Abstract: An acoustic wave device includes a piezoelectric substrate including a crystal axis and an IDT electrode. When an acoustic wave propagation direction is a first direction and a direction perpendicular to the first direction is a second direction, the crystal axis of the piezoelectric substrate is inclined toward the second direction with respect to the thickness direction. The IDT electrode includes first and second electrode fingers interdigitated with each other. The portion where the first and second electrode fingers overlap in the first direction is a crossing region. The crossing region includes a center region that is centrally located in the second direction and first and second low-acoustic-velocity regions that are located on both sides of the center region in the second direction and in which the acoustic velocity is lower than the acoustic velocity in the center region. The first and second low-acoustic-velocity regions are asymmetrical.

Abstract: When a thick frequency adjustment metal film of a tuning fork-type vibration piece is irradiated with a beam on a wafer for frequency coarse adjustment, projections are possibly formed on a roughened end of the frequency adjustment metal film. Such projections are pressurized and pushed down not to chip off under any impact, so that the risk of frequency fluctuations is suppressed.

Abstract: Acoustic resonator devices, filter devices, and methods of fabrication are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. At least a portion of an edge of the diaphragm is at an oblique angle to the fingers. The IDT includes a busbar disposed parallel to the edge of the diaphragm such that the interleaved fingers extend at the oblique angle from the busbar.

Abstract: A single-crystal bulk acoustic wave resonators with better performance and better manufacturability and a process for fabricating the same are described. A low-acoustic-loss layer of one or more single-crystal and/or poly-crystal piezoelectric materials is epitaxially grown and/or physically deposited on a surrogate substrate, followed with the formation of a bottom electrode and then a support structure on a first side of the piezoelectric layer. The surrogate substrate is subsequently removed to expose a second side of the piezoelectric layer that is opposite to the first side. A top electrode is then formed on the second side of the piezoelectric layer, followed by further processes to complete the BAW resonator and filter fabrication using standard wafer processing steps. In some embodiments, the support structure has a cavity or an acoustic mirror adjacent the first electrode layer to minimize leakage of acoustic wave energy.

Abstract: An electronic component includes a package substrate extending in a longitudinal direction, and chip components disposed along the longitudinal direction of the package substrate and each connected to the package substrate by a bump. A height of a bump connecting at least one chip component disposed at an end portion in the longitudinal direction among the chip components and the package substrate is greater than a height of a bump connecting at least one chip component disposed inward relative to the end portion in the longitudinal direction among the chip components and the package substrate.

Abstract: Methods of making acoustic resonators and filter devices. A method includes attaching a piezoelectric plate to a substrate, and forming a conductor pattern including an interdigital transducer (IDT) on a portion of the piezoelectric plate that forms a diaphragm spanning a cavity such that interleaved fingers of the IDT are on the diaphragm. The substrate and the piezoelectric plate are the same material.

Abstract: Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate supported by the substrate. A portion of the piezoelectric plate suspended across a cavity in the substrate forms a diaphragm. A decoupling dielectric layer is on a front surface of the diaphragm. An interdigital transducer (IDT) has interleaved fingers on the decoupling dielectric layer over the diaphragm. The IDT and piezoelectric plate are configured such that a radio frequency signal applied to the IDT excites shear acoustic waves in the diaphragm.

Abstract: An orthomode junction for separating and/or combining orthogonally-polarized radiofrequency wave signals, comprises a body which has a main cavity forming a main waveguide, which has a blind end, and auxiliary cavities forming auxiliary waveguides, which communicate laterally with the main cavity in the vicinity of the blind end thereof, and a deflection insert situated at the blind end of the main cavity and facing the auxiliary cavities, the deflection insert having different shapes on the side of the auxiliary cavities respectively.

Abstract: Aspects of this disclosure relate to an acoustic wave device that includes a multi-layer interdigital transducer electrode. The acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer. The interdigital transducer electrode includes a first interdigital transducer electrode layer positioned between a second interdigital transducer electrode layer and the piezoelectric layer. The second interdigital transducer electrode layer can include aluminum and having a thickness of at least 200 nanometers. The acoustic wave device can include a temperature compensation layer arranged such that the interdigital transducer electrode is positioned between the piezoelectric layer and at least a portion of the temperature compensation layer. Related filters, modules, wireless communication devices, and methods are disclosed.

Abstract: Aspects of this disclosure relate to an acoustic wave resonator having at least two resonant frequencies. An acoustic wave filter can include series acoustic wave resonators and shunt acoustic wave resonators together arranged to filter a radio frequency signal. A first shunt resonator of the shunt acoustic wave resonators can include an interdigital transducer electrode and have at least a first resonant frequency and a second resonant frequency. Related acoustic wave resonators, multiplexers, wireless devices, and methods are disclosed.

Abstract: An electronic device includes an insulation material layer provided on a first main surface of a piezoelectric substrate and surrounding a functional element, and a protective layer provided on the insulation material layer. The piezoelectric substrate and the insulation material layer define a hollow portion accommodating the functional element. The protective layer includes a first portion above the hollow portion, a second portion adjacent to the first portion at one end of the second portion, and a third portion adjacent to the second portion at another end of the second portion. A distance between the first main surface and a surface of the protective layer in the thickness direction is greatest at a location where the second portion is adjacent to or in a vicinity of the first portion, and the distance is shortest at a location where the second portion is adjacent to or in a vicinity of the third portion.

Abstract: The present disclosure relates to a ladder-type surface acoustic wave (SAW) device, which includes a piezoelectric layer, two reflective structures, at least one series interdigital transducer (IDT) coupled between a first signal point and a second signal point, and at least one shunt IDT. The at least one shunt IDT is coupled at least between the first signal point and ground, or between the second signal point and ground. Herein, the two reflective structures, the at least one series IDT, and the at least one shunt IDT reside over the piezoelectric layer. The at least one series IDT and the at least one shunt IDT are arranged between the two reflective structures.

Abstract: The present disclosure relates to a ladder-type surface acoustic wave (SAW) device, which includes a piezoelectric layer, two reflective structures, at least one series interdigital transducer (IDT) coupled between a first signal point and a second signal point, and at least one shunt IDT. The at least one shunt IDT is coupled at least between the first signal point and ground, or between the second signal point and ground. Herein, the two reflective structures, the at least one series IDT, and the at least one shunt IDT reside over the piezoelectric layer. The at least one series IDT and the at least one shunt IDT are arranged between the two reflective structures.

Abstract: A microelectromechanical resonator device is provided having two-dimensional resonant rods. The resonator device has a piezoelectric layer formed with a plurality of alternating rods and trenches. A bottom electrode is in contact with a bottom surface of the piezoelectric layer. A top electrode metal grating of conductive strips is aligned in contact with corresponding rods of the piezoelectric layer.

Abstract: Acoustic wave devices and interdigital transducer (IDT) arrangements for surface acoustic wave (SAW) devices are disclosed. Representative SAW devices are described herein that provide sharp transitions between passband frequencies and frequencies that are outside of desired passbands. A SAW device may include several IDTs arranged between reflective structures on a piezoelectric material and one or more additional IDTs or electrode pairs that are configured to modify the influence of parasitic capacitance, or other internal device capacitance, thereby improving steepness on the upper side of a passband as well as improving rejection for frequencies outside of the passband. The one or more additional IDTs or electrode pairs may be configured as at least one of a capacitor, an IDT capacitor, an IDT with a floating electrode, or combinations thereof.

Abstract: A surface acoustic wave (SAW) filter package structure includes a dielectric substrate having a dielectric layer, a first patterned conductive layer, a second patterned conductive layer, and a conductive connection layer. The conductive connection layer is electrically connected between the first patterned conductive layer and the second patterned conductive layer, which are disposed at opposite sides of the dielectric layer. The second patterned conductive layer has a finger electrode portion. An active surface of a chip is faced toward the finger electrode portion. A polymer sealing frame is disposed between the chip and the dielectric substrate and surrounds the periphery of the chip to form a chamber together with the chip and the dielectric substrate. The mold sealing layer is disposed on the dielectric substrate and covers the chip and the polymer sealing frame. A manufacturing method of the SAW filter package structure is also disclosed.

Abstract: An acoustic filter circuit for noise suppression outside resonance frequency is provided. The acoustic filter circuit includes a first filter branch and a second filter branch. The first filter branch and the second filter branch are both configured to resonate at a resonance frequency to pass a radio frequency (RF) signal, but in opposite phases. The acoustic filter circuit also includes a shunt circuit coupled between the first filter branch and the second filter branch. As discussed in various embodiments in the detailed description, the shunt circuit can be configured to protect the RF signal located inside the resonance frequency and suppress noises located outside the resonance frequency. As such, the acoustic filter circuit can provide improved noise rejection and reduce insertion loss.

Abstract: An acoustic resonator device includes a substrate and a piezoelectric plate. A first portion of the piezoelectric plate is on the substrate. A second portion of the piezoelectric forms a diaphragm suspended over a cavity in the substrate. An interdigital transducer (IDT) is on a surface of the piezoelectric plate, the IDT including first and second busbars on the first portion and interleaved IDT fingers on the diaphragm. A plurality of tethers support the diaphragm over the cavity, each tether providing an electrical connection between a corresponding one of the interleaved IDT fingers and one of the first and second busbars.

Abstract: A BAW resonator (BAWR) with improved power durability and improved heat resistance is provided. The resonator comprises a layer stack with a piezoelectric material (PM) between a bottom electrode (ELI) and a top electrode (EL2) and a shunt path parallel (PCPP) to the layer stack provided to enable an RF signal to bypass the layer stack, e.g. to ground (GND). The shunt path (PCPP) has a temperature dependent conductance with a negative temperature coefficient, NTC, of resistance. When the temperature of the device rises due to high power operation, currents that would otherwise permanently damage the device are shunted to ground or another dedicated terminal by the temperature dependent shunt path. Upon cooling down normal operation is resumed.

Abstract: An acoustic wave device includes a (111)-oriented silicon substrate, a silicon nitride layer, a silicon oxide layer, a lithium tantalate layer, and an IDT electrode on the lithium tantalate layer. When the wavelength determined by the electrode finger pitch of the IDT electrode is ?, the thickness of the silicon nitride layer, SiN [?], the thickness of the silicon oxide layer, SiO2 [?], the thickness of the lithium tantalate layer, LT [?], and one of the Euler angles of the lithium tantalate layer, LT? [deg.], are thicknesses and an angle in ranges in which the phase of a first higher-order mode is about ?20° or less.