Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, or 2, R1, R2 are an alkyl group, an alkenyl group, an aryl group or a silyl group, m is 1, 2, or 3, R3, R4, and R5 are an alkyl group, an alkenyl group, an aryl group, an alkoxy group, or an aryloxy group, and p is 1, 2 or 3.

Abstract: An embodiment of a method includes retaining a first workpiece and a second workpiece selectively on a workpiece fixture disposed within a deposition chamber. The workpiece fixture includes tooling including a first workpiece holder, a second workpiece holder, and a first hollow wall. The first workpiece is separated from the second workpiece using the first hollow wall. Energy is selectively applied and directed within the deposition chamber, from an energy source toward a first crucible, the first crucible including a plurality of walls defining an upper recess contiguous with, and disposed directly above a first lower recess, at least the upper recess open to an interior of the deposition chamber. During the step of selectively applying and directing energy, a gas valve is controlled to maintain a partial vacuum in the deposition chamber of greater than 2 Pa to control a size and overlap of at least one coating zone formed around each of the at least one workpiece.

Abstract: A vacuum processing system for a flexible substrate is provided. The processing system includes a first chamber adapted for housing one of a supply roll for providing the flexible substrate and a take-up roll for storing the flexible substrate; a second chamber adapted for housing one of a supply roll for providing the flexible substrate and a take-up roll for storing the flexible substrate; a maintenance zone between the first chamber and the second chamber; and a first process chamber for depositing material on the flexible substrate, wherein the second chamber is provided between the maintenance zone and the first process chamber. The maintenance zone allows for maintenance access to at least one of the first chamber and the second chamber.

Abstract: A method for additively manufacturing a ceramic containing article includes selecting a ceramic precursor and a curable resin, determining a ratio of the ceramic precursor to the curable resin required to achieve a desired ceramic microstructure, mixing the ceramic precursor and the curable resin according to the determined ratio, and iteratively building an article by sequentially applying a layer of the mixture and curing the layer using an additive manufacturing machine.

Abstract: An apparatus for depositing a coating on a part comprises: a chamber; a source of the coating material, positioned to communicate the coating material to the part in the chamber; a plurality of thermal hoods; and means for moving a hood of the plurality of thermal hoods from an operative position and replacing the hood with another hood of the plurality of hoods.

Abstract: An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.

Abstract: A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

Abstract: A process for melting/sintering powder particles for layer-by-layer production of three-dimensional objects is performed by a)applying a layer of a powder material solidifiable under the action of electromagnetic radiation, b) heating the powder material to not more than 10 K below the melting point according to DIN 53765 by a radiation from a heat-radiating element whose maximum radiation intensity is at a wavelength of 5000 nm or at longer wavelengths, c) selective melting/sintering of at least a region of the powder material which corresponds to the cross section of the three-dimensional object, d)repeating steps a) to c) until the three-dimensional object is obtained.

Abstract: A substrate processing apparatus includes a chamber, a susceptor provided in the chamber, a shower plate having a plate part provided with a plurality of through holes and formed of a conductor, a ring-shaped part connected to an outer edge of the plate part, surrounding the plate part and formed of a conductor and a lead wire embedded in the ring-shaped part and surrounding the plate part and the susceptor in plan view, the shower plate being provided so as to face the susceptor in the chamber, and a DC power supply that supplies a direct current to the lead wire.

Abstract: A method for thermochemically treating a part while masking a portion and corresponding mask are provided. The method includes the steps of providing a mask comprising a body with a seat, at least a deformable sealing washer located in the seat, and a tightening bushing, the body having a cavity, placing a first portion of the part in the cavity, a second portion of the part being located in a passage in the sealing washer, and a third portion of the part being located outside the mask, moving the tightening bushing to its tightened position so that the sealing washer is deformed and applied against the second portion of the part, and applying a thermochemical treatment to the third portion of the part.

Abstract: A substantially biodegradable and water soluble tampon applicator comprising: a plunger and a barrel, said plunger being of a predetermined length, and having a first end and a second end, said second end being a predetermined distance from said first end, said plunger being substantially cylindrical in shape and having a first diameter at said first end and a second diameter at said second end, wherein said first diameter tapers downwards to said second diameter, proximate said first end, said plunger further comprises a first mating portion, said barrel having a first end and a second end, said second end being a predetermined distance from said first end, said barrel being substantially cylindrical in shape and having a diameter greater than the first diameter of said plunger, proximate said first end of said barrel, there is provided a second mating portion to matingly engage said first mating portion of said plunger to maintain said plunger in relation to said barrel in a first position, proximate said f

Abstract: Embodiments described herein generally related to a substrate processing apparatus, and more specifically to an improved showerhead assembly for a substrate processing apparatus. The showerhead assembly includes a gas distribution plate and one or more temperature detection assemblies. The gas distribution plate includes a body having a top surface and a bottom surface. The one or more temperature detection assemblies are interfaced with the top surface of the gas distribution plate such that a thermal bond is formed between the gas distribution plate and each of the one or more temperature detection assemblies. Each temperature detection assembly includes a protruded feature and a temperature probe. The protruded feature is interfaced with the top surface of the gas distribution plate such that an axial load is placed on the gas distribution plate along an axis of the protruded feature. The temperature probe is positioned in a body of the protruded feature.

Abstract: A 3D printing device and a printing correction method are provided. The 3D printing device includes a printing nozzle, a printing platform and a controller. The printing nozzle is controlled to move on the movement plane. The printing platform includes a first tilt sensor to sense a tilting state of the printing platform. The controller is coupled to the first tilt sensor. The printing correction method adapted to the 3D printing device includes following steps: sensing the tilting state of the printing platform; controlling the printing nozzle to be depressed in a first position on the printing platform to change the tilting state of the printing platform; and, correcting the relative position of the print platform with the movement plane by the first position and the changes of tilting state of the printing platform sensed by the tilt sensor.

Abstract: Described herein is a technique capable of reducing the time necessary for stabilizing the inner temperature of the processing furnace. A substrate processing apparatus may include: a wafer retainer configured to support a plurality of wafers; an upright cylindrical process vessel; a seal cap configured to cover an opening at a lower end of the process vessel; a first heater configured to heat an inside of the process vessel from a lateral side thereof; an insulating unit disposed between the seal cap and the wafer retainer; and a second heater facing at least one of the plurality of wafers and configured to heat the at least one of the plurality of wafers, the second heater including: a pillar penetrating centers of the seal cap and the insulating unit; an annular member connected to and concentric with the pillar; a pair of connecting parts connecting end portions of the annular member to the pillar; and a heating element disposed inside the annular member.

Abstract: A film forming apparatus comprises a film forming vessel comprising a first mold and a second mold that is arranged to be opposed to the first mold. The first mold is configured to include a first recessed portion and a first planar portion arranged around the first recessed portion and an exhaust port in a bottom portion of the first recessed portion. The film forming apparatus also comprises a seal member placed between the first planar portion of the first mold and the second mold. The seal member is configured to keep inside of the film forming vessel airtight; and an exhaust device connected with the exhaust port. The work is placed away from the first planar portion such that a film formation target part of the work faces an internal space of the first recessed portion when the film forming vessel is closed.

Abstract: A coating device including a housing case capable of housing therein a plurality of processing targets and configured to coat the plurality of processing targets with a gaseous component by taking gas into the housing case. A rotation body is configured to rotate the housing case. The housing case includes a through-hole for taking gas inside and a stirring plate protruding from an internal wall of the housing case is used to stir the plurality of processing targets.

Abstract: A method for processing a substrate in a substrate processing system includes flowing reactant gases into a process chamber including a substrate and supplying a first power level sufficient to promote rearrangement of molecules adsorbed from the reactant gases onto a surface of the substrate. The first power level is supplied in a first predetermined period where the reactant gases are flowing into the process chamber and a second power level is not supplied to the process chamber. The method further includes waiting a second predetermined period subsequent to flowing the reactant gases and supplying the first power level and prior to supplying the second power level to the process chamber and, after the second predetermined period, performing plasma-enhanced, pulsed chemical vapor deposition of film on the substrate by supplying one or more precursors while supplying the second power level to the process chamber for a third predetermined period.

Abstract: Disclosed is a deposition apparatus for an organic light-emitting diode, which is capable of preventing a large piece of glass from sagging due to gravity. The deposition apparatus allows the glass to be adhered to the lower surface of a planar electrostatic chuck from the center portion toward the edge portion thereof in the state in which it is upwardly convexly bent, thereby preventing deformation of a mask caused by the amount of sag of the glass. In addition, the deposition apparatus enables rapid alignment of the glass and the mask because the glass and the mask are adhered to each other via measurement of respective alignment marks provided thereon after the glass is located as close as possible to the mask without coming into contact with the mask.

Abstract: Embodiments of the present disclosure are directed to a gimbal assembly, that includes a gimbal plate having a central opening, a pivot screw disposed within a pivot mount formed in the gimbal plate, wherein the pivot screw includes a spherical pivot head about which the gimbal plate pivots, one or more motors coupled to the gimbal plate configured to provide in-situ gimbal plate motion about the spherical pivot head, and a plurality of leveling indicators configured that determine deflection of gimbal plate.

Abstract: Disclosed is a method of forming a nitride film on a substrate to be processed (“processing target substrate”) having a carbon-containing film that contains a carbon atom. The method includes placing the processing target substrate within a processing container of a film forming apparatus, and forming a first nitride film on the carbon-containing film by plasma of a first reaction gas including a gas of nitride species having no hydrogen atom, and an inert gas.