Abstract: A photosensitive resin composition comprising a dual end alicyclic epoxy-modified silicone resin having formula (A1) and a photoacid generator is provided. In formula (A1), R1 to R4 are a C1-C20 monovalent hydrocarbon group and n is an integer of 1-600. The composition enables pattern formation using radiation of widely varying wavelength, and the patterned film has high transparency, light resistance, and heat resistance.

Abstract: A resist composition comprising a base polymer and a compound containing an iodized benzene ring and an aromatic ring-containing group having a phenolic hydroxyl group is improved in sensitivity, LWR and CDU.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including at least one acid generator (B1) represented by general formula (b1) shown below, at least one acid generator (B2) represented by general formula (b2) shown below, and at least one acid generator (B3) represented by general formula (b3) shown below (wherein IV to R3 each independently represents a cyclic group which may have a substituent, a chain alkyl group, or a chain alkenyl group; Y1 represents a single bond or a divalent linking group containing an oxygen atom; M1+ to M3+ represents a monovalent organic cation; n represents an integer of 1 to 4; m represents an integer of 0 to 4; provided that, when m is 0, the carbon atom adjacent to the sulfur atom within R2 has no fluorine atom bonded thereto).

Abstract: This is to provide a polymer of a polyimide precursor which is soluble in an aqueous alkaline solution, and capable of using a base resin of a positive type and negative type photosensitive resin composition which is capable of forming a fine pattern and obtaining high resolution. Also provided is a positive type and negative type photosensitive resin composition using such a polymer of a polyimide precursor. Further provided are a patterning process and a method of forming a cured film using the composition. Provided is a polymer of a polyimide precursor which comprises a structural unit represented by the following general formula (1), wherein, X1, R1, Z, a repeating number “s”, Y1, Rf, a repeating number “n” and “k” represent the same meanings as mentioned in the specification.

Abstract: The present embodiment provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein R1 represents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, and may be the same or different in the same naphthalene ring or benzene ring, in which at least one R2 represents a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n struct

Abstract: The present invention provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein R1 represents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or a non-bridging group, each m2 is independently an integer of 0 to 7, in which at least

Abstract: The present invention relates to a photosensitive resin composition that is excellent in adhesiveness and sensitivity. Specifically, the photosensitive resin composition is capable of providing a cured film that is excellent in transparency, sensitivity, chemical resistance, and adhesiveness upon immersion in a stripper. Thus, the cured film can be effectively used in a liquid crystal display, an organic EL display, and the like.

Abstract: Provided are a novel water-soluble diacetylene monomer, a composition for photolithography including the novel water-soluble diacetylene monomer and a conductive polymer, and a method of forming micropatterns using the composition. The water-soluble diacetylene monomer may not aggregate even when mixed with a water-soluble conductive polymer. Accordingly, a uniform composition for photolithography can be prepared by mixing a water-soluble conductive polymer with the diacetylene monomer, and micropatterns can be formed using the composition. More particularly, when the composition is formed into a thin film and then is irradiated with light, only light-irradiated portions of the diacetylene monomer are selectively crosslinked due to photopolymerization, thereby resulting in insoluble negative-type micropatterns.

Abstract: A photo-curable composition having a high polymerization rate and a high polymerization conversion is provided, containing a radical-polymerizable monomer (A), a photopolymerization initiator (B), and a compound (C) serving as a sensitizer and having the following general formula (1), wherein X1 and X2 are selected from the group consisting of a hydrogen atom, alkyl groups, a phenyl group, a naphthyl group, and alkyl groups in which part or all of the hydrogen atoms are substituted with fluorine; where X1 and X2 may be the same or different; and R1 to R10 are independently selected from the group consisting of a hydrogen atom, halogen atoms, alkyl groups, alkoxy groups, a phenyl group, a naphthyl group, and alkyl groups in which part or all of the hydrogen atoms are substituted with fluorine, wherein R1 to R10 may be the same or different.

Abstract: The present disclosure provides an embodiment of a method for lithography patterning. The method includes coating a photoresist layer over a substrate, wherein the photoresist layer includes a first polymer, and a first photo-acid generator (PAG), and a chemical additive mixed in a solvent; performing an exposing process to the photoresist layer; and performing a developing process to the photoresist layer to form a patterned photoresist layer. The chemical additive has a non-uniform distribution in the photoresist layer.

Abstract: A photosensitive composite material is provided. The photosensitive composite material includes 0.1-20.5 parts by weight of a nanoporous silica material, 10.9-68.6 parts by weight of a siloxane polymer, and 10.9-89 parts by weight of a photosensitive siloxane composition, including a siloxane polymer having at least one terminal functional group being vinyl group and a siloxane polymer having at least one terminal functional group being thiol group, based on 100 parts by weight of the photosensitive composite material. The siloxane polymer is a homopolymer of a monomer having a structure of Formula (I) wherein each of R is independently a linear or branched C1-C10 alkyl group, n is a positive integer between 10 and 1000, X includes an alkoxysilyl group, a methacrylate group, an epoxy group, a vinyl group, or an acrylate group.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: A photosensitive resin composition includes (A) a photo-conversion material; (B) a binder resin; (C) a photopolymerizable monomer; (D) a photopolymerization initiator; and (E) a solvent, wherein the solvent includes a first solvent having a polarity index (Snyder Polarity Index) of 0.1 times or less relative to a polarity index of water. The photosensitive resin composition having excellent color reproducibility, color purity, viewing angle, and the like may be provided by using a photoconversion material instead of a pigment or a dye conventionally used as a color material and a color filter having an excellent photo-conversion ratio by using this photosensitive resin composition may be provided.

Abstract: A hardmask composition may include graphene nanoparticles having a size in a range of about 5 nm to about 100 nm and a solvent.

Abstract: [Problem] To provide a high heat resistance resist composition and a pattern formation method using the composition. [Solution] The present invention provides a chemically amplified negative-type resist composition comprising a particular polymer and a particular crosslinking agent, and this composition makes it possible to form a resist pattern of high sensitivity, of excellent resolution and of strong heat-resistance.

Abstract: A resist composition containing a polymer compound which has a constitutional unit (a0) represented by Formula (a0-1); and an acid generator which is formed of a compound represented by Formula (b1) (in the formulae, Ra00 represents an acid dissociable group represented by Formula (a0-r1-1); Ra01, Ra02, Ra031, Ra032, and Ra033 represent a hydrocarbon group; Ya0 represents a quaternary carbon atom; Rb1 represents a hydrocarbon group which has a steroid skeleton containing at least one hydroxyl group; Yb1 represents a divalent linking group having a single bond or a hetero atom; Vb1 represents a single bond, an alkylene group, or a fluorinated alkylene group; and Rf1 represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group).

Abstract: A resist composition including a resin component having a structural unit derived form a compound represented by formula (a0-1) (in the formula, W represents a polymerizable group-containing group; Ra01 is a group which is bonded to Ra03 to form an aliphatic cyclic group, or bonded to Ra04 to form an aliphatic cyclic group; Ra02 represents a hydrocarbon group which may have a substituent; Ra03 is a hydrogen atom or a monovalent organic group in the case where Ra01 is not bonded thereto; Ra04 is a hydrogen atom or a monovalent organic group in the case where Ra01 is not bonded thereto; and Ra05 to Ra07 each independently represents a hydrogen atom or a monovalent organic group).

Abstract: A positive photosensitive resin composition comprising (a) polybenzoxazole precursor, (b) a cross-linking agent, (c) a diazonaphoquinone compound, (d) an iodonium compound and (e) a solvent.

Abstract: Embodiments encompassing a series of compositions containing photoacid generator (PAG) and a base are disclosed and claimed. The compositions are useful as permanent dielectric materials. More specifically, embodiments encompassing compositions containing a series of copolymers of a variety of norbornene-type cycloolefinic monomers and maleic anhydride in which maleic anhydride is fully or partially hydrolyzed (i.e., ring opened and fully or partially esterified), PAG and a base, which are useful in forming permanent dielectric materials having utility in a variety of electronic material applications, among various other uses, are disclosed.

Abstract: A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed due to an action of the acid, the resist composition including a base material component whose solubility in a developing solution is changed due to the action of an acid; and a compound represented by Formula (d1) in which Rb1 and Rb2 each independently represents —COO?, —COOH, or a hydroxyl group, where at least one of Rb1 and Rb2 represents —COO?, Rb3, Rb4, and Rb5 each independently represents a hydroxyl group or a halogen atom, Rb6 to Rb8 each independently represents an alkyl group, nb3 represents an integer of 0 to 4, nb4 and nb5 each independently represents an integer of 0 to 2, nb6 to nb8 each independently represents an integer of 0 to 5, m represents 1 or 2, and q represents an integer of 0 to 3.