Abstract: An acoustic wave device includes a support substrate and first and second resonant sections adjacent to each other on the support substrate. Each of the first and second resonant sections includes a piezoelectric thin film, an IDT electrode on the piezoelectric thin film, and a support layer surrounding the piezoelectric thin film in a plan view of the acoustic wave device. The support layer has a different linear expansion coefficient from the piezoelectric thin film. The piezoelectric thin film in the first resonant section and the piezoelectric thin film in the second resonant section are divided by the support layer between the resonant section and the resonant section.

Abstract: The present disclosure provides a film bulk acoustic resonator and its fabrication method, a filter, and a radio frequency communication system. The film bulk acoustic resonator includes a first substrate and a support layer disposed on the first substrate, where a cavity is formed in the support layer; a piezoelectric stacked layer covering the cavity, where the piezoelectric stacked layer includes an active resonance region and an inactive resonance region surrounding the active resonance region; and at least two trenches, arranged at a junction of the active resonance region and the inactive resonance region to define a range of the active resonance region. The at least two trenches include a first trench and a second trench; the second trench passes through the second electrode layer and the piezoelectric layer; and the first trench passes the first electrode and the piezoelectric layer and is connected to the cavity.

Abstract: In some embodiments, a radio-frequency circuit or device can include a filter circuit having an input node and an output node. The filter circuit can further include a first assembly having one or more bulk acoustic wave resonators implemented electrically between the input node and the output node, and configured to filter a signal. The filter circuit can further include a second assembly having one or more surface acoustic wave resonators implemented electrically relative to the first assembly, and configured to suppress one or more harmonics resulting from the filtering of the signal by the first assembly.

Abstract: A MEMS device may include: (i) a lower cavity, including a first island, formed within a first layer of the MEMS device; (ii) an upper cavity, including a second island, formed within a second layer of the MEMS device; (iii) a MEMS resonating element arranged in a device layer of the MEMS device and anchored via the first and second islands; (iv) a first set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an in-plane mode that is arranged in the device layer of the MEMS device; and (v) a second set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an out-of-plane mode that is electrically isolated from the first set of electrodes and located in the first or second layer of the MEMS device, and wherein the out-of-plane mode is a torsional mode or a saddle mode.

Abstract: Techniques are described herein for dynamically adjusting a resonant frequency of a resonance circuit to optimize power transfer to a mirror device such as a MEMS mirror. A variable capacitance circuit can be operated responsive to a bias control signal. A capacitance control circuit can vary the bias control signal to the resonance circuit responsive to a sense signal. The sense circuit is configured to generate the sense signal responsive to an output of the mirror device. By monitoring a signal level from the output of the mirror device 130, and adjusting the bias control signal of the resonance circuit, the exact resonance frequency of the resonance circuit can be adjusted until a peak signal level is observed, thus improving the efficiency of the energy transferred from the driver circuit 110 to the mirror device 130, and counteracting the impact of parasitic capacitances on the resonance.

Abstract: A surface acoustic wave (SAW) filter includes a bottom substrate, a piezoelectric layer disposed above the bottom substrate, the piezoelectric layer having a bottom surface facing the bottom substrate and a top surface opposite to the bottom surface, a lower cavity disposed below the piezoelectric layer, an interdigital transducer (IDT) disposed on the top surface of the piezoelectric layer, and a back electrode disposed on the bottom surface of the piezoelectric layer, and exposed in the lower cavity.

Abstract: MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.

Abstract: Aspects of this disclosure relate to a bulk acoustic wave device with a floating raised frame structure. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a floating raised frame structure positioned on a same side of the piezoelectric layer as the first electrode and spaced apart from the first electrode. The floating raised frame structure is at a floating potential. The bulk acoustic wave device can suppress a raised frame mode. Related methods, filters, multiplexers, radio frequency front ends, radio frequency modules, and wireless communication devices are disclosed.

Abstract: Disclosed are non-linear transmission lines using ferromagnetic materials to generate ferromagnetic resonance oscillations. In one aspect, a non-linear transmission line apparatus is disclosed. The apparatus includes an outer conductor having a first side and a second internally facing side, and an inner conductor positioned internal to the non-linear transmission line apparatus. The apparatus further includes a ferromagnetic material surrounding the inner conductor, wherein the ferromagnetic material comprises nanoparticles of an ?-polymorph of iron oxide expressed as ?-Fe2O3. The apparatus also includes a first dielectric material positioned between the outer conductor and the inner conductor, the dielectric material in contact with both the ferromagnetic material and with the second internally facing side of the outer conductor, wherein the outer conductor, the inner conductor, the dielectric material and the ferromagnetic material form the nonlinear transmission line.

Abstract: A laterally excited bulk acoustic wave device is disclosed. The laterally excited bulk acoustic wave device can include a first solid acoustic mirror, a second solid acoustic mirror, a piezoelectric layer that is positioned between the first solid acoustic mirror and the second solid acoustic mirror, an interdigital transducer electrode on the piezoelectric layer, and a support substrate arranged to dissipate heat associated with the bulk acoustic wave. The interdigital transducer electrode is arranged to laterally excite a bulk acoustic wave. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the bulk acoustic wave. The first solid acoustic mirror is positioned on the support substrate.

Abstract: The present disclosure relates to a Bulk Acoustic Wave (BAW) device with a substantially symmetrical structure in a vertical direction. The disclosed BAW device includes a main device region having a top electrode, a bottom electrode, and a piezoelectric layer sandwiched between the top electrode and the bottom electrode, a bottom reflector section underneath the bottom electrode, a bottom substrate underneath the bottom reflector section, a top reflector section over the top electrode, and a top substrate over the bottom reflector section. Herein, the bottom reflector section, the bottom substrate, the top reflector section, and the top substrate are configured so that a neutral plane of the BAW device is positioned at a center of the piezoelectric layer.

Abstract: Aspects of this disclosure relate to a surface acoustic wave resonator having a multi-layer substrate with heat dissipation. The multi-layer substrate includes a support substrate, a piezoelectric layer, and a thermally conductive layer configured to dissipate heat associated with the surface acoustic wave resonator. The thermally conductive layer is disposed between the support substrate and the piezoelectric layer. Related surface acoustic wave filters, radio frequency modules, and wireless communication devices are also disclosed.

Abstract: A SAW transducer and a SAW resonator are proposed composed of consecutively arranged unit cells of length L. Slight geometry or material variations such as variations of the metallization ration or the unit cell length L affecting the pitch) between these unit cells result in improved spurious mode suppression while the main mode performance is unaffected.

Abstract: Aspects of this disclosure relate to a surface acoustic wave device. The surface acoustic wave device includes a piezoelectric layer and an interdigital transducer. The interdigital transducer electrode includes a pair of electrodes, each electrode having a bus bar and fingers extending from the bus bar. The interdigital transducer electrode has an interdigital region defined by a portion of the fingers of the electrodes that interdigitate with each other. A dielectric layer is disposed over the interdigital transducer electrode outside the interdigital region and configured to reduce a loss of the surface acoustic wave device.

Abstract: An acoustic resonator device includes a conductor pattern formed on a surface of a piezoelectric plate. The conductor pattern includes a first busbar, a second busbar, and n interleaved parallel fingers of an interdigital transducer (IDT), where n is a positive integer. The fingers extend alternately from the first and second busbars. A first finger and an n'th finger are disposed at opposing ends of the IDT. The conductor pattern also includes a first reflector element proximate and parallel to the first finger and a second reflector element proximate and parallel to the n'th finger. When an RF signal is applied between the first and second busbars, the first reflector element is at substantially the same potential as the first finger and the second reflector element is at substantially the same potential as the n'th finger.

Abstract: Aspects of the disclosure relate to an electroacoustic device that includes a piezoelectric material and an electrode structure. The electrode structure includes a first busbar and a second busbar. The electrode structure further includes a first conductive structure connected to the first busbar and a second conductive structure connected to the second busbar. The first conductive structure and the second conductive structure is disposed between the first busbar and the second busbar. The first conductive structure and the second conductive structure each include a plurality of conductive segments separated from each other and extending towards one of the first busbar or the second busbar. The electrode structure further includes electrode fingers arranged in an interdigitated manner and each connected to either the first conductive structure or the second conductive structure. The electrode fingers have a pitch that is different than a pitch of the plurality of conductive segments.

Abstract: An acoustic resonator device includes a diaphragm a diaphragm comprising a portion of a piezoelectric plate spanning a cavity. A conductor pattern on a surface of the piezoelectric plate includes an interdigital transducer (IDT) with a first busbar, a second busbar, and a plurality of interleaved IDT fingers extending alternately from the first and second busbars. Overlapping portions of the plurality of interleaved fingers are on the diaphragm. The conductor pattern also includes a first reflector element on the diaphragm proximate and parallel to a first IDT finger, and a second reflector element on the diaphragm proximate and parallel to a last IDT finger. A center-to-center spacing of the first reflector element and the first IDT finger and the second reflector element and the last IDT finger is greater than an average center-to-center spacing between all adjacent pairs of IDT fingers.

Abstract: This invention focuses on minimizing the hot spots on a filter chip by creating thermal radiators using the mechano-acoustic structures and connection circuitry. A gradual increase of metal to wafer relation is made to provide better heat dissipation and heat sinking. Preferably the shunt lines of the ladder type arrangement of SAW resonators (RS1, RS2, RS3) comprise a broadened section (BBCN).

Abstract: A polarization tracker and use thereof are provided. The polarization tracker includes a waveguide housing, and a signal input end, a first directional coupler connected to the signal input end, a first reflective phase shifter and a second reflective phase shifter that are coupled to the first directional coupler, a second directional coupler, and a signal output end connected to the second directional coupler disposed in the waveguide housing.

Abstract: Acoustic filters are disclosed. An acoustic filter device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces and a thickness ts, the back surface attached to the surface of the substrate except for portions of the piezoelectric plate forming a plurality of diaphragms that span respective cavities in the substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern comprising a plurality of interdigital transducers (IDTs) of a plurality of acoustic resonators, interleaved fingers of each IDT of the plurality of IDTs disposed on a respective diaphragm of the plurality of diaphragms. The interleaved fingers of all of the plurality of IDTs are substantially aluminum with a common thickness tm, where 0.12 ts?tm?0.32 ts.