Abstract: The present disclosure is directed to organotin cluster compounds having formula (I) and their use as photoresists in extreme ultraviolet lithography processes.

Abstract: The present invention is a polymer having a polyamide structural unit, a polyamide-imide structural unit, or a polyimide structural unit, selected from a polyamide, a polyamide-imide, a polyimide, a polyimide precursor, a polybenzoxazole, and a polybenzoxazole precursor, including a reaction product of a diamine containing at least one of a diamine shown by the following general formula (1) and a diamine shown by the following general formula (2), together with at least one of a tetracarboxylic dianhydride shown by the following general formula (3) as well as a dicarboxylic acid and a dicarboxylic halide shown by the following general formula (4). This provides a polymer which is soluble in a safe organic solvent used widely, and is usable as a base resin of a positive photosensitive resin composition that is soluble in an aqueous alkaline solution and capable of forming a fine pattern to give higher resolution.

Abstract: The present disclosure relates to a photoresist composition, a method for preparing the same, and a patterning method. The photoresist composition includes: 1 wt % to 10 wt % of a photosensitizer; 10 wt % to 20 wt % of a phenolic resin; 0.1 wt % to 5.5 wt % of an additive; and 75 wt % to 88 wt % of a solvent, based on the total weight of the photoresist composition, in which the photosensitizer includes: 20 wt % to 70 wt % of a first photosensitive compound represented by formula (1), 20 wt % to 70 wt % of a second photosensitive compound represented by formula (2), and 1 wt % to 35 wt % of a third photosensitive compound represented by formula (3), based on the total weight of the photosensitizer. The photoresist composition of the present disclosure simultaneously guarantees high resolution and high sensitivity, and can meet actual production requirements.

Abstract: A transfer film includes a temporary support; and a photosensitive transparent resin layer positioned on the temporary support, in which the photosensitive transparent resin layer includes a binder polymer, an ethylenically unsaturated compound, a photopolymerization initiator, and a compound capable of reacting with acid due to heating, and the compound capable of reacting with acid due to heating includes a polymerizable group. In addition, an electrode protective film using the transfer film, a laminate, a capacitive input device, and a manufacturing method of a touch panel are provided.

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

Abstract: A radiation-sensitive resin composition includes: a resin including a structure unit having an acid-dissociable group; a radiation-sensitive acid generator; and a solvent. The radiation-sensitive acid generator includes at least two of compounds represented by formulae (1) to (3), provided that the compound represented by formula (1) and the compound represented by formula (3) within the scope of the compound represented by formula (2) are excluded. In the formulae (1) to (3), R1, R2 and R3 are each independently a group having a cyclic structure; X11, X12, X21, X22, X31 and X32 are each independently a hydrogen atom, a fluorine atom, or a fluorinated hydrocarbon group, provided that both X11 and X12, both X21 and X22, and both X31 and X32 are not a hydrogen atom, respectively.

Abstract: Disclosed is a resist composition including a compound represented by formula (I), a resin having an acid-labile group and an acid generator, the resin having an acid-labile group including at least one selected from the group consisting of a structural unit represented by formula (a1-1) and a structural unit represented by formula (a1-2):

Abstract: An object of the present invention is to provide a pattern forming method which is excellent in developability and defect suppression performance. Another object of the present invention is to provide a method for producing an electronic device including the pattern forming method. Still another object of the present invention is to provide a kit capable of forming a pattern which is excellent in developability and defect suppression performance.

Abstract: An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

Abstract: A resist composition including: a compound including an anion moiety and a cation moiety and represented by the following Formula (bd1); and an organic solvent having a hydroxyl group in which Rx1 to Rx4 each represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; Ry1 and Ry2 each independently represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; Rz1 to Rz4 each represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; at least one of Rx1 to Rx4, Ry1 and Ry2 and Rz1 to Rz4 has an anionic group; and Mm+ represents an organic cation)

Abstract: A radiation-sensitive resin composition includes: a resin containing a structural unit A represented by formula (1); at least one radiation-sensitive acid generator selected from the group consisting of a radiation-sensitive acid generator represented by formula (2-1) and a radiation-sensitive acid generator represented formula (2-2); and a solvent. At least one R3 is an acid-dissociable group; and R41 is a hydrogen atom or a protective group to be deprotected by action of an acid. At least one of Rf1 and Rf2 is a fluorine atom or a fluoroalkyl group; R5a is a monovalent organic group having a cyclic structure; X1+ is a monovalent onium cation; R5b is a monovalent organic group, and X2+ is a monovalent onium cation whose atom having a positive charge is not an atom forming a cyclic structure.

Abstract: A resist composition including a compound represented by formula (bd1), a total amount of the acid-generator component and the basic component being 20 to 70 parts by weight, relative to 100 parts by weight of the base material component. In the formula, Rx1 to Rx4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rx1 to Rx4 may be mutually bonded to form a ring structure; Ry1 and Ry2 represents a hydrogen atom or a hydrocarbon group, or Ry1 and Ry2 may be mutually bonded to form a ring structure; Rz1 to Rz4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rz1 to Rz4 may be mutually bonded to form a ring structure; provided that at least one of Rx1 to Rx4, Ry1, Ry2 and Rz1 to Rz4 has an anionic group; and Mm+ represents an m-valent organic cation).

Abstract: A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.

Abstract: A resist underlayer composition and a method of forming patterns using a resist underlayer composition, the resist underlayer composition including a polymer, the polymer including a structural unit that is a reaction product of an isocyanurate compound, the isocyanurate compound having at least one thiol group thereon, and a solvent.

Abstract: Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1: wherein, in Formula 1, CY, A1, A2, and B are respectively described in the specification.

Abstract: Provided is a negative resist pattern-forming method that enables a resist pattern with fewer development defects to be formed while favorable water repellency of the surface of the upper layer film is maintained. A negative resist pattern-forming method includes the steps of: forming a resist film using a radiation-sensitive resin composition; forming an upper layer film on one face of the resist film using a composition for upper layer film formation; subjecting the resist film having the upper layer film formed thereon to liquid immersion lithography; and developing the resist film subjected to the liquid immersion lithography with a developer solution containing an organic solvent, wherein at least one of the radiation-sensitive resin composition and the composition for upper layer film formation contains a fluorine atom.

Abstract: The present disclosure relates to novel negative-type photoresist composition and methods of their use. The disclosure further relates to multiple trigger photoresist processes which allow for the improvement in contrast, resolution, and/or line edges roughness in some systems without giving up sensitivity. The photoresist compositions and the methods of the current disclosure are ideal for fine patent processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays and changed particle. The disclosure further relates to sensitivity enhancing materials useful in the disclosed compositions and methods.

Abstract: A resist underlayer film-forming composition for lithography including a copolymer having a structural unit of the following Formula (1) to Formula (3), a crosslinking agent, an organic acid catalyst, and a solvent: (wherein R1s are independently a hydrogen atom or a methyl group, R2 is a C1-3 alkylene group, A is a protective group, R3 is an organic group having a 4-membered ring to 7-membered ring lactone framework, adamantane framework, tricyclodecane framework or norbornane framework, R4 is a linear, branched or cyclic organic group having a carbon atom number of 1 to 12 in which at least one hydrogen atom is substituted with a fluoro group and which optionally has at least one hydroxy group as a substituent).

Abstract: A composition for an electrode protective film of an electrostatic capacitance-type input device including (a) a binder polymer, (b) a photopolymerizable compound having an ethylenic unsaturated group, (c) a photopolymerization initiator, and (d) a compound capable of reacting with acidic groups or alcoholic hydroxy groups by heating, in which (b) the photopolymerizable compound having an ethylenic unsaturated group includes (b1) a photopolymerizable compound in which a value obtained by dividing a weight-average molecular weight by an average number of polymerizable groups is 270 or more can be used to form electrode protective films of electrostatic capacitance-type input devices having favorable bending resistance; an electrode protective film of an electrostatic capacitance-type input device; a transfer film; a laminate; an electrostatic capacitance-type input device; and an image display device.

Abstract: Provided is a polymer that when used as a main chain scission-type positive resist, can sufficiently inhibit resist pattern collapse, can favorably form a clear resist pattern, and can also improve sensitivity. The polymer includes a monomer unit (A) represented by general formula (I), shown below, and a monomer unit (B) represented by general formula (II), shown below. [In formula (I), R1 is an organic group including not fewer than 5 and not more than 7 fluorine atoms. In formula (II), R2 is a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R3 is a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of not less than 0 and not more than 5, and p+q=5.