Abstract: An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is excellent in LER performance and a collapse suppressing ability. Furthermore, the present invention provides a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes an acid-decomposable resin having a repeating unit represented by General Formula (1), and a compound that generates an acid upon irradiation with actinic rays or radiation.

Abstract: A photosensitive film of the present invention includes a carrier film having a first surface whose surface roughness is 0.1 to 0.4 ?m, and a photosensitive layer formed on the first surface, in which a haze of the carrier film is 30 to 65%, and a spectral haze at a wavelength of 405 nm of the carrier film, as measured by providing a transparent resin layer in which a difference between a refractive index of the transparent resin layer and a refractive index of the photosensitive layer is within ±0.02 on the first surface, is 0.1 to 9.0%.

Abstract: According to the present invention, an actinic ray-sensitive or radiation-sensitive resin composition including a resin P having a repeating unit represented by General Formula (P1) and a compound that generates an acid having a pKa of ?1.40 or more upon irradiation with actinic rays or radiation; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the composition, are provided. Mp represents a single bond or a divalent linking group. Lp represents a divalent linking group. Xp represents O, S, or NRN1. RN1 represents a hydrogen atom or a monovalent organic group. Rp represents a monovalent organic group.

Abstract: The present disclosure can provide a photosensitive resin composition, film, and electronic device having excellent high-resolution patterning at low light intensity, excellent pattern adhesion, fine patterning, and excellent cured film properties.

Abstract: The present disclosure relates to a dual-cure phase-separation type photosensitive resin composition for continuous 3D printing with high precision, including an acrylate having a cross-linkable double bond, a polyurethane prepolymer, a chain extender, and a photoinitiator. The polyurethane prepolymer is produced by a reaction between an isocyanate and a polyether polyol with a molecular weight larger than or equal to 4000 under heating and catalytic action. The photosensitive resin composition of the present disclosure is used in the continuous 3D printing to make high precision parts.

Abstract: Disclosed are a salt represented by formula (I), an acid generator and a resist composition: wherein Q1 and Q2 each represent a fluorine atom or a perfluoroalkyl group; R11 and R12 each represent a hydrogen atom, a fluorine atom or a perfluoroalkyl group; z represents an integer of 0 to 6; X0 represents *—CO—O—, *—O—CO—, etc.; L1 represents a single bond or a hydrocarbon group which may have a substituent; Ar represents an aromatic hydrocarbon group which may have a substituent; X1 represents an oxygen atom or a sulfur atom; R1 represents a halogen atom or a haloalkyl group; R2 represents a halogen atom, a hydroxy group, a haloalkyl group or an alkyl group; m1 represents an integer of 1 to 6; m2 represents an integer of 0 to 4; and Z+ represents an organic cation.

Abstract: A negative resist composition is provided comprising a base polymer and an acid generator in the form of a sulfonium salt consisting of a sulfonate anion having a maleimide group and a cation having a polymerizable double bond. The resist composition adapted for organic solvent development exhibits a high resolution and improved LWR or CDU.

Abstract: A photosensitive composition including a quantum dot dispersion, a reactive compound having at least two thiol groups, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes a carboxylic acid group-containing polymer and a quantum dot dispersed in the carboxylic acid group containing polymer, and wherein the carboxylic acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic moiety and not having a carboxylic acid group.

Abstract: A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.

Abstract: The present invention provides a polybenzoxazole precursor, which comprises a structure of formula (I): wherein the definitions of Y, Z, R1, i, j, and V are provided herein. By means of the polybenzoxazole precursor, the resin composition of the present invention is able to form a film with high frequency characteristics and high contrast.

Abstract: A cross-linked polymer including a structure wherein at least a portion of phenolic hydroxyl groups in the polymer is protected by a group represented by the following formula (1): wherein R1 represents an alkyl group having 1 to 5 carbons and n represents an integer from 1 to 5; and * represents a bond part of the phenolic hydroxyl group to a residue other than a hydrogen atom, and a structure wherein at least a portion of phenolic hydroxyl groups in the polymer is protected by a group represented by the following formula (2): wherein R2 represents a divalent saturated hydrocarbon group having 2 to 17 carbons, containing an aromatic ring; and * represents a bond part of the phenolic hydroxyl group to a residue other than a hydrogen atom, and the polymers are cross-linked to each other.

Abstract: A method produces a semiconductor device, the method having a step of transferring an underlayer by employing a resist underlayer film-forming composition containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane in a non-alcoholic solvent in the presence of a strong acid, followed by a step (G) of removing the patterned resist film, the patterned resist underlayer film, and/or particles with a sulfuric acid-hydrogen peroxide mixture (SPM) prepared by mixing of aqueous hydrogen peroxide with sulfuric acid and/or an ammonia-hydrogen peroxide mixture (SC1) prepared by mixing of aqueous hydrogen peroxide with aqueous ammonia, wherein: the hydrolyzable silane contains a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) (wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond).

Abstract: A radiation-sensitive resin composition includes: a polymer including a structural unit including an acid-labile group; and a compound represented by formula (1). R1, R2, and R3 each independently represent a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms; X1, X2, and X3 each independently represent a group represented by formula (2); a sum of d, e, and f is no less than 1; R4 represents a hydrocarbon group having 1 to 20 carbon atoms and R5 represents a hydrocarbon group having 1 to 20 carbon atoms, or R4 and R5 taken together represent a heterocyclic structure having 4 to 20 ring atoms, together with the sulfur atom to which R4 and R5 bond; n is 0 or 1; A? represents a monovalent sulfonic acid anion; and Y represents —COO—, —OCO—, or —N(R7)CO—.

Abstract: A radiation-sensitive resin composition includes: an onium salt compound represented by formula (1?); a resin including a structural unit having an acid-dissociable group; and a solvent. EA is a substituted or unsubstituted (?+?)-valent organic group having 1 to 40 carbon atoms; Z+ is a monovalent radiation-sensitive onium cation; and ? and ? are each independently 1 or 2.

Abstract: A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is a linking group.

Abstract: A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I): wherein, EWG, Y, R, and M+ are the same as described in the specification.

Abstract: Provided are a resist composition that can improve coatability (coating film formability) with respect to a substrate in spin coating and close adherence of a resist film and that can form a good pattern, and a resist film in which a good pattern is formed. The resist composition contains a polymer, a solvent, and an aromatic vinyl monomer, and has a content of the aromatic vinyl monomer relative to the polymer of not less than 10 mass ppm and not more than 30,000 mass ppm.

Abstract: A monomer has the structure wherein R is an organic group comprising a polymerizable carbon-carbon double bond or carbon-carbon triple bond; X and Y are independently at each occurrence hydrogen or a non-hydrogen substituent; EWG1 and EWG2 are independently at each occurrence an electron-withdrawing group; p is 0, 1, 2, 3, or 4; n is 1, 2, 3, or 4; and M+ is an organic cation. A polymer prepared from monomer is useful as a component of a photoresist composition.

Abstract: A resist composition containing a resin component (A1) having a constitutional unit (a01) and a constitutional unit (a02) derived from compounds each represented by General Formulae (a01-1) and (a02-1), a compound (B1) represented by General Formula (b1), and a compound represented by General Formula (d1-1) or a compound represented by General Formula (d1-2), in the formulae, Ct represents a tertiary carbon atom, a carbon atom at an ?-position of Ct constitutes a carbon-carbon unsaturated bond, Wa02 represents an aromatic hydrocarbon group, and Rb1 represents hydrocarbon group, where a fluorine atom is not contained