Patents Examined by John S. Chu
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Patent number: 12292683Abstract: Provided are a curable composition including a colorant, a resin, and a thiol compound, in which a thiol value is 6×10?6 mmol/g to 6×10?4 mmol/g; a curable composition including a colorant, a resin, and a thiol compound, in which a content of the thiol compound is 1 ppm to 99 ppm; a cured product of the curable composition; a color filter including the cured product; and a solid-state imaging element and an image display device including the color filter.Type: GrantFiled: February 25, 2022Date of Patent: May 6, 2025Assignee: FUJIFILM CorporationInventors: Junichi Ito, Hiroaki Idei, Yushi Kaneko
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Patent number: 12276912Abstract: The present disclosure relates to a UV- and heat-curable ladder-like polysilsesquioxane copolymer and a method for preparing the same. Since a controlled functionality can be provided only on a desired region via a thiol-ene click reaction without an additional additive, an insulating layer having a low dielectric constant and a microcircuit pattern can be formed without an additional etching process.Type: GrantFiled: July 23, 2021Date of Patent: April 15, 2025Assignee: Korea Institute of Science and TechnologyInventors: Seung Sang Hwang, Soon Man Hong, Kyung Youl Baek, Chong Min Koo, Albert Lee, Seon Joon Kim, You Mee Choi
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Patent number: 12276913Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: GrantFiled: July 6, 2022Date of Patent: April 15, 2025Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Patent number: 12276909Abstract: The present invention relates to resist compositions comprising a polymer component, a photoacid generator component (PAG), a photoactive diazonaphthoquinone component (PAC), a base component, a solvent component, and optionally, a heterocyclic thiol component. The polymer component is a Novolak derivative, comprising Novolak repeat units with free phenolic hydroxy moieties, and Novolak repeat units comprising phenolic hydroxy moieties protected with an acid cleavable acetal moiety.Type: GrantFiled: May 22, 2019Date of Patent: April 15, 2025Assignee: Merck Patent GmbHInventors: Medhat A. Toukhy, Weihong Liu, Takanori Kudo, Hung-Yang Chen, Jian Yin
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Patent number: 12271112Abstract: A negative resist composition comprising a base polymer comprising repeat units derived from a triple bond-containing maleimide compound is provided. A pattern with a high resolution and reduced edge roughness is formed therefrom.Type: GrantFiled: February 4, 2022Date of Patent: April 8, 2025Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Naoya Inoue, Kenji Funatsu
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Patent number: 12265331Abstract: A radiation-sensitive resin composition includes: a resin including a structural unit (A) represented by formula (1) and a structural unit (B) having an acid-dissociable group; a radiation-sensitive acid generator; and a solvent. R1 is a halogen atom-substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; X is —O— or —S—; La1 is a halogen atom-substituted or unsubstituted divalent hydrocarbon group having 1 to 10 carbon atoms, and RP is a monovalent organic group having at least one structure selected from the group consisting of a lactone structure, a cyclic carbonate structure, and a sultone structure.Type: GrantFiled: June 30, 2022Date of Patent: April 1, 2025Assignee: JSR CORPORATIONInventors: Ryuichi Nemoto, Kota Furuichi, Hajime Inami
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Patent number: 12259652Abstract: The present disclosure provides a photosensitive dry film enabling a photocured film being excellent in insulation reliability and resolution and having a frosted appearance to be obtained. A photosensitive dry film including a support film having a first main surface and a second main surface opposite to the first main surface, and a photosensitive resin layer provided on the first main surface, in which the first main surface has an irregular surface formed by chemical etching.Type: GrantFiled: August 20, 2021Date of Patent: March 25, 2025Assignee: TAMURA CORPORATIONInventors: Ryoya Takashima, Masanobu Ishizaka, Shinji Imai
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Patent number: 12259651Abstract: Ligand-capped inorganic particles, dispersions of the ligand-capped inorganic particles, and films composed of the ligand-capped inorganic particles are provided. Also provided are methods of patterning the films and electronic, photonic, and optoelectronic devices that incorporate the films. The ligands include bifunctional ligands and two-component ligand systems that include a photosensitive group, cation, or molecule.Type: GrantFiled: October 11, 2019Date of Patent: March 25, 2025Assignee: THE UNIVERSITY OF CHICAGOInventors: Dmitri V. Talapin, Yuanyuan Wang, Jia-Ahn Pan, Haoqi Wu
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Patent number: 12259653Abstract: A radiation-sensitive resin composition contains: a polymer that includes a structural unit including an acid-labile group; a radiation-sensitive acid generator; and a compound represented by the following formula (1). In the following formula (1), R1 represents a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms; and Xn+ represents a radiation-sensitive onium cation having a valency of n, wherein n is an integer of 1 to 3. It is preferable that R1 in the following formula (1) represents an organic group, and that the organic group has a ring structure. It is preferable that R1 in the following formula (1) represents an organic group, and that the organic group is an acid-labile group. Xn+ in the following formula (1) preferably represents a sulfonium cation, an iodonium cation, or a combination thereof.Type: GrantFiled: December 3, 2021Date of Patent: March 25, 2025Assignee: JSR CORPORATIONInventor: Katsuaki Nishikori
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Patent number: 12253800Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.Type: GrantFiled: June 30, 2021Date of Patent: March 18, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: An-Ren Zi, Joy Cheng, Ching-Yu Chang
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Patent number: 12248249Abstract: It is an object of the present invention to form a resist film that is highly sensitive and enables high-resolution patterning. The present invention relates to a resist material that comprises a polymer comprising a unit derived from a structure represented by the following formula (101). In the formula (101), R1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R1 may be the same or different. R11 represents a hydrogen atom or an alkyl group optionally having a substituent. R2 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y1 represents a single bond or a linking group.Type: GrantFiled: June 30, 2020Date of Patent: March 11, 2025Assignee: OJI HOLDINGS CORPORATIONInventors: Kimiko Hattori, Kazuyo Morita
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Patent number: 12248251Abstract: A composition for forming a resist underlayer film containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane, wherein the hydrolyzable silane contains a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond; R2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, an acyloxyalkyl group, or an organic group having an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, a hydroxyl group, an alkoxy group, an ester group, a sulfonyl group, or a cyano group, or any combination of these groups, and is bonded to a silicon atom via an Si—C bond; R1 and R2 are optionally bonded together to form a ring structure; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1Type: GrantFiled: July 12, 2022Date of Patent: March 11, 2025Assignee: NISSAN CHEMICAL CORPORATIONInventors: Wataru Shibayama, Hayato Hattori, Ken Ishibashi, Makoto Nakajima
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Patent number: 12242193Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that in a first aspect comprise a crosslinker component that comprises a structure of the following Formula (I):Type: GrantFiled: September 11, 2023Date of Patent: March 4, 2025Assignee: ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD.Inventors: Eui-Hyun Ryu, Jin Hong Park, You Rim Shin, Ji-Hon Kang, Jung-June Lee, Jae-Bong Lim
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Patent number: 12242189Abstract: A semiconductor photoresist composition includes an organotin compound represented by Chemical Formula 1, and a solvent. A method for preparing the same, and a method of forming patterns utilizing the same are disclosed. Specific details of Chemical Formula 1 are as defined in the specification.Type: GrantFiled: November 10, 2021Date of Patent: March 4, 2025Assignee: Samsung SDI Co., Ltd.Inventor: Kyungsoo Moon
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Patent number: 12228859Abstract: Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an orType: GrantFiled: December 19, 2018Date of Patent: February 18, 2025Assignee: Rohm and Haas Electronic Materials LLCInventors: Choong-Bong Lee, Stefan J. Caporale, Jason A. DeSisto, Jong Keun Park, Cong Liu, Cheng-Bai Xu, Cecily Andes
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Patent number: 12228858Abstract: A monomer represented by Chemical Formula (1): wherein, X, Y, and Z are the same as described in the specification, and the polymer including repeat units derived from the monomer.Type: GrantFiled: October 31, 2018Date of Patent: February 18, 2025Assignee: DUPONT SPECIALTY MATERIALS KOREA LTDInventors: Jae Hwan Sim, Suwoong Kim, Jin Hong Park, Myung Yeol Kim, Yoo-Jin Ghang, Jae-Bong Lim
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Patent number: 12216403Abstract: This invention relates to a positive photosensitive resin composition that includes a siloxane copolymer of two kinds of reactive silane compounds with specific structures wherein residual impurities such as unreacted monomers and catalysts are minimized, and a UV absorber including one or more kinds of phenol hydroxyl groups capable of crosslinking and an alkoxy group. Accordingly, the resin composition exhibits excellent performances such as sensitivity, resolution, and degree of planarization, and also has excellent weatherability and UV absorbance, thereby providing excellent panel reliability.Type: GrantFiled: October 8, 2020Date of Patent: February 4, 2025Assignee: DONJIN SEMICHEM CO., LTD.Inventors: Kyoungsoon Shin, Hyoc-Min Youn, Tai Hoon Yeo, Dong Myung Kim, Gi Seon Lee, Ah Rum Park, Seok Hyeon Lee
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Patent number: 12216405Abstract: A photosensitive resin composition containing (A) an acid-crosslinkable group-containing silicone resin, (B) a photo-acid generator, and (C) quantum dot particles. Thus, a photosensitive resin composition is capable of easily forming a film having favorable heat resistance, lithography resolution, and luminous properties; a photosensitive resin film and a photosensitive dry film are obtained by using the photosensitive resin composition; patterning processes use these; and a light emitting device is obtained by using the photosensitive resin composition.Type: GrantFiled: November 12, 2020Date of Patent: February 4, 2025Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Hitoshi Maruyama, Tamotsu Oowada
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Patent number: 12216401Abstract: A sulfonium salt having formula (1) is novel. A chemically amplified resist composition comprising the sulfonium salt as a PAG has advantages including solvent solubility and improved lithography properties such as EL and LWR when processed by photolithography using high-energy radiation such as KrF or ArF excimer laser, EB or EUV.Type: GrantFiled: September 28, 2021Date of Patent: February 4, 2025Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Masahiro Fukushima, Kazuhiro Katayama
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Patent number: 12189288Abstract: Provided is a composition including colloidal silica particles; and a solvent, in which a viscosity at 25° C. is 4 mPa·s or lower. The colloidal silica particles are a composition in which a plurality of spherical silica particles are linked in a beaded shape or a composition in which a plurality of spherical silica particles are linked in a planar shape. The solvent includes a solvent A1 having a boiling point of 190° C. to 280° C. Provided is also a film forming method using the above-described composition.Type: GrantFiled: May 14, 2021Date of Patent: January 7, 2025Assignee: FUJIFILM CorporationInventor: Takahiro Okawara