Abstract: A three-dimensional array of memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. The memory elements can be set to a low resistance state and reset to a high resistance state during standard operation by biasing appropriate voltages on the word lines and bit lines. Prior to standard operation, the memory elements undergo a forming operation, during which current through the bit lines is limited. A forming voltage is applied to the memory elements during forming with a polarity such that a higher voltage is applied to anodes and a lower voltage to cathodes.

Abstract: The demand for reducing the size and increasing the degree of integration of semiconductor memory devices has increased. In a semiconductor memory device, a smoothing capacitor which has to be provided therein for stabilizing a power supply voltage etc. is formed in an underlying layer of memory cells A and B to overlap the two memory cells A and B which are adjacent each other. Thus, an area occupied by the smoothing capacitor having a large capacity can be reduced to increase the degree of integration, and the smoothing capacitor having a large capacity can be provided in the semiconductor memory device.

Abstract: A NAND type multi-bit charge storage memory array comprises a first and a second memory strings each of which includes one or more charge storage memory cells and two select transistors. The charge storage memory cells are connected in series to form a memory cell string. The two select transistors are connected in series to both ends of the memory cell string, respectively. The NAND type multi-bit charge storage memory array further comprises a shared bit line and a first and a second bit lines. The shared bit line is connected with the first ends of the first and the second memory strings. The first and the second bit lines are connected to the second ends of the first and the second memory strings, respectively. The first select transistor and the second select transistor of each memory string are controlled by a first and a second select transistor control lines, respectively.

Abstract: One floating gate transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A floating gate is separated from the channel region by a first gate oxide. The floating gate includes oxide-conductor nanolaminate layers to trap charge in potential wells formed by different electron affinities of the oxide-conductor nanolaminate layers.

Abstract: A NAND architecture non-volatile memory voltage sensing data read/verify process and sense amplifier has been described that senses data in floating gate or floating node field effect transistor memory cells using a voltage sensing data read/verify process. The voltage sensing process utilized a reference NAND string and reference memory cell that is coupled to a reference bit line. A voltage is precharged onto a bit line to be read and an associated reference bit line. The bit line is then coupled to a NAND string and selected memory cell while the reference bit line is coupled to a reference NAND string and selected reference memory cell. The relative voltage level of the bit line and reference bit line are then set by the relative currents flowing through the coupled NAND string and reference NAND string, and the voltage differential read by a coupled voltage sense amplifier.

Abstract: A flash memory device includes a memory cell array having a first region and a second region that include memory cells arranged in a plurality of rows and columns; an address storage circuit adapted to store address information for defining the second region; a row decoder circuit adapted to select one of the first and second regions in response to an external address; a voltage generating circuit adapted to generate a read voltage to be provided to a row of the selected region by the row decoder circuit during a read operation; a detecting circuit adapted to detect whether the selected region is included in the second region on the basis of address information and external address information that are stored in the address storage circuit; and a control logic adapted to control the voltage generating circuit in response to an output of the detecting circuit during the read operation.

Abstract: A method and apparatus are described for the filtering of a common input string to generate various filtered comparand strings. The filtering of a common input string enables concurrent lookups in different tables to be performed on multiple filtered comparands by different CAM devices (or different blocks within a CAM device), to compare the data in the filtered comparand strings with data stored in its associative memory. By performing multiple lookups in parallel, rather than sequentially, packet throughput in a CAM may be significantly increased.

Abstract: An erase discharge circuit in a flash memory is coupled to an array source and a p-well drive and receives first and second discharge signals. The erase discharge circuit operates during a discharge cycle in a first mode in response to the first discharge signal to couple the first node to the second node and to discharge voltages on the first and second nodes at a first rate. The erase discharge circuit operates in a second mode in response to the second discharge signal to couple the first node to the second node to discharge the voltages on the first and second nodes at a second rate.

Abstract: A localized direct sense architecture circuit includes a large number (e.g. 8) of microcells, each having a primary sense amp PSA, coupled to one global data line which is coupled to one secondary sense amp SSA. Each PSA includes its own bias current device, which supplies bias current to sense devices in the PSA and is also used for precharge, such that the bias current does not flow along the highly capacitive global data line. With this technical approach, the size of each bias current supply device can be substantially reduced, and the number of PSAs on one global data line can be increased for increased layout density.

Abstract: A memory device implements a reading operation. The memory device includes first, second, and third memory cells; a read circuit coupled to the memory cells and operable to read first, second, and third values, respectively, from the first, second, and third memory cells; and a comparison circuit coupled to the read circuit and operable to compare the first and second values with fourth and fifth predetermined values and to generate a data-valid signal that indicates that the third value is valid if the first and second values equal the fourth and fifth values, respectively. The memory device may further include a selection circuit coupled to the read circuit and to the comparison circuit and operable to couple the third value to a data bus in response to the data-valid signal.

Abstract: A high voltage generating circuit includes a standby high voltage generating means and an active high voltage generating means. The standby high voltage generating means detects a level of a high voltage in both a standby mode and an active mode to boost the high voltage when the level of the high voltage is lower than a predetermined level. The active high voltage generating means varies a voltage boosting ability responsive to a control signal when an active command is applied in the active mode to thereby boost the level of the high voltage. The active high voltage generating means also detects whether the level of the high voltage is lower than the predetermined level to adjust a level of the control signal.

Abstract: An SRAM system is provided having an array of SRAM cells including at least one circuit receiving a first power voltage and a power control circuit for supplying a second power voltage to at least one selected circuit of the at least one circuit. The system is one of a memory array and a logic system, and a circuit of the at least one circuit is one of a memory cell of the memory array, a sense amplifier of the memory array and a path of the logic system. A method is also provided for providing a power supply voltage to at least one circuit of a system.

Abstract: As the number of signaling wires increase in integrated circuits, power consumption, related to charging and discharging of wiring capacitance also increases and emerges as a serious obstacle to the advancement of semiconductor technology. The present invention provides a novel quad-state memory element which can be used as a fundamental building block for designing high speed, high density, and low power integrated circuits.

Abstract: Present invention describes an efficient implementation of differential sensing in single ended DRAM arrays. According to one embodiment of the present invention, a respective local sense amplifier compares the accessed memory cell data with a dummy cell data in the opposite or adjacent block of the accessed block that is connected to a respective local bit line in the opposite block, amplifies the result of the comparison and puts the data on a global bit line. In one embodiment, the invention is process and temperature invariant using reference method and means for canceling cross coupling between read lines and write lines.

Abstract: Two types of command interval specifications are defined as first and second command interval specifications. The first command interval specifications is defined as the relationship between a preceding command and a following command that are issued for the same bank, while the second command interval specifications is defined as the relationship between a preceding command and a following command that are issued for different banks, respectively. As for the second command interval specification, since target banks are different between a preceding command and a following command, the following command is executed during the column circuits precharge after the preceding command. Therefore, in the case of the second command interval specification, a command interval is substantially shortened. In addition, pairs of banks are defined as bank pairs, and are applied the first and second command interval specifications, so that the DRAM device is small-sized.

Abstract: A method for recognizing a defective memory cell in a memory having a plurality of memory cells includes directly comparing predetermined properties of the memory cells to one another. Predetermined identical information is read into each memory cell of the plurality of memory cells, and then the information stored in the plurality of memory cells is read out. For each one of the plurality of memory cells a strength of a read-out signal is determined, and the memory cells are sorted depending on the strength of the respective read-out signal.

Abstract: A semiconductor device includes a plurality of DRAM memory cells each having first, second, and third MOS transistors; a plurality of first word lines coupled to the gates of the first MOS transistors; a plurality of second word lines coupled to the gates of the second MOS transistors; a plurality of first bit lines coupled to the source/drain paths of the first MOS transistors; and a plurality of second bit lines coupled to the source/drain paths of the second MOS transistors. The plurality of DRAM memory cells includes a series of such memory cells defining a plurality of groups of k memory cells, and the plurality of first word lines includes a group of k first word lines, each of which is coupled to a gate of a first MOS transistor only in every kth DRAM memory cell of the series, wherein k is greater than one.

Abstract: A memory device includes an array of memory cells. When in use, each cell can store a charge representing a binary digit of data. Data lines are connected to the memory cells. The data lines are connected to both apply a voltage to the cells to store the charge and to receive a voltage from charge stored in the cells to read a binary digit of data. Read lines are connected to the cells to selectively connect the cell to the data line to apply voltage either from the data lines to the cells or from the cells to the data lines. Control lines also connect to the cells to configure the cells to provide a capacitance to which the data lines can apply voltage and to configure the cells to maintain charge stored in the cells by virtue of a power supply.

Abstract: A semiconductor memory device having a mode control circuit includes a mode entrance portion for outputting an output signal in response to an external control signal, a mode entrance control portion for generating a mode entrance enable signal, MDEN, for controlling entry by the semiconductor device into a specific mode, for example a test mode, and a logic portion for combining the two to generate a mode signal for setting the specific mode. The mode entrance control portion includes a first and second fusing portion each including a fuse and a power-up signal for activating the MDEN in a case where the first and second fuses are maintained at an initial state or are changed at the initial state, and deactivating the MDEN otherwise. The mode control circuit prevents improper entry into the specific mode.

Abstract: A method of and apparatus for connecting the sense current line in a cross-point memory array greatly reduces the effect of reverse leakage from unaddressed row or column lines. Separate sense line segments are coupled to separate stripes of row or column lines. Each sense line segment is connected to a sense diode, and each sense diode is connected to a sense bus. Each sense diode provides the current path for sensing on a selected row or column line, while allowing the leakage of only one diode per sense line segment for the unaddressed row or column lines. This arrangement results in wider margins for sensing the state of data cells in a cross-point memory array and simpler circuitry design for the memory array.