Abstract: A method of preparing films having the formula A.sup.IIB B.sup.VIA wherein A.sup.IIB is a group IIB metal and B.sup.VIA is a chalcogenide by the photolysis or low temperature thermolysis of an organo-metallic compound containing the targeted A.sup.IIB B.sup.VIA elements is provided. Organo-metallic compounds utilized in the method are of the general formulas R-X-M-X-R', R-M-X-M-R', R-M-X-R', R-M-CH.sub.2 -X-R', R-M-X-X-R' wherein R and R' are hydrogen, an alkyl, an aryl or an organic radical containing a heteroatom, M is a group IIB metal and X is a chalcogenide. Photolysis is carried out with an ultraviolet, visible or infrared light source. The films are useful in the manufacture of semiconductor elements and optical coatings.

Abstract: Disclosed is a method of coating a substrate with an amorphous metal comprising the step of bombarding a solid piece of the metal with ions of an inert gas in the presence of a magnetic field to provide a vapor of the metal which is deposited on the substrate at a sufficiently low gas pressure so that there is formed on the substrate a thin, uniformly thick, essentially pinhole-free film of the metal.

Abstract: An optical data storage system is contemplated, one employing a data-modulated writing laser beam and a nonerasing reading laser beam of predetermined wavelength.Improved optical media for such systems are described, these characterized by multiple layers whose optical characteristics and thickness are chosen to accommodate a prescribed writing and reading energy and wavelength and so provide an "anti-friction" condition for unrecorded portions of the medium and a relatively higher reflectivity for recorded portions. A preferred optical medium includes a highly reflective aluminum layer, a relatively transparent polymer spacer layer overlying the reflective layer, and an optical absorber (recording) layer overlying the spacer layer.Overcoating structure is specified in some detail; e.g., as a "soft pad" layer (e.g., fluoropolymer) on the absorber, with a "Hard" layer (e.g., radiation-cured acrylic) laid over the "soft pad" as an outer protective overcoat.

Abstract: A method of fabricating a radiant energy collector is disclosed wherein a substrate is coated on at least a portion of the surface to be exposed to radiant energy, with polyimide then surface-textured employing known procedures, e.g., plasma etching, reactive ion etching or a combination of these techniques, to impart to the coated surface high absorptivity and low emissivity for radiant energy.

Abstract: A method for fabricating optical waveguides and other optical devices. Nitrogen ions are implanted by ion bombardment in a substrate composed of silicon dioxide. Damage to the atomic structure caused by the bombardment is removed by annealing to obtain a low-loss device. The chemical interaction of the nitrogen ions with the silicon dioxide creates an implanted region having an increased index of refraction, which implanted region retains the increased refractive index after annealing.

Abstract: This disclosure is concerned with a method of transfer-coating electron-beam-curable materials, by applying such materials to the surface of a cooled drum, either through a sheet or web carrying the same over the drum or from the drum surface itself, curing the material against the drum at a region of electron-beam radiation directed thereupon and releasing the cured material from the drum surface; and with the latter, where desired, reflecting radiation back into the material being cured.

Abstract: The continuous production of solar cells by the glow discharge (plasma) deposition of layers of varying electrical characteristics is achieved by advancing a substrate through a succession of deposition chambers. Each of the chambers is dedicated to a specific material type deposition. The chambers are mutually isolated to avoid the undesired admixture of reaction gases therebetween. Each plasma deposition is carried out in its glow discharge area, chamber, or chambers, with isolation between the plasma regions dedicated to different material types. Masking, mechanical or lithographic, can be employed relative to the substrate to cause the deposition in the desired configuration. After the semiconductor deposition is complete, top contact and anti-reflection layer or layers are deposited, followed by a protective lamination.

Abstract: Designed tailormade nonequilibrium synthetic disordered materials are provided containing nonperiodically distributed local environments whose position and type are controlled to obtain specific properties which can be coupled or decoupled one from another and collectively from the constraints implied by an ordered structure. Atoms or groups of atoms can be placed in the matrix in specific designed positions to compensate the spins to obtain unusual physical and chemical properties. The compositional variation which produces the required nonequilibrium "multi-disordered" materials is accomplished by selectively depositing desired atoms and groups of atoms into designed locations to permit the construction of a true three-dimensionally engineered material. Where order is an engineering need, it can be designed in a local scale or interspersed in varying amounts including layers through the material to create new material functions.

Abstract: A ferromagnetic film for magnetic recording comprises a copper substrate having particles of iron and iron oxides dispersed in the surface layer of the copper. The particles have maximum dimensions in the range between 50 and 500 Angstroms. The ferromagnetic film can be formed by ion implantation of iron ions into the copper substrate followed by heat treatment to permit growth of ferromagnetic particles to the desired size. As an alternative to ion implantation, the iron can be deposited on the copper substrate by sputtering or evaporation and mixed with the copper by ion beam mixing.

Abstract: Arc metal spraying is used to spray liquid metal onto an array of high strength fibers that have been previously wound onto a large drum contained inside a controlled atmosphere chamber. This chamber is first evacuated to remove gaseous contaminants and then backfilled with a neutral gas up to atmospheric pressure. This process is used to produce a large size metal matrix composite monotape.

Abstract: A process for making amorphous semiconductor alloy films and devices at high deposition rates utilizes microwave energy to form a deposition plasma. The alloys exhibit high quality electronic properties suitable for many applications including photovoltaic applications.The process includes the steps of providing a source of microwave energy, coupling the microwave energy into a substantially enclosed reaction vessel containing the substrate onto which the amorphous semiconductor film is to be deposited, and introducing into the vessel reaction gases including at least one semiconductor containing compound. The microwave energy and the reaction gases form a glow discharge plasma within the vessel to deposit an amorphous semiconductor film from the reaction gases onto the substrate. The reactions gases can include silane (SiH.sub.4), silicon tetrafluoride (SiF.sub.4), silane and silicon tetrafluoride, silane and germane (GeH.sub.4), and silicon tetrafluoride and germane.

Abstract: An improved method of and apparatus for depositing thin films, such as indium tin oxide, onto substrates, which deposition comprises one step in the fabrication of electronic, semiconductor and photovoltaic devices. The method includes the novel steps of combining the use of (1) an electron beam to vaporize a source of solid material, and (2) electromagnetic energy to provide an ionizable plasma from reactant gases. By passing the vaporized solid material through the plasma, it is activated prior to the deposition thereof onto the substrate. In this manner, the solid material and the reactant gases are excited to facilitate their interaction prior to the deposition of the newly formed compound onto the substrate.

Abstract: Disclosed is a process for the preparation of an electron beam curing gypsum panel which comprises subjecting a hydrated gypsum slurry containing or free of an additive, fibrous material, fine aggregates, water, etc. to defoaming, setting and drying to form a gypsum substrate, coating an electron beam curing resin composition on the surface of the gypsum substrate to form a coated film, and irradiating accelerated electron beam on the coated film thereby to be cured.

Abstract: A method of constructing a thin electroluminescent lamp assembly comprising forming a UV curable dielectric matrix by loading nonencapsulated particles of electroluminescent phosphor into a UV curable dielectric composition, depositing a coating of such composition over the surface of a transparent conductor, curing such composition by exposure to ultraviolet light in a substantially inert atmosphere, interposing a coating of a silver conductive material in the form of a band about the periphery of the transparent conductor to form an electrical bus bar with the band having an elongated section of the same composition extending therefrom to form a first electrical lead, curing said band and electrical lead, superimposing a conductive coating over the surface of the UV curable dielectric composition with the conductive coating having an elongated section extending therefrom to form a second electrical lead laterally spaced apart from the first electrical lead, curing the conductive coating and second electrica

Abstract: An improved method for making conductive metal patterns involving the steps of treating a substrate with a solution comprising a reducible salt of a non-noble metal and a light radiation sensitive reducing compound, exposing said substrate to light radiant energy, fixing with a solution comprised of a complexing agent followed by electroless deposition, the improvement comprising extending the bath life of said fixing solution by maintaining the concentration of the light sensitive reducing compound on the fixing solution so that it does not exceed 0.4 m moles/liter.

Abstract: A method and apparatus for vapor depositing node-free coatings on substrate surfaces, without altering the pre-coating substrate surface dimension, are disclosed. A gaseous plasma (50) is generated within an evacuated deposition chamber (20) from a source (40) of coating material. The plasma generation is preferably performed by electric arc vapor deposition techniques. Means, preferrably a shield (60), are disposed in the chamber to intercept a portion of the plasma stream and to define a shadow region (60') that is substantially void of plasma particles traveling in a line-of-sight path from the source (40). Substrate(s) (30) to be coated are placed within the shadow region and are coated by that portion of the plasma diffusing into the shadow region. The substrates may be biased to ionically attract plasma ions. The shield (60) can be heated by ion bombardment of the plasma and positioned to heat the substrates by radiation. The shield may be electrically biased to enhance the coating operation.

Abstract: The electron beam curing of ethylenically unsaturated coating compositions can be accelerated by the addition of sterically hindered amines. These amines are at the same time light stabilizers for the cured coating. 2,2,6,6-Tetraalkylpiperidine derivatives are examples of such amines. If a UV absorber is added to the coating compositions in addition, a synergistic increase in the light-stabilizing effect occurs.

Abstract: A plasma arc spray overlay of cladding metals is used over joints between clad metal pieces to provide a continuous cladding metal surface. The technique permits applying an overlay of a high melting point cladding metal to a cladding metal surface without excessive heating of the backing metal.

Abstract: This invention relates to a process for forming thin insulator films on conductive or semiconductive substrates in a gas plasma and more particularly relates to a process for the growth of such thin insulating films wherein the rate of insulator growth on one surface of a substrate is controlled by predepositing specific amounts of insulating films such as silicon dioxide or silicon nitride on the other surface of the substrate. Substrates with predeposited insulators form insulating films much more slowly in a gas plasma than bare substrates and, after an initial fast growth phase, the insulator thickness reaches a steady growth phase. Because of the resulting slower rate of insulator formation, control of the desired insulator thickness is easy and it is even easier if the desired insulator thickness is close to the steady growth phase.

Abstract: A flat film can be formed on a functional structure having uneven surface formed on a semiconductor substrate firstly by applying a film-forming organic material capable of being cured by energy beams and exhibiting fluidity by heat on the uneven surface of the functional structure. Then, the organic material is fluidized by applying heat to the applied organic material, thereby substantially flattening the surface of the organic material. Energy beams are irradiated to the flattened organic material to cure the flattened organic material, thereby converting the flattened organic material into a cured film which is not deformed by heat and energy beams.