Abstract: Apparatus and related methods are provided for evaluating effectiveness of a visual augmentation system (VAS), such as night vision goggles (NVGs). The apparatus and methods illustratively measure the response time of the visual augmentation system (VAS) as a function of targeting detection, engagement, and scan angle.

Abstract: The present disclosure provides an optoelectronic module. In one aspect, the optoelectronic module includes an insertion member including a housing insert and an imager disposed in the housing insert, and a receiving member including an interposer, a housing disposed on the interposer, and an optoelectronic device electrically connected to said interposer. The housing of the receiving member is configured to engage and receive the housing insert of the insertion member. The optoelectronic device of the receiving member is configured to align with the imager of the insertion member.

Abstract: Provided is a photoelectric encoder that can achieve higher accuracy while maintaining reliability by reducing stray light. An encoder 1 is a photoelectric encoder including a light source device 2 that emits parallel light, a scale 3 having calibrations C provided along a measurement direction, and a light receiving unit 4 that receives light being emitted from the light source device 2, and transmitted through the scale 3. The encoder 1 includes an antireflection member 30 that prevents stray light generated by being reflected on the scale 3, from entering the light receiving unit 4. Because the encoder 1 includes the antireflection member 30, the encoder 1 can achieve higher accuracy while maintaining reliability by reducing stray light entering the light receiving unit 4.

Abstract: The present disclosure provides a communication system, a sensing device, and a semiconductor device, among other things. One example of the disclosed sensing device includes a semiconductor die having a photodetector, an optical element optically coupled to and disposed on the photodetector, at least one support structure substantially surrounding the optical element, and a top metal portion disposed on the semiconductor die adjacent to but distanced away from the optical element and the at least one support structure.

Abstract: An encoder includes a light emitting portion emitting light, an optical element portion splitting the light into a first beam and a second beam, an optical scale receiving the first beam and the second beam from the optical element portion, and a light receiving portion receiving the first beam and the second beam from the optical scale and outputting a signal in accordance with intensity of the received light, in which the optical element portion includes a prism on which the light is incident, a beam splitter disposed on the prism and splitting the light incident on the prism into the first beam heading for the optical scale and the second beam heading for an inside of the prism, and a first mirror portion disposed on the prism and reflecting the second beam from the beam splitter toward the optical scale.

Abstract: An angle-stable, miniaturized and integrate-able imaging system based on plasmon resonances or dielectric resonances for multispectral imaging maintaining full spatial resolution of the image sensor. Active tunability of the filter allows color recording, estimation of unknown spectra and determination of spectral singularities, for example laser lines, with the use of a conventional B/W camera. The system is characterized by high angular acceptance, cost-efficient fabrication and ease-of-use. This system can be used in conjunction with other commercial multispectral imaging systems such as RGB cameras to further enhance the spectral resolution. It can be adapted to different spectral ranges, depending on the application.

Abstract: A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.

Abstract: A high dynamic range sensing device is disclosed. The device includes an array of Bayer pattern units. Each of the Bayer pattern units comprises a plurality of pixels and each of the plurality of pixels comprises a plurality of photodiodes. At least one of the plurality of photodiodes in each pixel is configured to detect near infrared (NIR) light and at least one of the plurality of photodiodes in each of the plurality of pixels is configured to detect visible light.

Abstract: A photo-detection device includes an APD, a current detecting unit to which a signal via a first terminal of the APD is input, a load element connected to a node between the APD and the current detecting unit, a quench signal generating unit to which a signal from the current detecting unit is input and which outputs a quench signal, and a switch connected to a second terminal of the APD and a first wiring line to which first potential is supplied. The node is connected via the load element to a second wiring line to which second potential different from the first potential is supplied, and the quench signal generating unit generates a one-shot pulse signal as the quench signal based on the signal from the current detecting unit and causes the quench signal to be input to the switch.

Abstract: In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors.

Abstract: An encoder includes an optical scale including a scale portion that is constituted with a polarizer, a light emitting portion which emits light, an optical element unit which divides the light into first light and second light and makes the first and second lights incident onto the scale portion, and a light receiving portion which receives the first light and the second light from the scale unit and outputs a signal corresponding to intensities of the received first light and second light, and in which the first light and the second light overlap other within a plane of the scale portion.

Abstract: Initial data and target data are frequency-analyzed to obtain an initial Rayleigh-scattering spectrum (RSS) and a target RSS, respectively. A distance correction is performed for the target RSS by comparing the target RSS with the initial RSS, and a Rayleigh spectrum shift is determined on the basis of a correlation coefficient between the initial RSS and the target RSS after distance-corrected.

Abstract: A light detection circuit and a detection method thereof, and a light detection device are provided. The light detection circuit including a pixel circuit, a control unit, a counter, and a processor. The pixel circuit includes a phototransistor, a switching transistor, and an output sub-circuit. A first terminal of the output sub-circuit, a first electrode of the phototransistor, and a first electrode of the switching transistor are coupled to a first node, a gate of the phototransistor is coupled to a gradual change signal input line, a gate of the switching transistor is coupled to a scan line, and a second electrode of the switching transistor is coupled to the counter. The control unit is configured to control the counter to start counting under the control of a scan signal and a synchronization signal.

Abstract: A wavelength monitoring device includes a polarization rotation element; an etalon element that includes a first double refractive layer and a single refractive layer or a second double refractive layer that is disposed by rotating an optic axis of the second double refractive layer with respect to an optic axis of the first double refractive layer; a polarization separating element that separates an input light, which has the polarization direction rotated and is transmitted through the etalon element, into first light having a polarization direction parallel to the optic axis of the first double refractive layer and second light having a polarization direction perpendicular to the optic axis of the first double refractive layer; a first light receiving device that receives the first light to detect a first monitor value; and a second light receiving device that receives the second light to detect a second monitor value.

Abstract: Methods and systems for integrated multi-port waveguide photodetectors are disclosed and may include an optical receiver on a chip, where the optical receiver comprises a multi-port waveguide photodetector having three or more input ports. The optical receiver may be operable to receive optical signals via one or more grating couplers, couple optical signals to the photodetector via optical waveguides in the chip, and generate an output electrical signal based on the coupled optical signals using the photodetector. The photodetector may include four ports coupled to two PSGCs. The optical signals may be coupled to the photodetector via S-bends and/or tapers at ends of the optical waveguides. A width of the photodetector on sides that are coupled to the optical waveguides may be wider than a width of the optical waveguides coupled to the sides. Optical signals may be mixed with local oscillator signals using the multi-port waveguide photodetector.

Abstract: By configuring an encoder scale as an angled or inclined magnet or pair of oppositely arranged, adjacent magnets, a magnetic field sensor in a travel path of the scale can detect an absolute position of the scale for use in an industrial control system. Due to the angle or incline, when a first side of the scale is proximal to the sensor, the sensor can detect an angle of ?180°. As the scale moves to center with respect to the sensor, the sensor can detect an increasing angle to 0°. Then, as a second side of the scale becomes proximal to the sensor, the sensor can detect an increasing angle to +180°. The angle changes linearly with position. In one aspect, the pair of oppositely arranged magnets can be rotated with respect to the travel path to provide the angle. In another aspect, the pair of oppositely arranged magnets can be magnetized diagonally to provide the angle.

Abstract: Various embodiments of a light detection device and a method of using the device are disclosed. In one or more embodiments, the light detection device can include a housing that extends along a housing axis between top and bottom surfaces. The device can also include a port that is adapted to receive a sample, and a door connected to the housing. The door can include an actuator portion adapted to selectively move the door between a closed position and an open position, and a cover portion connected to the actuator portion and adapted to close the port when the door is in the closed position and open the port when the door is in the open position to allow external access to the port.

Abstract: Embodiments relate to a stacked photo sensor assembly where two substrates are stacked vertically. The two substrates are connected via interconnects at a pixel level to provide a signal from a photodiode at a first substrate to circuitry on a second substrate. The circuitry on the second substrate performs operations that were conventionally performed on first substrate. More specifically, charge storage of the first substrate is replaced with capacitors on the second substrate. A voltage signal corresponding to the amount of charge in the first substrate is generated and processed in the second substrate. By stacking the first and second substrates, the photo sensor assembly can be made more compact while increasing or at least retaining the photodiode fill factor of the photo sensor assembly.

Abstract: A delay circuit is provided. The delay circuit includes a first regulator and a second regulator, each of which is independently selectable based on a selection signal applied to a selection terminal of the delay circuit. Furthermore, the delay circuit is configurable in one of two distinct delay resolution regimes, each corresponding to only one edge an input signal being actively delayed by the delay circuit when one of the first regulator and the second regulator is enabled and the other one of the first regulator and the second regulator is turned off.

Abstract: An electronic device may have a display with a cover layer. An ambient light sensor may be aligned with an ambient light sensor window formed from an opening in a masking layer on the cover layer in an inactive portion of the display. To help mask the ambient light sensor window from view, the ambient light sensor window may be provided with a black coating that matches the appearance of surrounding masking layer material while allowing light to reach the ambient light sensor. The black coating may be formed from a black physical vapor deposition thin-film inorganic layer with a high index of refraction. An antireflection layer formed from a stack of dielectric layers may be interposed between the black thin-film inorganic layer and the display cover layer.