Abstract: Acoustic resonators and filter devices, and methods for making acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern formed is formed on the front surface of the piezoelectric plate, including an interdigital transducer (IDT) with interleaved fingers of the IDT on the diaphragm. An insulating layer is formed between the piezoelectric plate and portions of the conductor pattern other than the interleaved fingers.

Abstract: Devices and methods related to film bulk acoustic resonators. In some embodiments, a film bulk acoustic resonator can be manufactured by a method that includes forming a first electrode having a first lateral shape and providing a piezoelectric layer on the first electrode. The method can further include forming a second electrode having a second lateral shape on the piezoelectric layer such that the piezoelectric layer is between the first and second electrodes. The forming of the first electrode and the forming of the second electrode can include selecting and arranging the first and second lateral shapes to provide a resonator shape defined by an outline of an overlap of the first and second electrodes, such that the resonator shape includes N curved sections joined by N vertices of an N-sided polygon, and such that the resonator shape has no axis of symmetry.

Abstract: Surface acoustic wave devices and related methods. In some embodiments, a surface acoustic wave device for providing resonance of a surface acoustic wave having a wavelength ? can include a quartz substrate and a piezoelectric plate formed from LiTaO3 or LiNbO3 disposed over the quartz substrate. The piezoelectric plate can have a thickness greater than 2?. The surface acoustic wave device can further include an interdigital transducer electrode formed over the piezoelectric plate. The interdigital transducer electrode can have a mass density ? in a range 1.50 g/cm3<??6.00 g/cm3, 6.00 g/cm3<??12.0 g/cm3, or 12.0 g/cm3<??23.0 g/cm3, and a thickness greater than 0.148?, greater than 0.079?, or greater than 0.036?, respectively.

Abstract: Acoustic resonators are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate. The IDT includes: a first busbar and a second busbar disposed on respective portions of the piezoelectric plate other than the diaphragm; a first set of elongate fingers extending from the first bus bar onto the diaphragm; and a second set of elongate fingers extending from the second bus bar onto the diaphragm, the second set of elongate fingers interleaved with the first set of elongate fingers.

Abstract: An RF diplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The diplexer can include a pair of filter circuits, each with a plurality of series resonator devices and shunt resonator devices. In the ladder topology, the series resonator devices are connected in series while shunt resonator devices are coupled in parallel to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a plurality of series resonator devices, and a pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. A multiplexing device or inductor device can be configured to select between the signals coming through the first and second filter circuits.

Abstract: An acoustic wave filter device is disclosed. The device includes an acoustic wave filter element, and a first resonator and a second resonator coupled to the acoustic wave filter element. The acoustic wave filter element includes interdigited input electrodes and output electrodes located on a top surface of a piezoelectric layer. Each of the first and the second resonators includes a top electrode on the top surface, and a bottom electrode on the bottom surface of the piezoelectric layer. At least one of each of the first and the second resonators' electrodes is electrically connected to the acoustic wave filter element. The first resonator has a first notch in resonator impedance at a first frequency. The second resonator includes a first mass loading layer on the second resonator electrode such that the second resonator has a second notch in resonator impedance at a second frequency different from the first frequency.

Abstract: The present invention includes a method of creating electrical air gap low loss low cost RF mechanically and thermally stabilized interdigitated resonate filter in photo definable glass ceramic substrate. Where a ground plane may be used to adjacent to or below the RF filter in order to prevent parasitic electronic signals, RF signals, differential voltage build up and floating grounds from disrupting and degrading the performance of isolated electronic devices by the fabrication of electrical isolation and ground plane structures on a photo-definable glass substrate.

Abstract: A bonded body includes a supporting substrate; a piezoelectric material substrate; a first bonding layer provided on the supporting substrate and having a composition of Si(1-x)Ox (0.008?x?0.408); a second bonding layer provided on the piezoelectric material substrate and having a composition of Si(1-y)Oy (0.008?y?0.408); and an amorphous layer provided between the first bonding layer and second bonding layer. The oxygen ratio of the amorphous layer is higher than the oxygen ratio of the first bonding layer and oxygen ratio of the second bonding layer.

Abstract: Acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A conductor pattern formed is formed on the front surface of the piezoelectric plate, including an interdigital transducer (IDT) with interleaved fingers of the IDT on the diaphragm. The substrate and the piezoelectric plate are the same material.

Abstract: In a filter device, a transversal elastic wave filter, which defines a delay element, is connected in parallel with a band pass filter. The transversal elastic wave filter has the same amplitude characteristic as and the opposite phase to the band pass filter at a desired frequency inside an attenuation range of the band pass filter. When a wavelength determined by an electrode finger period of IDTs and is denoted by ?, the distance between the first IDT and the second IDT of the elastic wave filter is about 12? or less.

Abstract: An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer (IDT) formed on the front surface of the plate has interleaved fingers disposed on the diaphragm. The piezoelectric plate and the BOX layer are removed from a least a portion of the surface area of the device to provide lower thermal resistance between the IDT and the substrate.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode on the substrate, a cover over the substrate and IDT electrode, and hollow spaces between the IDT electrode and the cover. The hollow spaces are defined by partition supports between the substrate and the cover. The partition supports include a first and second partition supports extending in a first direction without contacting each other. The first and second partition supports each include first and second ends along the first direction. The first and second direction perpendicular to the first direction. The first end of the first partition support is closer to an outer periphery of the substrate than is the second end, and the first end of the second partition support is farther away from the outer periphery than is the second end.

Abstract: A branch-line coupler, adapted to radio frequency circuits, includes an input port, a first output port, a second output port, an isolated port, a first transmission line, a second transmission line, a first bent branch line, and a second bent branch line. The first transmission line is electrically connected between the input port and the first output port, and carries two open branches. The second transmission line is electrically connected between the isolated port and the second output port, and carries two open branches. The first bent branch line is electrically connected between the input port and the isolated port. The second bent branch line is electrically connected between the first output port and the second output port. The open branches of the first transmission line and the second transmission line resemble the bone structure of a fish skeleton.

Abstract: Acoustic wave filter devices are disclosed. A device includes a layer providing or on a topmost layer of an acoustic reflector. The intermediary layer has a first region and a second region. The first region has a first layer thickness and the second region has a second layer thickness different from the first layer thickness. The device includes a first multilayer stack on the first region and a second multilayer stack on the second region of the intermediary layer. Each of the first and the second stacks includes a piezoelectric layer on a counter electrode that is located on the respective region, an input and an output electrode. Application of a radio frequency voltage between the input electrode and the counter electrode layer of the first stack creates acoustic resonance modes in the piezoelectric layer between the input and output electrodes of the first and the second stack.

Abstract: An acoustic wave filter includes first and second series-arm resonators, each including an IDT electrode including electrode fingers and a busbar electrode connecting first ends of the electrode fingers to each other. A direction in which second ends of the electrode fingers are aligned with each other crosses a propagation direction of an acoustic wave. The electrode fingers of the IDT electrodes of the first and second series-arm resonators each include an electrode-finger central portion and a wide portion located at the second end and being wider than the electrode-finger central portion. The length of the wide portion of each of the electrode fingers in the first series-arm resonator is greater than the length of the wide portion of each of the electrode fingers in the second series-arm resonator.

Abstract: An acoustic wave device includes N band pass filters with first ends connected to define a common connection and having different pass bands. At least one of the band pass filters includes acoustic wave resonators including a lithium tantalate film having Euler angles (?LT=0°±5°, ?LT, ?LT=0°±15°), a silicon support substrate, a silicon oxide film between the lithium tantalate film and the silicon support substrate, an IDT electrode, and a protective film. In at least one acoustic wave resonator, a frequency fh1_t(n) satisfies Formula (3) or Formula (4) for all m where m>n: fh1_t(n)>fu(m)??Formula (3); and fh1_t(n)<fl(m)??Formula (4). In Formulas (3) and (4), fu(m) and fl(m) represent the frequencies of the high-frequency end and the low-frequency end of the pass band in the m band pass filters.

Abstract: There is disclosed acoustic resonators and filter devices. An acoustic resonator device includes a piezoelectric plate, and an interdigital transducer (IDT) formed on a front surface of the piezoelectric plate. The IDT includes interleaved fingers. At least one of the interleaved fingers includes a first layer adjacent the piezoelectric plate and a second layer over the first layer, wherein a width of the first layer is constant, and wherein a width of the second layer varies along a length of the at least one interleaved finger.

Abstract: Methods of manufacturing an acoustic wave device are disclosed. An anti-reflection layer can be formed over a conductive layer that is over a piezoelectric layer. The conductive layer can include aluminum, for example. The anti-reflection layer can remain distinct from the conductive layer after a heating process. A photolithography process can pattern an interdigital transducer of the acoustic wave device from one or more interdigital transducer electrode layers that include the conductive layer. The anti-reflection layer can reduce reflection from the conductive layer during the photolithography process.

Abstract: The present application provides a trisection power divider with isolation and a microwave transmission system, where the divider includes a first hybrid ring coupler with a distribution ratio of 1:2 and a second hybrid ring coupler with a distribution ratio of 1:1; a first port of the first hybrid ring coupler is a signal input port; a second port of the first hybrid ring coupler is connected with a first port of the second hybrid ring coupler; a second port of the second hybrid ring coupler, a third port of the second hybrid ring coupler and a third port of the first hybrid ring coupler are three signal output ports of the divider; and the second port of the first hybrid ring coupler is a port with high power.

Abstract: An elastic wave device includes a support substrate made of silicon, a piezoelectric film disposed directly or indirectly on the support substrate, and an interdigital transducer electrode disposed on one surface of the piezoelectric film. A higher-order mode acoustic velocity of propagation through the piezoelectric film is equal or substantially equal to an acoustic velocity Vsi=(V1)1/2 of propagation through silicon or higher than the acoustic velocity Vsi, where Vsi is specified by V1 among solutions V1, V2, and V3 with respect to x derived from Ax3+Bx2+Cx+D=0.