Abstract: Low-voltage differential signaling (LVDS) receiver circuits, electronic devices, and methods are provided. A LVDS receiver includes an input differential pair of transistors that receive a differential input signal. The input differential pair includes a first NMOS transistor that receives a first input signal and a second NMOS transistor that receives a second input signal. A third NMOS transistor has source and drain terminals respectively coupled to source and drain terminals of the first NMOS transistor, and a fourth NMOS transistor has source and drain terminals respectively coupled to source and drain terminals of the second NMOS transistor. A first level shifter is coupled to a gate of the third NMOS transistor, and a second level shifter is coupled to a gate of the fourth NMOS transistor.

Abstract: A multiplexer device includes a plurality of selection circuits and potential setting circuits. The plurality of selection circuits respectively receive a first data signal and a second data signal, and select a corresponding one of the first data signal and the second data signal as an output signal according to the first selection signal. When the second data signal is selected as the output signal, the potential setting circuit sets a potential of a node of a first selection circuit of the plurality of selection circuits to a first voltage. The first selection circuit is configured to receive a first data signal.

Abstract: The present application relates to electronics and in particular to switch drive circuits and more particularly to galvanically isolated switch circuits with power transfer from the switch driver input side to the switch side. More specifically, the present application provides a switch drive circuit using a single transformer to transfer control signals to a secondary side for control of the switch along with power to a secondary side circuit to drive the switch in response to the control signals. By detecting the control signal first before drawing current, the effects of leakage inductance in the transformer are reduced.

Abstract: A wireless power transmission system includes a first antenna, a second antenna configured to perform wireless power transmission with the first antenna, and a movement unit configured to move a position of the second antenna relative to the first antenna in a predetermined moving direction, wherein the second antenna is shorter in length in the moving direction than the first antenna, wherein a distance between at least one end portion of the first antenna in the moving direction and the second antenna at a position where the second antenna faces the end portion is longer than a distance between an intermediate portion of the first antenna and the second antenna at a position where the second antenna faces the intermediate portion, and wherein the intermediate portion of the first antenna is a portion of the first antenna excluding both end portions of the first antenna.

Abstract: Disclosed is a system and a method to use the system that includes a substrate to support a film of liquid helium and an electron subsystem confined by image forces in a direction perpendicular to the surface of the film, a side gate to electrostatically define a boundary of the electron subsystem, a trap gate to electrostatically define an electron trap located outside the boundary of the electron subsystem, and a load gate to selectively open and close access from the electron subsystem to the electron trap, wherein to open access to the electron trap is to apply a first load gate voltage to the load gate to allow the electrons to access the electron trap, and wherein to close access to the electron trap is to apply a second load gate voltage to the load gate to prevent the electrons from accessing the electron trap.

Abstract: A voltage controlled circuit includes a tracking circuit, an operational amplifier, a transistor, a feedback circuit and a sample and hold circuit. The tracking circuit generates an updated enabling voltage according to an enabling voltage, a sample enabling voltage and a sample reference voltage. The operational amplifier includes a first input terminal used to receive an input voltage, a second input terminal used to receive a feedback voltage, and an output terminal used to output a control voltage. The transistor includes a control terminal used to receive the control voltage, a first terminal used to receive a reference voltage, and a second terminal used to output a regulated voltage. The feedback circuit generates the feedback voltage according to the regulated voltage. The sample and hold circuit is used to sample the input voltage to generate the sample enabling voltage, and sample the feedback voltage to generate the sample reference voltage.

Abstract: A Quadrature Voltage Controlled Oscillator (Quad VCO) based on standard digital cells and delay cells, is adapted to generate two high-frequency output signals that are “in quadrature”, so they both oscillate with similar frequency while exhibiting a mutual phase offset of about 90 degrees, and a) the digital cells include a mix of digital circuits used for implementing standard flip-flop circuits and standard logic gates; and b) the delay cells include circuits accepting a logic signal at their input and outputting a time-delayed version of said input signal, with a time delay that may be varied by a control voltage analog signal that determines the cell delay.

Abstract: In described examples, an electronic circuit for determining a phase difference between a first clock signal and a second clock signal includes a timer circuit, circuitry for generating a selectively delayed transition of the second clock signal, and phase determination circuitry. The timer circuit produces an elapsed time between a transition of the first clock signal and the selectively delayed transition of the second clock signal. The circuitry for generating the selectively delayed transition of the second clock signal generates the selectively delayed transition in response to a random selection of a respective output from a plurality of second clock signal delay stages. The phase determination circuitry provides the phase difference in response to the elapsed time and the random selection of a respective output from a plurality of second clock signal delay stages.

Abstract: A digital phase-locked loop has a digitally controlled oscillator with a first coarse tuning field for coarse tuning of the oscillator frequency, a second coarse tuning field for tuning of the oscillator frequency at finer intervals than the first coarse tuning field, and a fine tuning field for tuning the oscillator to an output frequency at finer intervals than the second coarse tuning field. The second coarse tuning field provides open loop tuning and is linear and connected parallel to the first coarse tuning field. The second coarse tuning field provides wide field temperature compensation and frequency error determination at start up based on an interpolated frequency value obtained prior to start up. Faster settling is provided with less complex algorithms.

Abstract: An example current mirror arrangement includes a current mirror circuit, configured to receive an input current signal at an input transistor Q1 and output a mirrored signal at an output transistor Q2. The arrangement further includes a buffer amplifier circuit, having an input coupled to Q1 and an output coupled to Q2. The offset of the buffer amplifier circuit can be adjusted by including circuitry for an input or an output side offset adjustment or by implementing the buffer amplifier circuit as a diamond stage with individually controlled current sources for each of the transistors of the diamond stage. Providing an adjustable offset buffer in a current mirror arrangement may advantageously allow benefiting from the use of a buffer outside of a feedback loop of a current mirror, while being able to reduce the buffer offset due to mismatch between master and slave sides of the current mirror circuit.

Abstract: A silicon carbide power device is controlled by a driver and comprises a gate-to-source voltage and a source voltage, wherein the source voltage decreases according to an increase of the gate-to-source voltage, or the source voltage increases according to a decrease of the gate-to-source voltage. Thus, a spike caused by a change of the gate-to-source voltage is suppressed, thereby suppressing the crosstalk phenomenon of the silicon carbide power device.

Abstract: A debounce circuit and a method for masking or filtering a glitch from an input signal are provided. The debounce circuit includes a reset synchronizer circuit and a logic circuit. The reset synchronizer circuit receives the input signal, detects a glitch in the input signal and outputs one or more reset synchronizer output signals having a first reset synchronizer state indicating detection of the glitch. The logic circuit receives the one or more reset synchronizer output signals, determines that the one or more reset synchronizer output signals are in the first reset synchronizer state indicating detection of the glitch and in response to determining that the one or more reset synchronizer output signals are in the first reset synchronizer state, keeps an output signal of the debounce circuit in a present state of the output signal of the debounce circuit.

Abstract: A semiconductor device includes an I/O circuit configured to be supplied with a first voltage, a second voltage higher than the first voltage, and a third voltage higher than the second voltage, and to receive an input signal based on the first voltage. The I/O circuit includes an enabler circuit configured to be supplied with the second voltage, and to generate a first signal based on the second voltage, and a first level shifter circuit coupled to the enabler circuit, and configured to, based on the first signal, level-shift a signal based on the second voltage to a signal based on the third voltage.

Abstract: A PWM signal generator circuit includes a multiphase clock generator that generates a number n of phase-shifted clock phases having the same clock period and being phase shifted by a time corresponding to a fraction 1/n of the clock period. The PWM signal generator circuit determines for each switch-on duration first and second integer numbers, and for each switch-off duration third and fourth integer numbers. The first integer number is indicative of the integer number of clock periods of the switch-on duration and the second integer number is indicative of the integer number of the additional fractions 1/n of the clock period of the switch-on duration. The third integer number is indicative of the integer number of clock periods of the switch-off duration, and the fourth integer number is indicative of the integer number of the additional fractions 1/n of the clock period of the switch-off duration.

Abstract: Apparatus and methods for providing hot-switching immunity for radio frequency switching circuits are disclosed. A radio frequency switching circuit may include both a mechanical switch and a solid-state switch. The mechanical switch may be configurable to couple an output path of a power amplifier to a subsequent component in its transmission path when in a first mechanical switch state and to decouple the output path of the power amplifier from the subsequent component when in a second mechanical switch state. The solid-state switch may be configurable to operatively decouple the mechanical switch from a radio frequency power source when in a first solid-state switch state but not when in a second solid-state switch state. The solid-state switch may be in the first solid-state switch state during transitions of the mechanical switch between the first and second mechanical switch states.

Abstract: A gate driver circuit receiving an input control signal and providing a voltage at a gate terminal of a semiconductor switching device (e.g., an IGBT) may include: (i) a first voltage source providing a first voltage; (ii) a second voltage source providing a second voltage, wherein the first voltage is higher than the second voltage; and (iii) a selector circuit selecting, based on the input control signal's logic state, either the first voltage or the second voltage to be placed on the gate terminal of the semiconductor switching device.

Abstract: Multi-level buffers for biasing of radio frequency (RF) switches are provided. An RF switching circuit that includes a field-effect transistor (FET) switch, an impedance, and a multi-level buffer that provides a switch control voltage to a gate of the FET through the impedance is disclosed. The multi-level buffer receives a control signal to turn on or off the FET switch. Additionally, the multi-level buffer is implemented with stacked inverters that operate using different clock signal phases to pulse the switch control voltage in response to a transition of the control signal to thereby shorten a delay in switching the FET switch.

Abstract: A device includes a semiconductor die. The semiconductor die has formed thereon a plurality of multi-phase voltage regulator modules of the same design formed on a common semiconductor substrate.

Abstract: A circuit for charge-balanced current-controlled stimulation. The circuit includes a transistor differential pair, a first current mirror, a second current mirror, and a third current mirror. The transistor differential pair includes a first differential input node, a second differential input node, a first differential output node, a second differential output node, and a common node. The transistor differential pair is configured to generate a first differential current that passes through the first differential output node and a second differential current that passes through the second differential output node. The first current mirror is configured to generate a first mirrored current based on the first differential current. The second current mirror is configured to generate a second mirrored current based on the second differential current. The third current mirror is configured to generate a third mirrored current based on the first mirrored current.

Abstract: A driver circuit comprises a first buffer receiving a control signal, and a first transistor coupled to first buffer and an output. A second transistor is coupled to a first current mirror and the output. A third transistor is coupled to the output and an inverter. A fourth transistor receives the inverter's output at its control input and is coupled to the output. A fifth transistor is coupled to third transistor. The second, third, and fifth transistors receive supply voltage at their respective control inputs. A sixth transistor receives the control signal's inverse at its control input and is coupled to fifth transistor and a second current mirror. A current source is coupled to second current mirror and a second buffer. A seventh transistor receives the second buffer's output at its control input and is coupled to first buffer. An eighth transistor is coupled to first buffer and seventh transistor.