Abstract: A deposition apparatus for depositing a material on a substrate is provided. The deposition apparatus has a processing chamber defining a processing space in which the substrate is arranged, an ultraviolet radiation assembly configured to emit ultraviolet radiation and a microwave radiation assembly configured to emit microwave radiation into an excitation space that can be the same as the processing space, and a gas feed assembly configured to feed a precursor gas into the processing space and a reactive gas into the excitation space. The ultraviolet radiation assembly and the microwave radiation assembly are operated in combination to excite the reactive gas in the excitation space. The material is deposited on the substrate from the reaction of the excited reactive gas and the precursor gas. A method for using the deposition apparatus to deposit a material on a substrate is provided.

Abstract: In a method provided herein for forming a chalcogenide film on a substrate, an elemental solid is exposed to a hydrogen halide gas in a heated reaction environment at a temperature at which the hydrogen halide gas promotes the elemental solid to evolve into an elemental halide-based gas. The elemental halide-based gas is then exposed to a chalcogen gas provided in the heated reaction environment, at a temperature at which the elemental halide-based gas is reactive with the chalcogen gas to produce a solid chalcogenide reaction product. A substrate is provided in the heated reaction environment for deposition thereon of a solid film of the solid chalcogenide reaction product that results from exposure of the elemental halide-based gas to the chalcogen gas in the heated reaction environment.

Abstract: An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.

Abstract: An evaporation apparatus (100) for depositing material on a flexible substrate (160) supported by a processing drum (170) is provided. The evaporation apparatus includes: a first set (110) of evaporation crucibles aligned in a first line (120) along a first direction for generating a cloud (151) of evaporated material to be deposited on the flexible substrate (160); and a gas supply pipe (130) extending in the first direction and being arranged between an evaporation crucible of the first set (110) of evaporation crucibles and the processing drum (170), wherein the gas supply pipe (130) includes a plurality of outlets (133) for providing a gas supply directed into the cloud of evaporated material, and wherein a position of the plurality of outlets is adjustable for changing a position of the gas supply directed into the cloud of evaporated material.

Abstract: A process of atomic layer deposition for the deposition of silicon oxide on a substrate, performed at room temperature, involving at least three precursors, being silicon tetrachloride, water and one Lewis base agent, being in various instances ammonia. The process comprises the steps of exposing on the substrate during an exposure time (a) the one Lewis base agent, (b) the silicon tetrachloride, and (c) the water. The process is remarkable in that at least one step of purge with nitrogen gas is performed after each of the steps (a), (b) and (c) during a purge time. Additionally, a film of silicon oxide which is remarkable in that it comprises a low level of chlorine contaminant and a significant degree of porosity with pores, the pores being in various instances micropores, mesopores or nanopores.

Abstract: There is provided a film-forming apparatus and a film-forming method. The film-forming apparatus, in a first period, sets the second heater to a temperature T1 at which no film is formed on a substrate disposed on the mounting stand without supplying a precursor gas into the process container, in a second period, sets the second heater to a temperature T2 at which no film is formed on the substrate and supplies a precursor gas into the process container from the precursor gas supply pipe, in a third period, sets the second heater to a film-forming temperature T3, and in the first to third periods, sets the first heater to a temperature T4 at which no film is formed on a periphery of a gas supply port of the precursor gas supply pipe.

Abstract: A film forming apparatus is provided. The film forming apparatus includes an inner tube configured to accommodate a workpiece and having a first space defined by a side wall of the inner tube and an upper wall of the inner tube that is connected to the side wall, an exhaust pipe fluidly connected to the first space, at least one top hole defined in the upper wall of the inner tube, at least one side hole defined in the side wall of the inner tube, an outer tube surrounding the inner tube, and a reaction gas supply pipe fluidly connected to a second space defined by and formed between the inner tube and the outer tube, wherein the reaction gas supply pipe is positioned higher vertically than the exhaust pipe.

Abstract: A method is disclosed for producing thin-walled small plastic parts having an average wall thickness of less than about 1.5 mm, wherein the small plastic parts are produced in a plastic injection-molding method from polyethylene furanoate (PEF) having a viscosity of, for example, 0.3 dl/g to 0.7 dl/g, for example, preferably less than e.g., 0.6 dl/g, measured according to a measurement method as per ASTM D4603, which polyethylene furanoate has an exemplary water content of less than 100 ppm in the plastic injection process.

Abstract: A method or apparatus for creating a three-dimensional tissue construct of a desired shape for repair or replacement of a portion of an organism. The method may comprise injecting at least one biomaterial in a three-dimensional pattern into a first material such that the at least one biomaterial is held in the desired shape of the tissue construct by the first material. The apparatus may comprise an injector configured to inject at least one biomaterial in a three-dimensional pattern into a first material such that the at least one biomaterial is held in the desired shape of the tissue construct by the first material. The first material may comprise a yield stress material, which may be a material exhibiting Herschel-Bulkley behavior. The tissue construct may have a smallest feature size of ten micrometers or less.

Abstract: An additive manufacturing apparatus in which a streak in a manufacturing direction is difficult to be made on the surface of a product manufactured object in a boundary region of projection regions of exposure images is provided. In this apparatus, a vessel holds a photosetting liquid resin material, a first projector makes a first exposure image incident from an incident surface and projects it into the resin material, a second projector makes a second exposure image, continuous with the first exposure image, incident from the incident surface and projects it into the resin material, and a controlling unit adjusts on a projection surface a boundary region between a first projection image obtained by projecting the first exposure image by the first projector and a second projection image obtained by projecting the second exposure image by the second projector.

Abstract: Electrodes for and methods of electrical discharge machining are provided. For example, a method for forming a feature in a ceramic matrix composite (CMC) component comprises repeatedly advancing an electrode into and retracting the electrode from the CMC component until a desired depth is reached, where the electrode has a head end, a tip end, and a shaft extending from the head end to the tip end. The shaft has a first side and a second side each recessed inward such that the head end and the tip end are wider than the shaft. A method for forming a feature in a CMC component also may include feeding a dielectric fluid into the feature utilizing the recessed sides. In some embodiments, electrodes may include a shaft extending from a head end to a tip end and a central plane, where the shaft is recessed widthwise toward the central plane.

Abstract: There is provision of a method of cleaning an exhaust pipe of a film forming apparatus for removing a component adhering to the exhaust pipe which is generated from a source gas for forming film supplied from a gas supply part to a processing chamber of the film forming apparatus. The method includes a step of supplying a cleaning gas directly, from a cleaning gas supply part disposed near a joint between the processing chamber and the exhaust pipe, to the exhaust pipe without passing through the processing chamber, in order to remove the component by causing the component to vaporize upon reacting with the cleaning gas. The cleaning gas to be supplied is capable of causing the component adhering to the exhaust pipe to change into an evaporable substance by chemical reaction in an atmosphere inside the exhaust pipe.

Abstract: This disclosure relates to the field of display fabrication technologies, and discloses a fine mask support frame, a fine mask, and a method for fabricating the same. The fine mask support frame includes: a plurality of bezels surrounding a mask area, wherein adjustment openings are arranged on at least one pair of bezels arranged opposite to each other, and at least one adjustment piece is arranged on each of the adjustment openings, wherein the adjustment piece is configured to adjust a shape of a corresponding adjustment opening to thereby adjust deformation of the mask area.

Abstract: A drawing apparatus includes a support for supporting a part of a grown form and a drive unit for causing a relative movement of the support and the grown form to draw an extended form from the grown form. The support performs a double support in which, after a predetermined length of the extended form is drawn, at least one of a predetermined position of the extended form or a part of the grown form continuous with the extended form is again supported.

Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

Abstract: A raw material for forming a thin film that includes a compound represented by General Formula (1) below. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms; R2 to R5 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms; A represents an alkanediyl group having 1 to 4 carbon atoms; and M represents titanium, zirconium or hafnium. Provided that when M represents zirconium, A represents an alkanediyl group having 3 or 4 carbon atoms. When M represents titanium or hafnium, it is preferred that A represents an alkanediyl group having 2 or 3 carbon atoms. When M represents zirconium, it is preferred that A represent an alkanediyl group having 3 carbon atoms.

Abstract: A method for fabricating a colored 3D object is provided. The method includes: forming, based on layer-structure data of a target object, a layer-structure product by printing of a molding material; forming a layer-print product by printing color inks on the layer-structure product based on layer-color data; and repeatedly forming the layer-print product to provide a plurality of the layer-print products, and fabricating a colored 3D object from the plurality of the layer-print products, stacked one over another. The color inks are printed synchronously or following the formation of the layer-structure product. A system for fabricating a colored 3D object includes a processing terminal, a print head, and a drive controller. The method and system improve a dimensional accuracy and printing efficiency of the colored 3D object.

Abstract: A plasma chamber (11?) for coating a substrate with a polymer layer, the plasma chamber includes a first electrode set (14?) and a second electrode set (14?), the first and second electrode sets are arranged either side of a sample chamber for receiving a substrate, wherein the first and second electrode sets include plural electrode layers (141?, 142?) and wherein each electrode set includes plural radiofrequency electrode layers or plural ground electrode layers for coating polymer to each surface of a substrate.

Abstract: The present disclosure relates to a bioprinter spray head assembly, comprising a mounting block having a passage and a spray head mounted in the passage, wherein a first flow channel is provided in the mounting block, one end of the first flow channel is provided with a port communicating with the passage; the spray head comprises an equal diameter portion away from an outlet of the passage and a reduced diameter portion close to the outlet of the passage, wherein a second flow channel is formed between the reduced diameter portion and the passage, an opening is formed between the reduced diameter portion and the port to communicate the first flow channel and the second flow channel, and the equal diameter portion is configured to occlude the port. The adjustment of the circulation area of the spray head assembly may be achieved by changing the relative positions of the reduced diameter portion and the port, so that the adjustment is convenient and easy to carry out, and there is a favorable implementability.

Abstract: A coating system includes a coating chamber having a peripheral chamber wall, a top wall, and a bottom wall. The peripheral chamber wall defines a chamber center. A plasma source is positioned at the chamber center. The coating system also includes a sample holder that holds a plurality of substrates to be coated which is rotatable about the chamber center at a first distance from the chamber center. A first isolation shield is positioned about the chamber center at a second distance from the chamber center, the first isolation shield being negatively charged.