Abstract: Provided is a resist composition which contains a resin (A) and a solvent (B) that contains a compound (B1) represented by general formula (b-1), wherein the content of the active ingredients based on the total amount of the resist composition is 45% by mass or less. (In formula (b-1), R1 represents an alkyl group having from 1 to 10 carbon atoms.

Abstract: Methods and materials for improving the thermal stability of a metallic photoresist are disclosed. The metallic photoresist may comprise a metal core and one or more ligands, where each ligand is saturated and comprises from 1 to about 8 carbon atoms and at least two nitrogen atoms. Alternatively, a cross-linker may be used with the metallic photoresist, the cross-linker comprising a metal core and a plurality of cross-linking groups and having a molecular weight of about 1000 or less. Finally, an additive comprising carbonate or bicarbonate anions may be added during the formation of a developed photoresist layer. Each of these methods, independently or together, improve the thermal stability of the metallic photoresist, permitting improved line resolution.

Abstract: Disclosed are a salt represented by formula (I), an acid generator, and a resist composition: wherein Q1, Q2, R1 and R2 each represent a hydrogen atom, a fluorine atom, an alkyl group, etc.; z represents an integer of 0 to 6; X1 represents *—CO—O—, *—O—CO—, etc.; L1 and L2 each represent a single bond or an aliphatic hydrocarbon group; Ar1 represents an aromatic hydrocarbon group or a heterocyclic aromatic hydrocarbon group; R3 represents *—O—R10, *—O—CO—R10, etc., and R10 represents an acid-labile group; R4 represents a halogen atom, a haloalkyl group, or a hydrocarbon group; and m4 represents an integer of 0 to 8; and Z+ represent an organic cation.

Abstract: Manufacturing method includes forming photoresist layer including photoresist composition over substrate. Photoresist composition includes: photoactive compound, polymer, crosslinker. The polymer structure A1, A2, A3 independently C1-C30 aryl, alkyl, cycloalkyl, hydroxylalkyl, alkoxy, alkoxyl alkyl, acetyl, acetylalkyl, carboxyl, alkyl carboxyl, cycloalkyl carboxyl, hydrocarbon ring, heterocyclic, chain, ring, 3-D structure; R1 is C4-C15 chain, cyclic, 3-D structure alkyl, cycloalkyl, hydroxylalkyl, alkoxy, or alkoxyl alkyl; proportion of x, y, and z in polymer is 0?x/(x+y+z)?1, 0?y/(x+y+z)?1, and 0?z/(x+y+z)?1, x, y, and z all not 0 for same polymer.

Abstract: It is an object of the present invention to form a resist film that is highly sensitive and enables high-resolution patterning. The present invention relates to a resist material that comprises a polymer comprising a unit derived from a structure represented by the following formula (101). In the formula (101), R1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R1 may be the same or different. R11 represents a hydrogen atom or an alkyl group optionally having a substituent. R2 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y1 represents a single bond or a linking group.

Abstract: A photosensitive resin composition including a silsesquioxane-based copolymer obtained by copolymerizing a first monomer represented by Chemical Formula 1 (R1—R2—Si(R3)3), a second monomer represented by Chemical Formula 2 ((R4)n—Si(R5)4-n), a third monomer represented by Chemical Formula 3 (Si(R6)4), and a fourth monomer represented by Chemical Formula 4 ((R7)3—Si—R8—Si—(R7)3) are provided.

Abstract: A photosensitive resin film and application thereof are provided. When the photosensitive resin film is subjected to a thermogravimetric analysis under the conditions of heating at a rate of 5° C./min from 40° C. to 200° C. and then keeping the temperature at 200° C. for 10 min, the absolute value of the first derivative of the weight percentage with respect to time within the range of 0 to 40 min is higher than 0.1%/min and not higher than 1.0%/min.

Abstract: A resist composition comprising an acid compound, a photoacid generator of iodonium salt type and/or a photo-decomposable quencher of iodonium salt type, and a base polymer has a high sensitivity, reduced edge roughness or size variation, improved resolution and satisfactory storage stability.

Abstract: The present invention relates to a photoresist composition comprising a polymer(s), a photo acid generator(s), a (C) compound(s) comprising unit EO and unit PO, and a solvent(s). And the present invention relates to a method for manufacturing a photoresist coating, etched photoresist coating, and etched Si containing layer(s). And the present invention relates to a method for a a manufacturing a device.

Abstract: The present invention relates to a naphthalimide sulfonate derivative, and a photoacid generator and a photoresist composition each comprising same and, more specifically, to a naphthalimide sulfonate derivative compound, and a photoacid generator and a photoresist composition each comprising same, wherein the compound has excellent absorbance for light of i-line (365 nm) wavelength, is greatly easy to prepare into a polymerizable composition due to very high solubility in an organic solvent, has good thermal stability, and shows a favorable acid generation rate.

Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the composition for forming a resist underlayer film. (In formula (1), A1, A2, A3, A4, A5, and A6 each independently represent a hydrogen atom, methyl group, or ethyl group; Q1 represents a divalent organic group; R1 represents a tetravalent organic group; and R2 represents an alkenyl group or alkynyl group having 2-10 carbon atoms.) The film-forming composition contains a solvent and a polymer that has a unit structure given by formula (1).

Abstract: A method for reducing resist consumption (RRC) is provided. The method includes treating a surface of a substrate using a RRC composition and forming a photoresist layer comprising a metal-containing material on the RRC composition treated surface. The RRC composition includes a solvent and an acid or a base. The solvent has a dispersion parameter between 10 and 25. The acid has an acid dissociation constant between ?20 and 6.8. The base having an acid dissociation constant between 7.2 and 45.

Abstract: An onium salt consisting of an anion containing an iodized aromatic group and two sulfonate groups and a sulfonium or iodonium cation is a useful photoacid generator. A chemically amplified resist composition comprising the photoacid generator forms a pattern of rectangular profile with a good balance of sensitivity, CDU, LWR, MEF, and DOF when it is processed by photolithography using high-energy radiation.

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

Abstract: Carbon-carbon unsaturated bond containing, halogen containing, and solubility-enhancer containing coatings on semiconductor substrates for forming patterns thereon. The present coatings can be produced by coating of semiconductor substrates with carbon-carbon unsaturated bond-containing, halogen-containing, and solubility-enhancer containing polyhydrogensilsesquioxane resin solutions. Provided herein is also a method for patterning substrate coating of a polyhydrogensilsesquioxane containing a carbon-carbon unsaturated bond, halogen, and solubility-enhancer with radiation of light, the method comprising the steps of irradiating a coated substrate along a selected pattern to form an irradiated structure with a region of irradiated coating and a region with un-irradiated coating and selectively developing the irradiated structure to remove a substantial portion of the un-irradiated coating to form a patterned substrate.

Abstract: The present disclosure relates a photosensitive resin composition containing (A) an alkali-soluble resin having an imide bond and a phenolic hydroxyl group and (B) a compound that generates acid by light, a patterned cured film using the photosensitive resin composition, a method for producing a patterned cured film, and a semiconductor element.

Abstract: Patterning compositions are described based on organo tin dodecamers with hydrocarbyl ligands, oxo ligands, hydroxo ligands and carboxylato ligands. Alternative dodecamer embodiments have organo tin ligands in place of hydrocarbyl ligands. The organo tin ligands can be incorporated into the dodecamers from a monomer with the structure (RCC)3SnQ, where R is a hydrocarbyl group and Q is a alkyl tin moiety with a carbon bonded to the Sn atom of the monomer and with a Sn bonded as a replacement of a quaternary carbon atom with bonds to 4 carbon atoms. Some or all of the carboxylato and hydroxyl ligands can be replaced with fluoride ions. Good EUV patterning results are obtained with the dodecamer based patterning compositions.

Abstract: Manufacturing method includes forming photoresist layer including photoresist composition over substrate. Photoresist composition includes: photoactive compound, polymer, crosslinker. The polymer structure A1, A2, A3 independently C1-C30 aryl, alkyl, cycloalkyl, hydroxylalkyl, alkoxy, alkoxyl alkyl, acetyl, acetylalkyl, carboxyl, alky carboxyl, cycloalkyl carboxyl, hydrocarbon ring, heterocyclic, chain, ring, 3-D structure; R1 is C4-C15 chain, cyclic, 3-D structure alkyl, cycloalkyl, hydroxylalkyl, alkoxy, or alkoxyl alkyl; proportion of x, y, and z in polymer is 0?x/(x+y+z)?1, 0?y/(x+y+z)?1, and 0?z/(x+y+z)?1, x, y, and z all not 0 for same polymer.

Abstract: Provided are: a negative photosensitive resin composition with which high resolution properties are exhibited when a relief pattern is formed on copper wiring, imidization adequately progresses even when the curing temperature is low, and a cured relief pattern having good adhesion to copper wiring can be manufactured; and a method for manufacturing a cured relief pattern using the negative photosensitive resin composition. This negative photosensitive resin composition contains (A) a polyimide precursor including specific structural units which are represented by general formula (1) and which have a univalent organic group having a urea structure, and (B) a photopolymerization initiator.

Abstract: Provided is a monomer that improves solubility in organic solvents, hydrolyzability, and solubility in water after hydrolysis of a resin as well as imparts higher heat resistance to a resin.