partially remove the dielectric layer. The method further includes performing an etching process to remove the second HM layer and to partially remove the dielectric layer, thereby exposing the first HM layer. The method further includes performing a second CMP process to at least partially remove the first HM layer.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: August 3, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Jen Shen, Ying-Ho Chen, Yung-Cheng Lu