Abstract: This invention relates to a stripper composition for removing photoresist that may have excellent photoresist stripping force, inhibit corrosion of the under metal film in the stripping process, and effectively remove oxide, and a method for stripping photoresist using the same.

Abstract: A hardmask composition, a hardmask layer manufactured from the hardmask composition, and a method of forming patterns from the hardmask composition, the composition includes a polymer including a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2, and a solvent,

Abstract: An organotin precursor solution is described comprising an organic solvent, an optional additive, and an organotin composition represented by one or more organotin compounds represented by the formula RSnL3, wherein each R is independently a hydrocarbyl ligand having from 1 to 31 carbon atoms and each L is independently a hydrolysable ligand, wherein the total concentration of Sn is from about 0.001 M to about 0.5 M. The solvent can comprises a linear alcohol with from 1 to 6 carbon atoms, and the organotin precursor solution can have an initial water content from about 100 ppm to about 10,000 ppm, in which the organotin precursor solution has a reduced rate of water dissipation relative to an equivalent organotin precursor solution formed with 4-methyl-2-pentanol. The organotin precursor solutions can be prepared through the selection of an appropriate stabilizing compound, which can be a linear, short chain alcohol and an appropriate additive.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a photoresist layer comprising an organometallic compound over a substrate. The organometallic compound includes a metal core, at least one hydrolyzable ligand bonded to the metal core, and at least one photoacid generator ligand bonded to the metal core. The method further includes selectively exposing the photoresist layer to radiation and developing the photoresist layer to form a pattern in the photoresist layer.

Abstract: A positive resist material contains an acid generator, and a base polymer containing a repeating unit having two carboxyl groups whose hydrogen atoms are substituted with two tertiary carbon atoms each bonded to a double bond or triple bond. The repeating unit having two carboxyl groups whose hydrogen atoms are substituted with two tertiary carbon atoms each bonded to a double bond or triple bond is represented by a repeating unit-a in the following formula (1). Thus, the present invention provides: a positive resist material having higher sensitivity than conventional positive resist materials and smaller dimensional variation; and a patterning process.

Abstract: Provided is a photosensitive resin composition containing: (A) a silicone resin containing an acid-crosslinkable group; (B) an alicyclic epoxy compound represented by formula (B1) or (B2); and (C) a photo-acid-generating agent. (In the formula, R11 through R46 are each independently a hydrogen atom or a C1-8 saturated hydrocarbyl group.

Abstract: The present application relates to a compound of Chemical Formula 1, a binder resin, a negative-type photosensitive resin composition, and a display apparatus including a black bank formed using the same.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a photoresist layer over a substrate. The photoresist layer includes a polymer, a photoacid initiator and a crosslinker containing at least two crosslinking sites. The photoresist layer is then cured to crosslink the polymer, thereby forming a crosslinked polymer. Next, the photoresist layer is exposed to a radiation. An acid produced from exposure of the photoacid generator de-crosslinks the crosslinked polymer in exposed portions of the photoresist layer. The exposed portions of the photoresist layer are subsequently removed to form a patterned photoresist layer.

Abstract: Provided is a resist composition which contains a resin (A) and a solvent (B) that contains a compound (B1) represented by general formula (b-1), wherein the content of the active ingredients based on the total amount of the resist composition is 45% by mass or less. (In formula (b-1), R1 represents an alkyl group having from 1 to 10 carbon atoms.

Abstract: Methods and materials for improving the thermal stability of a metallic photoresist are disclosed. The metallic photoresist may comprise a metal core and one or more ligands, where each ligand is saturated and comprises from 1 to about 8 carbon atoms and at least two nitrogen atoms. Alternatively, a cross-linker may be used with the metallic photoresist, the cross-linker comprising a metal core and a plurality of cross-linking groups and having a molecular weight of about 1000 or less. Finally, an additive comprising carbonate or bicarbonate anions may be added during the formation of a developed photoresist layer. Each of these methods, independently or together, improve the thermal stability of the metallic photoresist, permitting improved line resolution.

Abstract: Disclosed are a salt represented by formula (I), an acid generator, and a resist composition: wherein Q1, Q2, R1 and R2 each represent a hydrogen atom, a fluorine atom, an alkyl group, etc.; z represents an integer of 0 to 6; X1 represents *—CO—O—, *—O—CO—, etc.; L1 and L2 each represent a single bond or an aliphatic hydrocarbon group; Ar1 represents an aromatic hydrocarbon group or a heterocyclic aromatic hydrocarbon group; R3 represents *—O—R10, *—O—CO—R10, etc., and R10 represents an acid-labile group; R4 represents a halogen atom, a haloalkyl group, or a hydrocarbon group; and m4 represents an integer of 0 to 8; and Z+ represent an organic cation.

Abstract: Manufacturing method includes forming photoresist layer including photoresist composition over substrate. Photoresist composition includes: photoactive compound, polymer, crosslinker. The polymer structure A1, A2, A3 independently C1-C30 aryl, alkyl, cycloalkyl, hydroxylalkyl, alkoxy, alkoxyl alkyl, acetyl, acetylalkyl, carboxyl, alkyl carboxyl, cycloalkyl carboxyl, hydrocarbon ring, heterocyclic, chain, ring, 3-D structure; R1 is C4-C15 chain, cyclic, 3-D structure alkyl, cycloalkyl, hydroxylalkyl, alkoxy, or alkoxyl alkyl; proportion of x, y, and z in polymer is 0?x/(x+y+z)?1, 0?y/(x+y+z)?1, and 0?z/(x+y+z)?1, x, y, and z all not 0 for same polymer.

Abstract: It is an object of the present invention to form a resist film that is highly sensitive and enables high-resolution patterning. The present invention relates to a resist material that comprises a polymer comprising a unit derived from a structure represented by the following formula (101). In the formula (101), R1 each independently represents a hydrogen atom, an alkyl group optionally having a substituent, an acyl group optionally having a substituent, an allyl group optionally having a substituent, an alkoxy group optionally having a substituent, or an alkylsilyl group optionally having a substituent, and a plurality of R1 may be the same or different. R11 represents a hydrogen atom or an alkyl group optionally having a substituent. R2 represents a hydrogen atom, an alkyl group, a fluorine atom, a chlorine atom, a bromine atom, or a halogenated alkyl group; and Y1 represents a single bond or a linking group.

Abstract: A photosensitive resin composition including a silsesquioxane-based copolymer obtained by copolymerizing a first monomer represented by Chemical Formula 1 (R1—R2—Si(R3)3), a second monomer represented by Chemical Formula 2 ((R4)n—Si(R5)4-n), a third monomer represented by Chemical Formula 3 (Si(R6)4), and a fourth monomer represented by Chemical Formula 4 ((R7)3—Si—R8—Si—(R7)3) are provided.

Abstract: A photosensitive resin film and application thereof are provided. When the photosensitive resin film is subjected to a thermogravimetric analysis under the conditions of heating at a rate of 5° C./min from 40° C. to 200° C. and then keeping the temperature at 200° C. for 10 min, the absolute value of the first derivative of the weight percentage with respect to time within the range of 0 to 40 min is higher than 0.1%/min and not higher than 1.0%/min.

Abstract: A resist composition comprising an acid compound, a photoacid generator of iodonium salt type and/or a photo-decomposable quencher of iodonium salt type, and a base polymer has a high sensitivity, reduced edge roughness or size variation, improved resolution and satisfactory storage stability.

Abstract: The present invention relates to a photoresist composition comprising a polymer(s), a photo acid generator(s), a (C) compound(s) comprising unit EO and unit PO, and a solvent(s). And the present invention relates to a method for manufacturing a photoresist coating, etched photoresist coating, and etched Si containing layer(s). And the present invention relates to a method for a a manufacturing a device.

Abstract: The present invention relates to a naphthalimide sulfonate derivative, and a photoacid generator and a photoresist composition each comprising same and, more specifically, to a naphthalimide sulfonate derivative compound, and a photoacid generator and a photoresist composition each comprising same, wherein the compound has excellent absorbance for light of i-line (365 nm) wavelength, is greatly easy to prepare into a polymerizable composition due to very high solubility in an organic solvent, has good thermal stability, and shows a favorable acid generation rate.

Abstract: A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses the composition for forming a resist underlayer film. (In formula (1), A1, A2, A3, A4, A5, and A6 each independently represent a hydrogen atom, methyl group, or ethyl group; Q1 represents a divalent organic group; R1 represents a tetravalent organic group; and R2 represents an alkenyl group or alkynyl group having 2-10 carbon atoms.) The film-forming composition contains a solvent and a polymer that has a unit structure given by formula (1).

Abstract: A method for reducing resist consumption (RRC) is provided. The method includes treating a surface of a substrate using a RRC composition and forming a photoresist layer comprising a metal-containing material on the RRC composition treated surface. The RRC composition includes a solvent and an acid or a base. The solvent has a dispersion parameter between 10 and 25. The acid has an acid dissociation constant between ?20 and 6.8. The base having an acid dissociation constant between 7.2 and 45.