Patents Examined by John Guay
  • Patent number: 6271583
    Abstract: A semiconductor device includes a substrate having a first surface, a second surface and at least one conductor part which are exposed at both the first and second surfaces of the substrate, a semiconductor chip provided on the first surface of the substrate and having a plurality of electrode pads, a plurality of leads, a plurality of bonding-wires electrically connecting the leads and the conductor parts to corresponding ones of the electrode pads of the semiconductor chip, and a resin package encapsulating the semiconductor chip, a part of the leads, and the substrate so that the conductor parts are exposed at the second surface of the substrate.
    Type: Grant
    Filed: June 16, 1998
    Date of Patent: August 7, 2001
    Assignee: Fujitsu Limited
    Inventors: Hideharu Sakoda, Yoshiyuki Yoneda, Kazuto Tsuji
  • Patent number: 6229153
    Abstract: A resonant tunneling diode is produced in a gallium arsenide material system formed with barrier layers of AlGaAs with a quantum well layer of low band-gap material between them. The material of the well is selected to adjust the second energy level to the edge of the conduction band in GaAs, with a preferred quantum well layer formed of InGaAs. The resonant tunneling diode structure is grown by a metal organic chemical vapor deposition process on the surface of the nominally exact (100) GaAs substrate. Layers of doped GaAs may be formed on either side of the multilayer resonant tunneling diode structure, and spacer layers of GaAs may also be provided on either side of the barrier layers to reduce the intrinsic capacitance of the structure.
    Type: Grant
    Filed: June 19, 1997
    Date of Patent: May 8, 2001
    Assignee: Wisconsin Alumni Research Corporation
    Inventors: Dan Botez, Luke J. Mawst, Ali R. Mirabedini
  • Patent number: 6215158
    Abstract: The present invention provides a semiconductor device, formed on a semiconductor wafer, comprising a tub, first and second active areas, and an interconnect. In one aspect of the present invention, the tub is formed in the substrate of the semiconductor wafer and first and second active areas are in contact with the tub. In one advantageous embodiment, the interconnect is formed in the tub and is in electrical contact with the first and second active areas. The interconnect extends from the first active area to the second active area to electrically connect the first and second active areas.
    Type: Grant
    Filed: September 10, 1998
    Date of Patent: April 10, 2001
    Assignee: Lucent Technologies Inc.
    Inventor: Seungmoo Choi
  • Patent number: 6184569
    Abstract: An external inputting/outputting line connecting an external connection pad with an internal circuit is located along a peripheral edge of a semiconductor chip, between the edge and the external connection pad.
    Type: Grant
    Filed: June 17, 1998
    Date of Patent: February 6, 2001
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Kazuyoshi Fukuda
  • Patent number: 6165815
    Abstract: A method for increasing integrated circuit density comprising stacking an upper wafer and a lower wafer, each of which have fabricated circuitry in specific areas on their respective face surfaces. The upper wafer is attached back-to-back with the lower wafer with a layer of adhesive applied over the back side of the lower wafer. The wafers are aligned so as to bring complimentary circuitry on each of the wafers into perpendicular alignment. The adhered wafer pair is then itself attached to an adhesive film to immobilize the wafer during dicing. The adhered wafer pair may be die into individual die pairs or wafer portions containing more than one dice pair. At least one face side of the die pair (attachment side) may have an array of minute solder balls or small pins disposed thereon for attachment and electrical communication of the die to at least one substrate such as a printed circuit board or leadframe.
    Type: Grant
    Filed: April 18, 1997
    Date of Patent: December 26, 2000
    Assignee: Micron Technology, Inc.
    Inventor: Michael B. Ball
  • Patent number: 6159754
    Abstract: A method of making circuit edit structures through the backside of a flip-chip packaged integrated circuit die. In one embodiment, a circuit edit is achieved by exposing first and second circuit edit connection targets through a semiconductor substrate of the integrated circuit die from the backside. Next, a polyimide layer is vapor deposited over the first and second circuit edit connection targets and the exposed semiconductor substrate. Next, the circuit edit connection targets are re-exposed through the polyimide layer and a conductor is deposited over the re-exposed circuit edit connection targets and the deposited polyimide layer from the backside of the integrated circuit to couple together the circuit edit connection targets. The polyimide layer may act as both an insulation layer and an anti-reflective coating layer.
    Type: Grant
    Filed: May 7, 1998
    Date of Patent: December 12, 2000
    Assignee: Intel Corporation
    Inventors: Jian Li, Paul Winer, Adam J. DeGrush, Steven P. Maher
  • Patent number: 6157049
    Abstract: A p-n junction is connected between two terminals. The p-n junction is formed between two semiconductor regions of a semiconductor with a breakdown field strength of at least 10.sup.6 V/cm. A channel region, which adjoins the p-n junction is connected in series with a silicon component between the two terminals. The channel region is provided in a first of the two semiconductor regions. A depletion zone of the p-n junction carries the reverse voltage in the off state of the silicon component.
    Type: Grant
    Filed: September 14, 1998
    Date of Patent: December 5, 2000
    Assignee: Siemens Aktiengesellschaft
    Inventors: Heinz Mitlehner, Michael Stoisiek
  • Patent number: 6157042
    Abstract: An infrared detector array includes a plurality of detector pixel structures, each of which comprises a plurality of elongate quantum well infrared radiation absorbing photoconductor (QWIP) elements. The group of QWIP elements are spaced such that they comprise a diffraction grating for the received infrared radiation. Top and bottom longitudinal contacts are provided on opposite surfaces of the QWIP elongate elements to provide current flow transverse to the axis of the element to provide the required bias voltage. An optical cavity enhancement coating applied to the surface of the elements. The coating can be applied as to fill the space between the elements and extends above the top of the array if desired. The coating may be applied in multiple layers. An infrared radiation reflector is provided to form an optical cavity for receiving infrared radiation. A plurality of detector pixel structures are combined to form a focal plane array.
    Type: Grant
    Filed: November 3, 1998
    Date of Patent: December 5, 2000
    Assignee: Lockheed Martin Corporation
    Inventor: Mark A. Dodd
  • Patent number: 6153894
    Abstract: Light-emitting device with excellent emission intensity is difficult to obtain when gallium indium nitride with high indium composition ratio and poor crystallinity is employed as active layer for group-III nitride light-emitting device to emit a comparatively long wavelength light. The invention provides a light-emitting layer on a super lattice structure as a base layer, and crystallinity of the light-emitting layer is then improved. Furthermore, abruptness of a crystal composition at an interface of the light-emitting layer and an upper junction layer is achieved, thus forming a bending portion of a band structure expedient for allowing the emitting-layer to emit a light with a long wavelength.
    Type: Grant
    Filed: November 12, 1999
    Date of Patent: November 28, 2000
    Assignee: Showa Denko Kabushiki Kaisha
    Inventor: Takashi Udagawa
  • Patent number: 6153928
    Abstract: A substrate for a semiconductor package, a fabrication method for the substrate, thereof and a stacked-type semiconductor package using the substrate, and a method of making the package are disclosed. The substrate includes: an insulator having top and bottom surfaces, there being upper and lower recesses respectively formed in the top and bottom surfaces of the insulator; plural first upper and lower conductive lines respectively formed at least in part on exposed surface of the upper and lower recesses; and plural second upper and lower conductive lines respectively formed at least in part on the top and bottom surfaces and connected with corresponding ones of the first upper and lower conductive lines, respectively, the second upper and lower conductive lines extending outwardly from the upper and lower recesses, respectively.
    Type: Grant
    Filed: May 16, 1997
    Date of Patent: November 28, 2000
    Assignee: Hyuandai Electronics Industries Co., Ltd.
    Inventor: Jae Won Cho
  • Patent number: 6153893
    Abstract: An LDD structure of a thin film transistor for pixel switching is realized on a large glass substrate by low-temperature processes. A thin film semiconductor device for display comprises a display part and a peripheral driving part formed on a glass substrate (0). Pixel electrodes (9) and NchLDD-TFTs are arranged in a matrix in the display part. Thin film transistor PchTFTs and NchTFTs which constitute circuit elements are formed in the peripheral driving part. Each thin film transistor consists of a gate electrode (1), an insulating film (2) formed on the gate electrode (1), a polycrystalline semiconductor layer (3) formed on the insulating layer (2), and a high concentration impurity layer constituting a source (4) and a drain (7) formed on the polycrystalline semiconductor layer (3).
    Type: Grant
    Filed: December 12, 1996
    Date of Patent: November 28, 2000
    Assignee: Sony Corporation
    Inventors: Yuko Inoue, Yukio Kinoshita, Hisao Hayashi
  • Patent number: 6153916
    Abstract: An MOS transistor with high output voltage endurance comprises a semiconductor substrate with the surface thereof including a doping area having a surface doping concentration decreasing from the drain connection area to the drain-side edge of the gate oxide layer. This doping area is formed by ion implantation and subsequent outdiffusion of individual partial areas. The first partial area has a size in the drain-gate extension which is considerably larger than the penetration depth of the outdiffusion in the substrate. The second partial area has a size and a distance to the first partial area which are both smaller than the penetration depth of the outdiffusion in the substrate. In the outdiffused condition, the individual diffusions originating from the individual, respectively adjacent first and second partial areas merge into each other on the surface of the substrate to thus obtain a doping concentration gradient for a constant conduction type of the doping area.
    Type: Grant
    Filed: April 2, 1998
    Date of Patent: November 28, 2000
    Assignee: EL MOS Elektronik in MOS-Technologie GmbH
    Inventors: Walter Roth, Thomas Giebel
  • Patent number: 6153907
    Abstract: A specific IC layout structure for the MOSFET having a narrow and short channel, especially when the width and the length of the channel are both as small as 1 micron or less, is disclosed. In the IC layout structure, a mask includes a first mask region for defining a first active region, a second mask region for defining a second active region, and a third mask region for defining a channel region, and the third mask region is connected to the first and the second mask regions, respectively. An angle at an joint between the first mask region and the third mask region and/or an angle at an joint between the second mask region and the third mask region are/is greater than 90 degrees so that there is more space beside the channel region provided for the growth of the field oxide. Thus a 3-D oxidation thinning effect can be prevented and the properties of the MOSFET having a narrow and short channel can be stabilized.
    Type: Grant
    Filed: December 21, 1998
    Date of Patent: November 28, 2000
    Assignee: Mosel Vitelic Inc.
    Inventors: Chih-Yao Huang, C.-C. Cheng, Huey-Jong Wu
  • Patent number: 6150195
    Abstract: The invention includes a method for assembling an integrated circuit package. In the method, a substrate is presented. Next, an integrated circuit may be mounted to the substrate. A retaining structure is presented that is shaped as a mesh that is at least one of a hexagonal mesh, a triangular mesh, and an irregular shaped mesh. The retaining structure is then impregnated with a thermal grease to form a heat pipe. The heat pipe is trimmed to the perimeter of the top surface so that the heat pipe does not extend into the at least one corner of the top surface. The heat pipe is placed on the top surface of the integrated circuit. A thermal element is then placed on the impregnated retaining structure.
    Type: Grant
    Filed: July 16, 1999
    Date of Patent: November 21, 2000
    Assignee: Intel Corporation
    Inventors: Chia-Pin Chiu, Nadir Sharaf, Gary Solbrekken, Correy D. Cooks
  • Patent number: 6150716
    Abstract: A package for mounting an integrated circuit chip to a circuit board or the like is provided. The package includes a chip carrier which has a metal substrate including first and second opposed faces. A dielectric coating is provided on at least one of the faces, which preferably is less than about 20 microns in thickness, and preferably has a dielectric constant from about 3.5 to about 4.0. Electrical circuitry is disposed on the dielectric coating, said circuitry including chip mounting pads, connection pads and circuit traces connecting the chip mounting pads to the connection pads. An IC chip is mounted by flip chip or wire bonding or adhesive connection on the face of the metal substrate which has the dielectric coating thereon. In any case, the IC chip is electrically connected to the chip mounting pads either by the solder ball or wire bond connections.
    Type: Grant
    Filed: January 15, 1997
    Date of Patent: November 21, 2000
    Assignee: International Business Machines Corporation
    Inventors: Stephen Wesley MacQuarrie, Wayne Russell Storr, James Warren Wilson
  • Patent number: 6150711
    Abstract: A multi-layer plated lead frame is provided. The lead frame has a structure in which a first precious metal plating layer, an intermediate plating layer, and a second precious metal plating layer are sequentially formed on a substrate made of ferroalloy. The lead frame shows improvement in all properties including wire bonding, anti-corrosion, and solderability.
    Type: Grant
    Filed: February 19, 1998
    Date of Patent: November 21, 2000
    Assignee: Samsung Aerospace Industries, Ltd
    Inventors: Joong-do Kom, Young-ho Baek, Kyung-soon Bok
  • Patent number: 6150186
    Abstract: Deposition of metal in a preferred shape, including coatings on parts, or stand-alone materials, and subsequent heat treatment to provide improved mechanical properties. In particular, the method gives products with relatively high yield strength. The products often have relatively high elastic modulus, and are thermally stable, maintaining the high yield strength at temperatures considerably above C. This technique involves depositing a material in the presence of a selected additive, and then subjecting the deposited material to a moderate heat treatment. This moderate heat treatment differs from other commonly employed "stress relief" heat treatments in using lower temperatures and/or shorter times, preferably just enough to reorganize the material to the new, desired form. Coating a shape and heat treating provides a shaped deposit with improved material properties.
    Type: Grant
    Filed: December 22, 1998
    Date of Patent: November 21, 2000
    Assignee: FormFactor, Inc.
    Inventors: Jimmy Kuo-Wei Chen, Benjamin N. Eldridge, Thomas H. Dozier, Junjye J. Yeh, Gayle J. Herman
  • Patent number: 6147364
    Abstract: A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of N.sub.bg1 cm.sup.-3, the single-crystal layer being provided near the substrate and having a thickness of d.sub.1 .mu.m, and a semiconductor layer consisting mainly of Ga.sub.1-x Al.sub.x N having an Al composition x of at least 0.02 and not higher than 1 and having a thickness of d.sub.2 .mu.m. The single-crystal layer is situated between the substrate and the semiconductor layer, and Mg is added to the semiconductor layer at a concentration of N.sub.Mg cm.sup.-3. The Al composition x, the concentration N.sub.Mg, the concentration N.sub.bg1, the thickness d.sub.1 and the thickness d.sub.2 have the following relationshipd.sub.1 /(1600.times.x)<d.sub.2 <3.6.times.10.sup.-3 .times.logN/(x+0.02)+0.02wherein when N.sub.Mg >N.sub.bg1, N cm.sup.-3 =N.sub.Mg -N.sub.bg1, and when N.sub.Mg .ltoreq.N.sub.
    Type: Grant
    Filed: November 20, 1998
    Date of Patent: November 14, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuhiko Itaya, Hidetoshi Fujimoto, Johji Nishio, Mariko Suzuki, Lisa Sugiura
  • Patent number: 6147387
    Abstract: An SRAM is provided with a high-resistance element for loading including a high-resistance portion, which extends onto adjacent memory cell. An interlayer insulating film is formed between the high-resistance portions.
    Type: Grant
    Filed: July 16, 1998
    Date of Patent: November 14, 2000
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Yoshiyuki Ishigaki
  • Patent number: 6147365
    Abstract: An optoelectronic semiconductor component has a radiation-emitting active layer sequence which is associated with at least one poorly dopable semiconductor layer of a first conductivity type. A heavily doped first degenerated junction layer of a first conductivity type and a heavily doped second degenerated junction layer of a second conductivity type opposite to the first conductivity type are provided between the poorly dopable semiconductor layer and a contact layer of the semiconductor body, the contact layer being associated with the poorly dopable semiconductor layer.
    Type: Grant
    Filed: August 2, 1999
    Date of Patent: November 14, 2000
    Assignee: Infineon Technologies AG
    Inventors: Frank Fischer, Thomas Litz, Hans-Jurgen Lugauer, Markus Keim, Thierry Baron, Gunter Reuscher, Gottfried Landwehr