Abstract: A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is a linking group.

Abstract: A radiation-sensitive resin composition includes: an onium salt compound represented by formula (1?); a resin including a structural unit having an acid-dissociable group; and a solvent. EA is a substituted or unsubstituted (?+?)-valent organic group having 1 to 40 carbon atoms; Z+ is a monovalent radiation-sensitive onium cation; and ? and ? are each independently 1 or 2.

Abstract: A method produces a semiconductor device, the method having a step of transferring an underlayer by employing a resist underlayer film-forming composition containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane in a non-alcoholic solvent in the presence of a strong acid, followed by a step (G) of removing the patterned resist film, the patterned resist underlayer film, and/or particles with a sulfuric acid-hydrogen peroxide mixture (SPM) prepared by mixing of aqueous hydrogen peroxide with sulfuric acid and/or an ammonia-hydrogen peroxide mixture (SC1) prepared by mixing of aqueous hydrogen peroxide with aqueous ammonia, wherein: the hydrolyzable silane contains a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) (wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond).

Abstract: A radiation-sensitive resin composition includes: a polymer including a structural unit including an acid-labile group; and a compound represented by formula (1). R1, R2, and R3 each independently represent a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms; X1, X2, and X3 each independently represent a group represented by formula (2); a sum of d, e, and f is no less than 1; R4 represents a hydrocarbon group having 1 to 20 carbon atoms and R5 represents a hydrocarbon group having 1 to 20 carbon atoms, or R4 and R5 taken together represent a heterocyclic structure having 4 to 20 ring atoms, together with the sulfur atom to which R4 and R5 bond; n is 0 or 1; A? represents a monovalent sulfonic acid anion; and Y represents —COO—, —OCO—, or —N(R7)CO—.

Abstract: A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I): wherein, EWG, Y, R, and M+ are the same as described in the specification.

Abstract: Provided are a resist composition that can improve coatability (coating film formability) with respect to a substrate in spin coating and close adherence of a resist film and that can form a good pattern, and a resist film in which a good pattern is formed. The resist composition contains a polymer, a solvent, and an aromatic vinyl monomer, and has a content of the aromatic vinyl monomer relative to the polymer of not less than 10 mass ppm and not more than 30,000 mass ppm.

Abstract: A monomer has the structure wherein R is an organic group comprising a polymerizable carbon-carbon double bond or carbon-carbon triple bond; X and Y are independently at each occurrence hydrogen or a non-hydrogen substituent; EWG1 and EWG2 are independently at each occurrence an electron-withdrawing group; p is 0, 1, 2, 3, or 4; n is 1, 2, 3, or 4; and M+ is an organic cation. A polymer prepared from monomer is useful as a component of a photoresist composition.

Abstract: A resist composition containing a resin component (A1) having a constitutional unit (a01) and a constitutional unit (a02) derived from compounds each represented by General Formulae (a01-1) and (a02-1), a compound (B1) represented by General Formula (b1), and a compound represented by General Formula (d1-1) or a compound represented by General Formula (d1-2), in the formulae, Ct represents a tertiary carbon atom, a carbon atom at an ?-position of Ct constitutes a carbon-carbon unsaturated bond, Wa02 represents an aromatic hydrocarbon group, and Rb1 represents hydrocarbon group, where a fluorine atom is not contained

Abstract: A method of forming a photoresist pattern includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist composition includes metal particles and a thermally stable ligand attached to the metal particles. The thermally stable ligand includes branched or unbranched, cyclic or non-cyclic, C1-C7 alkyl groups or C1-C7 fluoroalkyl groups. The C1-C7 alkyl or C1-C7 fluoroalkyl groups include one or more of —CF3, —SH, —OH, ?O, —S—, —P—, —PO2, —C(?O)SH, —C(?O)OH, —C(?O)O—, —O—, —N—, —C(?O)NH, —SO2OH, —SO2SH, —SOH, or —SO2—. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. In an embodiment, the method includes heating the photoresist layer before selectively exposing the photoresist layer to actinic radiation.

Abstract: There are provided a photosensitive resin composition which can be applied to either a projection exposure or direct-write exposure machine without fine adjustment of the composition, and can form a resist pattern having an excellent cross-sectional shape in which an undercut in which the bottom portion of the resist pattern is hollowed and omission of the top of the resist pattern are less likely to occur, and a line width of an intermediate portion (central portion) and a deepest portion (bottom portion) in the depth direction of the cross section of the resist pattern is less likely to be larger than a line width of the surface portion (that is, linearity in the depth direction of the resist pattern contour is favorable), and which has excellent insulation reliability and crack resistance reliability, and a dry film using the same, a printed wiring board, and a printed wiring board manufacturing method.

Abstract: A photoresist includes a polymer and a photoactive compound. The photoactive compound contains a sensitizer component. The photoactive compound contains an acid generator or a base molecular. The acid generator or the base molecular bonds the sensitizer component. The photoactive compound is within a polymer backbone. The sensitizer component is configured to absorb an EUV light to produce electrons.

Abstract: The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

Abstract: Alternating copolymers having hydrocarbon-substituted terminal units and repeat units each containing two different monomer units with extreme ultraviolet (EUV)-absorbing elements are disclosed. Alternating copolymers having organic terminal units and repeat units each containing a monomer unit with an EUV-absorbing element and an organic monomer unit are also disclosed. A process of forming a polymer resist, which includes providing an alternating copolymer having repeat units with at least one EUV-absorbing monomer unit and replacing end groups of the alternating copolymer with unreactive terminal units, is disclosed as well.

Abstract: A photosensitive resin composition, a patterning process performed using the photosensitive resin composition, a cured film formed by curing the pattern, and an electronic component having the cured film. The photosensitive resin composition includes a resin, a photosensitizer, a surfactant containing a structural unit represented by formula (1), and a solvent, where Y1 and Y2 each independently represent a hydrogen atom, a methyl group, a phenyl group, or a group represented by formula (2), at least one of Y1 and Y2 is a group represented by formula (2), R1 to R6 are monovalent hydrocarbon groups that may be the same or different and optionally contain a heteroatom, having 1 to 20 carbon atoms, “1” and “n” are each independently integers of 1 to 100, and “m” is an integer of 0 to 100.

Abstract: The present application relates to a binder resin including a compound represented by Formula 1-1 and a compound represented by the following Formula 1-2, a negative-type photosensitive resin composition, and a display device including a black bank formed by using the same.

Abstract: A positive photosensitive resin composition comprises a resin, a diazonaphthoquinone compound and a solvent. The resin comprises a combination of any one or more of polyamic acid, polyamic ester and polyimide of a segment shown in the following structure; . The resin film formed by the positive photosensitive resin composition is applied to a semiconductor passivation film, a semiconductor element protective film, an insulating layer of an organic electroluminescent element, a flat film of a thin film transistor (TFT) substrate, a wiring protective insulating film of a circuit board and a flat film for displays and solid camera elements. The photosensitive resin film formed by the positive photosensitive resin composition has the characteristics of low shrinking rate and excellent heat resistance and resolving power, and has good application effect in electronic elements.

Abstract: An adhesion promoter as shown in Formula (I) and a photosensitive resin composition containing the adhesion promoter are disclosed: where R1, R2 and R3 each refer to a hydrogen atom, an optionally substituted C1-C20 alkyl, an optionally substituted C2-C20 alkenyl, an optionally substituted C2-C20 alkynyl, an optionally substituted phenyl, or other optionally substituted carbon atom; A refers to an optionally substituted C1-C20 alkyl, an optionally substituted C2-C20 alkenyl, an optionally substituted C2-C20 alkynyl, an optionally substituted phenyl, or other an optionally substituted carbon atom substituents; and the carbon in the alkyl, the alkenyl, the alkynyl, the phenyl, or the carbon atom substituents is optionally substituted with one or more of N, O and S; and X refers to an optionally substituted aromatic heterocyclic group. The adhesion promoter and the photosensitive resin composition can be used for manufacturing a semiconductor integrated circuit (IC), a LED and a flat-panel display.

Abstract: A composition that enables a resist underlayer film to be formed, contains: a compound having at least one partial structure represented by formula (1); and a solvent. In the formula (1), for example, Ar1 represents a group obtained by removing (p+1) hydrogen atoms on an aromatic carbon ring from a substituted or unsubstituted arene having 6 to 30 ring atoms, or a group obtained by removing (p+1) hydrogen atoms on an aromatic heteroring from a substituted or unsubstituted heteroarene having 5 to 30 ring atoms; Ar2 represents a substituted or unsubstituted aryl group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms, and R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms, and R3 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group.

Abstract: A resist composition comprising an ammonium salt and fluorine-containing polymer offers a high sensitivity and is unsusceptible to nano-bridging, pattern collapse or residue formation, independent of whether it is of positive or negative tone. The ammonium salt and fluorine-containing polymer comprises repeat units AU having an ammonium salt structure containing a carboxylic acid anion, sulfonamide anion, phenoxide anion or enolate anion of ?-diketone, the anion containing fluorine, but not iodine and bromine, and repeat units FU-1 having a trifluoromethylalcohol group and/or repeat units FU-2 having a fluorinated hydrocarbyl group.

Abstract: Disclosed herein is a photoresist composition comprising a first polymer comprising an acid labile group; a photoacid generator; and an acid diffusion control agent that comprises a tri-alkyl amide compound having a lipophilicity (log P) value that is greater than 11.