Abstract: Patterning compositions are described based on organo tin dodecamers with hydrocarbyl ligands, oxo ligands, hydroxo ligands and carboxylato ligands. Alternative dodecamer embodiments have organo tin ligands in place of hydrocarbyl ligands. The organo tin ligands can be incorporated into the dodecamers from a monomer with the structure (RCC)3SnQ, where R is a hydrocarbyl group and Q is a alkyl tin moiety with a carbon bonded to the Sn atom of the monomer and with a Sn bonded as a replacement of a quaternary carbon atom with bonds to 4 carbon atoms. Some or all of the carboxylato and hydroxyl ligands can be replaced with fluoride ions. Good EUV patterning results are obtained with the dodecamer based patterning compositions.

Abstract: A photosensitive resin printing original plate is disclosed in which a side surface light-blocking layer does not peel off from a metal support during handling of the printing original plate, and which enables efficient production of the side surface light-blocking layer. A water-developable photosensitive resin printing original plate, includes at least: a support; and a photosensitive resin layer arranged on the support, in which a peripheral side surface of the water-developable photosensitive resin printing original plate is covered with a light-blocking layer; the light-blocking layer contains carbon black and a vinyl polymer at a mass ratio of 80/20 to 30/70; and the vinyl polymer is an alcohol-soluble vinyl polymer containing 25 to 65 mol % of a hydroxyl group with respect to a constituent monomer unit in a molecule (in the case of being chemically modified, a constituent monomer unit after the modification).

Abstract: A photocurable composition can comprise a polymerizable material, a fullerene or fullerene derivative in an amount of at least 0.2 wt % and not greater than 5.0 wt %, and a photoinitiator and may be adapted for AIP or NIL processing. A photo-cured layer made from the photocurable composition can have an improved thermal stability in comparison to a photo-cured layer made from the same photocurable composition except not containing a fullerene or fullerene derivative.

Abstract: An onium salt having a partial structure of formula (A) is provided wherein Ra1 and Ra2 are hydrogen or a C1-C10 hydrocarbyl group in which hydrogen may be substituted by halogen and —CH2— may be replaced by —O— or —C(?O)—, both Ra1 and Ra2 are not hydrogen at the same time, Ra1 and Ra2 may bond together to form an aliphatic ring. A chemically amplified negative resist composition comprising the onium salt as acid generator forms a pattern of good profile having a high sensitivity, improved dissolution contrast, reduced LWR and improved CDU.

Abstract: Methods and materials for making a semiconductor device are described. The method includes forming a photoresist over a substrate. The photoresist includes an acid-labile group (ALG) connected to a polar unit. The method also includes exposing the photoresist to a radiation beam, baking the photoresist and performing a developing process to the photoresist.

Abstract: An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is excellent in LER performance and a collapse suppressing ability. Furthermore, the present invention provides a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes an acid-decomposable resin having a repeating unit represented by General Formula (1), and a compound that generates an acid upon irradiation with actinic rays or radiation.

Abstract: According to the present invention, an actinic ray-sensitive or radiation-sensitive resin composition including a resin P having a repeating unit represented by General Formula (P1) and a compound that generates an acid having a pKa of ?1.40 or more upon irradiation with actinic rays or radiation; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the composition, are provided. Mp represents a single bond or a divalent linking group. Lp represents a divalent linking group. Xp represents O, S, or NRN1. RN1 represents a hydrogen atom or a monovalent organic group. Rp represents a monovalent organic group.

Abstract: A photosensitive film of the present invention includes a carrier film having a first surface whose surface roughness is 0.1 to 0.4 ?m, and a photosensitive layer formed on the first surface, in which a haze of the carrier film is 30 to 65%, and a spectral haze at a wavelength of 405 nm of the carrier film, as measured by providing a transparent resin layer in which a difference between a refractive index of the transparent resin layer and a refractive index of the photosensitive layer is within ±0.02 on the first surface, is 0.1 to 9.0%.

Abstract: The present disclosure can provide a photosensitive resin composition, film, and electronic device having excellent high-resolution patterning at low light intensity, excellent pattern adhesion, fine patterning, and excellent cured film properties.

Abstract: Disclosed are a salt represented by formula (I), an acid generator and a resist composition: wherein Q1 and Q2 each represent a fluorine atom or a perfluoroalkyl group; R11 and R12 each represent a hydrogen atom, a fluorine atom or a perfluoroalkyl group; z represents an integer of 0 to 6; X0 represents *—CO—O—, *—O—CO—, etc.; L1 represents a single bond or a hydrocarbon group which may have a substituent; Ar represents an aromatic hydrocarbon group which may have a substituent; X1 represents an oxygen atom or a sulfur atom; R1 represents a halogen atom or a haloalkyl group; R2 represents a halogen atom, a hydroxy group, a haloalkyl group or an alkyl group; m1 represents an integer of 1 to 6; m2 represents an integer of 0 to 4; and Z+ represents an organic cation.

Abstract: The present disclosure relates to a dual-cure phase-separation type photosensitive resin composition for continuous 3D printing with high precision, including an acrylate having a cross-linkable double bond, a polyurethane prepolymer, a chain extender, and a photoinitiator. The polyurethane prepolymer is produced by a reaction between an isocyanate and a polyether polyol with a molecular weight larger than or equal to 4000 under heating and catalytic action. The photosensitive resin composition of the present disclosure is used in the continuous 3D printing to make high precision parts.

Abstract: A negative resist composition is provided comprising a base polymer and an acid generator in the form of a sulfonium salt consisting of a sulfonate anion having a maleimide group and a cation having a polymerizable double bond. The resist composition adapted for organic solvent development exhibits a high resolution and improved LWR or CDU.

Abstract: A photosensitive composition including a quantum dot dispersion, a reactive compound having at least two thiol groups, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes a carboxylic acid group-containing polymer and a quantum dot dispersed in the carboxylic acid group containing polymer, and wherein the carboxylic acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic moiety and not having a carboxylic acid group.

Abstract: The present invention provides a polybenzoxazole precursor, which comprises a structure of formula (I): wherein the definitions of Y, Z, R1, i, j, and V are provided herein. By means of the polybenzoxazole precursor, the resin composition of the present invention is able to form a film with high frequency characteristics and high contrast.

Abstract: A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.

Abstract: A cross-linked polymer including a structure wherein at least a portion of phenolic hydroxyl groups in the polymer is protected by a group represented by the following formula (1): wherein R1 represents an alkyl group having 1 to 5 carbons and n represents an integer from 1 to 5; and * represents a bond part of the phenolic hydroxyl group to a residue other than a hydrogen atom, and a structure wherein at least a portion of phenolic hydroxyl groups in the polymer is protected by a group represented by the following formula (2): wherein R2 represents a divalent saturated hydrocarbon group having 2 to 17 carbons, containing an aromatic ring; and * represents a bond part of the phenolic hydroxyl group to a residue other than a hydrogen atom, and the polymers are cross-linked to each other.

Abstract: A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is a linking group.

Abstract: A radiation-sensitive resin composition includes: a polymer including a structural unit including an acid-labile group; and a compound represented by formula (1). R1, R2, and R3 each independently represent a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms; X1, X2, and X3 each independently represent a group represented by formula (2); a sum of d, e, and f is no less than 1; R4 represents a hydrocarbon group having 1 to 20 carbon atoms and R5 represents a hydrocarbon group having 1 to 20 carbon atoms, or R4 and R5 taken together represent a heterocyclic structure having 4 to 20 ring atoms, together with the sulfur atom to which R4 and R5 bond; n is 0 or 1; A? represents a monovalent sulfonic acid anion; and Y represents —COO—, —OCO—, or —N(R7)CO—.

Abstract: A method produces a semiconductor device, the method having a step of transferring an underlayer by employing a resist underlayer film-forming composition containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane in a non-alcoholic solvent in the presence of a strong acid, followed by a step (G) of removing the patterned resist film, the patterned resist underlayer film, and/or particles with a sulfuric acid-hydrogen peroxide mixture (SPM) prepared by mixing of aqueous hydrogen peroxide with sulfuric acid and/or an ammonia-hydrogen peroxide mixture (SC1) prepared by mixing of aqueous hydrogen peroxide with aqueous ammonia, wherein: the hydrolyzable silane contains a hydrolyzable silane of the following Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) (wherein R1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond).