Abstract: Embodiments of a microstructure that allows arrest of contaminant infiltration includes an inter layer and at least one highly reactive ceramic layer. The inter layer is not reactive to an infiltrating reactive species. The HRC layer includes materials that react with a reactive contaminant species to slow or arrest infiltration of such contaminant species.

Abstract: A thermal barrier system includes a protective coating on a substrate, and a ceramic feature layer attached to the protective coating via an adhesive spray coat.

Abstract: An alumina substrate on which an AlN layer is formed and that causes less warping, and a substrate material strong enough to withstand normal handling when an AlN crystal is grown upon it, and prevents cracking and fracturing of a grown crystal when stress is applied during growing or cooling. The substrate has a gap and a rare earth element-containing region inside the AlN layer or at the interface between the AlN layer and the alumina substrate. Warping of the AlN layer can be reduced by lattice-mismatch stress being concentrated at the region and releasing of stress by the gap. The region having a concentrating of stress, and the gap having a low mechanical strength, can induce crackings and fracturings. As a result, contamination of crackings and fracturings into the crystal grown on the substrate can be prevented. The region can ensure a level of mechanical strength sufficient for handling.

Abstract: A coated substrate is provided that can include a substrate defining a surface, and an abradable coating on the surface of the substrate. The abradable coating can comprise La2-xAxMo2-y-y?WyBy?O9-? forming a crystalline structure, where A comprises Li, Na, K, Rb, Cs, Sc, Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Th, Be, Mg, Ca, Sr, Ba, Cu, Bi, Cd, Zn, Ag, Au, Pt, Ir, Rh, Ru, Pd, or combinations thereof; 0<x?about 0.2 (e.g., about 0.1?x?about 0.15); 0?y?about 1.5 (e.g., about 0.01?y?about 1.5); B comprises Ta, Nb, V, Fe, Cr, Mn, Co, Ni, Sn, Ga, Al, Re, In, S, or combinations thereof; 0?y??about 0.2, wherein the sum of y and y? is about 0.01 to about 1.6; and 0???about 0.2.

Abstract: The present invention aims to provide an inorganic substance-laminated sheet that can be used suitably for applications that require high gas barrier properties. The inorganic substance-laminated sheet includes a sheet having a dispersed structure with a structural period of 0.001 ?m to 100 ?m on at least one surface and an inorganic substance layer covering the surface having the dispersed structure.

Abstract: An electrical steel sheet is provided with insulating coating. The insulating coating contains Si and Fe. The coating weight of Si in the insulating coating in terms of SiO2 is 50% to 99% of the total coating weight. The ratio (Fe/Si) of the content of Fe to the content of Si in the insulating coating is 0.01 to 0.6 on a molar basis. The ratio (C (the organic resin+the lubricant)/(Fe2O3+SiO2)) of the coating weight of the organic resin and/or the lubricant in terms of C to the sum of the coating weight of Fe in terms of Fe2O3 and the coating weight of Si in terms of SiO2 preferably is 0.05 to 0.8.

Abstract: A corner arrangement for an article of furniture includes, but is not limited to a first core having a first end and a second core having a second end. The second core is adjacent to, and substantially transverse to, the first core such that the first end and the second end form a corner. The corner arrangement further includes a first skin extending and adhered along an outer surface of the first core and a second skin extending and adhered along an outer surface of the second core. The second skin further extends and is adhered around an outside portion of the corner and along either a portion of the outer surface of the first core or a portion of the first skin. The first skin and the second skin cooperate to affix the second core to the first core without any mechanical fasteners.

Abstract: A coating system on a CMC substrate is provided, along with methods of its tape deposition onto a substrate. The coating system can include a bond coat on a surface of the CMC substrate; a first rare earth silicate coating on the bond coat; a first sacrificial coating of a first reinforced rare earth silicate matrix on the at least one rare earth silicate layer; a second rare earth silicate coating on the sacrificial coating; a second sacrificial coating of a second reinforced rare earth silicate matrix on the second rare earth silicate coating; a third rare earth silicate coating on the second sacrificial coating; and an outer layer on the third rare earth silicate coating. The first sacrificial coating and the second sacrificial coating have, independently, a thickness of about 4 mils to about 40 mils.

Abstract: The invention provides a gas barrier laminated film having high impact resistance when a heterolayer is formed on a thin film layer. The laminated film includes a flexible substrate and a thin film layer formed on at least one surface of the substrate, wherein the thin film layer contains Si, O, and C, and the ratio of the number of carbon atoms to the number of silicon atoms which is calculated using peaks each corresponding to each binding energy of 2p of Si, 1s of O, 1s of N, and 1s of C obtained from wide scan spectrums is in the range defined by the following formula (1) when the surface of the thin film layer is subjected to X-ray photoelectron spectrometry, and a intensity ratio of a peak intensity (I2) at 1240 to 1290 cm?1 to a peak intensity (I1) at 950 to 1050 cm?1 is in the range defined by the following formula (2) when the surface of the thin film layer is measured by an ATR method in infrared spectrometry: 0.01<C/Si?0.02??(1) 0.01?I2/I1<0.05??(2).

Abstract: A silicon epitaxial wafer including: a second intermediate epitaxial layer on a silicon substrate produced by being cut from a silicon single crystal ingot grown by the CZ method so as to have a carbon concentration ranging from 3×1016 to 2×1017 atoms/cm3, a first intermediate epitaxial layer doped with a dopant, and an epitaxial layer of a device forming region stacked on the first intermediate epitaxial layer, and to a method of producing this wafer. Also providing an industrially excellent silicon epitaxial wafer that is produced with a silicon substrate doped with carbon and used as a semiconductor device substrate such as a memory, a logic, or a solid-state image sensor, and a method of producing this silicon epitaxial wafer.

Abstract: Methods for forming a metal oxide electrolyte improve ionic conductivity. Some of those methods involve applying a first metal compound to a substrate, converting that metal compound to a metal oxide, applying a different metal compound to the metal oxide, and converting the different metal compound to form a second metal oxide. Electrolytes so formed can be used in solid oxide fuel cells, electrolyzers, and sensors, among other applications.

Abstract: The present invention relates to composition comprising a blend of at least one boron source and at least one silicon source, and the composition further comprises particles selected from particles having wear resistance properties, particles having surface enhancing properties, particles having catalytic properties or combinations thereof, wherein the blend comprises boron and silicon in a weight ratio boron to silicon within a range from about 3:100 wt:wt to about 100:3 wt:wt, wherein silicon and boron are present in the blend in at least 25 wt %, and wherein the at least one boron source and the at least one silicon source are oxygen free except for inevitable amounts of contaminating oxygen, and wherein the blend is a mechanical blend of particles in and the particles have an average particle size less than 250 ?m. The present invention relates further to a method for providing a coated product and a coated product obtained by the method.

Abstract: In some examples, an article may include a substrate and a coating on the substrate. In accordance with some of these examples, the coating may include a bond layer and an overlying layer comprising at least one oxide. In some examples, the bond layer comprises silicon metal and at least one of a transition metal carbide, a transition metal boride, or a transition metal nitride.

Abstract: A supporting substrate for a composite substrate comprises a ceramic and has a polished surface for use in bonding. An orientation degree of the ceramic forming the supporting substrate at the polished surface is 50% or higher, and an aspect ratio of each crystal grain included in the supporting substrate is 5.0 or less.

Abstract: The present invention is a gas barrier laminate comprising a base and a gas barrier unit, the gas barrier unit comprising at least two inorganic layers, at least one of the at least two inorganic layers being a silicon oxynitride layer, the silicon oxynitride layer including a composition-gradient region that has a thickness of 25 nm or more, the composition-gradient region being a region in which a content ratio of oxygen decreases and a content ratio of nitrogen increases in a thickness direction toward the base, and a ratio of the thickness of the composition-gradient region to the thickness of the entire silicon oxynitride layer being 0.15 or more. The present invention also relates to: an electronic device member that includes the gas barrier laminate, and an electronic device that includes the electronic device member.

Abstract: The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.

Abstract: Materials, devices, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies. Device configurations may be formed from the layer according to a predetermined pattern using lithographic and/or milling techniques.

Abstract: Transparent conducting films including an alkaline earth, transition metal oxide and their optimization of electrical conductivity and optical transparency by aliovalent substitution, which are useful as electrodes for semiconductors and other electronic devices are disclosed. Such materials include thin films of an aliovalent substituted transition metal oxides of Formula (I): A1-xA?xB1-yB?yO3-d (I) or a transition metal oxide of Formula (II): (ABO3-d)m(A?B?O3-d?)n.

Abstract: A turbine engine part includes at least a substrate, and present on the substrate, a ceramic coating for protection against calcium and magnesium aluminosilicates, the ceramic coating including Al2O3 at a molar content lying in the range 33% to 49%, Y3Al5O12 at a molar content lying in the range 21% to 53%, and yttria-stabilized zirconia at a molar content lying in the range 13% to 31%.

Abstract: A compound is provided that has the formula: Ln4-x-zBxDzM2-n-yAnByO9, where Ln comprises La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof; x is 0 to about 2; D is La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, where: D is not equal to Ln; if D is La, Ce, Pr, Nd, Pm, Sm, or a mixture thereof, then z is 0 to less than 4; if D is Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or a mixture thereof, then z is 0 to about 2; M comprises Ga, Al, or a combination thereof; A comprises Fe, In, or a combination thereof; n is 0 to about 1; y is 0 to about 1; and x+y is greater than 0. In one embodiment, a composition is generally provided that includes a silicon-containing material and such a boron-doped refractory compound.