Patents Examined by John S. Chu
  • Patent number: 12292683
    Abstract: Provided are a curable composition including a colorant, a resin, and a thiol compound, in which a thiol value is 6×10?6 mmol/g to 6×10?4 mmol/g; a curable composition including a colorant, a resin, and a thiol compound, in which a content of the thiol compound is 1 ppm to 99 ppm; a cured product of the curable composition; a color filter including the cured product; and a solid-state imaging element and an image display device including the color filter.
    Type: Grant
    Filed: February 25, 2022
    Date of Patent: May 6, 2025
    Assignee: FUJIFILM Corporation
    Inventors: Junichi Ito, Hiroaki Idei, Yushi Kaneko
  • Patent number: 12276912
    Abstract: The present disclosure relates to a UV- and heat-curable ladder-like polysilsesquioxane copolymer and a method for preparing the same. Since a controlled functionality can be provided only on a desired region via a thiol-ene click reaction without an additional additive, an insulating layer having a low dielectric constant and a microcircuit pattern can be formed without an additional etching process.
    Type: Grant
    Filed: July 23, 2021
    Date of Patent: April 15, 2025
    Assignee: Korea Institute of Science and Technology
    Inventors: Seung Sang Hwang, Soon Man Hong, Kyung Youl Baek, Chong Min Koo, Albert Lee, Seon Joon Kim, You Mee Choi
  • Patent number: 12276913
    Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
    Type: Grant
    Filed: July 6, 2022
    Date of Patent: April 15, 2025
    Assignee: Inpria Corporation
    Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
  • Patent number: 12276909
    Abstract: The present invention relates to resist compositions comprising a polymer component, a photoacid generator component (PAG), a photoactive diazonaphthoquinone component (PAC), a base component, a solvent component, and optionally, a heterocyclic thiol component. The polymer component is a Novolak derivative, comprising Novolak repeat units with free phenolic hydroxy moieties, and Novolak repeat units comprising phenolic hydroxy moieties protected with an acid cleavable acetal moiety.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: April 15, 2025
    Assignee: Merck Patent GmbH
    Inventors: Medhat A. Toukhy, Weihong Liu, Takanori Kudo, Hung-Yang Chen, Jian Yin
  • Patent number: 12271112
    Abstract: A negative resist composition comprising a base polymer comprising repeat units derived from a triple bond-containing maleimide compound is provided. A pattern with a high resolution and reduced edge roughness is formed therefrom.
    Type: Grant
    Filed: February 4, 2022
    Date of Patent: April 8, 2025
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun Hatakeyama, Naoya Inoue, Kenji Funatsu
  • Patent number: 12265331
    Abstract: A radiation-sensitive resin composition includes: a resin including a structural unit (A) represented by formula (1) and a structural unit (B) having an acid-dissociable group; a radiation-sensitive acid generator; and a solvent. R1 is a halogen atom-substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; X is —O— or —S—; La1 is a halogen atom-substituted or unsubstituted divalent hydrocarbon group having 1 to 10 carbon atoms, and RP is a monovalent organic group having at least one structure selected from the group consisting of a lactone structure, a cyclic carbonate structure, and a sultone structure.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: April 1, 2025
    Assignee: JSR CORPORATION
    Inventors: Ryuichi Nemoto, Kota Furuichi, Hajime Inami
  • Patent number: 12259652
    Abstract: The present disclosure provides a photosensitive dry film enabling a photocured film being excellent in insulation reliability and resolution and having a frosted appearance to be obtained. A photosensitive dry film including a support film having a first main surface and a second main surface opposite to the first main surface, and a photosensitive resin layer provided on the first main surface, in which the first main surface has an irregular surface formed by chemical etching.
    Type: Grant
    Filed: August 20, 2021
    Date of Patent: March 25, 2025
    Assignee: TAMURA CORPORATION
    Inventors: Ryoya Takashima, Masanobu Ishizaka, Shinji Imai
  • Patent number: 12259651
    Abstract: Ligand-capped inorganic particles, dispersions of the ligand-capped inorganic particles, and films composed of the ligand-capped inorganic particles are provided. Also provided are methods of patterning the films and electronic, photonic, and optoelectronic devices that incorporate the films. The ligands include bifunctional ligands and two-component ligand systems that include a photosensitive group, cation, or molecule.
    Type: Grant
    Filed: October 11, 2019
    Date of Patent: March 25, 2025
    Assignee: THE UNIVERSITY OF CHICAGO
    Inventors: Dmitri V. Talapin, Yuanyuan Wang, Jia-Ahn Pan, Haoqi Wu
  • Patent number: 12259653
    Abstract: A radiation-sensitive resin composition contains: a polymer that includes a structural unit including an acid-labile group; a radiation-sensitive acid generator; and a compound represented by the following formula (1). In the following formula (1), R1 represents a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms; and Xn+ represents a radiation-sensitive onium cation having a valency of n, wherein n is an integer of 1 to 3. It is preferable that R1 in the following formula (1) represents an organic group, and that the organic group has a ring structure. It is preferable that R1 in the following formula (1) represents an organic group, and that the organic group is an acid-labile group. Xn+ in the following formula (1) preferably represents a sulfonium cation, an iodonium cation, or a combination thereof.
    Type: Grant
    Filed: December 3, 2021
    Date of Patent: March 25, 2025
    Assignee: JSR CORPORATION
    Inventor: Katsuaki Nishikori
  • Patent number: 12253800
    Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: March 18, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: An-Ren Zi, Joy Cheng, Ching-Yu Chang
  • Patent number: 12248249
    Abstract: It is an object of the present invention to form a resist film that is highly sensitive and enables high-resolution patterning. The present invention relates to a resist material that comprises a polymer comprising a unit derived from a structure represented by the following formula (101). In the formula (101), R1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R1 may be the same or different. R11 represents a hydrogen atom or an alkyl group optionally having a substituent. R2 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y1 represents a single bond or a linking group.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: March 11, 2025
    Assignee: OJI HOLDINGS CORPORATION
    Inventors: Kimiko Hattori, Kazuyo Morita
  • Patent number: 12248251
    Abstract: A composition for forming a resist underlayer film containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane, wherein the hydrolyzable silane contains a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond; R2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, an acyloxyalkyl group, or an organic group having an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, a hydroxyl group, an alkoxy group, an ester group, a sulfonyl group, or a cyano group, or any combination of these groups, and is bonded to a silicon atom via an Si—C bond; R1 and R2 are optionally bonded together to form a ring structure; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1
    Type: Grant
    Filed: July 12, 2022
    Date of Patent: March 11, 2025
    Assignee: NISSAN CHEMICAL CORPORATION
    Inventors: Wataru Shibayama, Hayato Hattori, Ken Ishibashi, Makoto Nakajima
  • Patent number: 12242193
    Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that in a first aspect comprise a crosslinker component that comprises a structure of the following Formula (I):
    Type: Grant
    Filed: September 11, 2023
    Date of Patent: March 4, 2025
    Assignee: ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD.
    Inventors: Eui-Hyun Ryu, Jin Hong Park, You Rim Shin, Ji-Hon Kang, Jung-June Lee, Jae-Bong Lim
  • Patent number: 12242189
    Abstract: A semiconductor photoresist composition includes an organotin compound represented by Chemical Formula 1, and a solvent. A method for preparing the same, and a method of forming patterns utilizing the same are disclosed. Specific details of Chemical Formula 1 are as defined in the specification.
    Type: Grant
    Filed: November 10, 2021
    Date of Patent: March 4, 2025
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Kyungsoo Moon
  • Patent number: 12228859
    Abstract: Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an or
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: February 18, 2025
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Choong-Bong Lee, Stefan J. Caporale, Jason A. DeSisto, Jong Keun Park, Cong Liu, Cheng-Bai Xu, Cecily Andes
  • Patent number: 12228858
    Abstract: A monomer represented by Chemical Formula (1): wherein, X, Y, and Z are the same as described in the specification, and the polymer including repeat units derived from the monomer.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: February 18, 2025
    Assignee: DUPONT SPECIALTY MATERIALS KOREA LTD
    Inventors: Jae Hwan Sim, Suwoong Kim, Jin Hong Park, Myung Yeol Kim, Yoo-Jin Ghang, Jae-Bong Lim
  • Patent number: 12216403
    Abstract: This invention relates to a positive photosensitive resin composition that includes a siloxane copolymer of two kinds of reactive silane compounds with specific structures wherein residual impurities such as unreacted monomers and catalysts are minimized, and a UV absorber including one or more kinds of phenol hydroxyl groups capable of crosslinking and an alkoxy group. Accordingly, the resin composition exhibits excellent performances such as sensitivity, resolution, and degree of planarization, and also has excellent weatherability and UV absorbance, thereby providing excellent panel reliability.
    Type: Grant
    Filed: October 8, 2020
    Date of Patent: February 4, 2025
    Assignee: DONJIN SEMICHEM CO., LTD.
    Inventors: Kyoungsoon Shin, Hyoc-Min Youn, Tai Hoon Yeo, Dong Myung Kim, Gi Seon Lee, Ah Rum Park, Seok Hyeon Lee
  • Patent number: 12216405
    Abstract: A photosensitive resin composition containing (A) an acid-crosslinkable group-containing silicone resin, (B) a photo-acid generator, and (C) quantum dot particles. Thus, a photosensitive resin composition is capable of easily forming a film having favorable heat resistance, lithography resolution, and luminous properties; a photosensitive resin film and a photosensitive dry film are obtained by using the photosensitive resin composition; patterning processes use these; and a light emitting device is obtained by using the photosensitive resin composition.
    Type: Grant
    Filed: November 12, 2020
    Date of Patent: February 4, 2025
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Hitoshi Maruyama, Tamotsu Oowada
  • Patent number: 12216401
    Abstract: A sulfonium salt having formula (1) is novel. A chemically amplified resist composition comprising the sulfonium salt as a PAG has advantages including solvent solubility and improved lithography properties such as EL and LWR when processed by photolithography using high-energy radiation such as KrF or ArF excimer laser, EB or EUV.
    Type: Grant
    Filed: September 28, 2021
    Date of Patent: February 4, 2025
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masahiro Fukushima, Kazuhiro Katayama
  • Patent number: 12189288
    Abstract: Provided is a composition including colloidal silica particles; and a solvent, in which a viscosity at 25° C. is 4 mPa·s or lower. The colloidal silica particles are a composition in which a plurality of spherical silica particles are linked in a beaded shape or a composition in which a plurality of spherical silica particles are linked in a planar shape. The solvent includes a solvent A1 having a boiling point of 190° C. to 280° C. Provided is also a film forming method using the above-described composition.
    Type: Grant
    Filed: May 14, 2021
    Date of Patent: January 7, 2025
    Assignee: FUJIFILM Corporation
    Inventor: Takahiro Okawara