Abstract: There is provided a photosensitive modified silicone-aromatic polyamide acid convertible to a patterned silicone-polyimide. A silicone-polyamide acid is modified with an isocyanatoalkylacrylate to produce a silicone-aromatic polyamide acid having acrylate alkylamide groups attached to the silicone-aromatic polyamide acid backbone by nitrogen-nuclear bound carbon linkages.

Abstract: An X-ray absorber layer in the form of single layer of high melting point metal such as Ta, W is formed with granular crystal grains on a mask substrate, so that an internal stress of the layer is reduced. A fine pattern is formed from the absorber layer by reactive sputter etching using CBrF.sub.3 gas as an etchant, so that an X-ray absorber pattern is formed on the mask substrate. The X-ray lithography mask thus fabricated has a fine pattern such as submicron pattern with a high degree of pattern contrast and a high dimensional accuracy.

Abstract: There is disclosed an image-formable resinous composition comprising a poly(olefinsulfone) and a matrix polymer, in which the matrix polymer being a novolac phenol resin obtained from:(1) m-cresol and p-cresol as main components, the molar ratio of m-cresol/p-cresol being within the range from 40/60 to 55/45, and(2) formaldehyde, the molar ratio of formaldehyde/(phenol or phenol derivatives) being within the range from 5/10 to 8/10.The image-formable resinous composition has a high sensitivity and a high dissolution.

Abstract: A silver halide color photographic light-sensitive material comprising a support having thereon at least one silver halide emulsion layer is described, the color photographic light-sensitive material containing a coupler having at the coupling position thereof a group represented by formula (I) ##STR1## wherein Z represents an oxygen atom or a sulfur atom; R.sub.1 and R.sub.2 each represents a halogen atom, an alkyl group, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group, a cyano group, a nitro group, a hydroxy group, a carboxy group, an alkoxycarbonyl group, an aryloxycarbonyl group, an alkylsulfonamido group, an arylsulfonamido group, an alkylsulfamoyl group, an arylsulfamoyl group, an acylamino group, an amino group, an alkylcarbamoyl group, an arylcarbamoyl group, an alkylsulfonyl group, an arylsulfonyl group, an alkylcarbonyl group or an arylcarbonyl group; X.sub.

Abstract: A photomask with white defects that have corrected with a film comprising a mixture of silver and tantalum oxide. The film has a good resistance to chemicals.

Abstract: The clearing point of photoresist development is detected automatically by illuminating the developing photoresist surface with intense monochromatic light. Interfering reflection from the resist-substrate interface and the fast eroding and slow eroding resist surfaces produces fast and slow oscillatory signals. These signals are processed to produce a logical output indicative of the cessation of the fast oscillations in the presence of the continuing slow oscillations signaling the clearing point of development.