Patents Examined by John H. Newsome
  • Patent number: 4693211
    Abstract: A surface treatment apparatus is composed of a supporting die for holding a substrate thereon to heat or cool the substrate; a cover capable of advancing close to the supporting die or into point-to-point contact with the supporting die to define a treatment space over the entire upper surface of the substrate on the supporting die, said cover defining a hole for the introduction of a surface treatment agent into the treatment space; and an evacuation chamber provided on the peripheral side wall of the supporting die, whereby the surface treatment agent is allowed to flow out from the treatment space into the evacuation chamber. No substantial conduction of heat takes place from the supporting die by way of the cover. The thermal distribution of the supporting die is thus kept extremely uniform, whereby each surface treatment can be conducted uniformly.
    Type: Grant
    Filed: December 18, 1985
    Date of Patent: September 15, 1987
    Assignee: Dainippon Screen Mfg. Co., Ltd.
    Inventors: Nobutoshi Ogami, Masaru Kitagawa
  • Patent number: 4690831
    Abstract: An article for protecting a substrate includes a preshaped member having a shape similar to that of the substrate being protected, the article having a thin layer of gel disposed in intimate contact with an inner surface of the member such that the gel is disposed in intimate contact with the substrate when the member is disposed therearound. Preferably, the gel comprises an open looped three-dimensional network, the gel being relatively soft, elastic, and having an ultimate elongation in excess of 100%.
    Type: Grant
    Filed: June 18, 1986
    Date of Patent: September 1, 1987
    Assignee: Raychem Corp.
    Inventors: William D. Uken, Robert S. Dubrow, Carib Nelson, Catherine A. Dittmer
  • Patent number: 4690830
    Abstract: Compounds having the formula (MX.sub.3).sub.n M'X.sub.4-n wherein M and M' are different Group 4A atoms, at least one of M and M' is silicon, X is hydrogen, halogen or mixtures thereof, and n is an integer between 1 and 4, inclusive, can be activated by dehydrogenation or dehalogenation. These compounds are useful as deposition feedstock materials in the formation of hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.Dopants having the formula (SiX.sub.3).sub.m L X.sub.3-m wherein L is a Group 5A atom selected from the group of phosphorus, arsenic, antimony and bismuth, X is hydrogen, halogen or mixtures thereof and m is an integer between 1 and 3, inclusive, can be activated by dehydrogenation or dehalogenation. These compounds are useful in the fabrication of negatively-doped hydrogenated amorphous silicon alloys useful in the fabrication of photovoltaic and other electronically active devices.Dopants having the formula YJX.sub.
    Type: Grant
    Filed: February 18, 1986
    Date of Patent: September 1, 1987
    Assignee: Solarex Corporation
    Inventors: Charles R. Dickson, David E. Carlson
  • Patent number: 4689212
    Abstract: An optical fiber preform is formed by plasma chemical vapor deposition utilizing a plasma torch that includes a chamber into which a plasma starting gas, such as argon, is introduced and converted to a plasma by application of high frequency electromagnetic energy. A suitable entry port is provided in the torch chamber to allow dopant material in solid form to be introduced directly into the plasma for vaporization or ionization. The dopant material passes into a lower temperature region where gaseous silica precursor gases are introduced to undergo reaction in the presence of the vaporized dopant to form appropriately doped silica particles for deposition onto a substrate. Solid dopants of low volitility or vapor pressure may be used as dopants which could not otherwise be used in vapor deposition processes. The absence of hydrogen in the reaction dynamics results in a preform having greatly reduced hydroxyl ion content.
    Type: Grant
    Filed: May 14, 1986
    Date of Patent: August 25, 1987
    Assignee: Polaroid Corporation
    Inventor: Robert J. Mansfield
  • Patent number: 4689242
    Abstract: Metal coated ceramic particles are bonded to a metallic substrate in a high temperature sintering process. A low viscosity binder solution containing fine metallic particulates is first applied to the substrate surface. Then, the coated ceramic particles are disposed upon the substrate surface, and the binder solution and the metal particulates therein are attracted by capillarity into regions of point contact between the ceramic particles and the substrate surface. During a subsequent high temperature sintering operation, the metal coating on the ceramic particles diffuses into the metal substrate, and the metallic particulates melt and solidify to bridge the gap between the substrate and ceramic particles.
    Type: Grant
    Filed: July 21, 1986
    Date of Patent: August 25, 1987
    Assignee: United Technologies Corporation
    Inventor: Roscoe A. Pike
  • Patent number: 4687678
    Abstract: Production of high temperature materials with coatings being resistant to high temperature corrosion by forming a dual phase structure of corrosion resistant metal alloy and metal oxides. The metal oxides function as barriers for the diffusion of alloy elements, heat diffusion and electric conductivity. The result can be further enhanced by hot isostatic pressing of the coating and the use of tantalum as barrier layer, where the functioning of tantalum is the result of the low diffusion speed of tantalum in nickel base alloys.
    Type: Grant
    Filed: November 25, 1985
    Date of Patent: August 18, 1987
    Inventor: Yngve S. Lindblom
  • Patent number: 4686111
    Abstract: Passivated and low scatter acoustic wave devices comprise surface acoustic wave (SAW) and shallow bulk acoustic wave (SBAW) devices having transducers composed of oxidizable metal and layers of metal oxide on conventional acoustic wave substrates. Passivated transducers are achieved by forming a layer of oxide on an existing transducer. The method may be used to passivate a device packaged in a non-oxidizable package with oxidizable wire leads, thus combining complete protection with efficient manufacturing operations. Low scatter SAW transducers are achieved by forming the transducer and the interstitial insulating layer from a single layer of oxidizable metal by means of masking and oxidation operations.
    Type: Grant
    Filed: February 13, 1984
    Date of Patent: August 11, 1987
    Assignee: Motorola, Inc.
    Inventors: Frederick Y. Cho, Fred S. Hickernell
  • Patent number: 4684537
    Abstract: A photocatalyst for photodecomposition of liquids is sensitized to visible light by chemically bonding to the catalyst a complex of a transition metal with a bipyridyl or phenanthrolyl type ligand.
    Type: Grant
    Filed: December 27, 1985
    Date of Patent: August 4, 1987
    Assignee: R. E. Stiftung
    Inventors: Michael Graetzel, Nick Serpone, Dung Duonghong
  • Patent number: 4683144
    Abstract: A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1) and a halogen compound in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form the deposited film containing silicon atoms on said substrate.A method for forming a deposited film comprises forming a gaseous atmosphere of a silane compound represented by the general formula: Si.sub.n H.sub.2n+2 (n.gtoreq.1), a halogen compound and a compound containing atoms belonging too the group III or the group V of the periodic table in a deposition chamber in which a substrate is arranged, and exciting and decomposing these compounds by utilization of photoenergy thereby to form a deposited film containing silicon atoms and the atoms belonging to the group III or the group V of the periodic table on said substrate.
    Type: Grant
    Filed: April 11, 1985
    Date of Patent: July 28, 1987
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yukuo Nishimura, Ken Eguchi, Hiroshi Matsuda, Masahiro Haruta, Yutaka Hirai, Takashi Nakagiri
  • Patent number: 4683147
    Abstract: A method of forming a silicon-containing film deposited on a substrate, which comprises the steps of forming a gaseous atmosphere of at least one silicon compound selected from the group consisting of compounds represented by general formulas (A), (B), (C), (D), (E) and (F) in a deposition chamber containing the substrate, and applying light energy to the compound to exite and decompose the compound. The compounds of the general formulas (A)-(F) are defined below: (A) Si.sub.n H.sub.m X.sub.l (wherein X is a halogen atom, n is an integer of not less than 3, and m and l are integers of not less than 1, respectively, m+l=2n; if l is an integer of not less than 2, a plurality of X's may represent different halogen atoms) representing a cyclic silicon compound; (B) Si.sub.a X.sub.2a+2 (wherein X is a halogen atom and a is an integer of 1 to 6) representing a chain halogenated silicon compound; (C) Si.sub.b X.sub.
    Type: Grant
    Filed: April 12, 1985
    Date of Patent: July 28, 1987
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ken Eguchi, Hiroshi Matsuda, Masahiro Haruta, Yukuo Nishimura, Yutaka Hirai, Takashi Nakagiri
  • Patent number: 4683145
    Abstract: A method of forming a deposited film comprises forming a gaseous atmosphere of at least one silicon compound selected from those having the formula (A), (B) or (C) as shown below in a deposition chamber in which a substrate is arranged, and exciting and decomposing said compound by utilization of light energy thereby to form a desired film containing silicon atoms on said substrate: ##STR1## wherein l represents 3, 4 or 5; and R represents H or SiH.sub.3 ; ##STR2## wherein R.sup.1 and R.sup.2 independently represent H or an alkyl group having 1 to 3 carbon atoms; m an integer of 3 to 7; and n an integer of 1 to 11;R.sup.1 --(Si.multidot.R.sup.2 R.sup.3).sub.p --R.sup.4 (c)wherein R.sup.1 and R.sup.4 independently represent a phenyl or naphthyl group which may be substituted with halogens, or an alkyl group having 1 to 11 carbon atoms; R.sup.2 and R.sup.3 independently represent H or CH.sub.3 ; and p represents an integer of 3 to 7.
    Type: Grant
    Filed: April 11, 1985
    Date of Patent: July 28, 1987
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yukuo Nishimura, Ken Eguchi, Hiroshi Matsuda, Masahiro Haruta, Yutaka Hirai, Takashi Nakagiri
  • Patent number: 4683146
    Abstract: A process for producing deposition films is provided which comprises forming a gaseous atmosphere of at least one compound silicon hydride selected from the group consisting of;(A) straight chain silicon hydrides represented by the general formulaSi.sub.n H.sub.2n+2wherein n is an integer 4 or more;(B) cyclic silicon hydrides unsubstituted or substituted by a linear or branched silicon hydride residue which are represented by the general formulaSi.sub.m H.sub.2mwherein m is 3, 4, 5, or 6; and(C) branched chain silicon hydrides represented by the general formulaSi.sub.p H.sub.qwherein p is an integer of 4 or more and q is an interger of 10 or more;in a reaction chamber containing a substrate, and exerting light energy on the atmosphere to excite and decompose the silicon hydride, thereby a silicon-containing layer on the substrate.
    Type: Grant
    Filed: April 12, 1985
    Date of Patent: July 28, 1987
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yutaka Hirai, Hiroshi Matsuda, Ken Eguchi, Masahiro Haruta, Yukuo Nishimura, Takashi Nakagiri
  • Patent number: 4680196
    Abstract: A method is disclosed for use in the manufacture of a color cathode ray tube having a shadow mask with a pattern of minute apertures for color selection. A removable film effective to prevent particle occlusion of the apertures is disposed on at least one side of the mask. The film has an extremely small, substantially uniform thickness dimension, a low index of refraction, and is of such high transparency as to exhibit a negligible optical effect during photoscreening operations.
    Type: Grant
    Filed: April 15, 1986
    Date of Patent: July 14, 1987
    Assignee: Zenith Electronics Corporation
    Inventor: Leonard Dietch
  • Patent number: 4676993
    Abstract: A dual-coupled resonator crystal is fine-tuned by frequency balancing the input and output resonators and thereafter plating a coupling adjust spot on the grounded side shadowing the unelectroded region of the front side of the crystal to produce a change in synchronous peak separation frequency. Thereafter, the front side electrodes are sequentially plated to bring plateback and synchronous peak separation frequency to their target values. Interim adjustments in synchronous peak separation frequency may be made during the tuning process to compensate for misalignment of the plating elements.
    Type: Grant
    Filed: April 11, 1986
    Date of Patent: June 30, 1987
    Assignee: General Electric Company
    Inventors: Gerald E. Roberts, Samuel Toliver, Robert J. Crescenzi
  • Patent number: 4676995
    Abstract: Pelletized thermoplastic polymers or resins containing (--CONH--) groups such as the nylons can readily be brominated or chlorinated in organic solvents to convert the (--NH--) units to (--NBr--) or (--NCl--) units and to form solutions of the N-brominated or N-chlorinated thermoplastic polymers or resins. These N-brominated or N-chlorinated thermoplastic polymer solutions can be coated on a cellular or solid rubbery hydrocarbon polymer substrate, such as an EPDM rubber in the form of a weatherstrip or glass run channel, dried and irradiated with ultraviolet light or heated at a temperature and for a period of time sufficient to reform the amide (--CONH--) groups and to provide the rubbery substrate with an adherent and abrasion resistant coating which also exhibits reduced ice adhesion and coefficient of friction.
    Type: Grant
    Filed: February 24, 1986
    Date of Patent: June 30, 1987
    Assignee: GenCorp Inc.
    Inventors: Hubert J. Fabris, Earl G. Melby, Kohji Y. Chihara, Harry W. Cocain
  • Patent number: 4675204
    Abstract: Method of applying a protective layer to a component made of an oxide dispersion hardened superalloy in which the surface of the component is subjected to heat treatment and/or provided with a coating before the protective layer is applied. This results in improved adhesive strength of the protective layer.
    Type: Grant
    Filed: July 15, 1985
    Date of Patent: June 23, 1987
    Assignee: BBC Aktiengesellschaft Brown, Boveri & Cie
    Inventors: Andrew R. Nicoll, Lorenz Singheiser
  • Patent number: 4675234
    Abstract: An article having a radiation cured coating is formed by:(a) applying to a substrate a first layer of pigmented or unpigmented radiation curable material containing glitter particles such as metallic particles or synthetic glitter particles;(b) applying a second layer of unpigmented radiation curable material over the first layer, and(c) curing the first and second layers with ionizing irradiation or ultraviolet light, either in two steps or in a single curing step after both layers have been applied.
    Type: Grant
    Filed: May 17, 1985
    Date of Patent: June 23, 1987
    Assignee: Tarkett AB
    Inventors: Peter R. Sachs, James W. Sears
  • Patent number: 4670292
    Abstract: A method for injecting exotic atoms into a solid with electron beams comprises irradiating a material having structure of two layers to which at least one thin film adheres with electron beams, and injecting the exotic atoms into an irradiation region. This method gives desired forms such as crystal, noncrystal, solid solution of the materials, depending on the conditions of electron irradiation.
    Type: Grant
    Filed: September 16, 1985
    Date of Patent: June 2, 1987
    Assignee: Osaka University
    Inventors: Hiroshi Fujita, Naoto Sumida
  • Patent number: 4670291
    Abstract: A method of controlling supersaturated injection of exotic atoms comprises previously preparing a parent material buried by exotic phases consisting Ge or Si, irradiating the parent material with the electron beams, and forming supersaturated injection regions of the exotic atoms to control the concentration profile of the exotic atoms. The method can control the distribution of concentration of exotic atoms by irradiating with electron beams of high energy.
    Type: Grant
    Filed: September 13, 1985
    Date of Patent: June 2, 1987
    Assignee: Osaka University
    Inventors: Hirotaro Mori, Hiroshi Fujita
  • Patent number: RE32498
    Abstract: A fluorescent screen of a cathode ray tube is prepared by forming a film of photosensitive sticky substance, for example, an aqueous solution of a copolymer of a complex salt of diazonium salt and zinc chloride, oN an inner surface of a face plate of the tube, exposing the film to light to render portions thereof sticky, applying a powdery substance, for example, .[.phosphors of three colors.]. .Iadd.graphite.Iaddend., onto the film to cause the powdery substance to adhere to the portions of the film rendered sticky, removing excess powder to form a film pattern of the powdery substance, causing the substance responsible for stickiness to ooze out onto the film pattern, applying another powdery substance, for example, .[.graphite.]. .Iadd.titanium oxide .Iaddend.onto the film pattern and removing an excess of another powder substance, thus forming the fluorescent screen.
    Type: Grant
    Filed: July 5, 1985
    Date of Patent: September 8, 1987
    Assignee: Hitachi, Ltd.
    Inventors: Yoshifumi Tomita, Hiromitsu Nakai