Abstract: A method of post-deposition treatment for silicon oxide film includes: providing in a reaction space a substrate having a recess pattern on which a silicon oxide film is deposited; supplying a reforming gas for reforming the silicon oxide film to the reaction space in the absence of a film-forming precursor, said reforming gas being composed primarily of He and/or H2; and irradiating the reforming gas with microwaves in the reaction space having a pressure of 200 Pa or less to generate a direct microwave plasma to which the substrate is exposed, thereby reforming the silicon oxide film.

Abstract: A method of controlling platen rotation includes receiving an electrical energy input at a rotator assembly, using the rotator assembly to increase a rotational kinetic energy of a platen based on the electrical energy input, using the rotator assembly to decrease the rotational kinetic energy of the platen, and generating an electrical energy output of the rotator assembly based on the decreased rotational kinetic energy of the platen.

Abstract: A method for machining, in particular for cutting an, in particular, planar substrate by laser-induced deep etching includes: moving laser radiation along a machining line; directing individual pulses onto the planar substrate at a spatial laser pulse distance (d); and subsequently removing an anisotropic material by etching at an etching rate (r) and an etching duration (t). Machining parameters are set according to a condition: 1>d/(R*t)>10?5.

Abstract: A method for treating a substrate includes receiving a substrate in a vacuum process chamber. The substrate includes a III-V film layer disposed on the substrate. The III-V film layer includes an exposed surface, an interior portion underlying the exposed surface, and one or more of the following: Al, Ga, In, N, P, As, Sb, Si, or Ge. The method further includes altering the chemical composition of the exposed surface and a fraction of the interior portion of the III-V film layer to form an altered portion of the III-V film layer using a hydrogen-based plasma treatment, removing the altered portion of the III-V film layer using a chlorine-based plasma treatment, and repeating the altering and removing of the III-V film layer until a predetermined amount of the III-V film layer is removed from the substrate.

Abstract: A substrate processing method includes: maintaining an atmosphere in contact with at least a surface of a substrate on which a first material that is a metal and a second material that is a material other than the first material are exposed, as a deoxidized atmosphere; supplying a film forming material, which selectively forms a film on the first material among the first material and the second material, to the surface of the substrate in a state where the deoxidized atmosphere is maintained by the maintaining; performing a surface treatment of the second material in a state where the film is formed on a surface of the first material supplied in the supplying the film forming material; and removing the film from the surface of the first material after the performing the surface treatment.

Abstract: A polishing liquid comprising a liquid medium, an abrasive grain and a polymer, wherein the polymer includes a first molecular chain having a functional group directly bonded thereto, and a second molecular chain branched from the first molecular chain, and the functional group is at least one selected from the group consisting of a carboxyl group, a carboxylic acid salt group, a hydroxyl group, a sulfo group and a sulfonic acid salt group.

Abstract: The present invention relates to a polishing agent including: a water-soluble polymer including a copolymer of a monomer (A) which includes at least one member selected from the group consisting of an unsaturated dicarboxylic acid, a derivative thereof, and salts of the unsaturated dicarboxylic acid and the derivative thereof and a monomer (B) other than the monomer (A), comprising an ethylenic double bond and no acidic group; a cerium oxide particle; and water, in which the polishing agent has a pH of 4 to 9.

Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.

Abstract: Provided are a method for producing a pattern laminate, the pattern laminate having a first layer having a pattern on an object to be processed and a second layer, which has a small waviness after etching (?LWR), in which the method includes a step of forming a first layer having a pattern on an object to be processed and a step of forming a second layer on the first layer, and the glass transition temperature of the first layer is 90° C. or higher; a method for producing a reversal pattern; and a pattern laminate.

Abstract: A thin-film covered stent device may include a thin-film mesh and a stent backbone covered by the thin-film mesh, thereby forming a dual-layer stent structure. The thin-film covered stent device may have smaller pores and a high pore density compared to conventional stents. For example, the thin-film covered stent device may have a slit length of between 50 and 250 micrometers and a pore density of between 134 and 227 pores per mm2. The thin-film covered stent device facilitates rapid healing of tissue defects such as those encountered during the endovascular treatment of an aneurysm.

Abstract: Provided is a patterning method including: providing a strip layer with a plurality of strips A, in combination with a plurality of strips B and strips C arranged alternately between the strips A; forming a first mask layer having a first opening on the strip layer; removing the strips A and B exposed by the first opening; forming a plurality of first spacers on sidewalls defined by the first opening; forming a plurality of second spacers on sidewalls of the first spacers respectively; forming a second mask layer having a second opening on the strip layer; removing the strips A and C exposed by the second opening; forming a plurality of third spacers defined by the second opening; forming a plurality of fourth spacers on sidewalls of the third spacers respectively; and removing the strips A, the first spacers, and the third spacers to form a pattern layer.

Abstract: A polishing composition according to the present invention includes: silica; an anionic water-soluble polymer; at least one compound selected from the group consisting of a phosphonate group-containing compound, a phosphate group-containing compound, and an amino group-containing compound; and a dispersing medium.

Abstract: A laser marking system for marking a predetermined pattern on a workpiece may include a first light source structured to emit first light at a first wavelength; a second light source structured to emit second light at a second wavelength different from the first wavelength and selected to mark a marking surface of the workpiece; beam shaping optics structured to adjust a focal length of the second light; beam steering optics structured to aim the first laser light and the second laser light; a controller configured to control the first light source to emit the first light at the marking surface of the workpiece and control the beam steering optics to aim the second light so as to mark the marking surface of the workpiece and create the first predetermined pattern; and a camera structured to detect first light reflected from the marking surface and record an image.

Abstract: A new solvent-based method is presented for making low-cost composite graphite electrodes containing a thermoplastic binder. The electrodes, termed thermoplastic electrodes (TPEs), are easy to fabricate and pattern, give excellent electrochemical performance, and have high conductivity (1500 S m?1). The thermoplastic binder enables the electrodes to be hot embossed, molded, templated, and/or cut with a CO2 laser into a variety of intricate patterns. These electrodes show a marked improvement in peak current, peak separation, and resistance to charge transfer over traditional carbon electrodes. The impact of electrode composition, surface treatment (sanding, polishing, plasma treatment), and graphite source were found to impact fabrication, patterning, conductivity, and electrochemical performance. Under optimized conditions, electrodes generated responses similar to more expensive and difficult to fabricate graphene and highly oriented pyrolytic graphite electrodes.

Abstract: A system including two components intended to be in friction contact with each other in a given direction, wherein the friction occurs in a functional area, wherein the system is at least one of the two components including, on a surface in the functional area, a texture formed of a series of troughs of rounded shape separated by peaks or a series of bumps of rounded shape separated by troughs, the troughs extending parallel in the given direction and allowing for the evacuation of debris produced by friction and serving as a reservoir for a lubricant. A method for manufacturing at least one component or a mold by the DRIE (deep reactive ion etching) process, wherein surface defects on the sidewalls machined by the DRIE process are used to form the troughs.

Abstract: The present invention relates, generally, to a component containing a composite of at least two layers that are connected to each other, in which the first layer comprises a hole and the second layer has a thickness in the range of 1 to 50 ?m. The first and second layers each contain at least one metal and compositions of the first and second layers are different. Further objects of the present invention include a method for producing a component containing at least two layers that are connected to each other and have the aforementioned features, a method for producing a component containing at least three layers that are connected to each other and have the aforementioned features, as well as a component that is obtained by one of the aforementioned methods and a device containing at least one of the aforementioned components for use in a living body.

Abstract: An etch process that includes removing an oxide containing surface layer from a semiconductor surface to be etched by applying a hydrofluoric (HF) based chemistry, wherein the hydrofluoric (HF) based chemistry terminates the semiconductor surface to be etched with silicon-hydrogen bonds, and applying a vapor priming agent bearing chemical functionality based on the group consisting of alkynes, alcohols and a combination thereof to convert the silane terminated surface to a hydrophobic organic surface. The method continues with forming a photoresist layer on the hydrophobic organic surface; and patterning the photoresist layer. Thereafter, the patterned portions of the photoresist are developed to provide an etch mask. The portions of the semiconductor surface exposed by the etch mask are then etched.

Abstract: A method of fabricating a semiconductor structure including the following steps is provided. A mask layer is formed on a semiconductor substrate. The semiconductor substrate revealed by the mask layer is anisotropically etched until a cavity is formed in the semiconductor substrate, wherein anisotropically etching the semiconductor substrate revealed by the mask layer comprises performing a plurality of first cycles and performing a plurality of second cycles after performing the first cycles, each cycle among the first and second cycles respectively includes performing a passivating step and performing an etching step after performing the passivating step. During the first cycles, a first duration ratio of the etching step to the passivating step is variable and ramps up step by step. During the second cycles, a second duration ratio of the etching step to the passivating step is constant, and the first duration ratio is less than the second duration ratio.

Abstract: According to one embodiment, an etching solution used for etching of silicon nitride is provided. The etching solution includes phosphoric acid, an acid, silicic acid compound, and water. The phosphoric acid has a first acid dissociation exponent pKa1. The acid has an acid dissociation exponent smaller than the first acid dissociation exponent pKa1. A mass ratio M1/M2 of mass M1 of the phosphoric acid to mass M2 of the acid having the acid dissociation exponent smaller than the first acid dissociation exponent pKa1 is within a range of 0.82 or more and 725 or less.

Abstract: The present disclosure includes apparatuses and methods related to freezing a sacrificial material in forming a semiconductor. In an example, a method may include solidifying, via freezing, a sacrificial material in an opening of a structure, wherein the sacrificial material has a freezing point below a boiling point of a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to a particular temperature range.