Abstract: Novel fire-retardant and hydrolysis resistant, liquid, photosensitive compositions are disclosed comprising(1) the reaction product of(a) an aliphatic unsaturation containing chlorendate, and(b) a non-ester containing polythiol, said (a) and (b) being reacted non-stoichiometrically;(2) a member of the group consisting of either (a) or (b) in an amount up to that sufficient to react with the excess of the other in (1) and a liquid acrylate monomer or oligomer, and(3) at least one photoinitiator.Acrylates or methacrylate monomers are optionally added to the composition.

Abstract: Methods of coating metallic substrates with continuously graded metallic-ceramic material are disclosed. The method maintains low stress to strength ratios across the depth of the graded layer when the graded layer is under subsequent operative conditions. In one particular structure, the coating is applied to a metal substrate and includes a metallic bond coat a continuously graded metallic-ceramic layer and an outer layer of abradable ceramic material. Modulation of the metal substrate temperature during the coating process establishes a desired residual stress pattern in the graded layer.

Abstract: A coating composition applied to a substrate by a thermal spray process which comprises tungsten carbide and a boron-containing alloy or a mixture of alloys with a total composition of from about 6.0 to 18.0 weight percent boron, 0 to 6 weight percent silicon, 0 to 20 weight percent chromium, 0 to 5 weight percent iron and the balance nickel; the tungsten carbide comprising about 78 to 88 weight percent of the entire composition.

Abstract: A photo-chemical vapor deposition of a silicon nitride (Si.sub.3 N.sub.4) film which includes the step of irradiating a gas mixture of monosilane (or polysilane) and ammonia (NH.sub.3) or hydrazine (N.sub.2 H.sub.4) gas but without mercury vapor by ultraviolet light having a wavelength of 200 nm (or 300 nm) or less to deposit the silicon nitride (Si.sub.3 N.sub.4) film having a charge density of 1.times.10.sup.11 cm.sup.-2 or less on a substrate held at 100.degree.-500.degree. C. in a reaction chamber held under a pressure of 0.1 to 10 Torr.

Abstract: A low-temperature process for forming a thin film of an aromatic polymer on the surface of a substrate by exposing the substrate to a monomer precursor containing arylene groups in the presence of radiation of a selected wavelength. Upon radiation inducement, the monomer units interact to form a polymer comprising directly bonded repeating arylene groups, and the polymer deposits as a layer on the substrate. Optionally, the polymer layer may be simultaneously or subsequently doped to provide a conductive polymer layer. Specifically disclosed polymers are polyparaphenylene and its antimony pentafluoride-doped derivative. The former is useful as a dielectric insulator or passivation material in semiconductor devices and circuits, while the latter is useful in batteries and solar cells, or electromagnetic shielding.

Abstract: A process for the reduction of defect formation in conductive layers of semiconductor bodies during patterning, alloying and passivation. A film of low temperature spin-on-glass containing dye is formed on the conductive layer prior to patterning and any high temperature process greater than 200 degrees C. Hermetic passivation is achieved by depositing on the conductive layer a composite film consisting of a lower, tensile layer and an upper, compressive layer with the net force of the passivation film being tensile.

Abstract: This invention relates to apparatus and methods for laser induced vapor deposition upon a substrate. The invention includes apparatus isolated from the deposition chamber for preheating the substrate before deposition. A bellows arrangement permits adjustment of the heat applied to the substrate.

Abstract: Novel constituent materials for gas sensors detecting gaseous impurities in air contain metal oxides and catalyst additives. The materials are prepared by mixing a colloidal solution A of an oxide or a hydroxide of at least one metal selected from the groups Ib, IIa, IIb, IIIa, IIIb, IVa, IVb, Va, Vb, VIa, VIb, VIIb, VIII and the lanthanides and actinides of the periodic system with a solution B containing a salt or a complex compound of at least one metal selected from the group: lanthanum, chromium, manganese, iron, cobalt, nickel, copper, ruthenium, iridium, palladium, platinum, rhodium, osmium, silver, gold, antimony, bismuth, thorium, and irradiating the mixture thus obtained with light of the visible and ultraviolet spectral region in order to photochemically deposit the metal in finely distributed form on the metal oxide or metal hydroxide, respectively.

Abstract: A laser powered chemical vapor deposition process and apparatus for producing heterogeneous nucleation and sustained growth of films on substrates. The process is conducted at low laser intensities and high reactant pressures so as to operate in the thermal domain. Semiconductor films and fabrication of fiber optic waveguides are illustrated in the process.

Abstract: Plasma spray coating of parts in a low-pressure chamber utilizes a linear induction motor drive system having gapped tracks for supporting and driving part carriers to flow in a continuous series of discrete steps through the low-pressure chamber where the parts are momentarily stopped for preheating and spray coating. Input and output air locks are sealed and unsealed by valve gates that move through the track gaps to optimize the sealing of the locks.

Abstract: In a method and apparatus for continuous plasma CVD deposition in and through a vacuum system, box carriers are provided to carry both the substrates and the plasma exciting electrodes through the system. Contamination of the system and cross doping of the applied coatings are reduced.

Abstract: A process for forming a self-aligned resist mask over a surface of an alumina ceramic substrate having a conductive molybdenum pattern at said surface by first blanket coating the surface with a negative resist sensitive to aluminum emitting X-rays. A blanket dosing of the substrate with resist insensitive X-rays occurs to induce X-ray emission by the aluminum of said substrate to penetrate said resist. The aluminum X-ray emission is screened by said molybdenum pattern at the surface and the resist adjacent the surface molybdenum pattern is penetrated by the aluminum X-ray emission. The resist is developed for removal thereof over the molybdenum pattern while retaining the resist doped by said aluminum X-ray emission. Further metalization can be accomplished by evaporation or sputtering to blanket coat the developed resist with a conductive metal followed by removal of the resist with the metal coating thereon such that the metal coating is retained on the molybdenum pattern.

Abstract: A process for preparing a semiconductor wafer having one region including impurities at a concentration of more than 5.times.10.sup.16 cm.sup.-3 therein, in which an energy beam is radiated onto this one region of the semiconductor wafer in order to form small defects therein and out diffuse the impurities, respectively. Thereby, a region including no small defects is formed in a surface region of the semiconductor wafer and another region including many defects is formed in an internal region of the semiconductor wafer.

Abstract: Metal-working dies which are typically made of steel are provided with substantially enhanced life by receiving a plasma-sprayed refractory metal coating which is subsequently compacted under conditions of minimum shear stress. The number of working cycles which can be obtained from a die before it is necessary to rework the die can be improved by as much as 3500%.

Abstract: A process for forming a deposition film, wherein a gaseous atmosphere of a silicon compound selected from(i) a silicon compound having at least one azo group directly bonded to a silicon atom and(ii) a silicon compound having at least one azide group directly bonded to a silicon atomis formed in a deposition chamber in which a substrate is placed, said compound is excited and decomposed utilizing light energy, and a deposition film containing silicon atoms is formed on said substrate.A compound containing atoms of a group III element or a group V element of the Periodic Table may be included in the atmosphere in the deposition chamber, the compounds excited and decomposed utilizing light energy, and a deposition film containing silicon atoms and the atoms in the group III or V element of the Periodic Table formed on said substrate.

Abstract: Disclosed is a coated steel article, e.g., a stainless steel article, having a corrosion resistant coating of disordered silicon carboxynitride over at least a portion of the steel surface. Also disclosed is a method of forming an adherent, ductile, disordered silicon carboxynitride coating on a steel substrate by glow discharge deposition.

Abstract: A wear-resistant wood product such as a wood flooring material having a white or bleached appearance which is obtained by impregnating wood with a solution of a polymeric resin whitening agent in a polymerizable monomer such as methylmethacrylate and, after uniform distribution of the monomer solution throughout the wood is obtained, the monomer is polymerized and the whitening agent precipitated in situ in the polymer matrix as a material having a refractive index sufficiently different from the refractive index of said matrix to impart a bleached or white appearance to said product.

Abstract: An optical fibre is provided with a moisture barrier layer by exposing a plastics coating on the fibre to a pulsed plasma in order to modify the surface, for instance by implantation of silicon and/or by the deposition on the plastics layer an inorganic layer such as a non-stoichiometric composition of silicon and carbon or silicon and nitrogen.

Abstract: A method of producing a semiconductor laser device, comprisingdepositing a first cladding layer, an active layer, and a second cladding layer successively, which three layers having heterojunctions each between neighboring two layers, said first and second cladding layers being made of mixed crystals of a semiconductor material composing the active layer and another semiconductor material containing aluminum,depositing a fourth thin semiconductor layer on the second cladding layer, said fourth layer being made of material not including aluminum, and having charge carriers of the same type with that of the second cladding layer,depositing a fifth semiconductor layer on said fourth layer, said fifth semiconductor layer having charge carriers of the type opposite to that of the second cladding layer,forming a stripe-like groove by etching in said fifth semiconductor layer down to said fourth semiconductor layer, anddepositing a sixth semiconductor layer on said fifth semiconductor layer and on said groove, said

Abstract: A silicon crucible for use in holding a silicon melt in the drawing of silicon bars for the production of silicon wafers in the semiconductor industry is provided with a protective coating, e.g. of silicon nitride, by the use of a vapor generator in which granules of a low electrical conductivity and low thermal conductivity material are disposed between a pair of electrodes and an electric current is supplied with induces localized vaporization from the granules at their contact points but without bodily melting the granules. Nitrogen can be applied to the mass as a carrier gas and to react with the silicon vapor thus formed.