Abstract: A sensing device comprising an electromagnetic sensor having a surface with a plurality of different electromagnetic radiation interception areas arranged one above the other, one or more controllable flaps adapted to cover one or more of the different electromagnetic radiation interception areas preventing the electromagnetic sensor from intercepting electromagnetic radiation on the covered electromagnetic radiation interception areas, at least one control mechanism adapted to maneuver the controllable flaps so as to change the covered electromagnetic radiation interception areas and a plurality of lenses located in front of the electromagnetic sensor, each having a different focal length. One of the lenses has a certain focal length and focuses electromagnetic radiation to at least one of the different electromagnetic radiation interception areas, and another of the lenses has a different focal length and focuses electromagnetic radiation to another electromagnetic radiation interception area.

Abstract: An action recognition system is illustrated. The action recognition system has an annular body, at least one light emitting unit, at least one light sensing unit and an action recognition module. The annular body is worn on a movable part of a user. One end of the light emitting unit is exposed on an inner side of the annular body, wherein the light emitting unit emits a first light beam illuminating at least a portion of the movable part. One end of the light sensing unit is exposed on the inner side of the annular body. The light sensing unit operatively senses a second light beam reflected by the at least portion of the movable part and generates a light sensing signal. The action recognition module is configured to operatively determine an action of the user according to the light sensing signal.

Abstract: An optically-controlled switch and a method therefor are provided. The optically-controlled switch includes a printed circuit board (PCB) including upper and lower layers and a dielectric layer between the upper and lower layers, a plurality of vias electrically connected to the upper and lower layers and located in at least two rows, a shunt via electrically connected to the lower layer and separated from the upper layer by a dielectric gap, and a photoconductive semiconductor element (PSE) electrically connected to the upper layer and the shunt via, wherein the PSE includes a dielectric state and a conductor state, and wherein an electromagnetic wave provided to the optically-controlled switch propagates or is blocked through a waveguide formed between the at least two rows.

Abstract: An image sensor may include imaging pixels with non-destructive readout capabilities. Each imaging pixel may include a substrate having a photosensitive area that generates charge in response to incident light. The charge may accumulate at a front side of the substrate adjacent to a floating gate. The voltage of the floating gate may depend on how much charge is accumulated. The voltage of the floating gate may be repeatedly sampled to monitor the amount of incident light received over time. A first reset transistor may clear the substrate of accumulated charge. A second reset transistor may reset the voltage of the floating gate. The imaging pixel may be split between multiple wafers if desired and may include nMOS and pMOS transistors.

Abstract: A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (HPTs) integrated in a wafer are disclosed and may include receiving optical signals via optical fibers operably coupled to a top surface of the chip. Electrical signals may be generated utilizing HPTs that detect the optical signals. The electrical signals may be amplified via voltage amplifiers, or transimpedance amplifiers, the outputs of which may be utilized to bias the HPTs by a feedback network. The optical signals may be coupled into opposite ends of the HPTs. A collector of the HPTs may comprise a silicon layer and a germanium layer, a base may comprise a silicon germanium alloy with germanium composition ranging from 70% to 100%, and an emitter including crystalline or poly Si or SiGe.

Abstract: A time-resolving sensor includes a single-photon avalanche diode (SPAD), a logic circuit and differential time-to-charge converter (DTCC) circuit. The SPAD is responsive to a shutter signal to generate an output signal based on detecting an incident photon. The logic circuit generates first and second enable signals. The DTCC includes a capacitor device, first and second switching devices, and an output circuit. The first switching device is responsive to the first enable signal to transfer a charge on the capacitor device to the first floating diffusion. The second switching device is responsive to the second enable signal to transfer a remaining charge on the capacitor device to the second floating diffusion. The output circuit outputs a first voltage that is based on the first charge on the first floating diffusion and a second voltage that is based on the second charge on the second floating diffusion.

Abstract: An image sensor includes a substrate, thin lenses disposed on a first surface of the substrate and configured to concentrate lights incident on the first surface, and light-sensing cells disposed on a second surface of the substrate, the second surface facing the first surface, and the light-sensing cells being configured to sense lights passing through the thin lenses, and generate electrical signals based on the sensed lights. A first thin lens and second thin lens of the thin lenses are configured to concentrate a first light and a second light, respectively, of the incident lights onto the light-sensing cells, the first light having a different wavelength than the second light.

Abstract: Optoelectronic devices that use very thin single-crystalline inorganic semiconductor films as phonon-absorbing layers in combination with non-lattice optical cavities are provided.

Abstract: A photoelectric conversion apparatus includes a plurality of units each including a charge generation region disposed in a semiconductor layer. Each of a first unit and a second unit of the plurality of units includes a charge storage region configured to store charges transferred thereto from the charge generation region, a dielectric region located above the charge generation region and surrounded by an insulator layer, and a first light-shielding layer covering the charge storage region that is located between the insulator layer and the semiconductor layer, and the first light-shielding layer having an opening located above the charge generation region. The charge generation region of the first unit is able to receive light through the opening of the first light-shielding layer. The charge generation region of the second unit is covered with a second light-shielding layer.

Abstract: The disclosure prevents a string-shaped elastic member from being sandwiched and held between a light transmitting plate and a frame body or the like in a twisted state. At least a part of a side wall on an outer side of a storage groove (21) is provided with a projection part (22) preventing an elastic member (4) from being twisted.

Abstract: A measurement apparatus includes: a measurement tank including an air inlet and an air outlet; a fan; a light source configured to irradiate micro-particulate matter with light; a photodetector configured to detect scattered light from the micro-particulate matter; a first circuit configured to detect individual particles of the micro-particulate matter based on an output of the photodetector; a second circuit configured to detect a micro-particle group of the micro-particulate matter based on the output of the photodetector; a switch configured to switch into one of a first state in which the output of the photodetector is input to the first circuit and a second state in which the output of the photodetector is input to the second circuit; and a controller configured to control a drive and stop of the fan, a turn-on and a turn-off of the light source, and a switching of a state of the switch.

Abstract: In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.

Abstract: An integrated microfabricated vapor cell sensor includes a transparent sensor cell body. The cell body has a cavity for a sensor fluid vapor which is covered by a first plate attached to the cell body. The sensor has a first signal path extending from a first signal emitter, through the cell body, through the cavity, through the cell body again, and to a first signal detector, and a second signal path extending through the cavity. The second signal path intersects the first signal path in the cavity. The second signal path may extend through the cell body, or may extend through the first plate. The signal emitters and signal detectors are located in the integrated microfabricated vapor cell sensor.

Abstract: A photoelectric conversion apparatus is provided. The apparatus comprises a substrate including two light receiving regions in which light receiving devices are arranged; electrode pads arranged on the substrate; and a readout circuit arranged on the substrate and configured to read out signals from the light receiving regions. The electrode pads include an output pad for outputting a signal, and a power supply pad for supplying power to the light receiving regions or the readout circuit. Each of the light receiving regions has a shape in which a first direction is taken as a longitudinal direction, the light receiving regions are arranged along a second direction with an interval therebetween, the second direction intersecting the first direction, and one or more pads of the electrode pads is sandwiched by the light receiving regions in the second direction.

Abstract: An optical detection circuit, an optical detection method and an optical detection device are provided. The circuit includes a photosensitive transistor, a resetting unit, an energy storing unit, a detection control unit and a detection unit. A threshold voltage of the photosensitive transistor varies with an intensity of an optical signal received by the photosensitive transistor. A wavelength of the optical signal is within a preset wavelength range. The detection control unit is configured to control the first node to be connected to the detection unit under control of a detection control terminal. The detection unit is connected to the first node via the detection control unit and is configured to, when the detection control unit controls the first node to be connected to the detection unit, detect an electric signal from the first node and obtain the intensity of the optical signal based on the electric signal.

Abstract: An optical sensor includes a time difference extraction circuit for extracting a time difference based on the distance to a target on the basis of a first received light pulse signal from a first light receiving unit, a reference cycle, and a second received light pulse signal from a second light receiving unit, and a determination circuit for determining whether a crosstalk value can be calculated on the basis of the time difference extracted by the time difference extraction circuit and the reference cycle.

Abstract: A CSP system including a reflector and a receiver for concentrating the solar radiation incident on the reflector onto the receiver, comprising a shadow blind and a shadow receiver as well as a colour and/or brightness digitizing sensor arranged to detect the shadow of the shadow blind on the shadow receiver in order to determine a deviation of the actual shadow position from a target shadow position, a tracking means configured to adapt the position of the reflector and the receiver according to the deviation.

Abstract: An optical detector device including: a glass substrate having conductive traces plated thereon; a semiconductor device having an optical detector exposed on a side facing the glass substrate, the semiconductor device further including a plurality of bond pads electrically coupled to a first subset of the conductive traces; a metallic seal structure bonding a side of the glass substrate having the conductive traces with the side of the semiconductor device facing the glass substrate; and a plurality of conductive structures outside of a perimeter of the semiconductor device, the plurality of conductive structures being electrically coupled to a second subset of the conductive traces.

Abstract: Methods and apparatus for variable time sampling of optical pulses by a unit cell are disclosed. The methods may include detecting whether an amplitude of an optical pulse incident on one or more photo-detecting elements exceeds a sampling threshold, and while the pulse amplitude remains above the sampling threshold, iteratively sampling the optical pulse at a sampling rate that varies based on changes in the pulse amplitude.

Abstract: A sensor configured to detect displacement of a rotation angle of a shaft due to a rotation or a turn of the shaft, the sensor includes: a bearing rotatably supporting the shaft; and a housing including a bearing hole to which the bearing is fixed. The shaft and an inner circumferential surface of the bearing are fixed to each other by an adhesive agent, and an outer circumferential surface of the bearing and an inner circumferential surface of the bearing hole of the housing are fixed to each other by an adhesive agent.