Patents Examined by Kenneth A Bratland, Jr.
  • Patent number: 10370773
    Abstract: A method for manufacturing a plurality of synthetic single crystal diamonds, the method comprising: forming a plurality of seed pads, each seed pad comprising a plurality of single crystal diamond seeds anchored to, or embedded in, an inert holder; loading a carbon source, a metal catalyst, and the plurality of seed pads into a capsule; loading the capsule into a high pressure high temperature (HPHT) press; and subjecting the capsule to a HPHT growth cycle to grow single crystal diamond material on the plurality of single crystal diamond seeds, the HPHT growth cycle comprising: initiating HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds by increasing pressure and temperature; maintaining HPHT growth of single crystal diamond material on the plurality of single crystal diamond seeds via a pressure driven growth process by controlling and maintaining pressure and temperature; and terminating HPHT growth of single crystal diamond material on the plurality of single
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: August 6, 2019
    Assignee: Element Six Technologies Limited
    Inventors: Dietrich Borse, Eugen Gura, Carlton Nigel Dodge, Raymond Anthony Spits
  • Patent number: 10364510
    Abstract: There is provided a substrate for crystal growth used for a vapor phase growth of a crystal, wherein a plurality of seed crystal substrates made of a group III nitride crystal are arranged in a disc shape, so that their main surfaces are parallel to each other and adjacent lateral surfaces are in contact with each other; and the plurality of seed crystal substrates constituting at least a portion other than a peripheral portion of the substrate for crystal growth respectively has a main surface whose planar shape is a regular hexagon, and a honeycomb pattern obtained by matching the seed crystal substrates has two or more symmetries, when the substrate for crystal growth is rotated once, with an axis passing through a center of a main surface of the substrate for crystal growth and orthogonal to the main surface as a central axis.
    Type: Grant
    Filed: November 25, 2016
    Date of Patent: July 30, 2019
    Assignees: SCIOCS COMPANY LIMITED, SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventor: Tekehiro Yoshida
  • Patent number: 10364493
    Abstract: An exhaust apparatus using a gas curtain instead of a mechanical opening/closing structure is provided. The exhaust apparatus includes: a first region; a second region connected to the first region; a third region connected to the first region; and a first gas line connected to the second region, wherein when gas is supplied to the first gas line, the first region does not communicate with the second region but communicates with the third region.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: July 30, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Hak Joo Lee, Dae Youn Kim, Seung Wook Kim, Jin Seok Park, Jae Hyun Kim
  • Patent number: 10358741
    Abstract: Provided is an inexpensive seed material for liquid phase epitaxial growth of silicon carbide. A seed material 12 for liquid phase epitaxial growth of a monocrystalline silicon carbide includes a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph. Upon X-ray diffraction of the surface layer thereof, a first-order diffraction peak corresponding to a (111) crystal plane is observed as a diffraction peak corresponding to the polycrystalline silicon carbide with a 3C crystal polymorph but no other first-order diffraction peak having a diffraction intensity of 10% or more of the diffraction intensity of the first-order diffraction peak corresponding to the (111) crystal plane is observed.
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: July 23, 2019
    Assignee: TOYO TANSO CO., LTD.
    Inventors: Satoshi Torimi, Satoru Nogami, Tsuyoshi Matsumoto
  • Patent number: 10351951
    Abstract: A substrate treatment apparatus includes: a reaction tube including a substrate treatment region in which a substrate is treated; and a furnace opening member disposed in a lower portion of the reaction tube. The reaction tube includes a flange formed to protrude outward in the lower portion of the reaction tube, and an extension portion formed to extend downward from a lower end of the flange, the extension portion being formed to have a thickness larger than a thickness of the reaction tube at a position corresponding to the substrate treatment region, and being configured to cover an inner circumferential surface of the furnace opening member. An inner surface of the extension portion protrudes more inward than an inner surface of the reaction tube at the position corresponding to the substrate treatment region.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: July 16, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Keishin Yamazaki, Satoru Murata, Shinya Morita
  • Patent number: 10337118
    Abstract: An apparatus for doping a melt of semiconductor or solar-grade material is provided. The apparatus includes a seed chuck, a seed crystal connected to the seed chuck, and a dopant container connected to the seed chuck. The seed chuck defines a first end of the apparatus, and the seed crystal defines a second end of the apparatus. The seed crystal is configured to initiate crystal growth when placed in contact with the melt. The dopant container is positioned between the first end and the second end of the apparatus, and defines a reservoir for holding dopant therein. The dopant container is configured to dispense liquid dopant into the melt when positioned proximate the melt. The dopant container and the seed crystal are connected to the seed chuck simultaneously.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: July 2, 2019
    Assignee: Corner Star Limited
    Inventors: Jihong Chen, Joseph Holzer
  • Patent number: 10329687
    Abstract: To reduce ungrown region or abnormal grain growth region in growing a Group III nitride semiconductor through a flux method. A seed substrate has a structure in which a Group III nitride semiconductor layer is formed on a ground substrate as a base, and a mask is formed on the Group III nitride semiconductor layer. The mask has a plurality of dotted windows in an equilateral triangular lattice pattern. A Group III nitride semiconductor is grown through flux method on the seed substrate. Carbon is placed on a lid of a crucible holing the seed substrate and a molten mixture so that carbon is not contact with the molten mixture at the start of crystal growth. Thereby, carbon is gradually added to the molten mixture as time passes. Thus, ungrown region or abnormal grain growth region is reduced in the Group III nitride semiconductor crystal grown on the seed substrate.
    Type: Grant
    Filed: September 6, 2017
    Date of Patent: June 25, 2019
    Assignee: TOYODA GOSEI CO., LTD.
    Inventors: Miki Moriyama, Shiro Yamazaki, Yasuhide Yakushi
  • Patent number: 10323334
    Abstract: The present invention is a method for producing a quartz glass crucible for pulling a single crystal silicon from a silicon melt held therein, including the steps of: producing a quartz glass crucible having an outer layer including an opaque quartz glass containing bubbles therein and an inner layer including a transparent quartz glass containing substantially no bubbles; roughening a region of an inner surface of the produced quartz glass crucible, the region being in contact with the silicon melt when holding the silicon melt; and heating the quartz glass crucible having the roughened inner surface to crystallize a surface of the roughened region. This can produce a quartz glass crucible for pulling a single crystal silicon which can suppress generation of a brown ring on the inner surface of the crucible during pulling the single crystal silicon and can suppress crystallinity disorder of the single crystal silicon.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: June 18, 2019
    Assignee: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
    Inventor: Yuji Baba
  • Patent number: 10302864
    Abstract: An example method of forming a deterministic thin film from a crystal substrate is described herein. The method can include implanting ions into a surface of the crystal substrate to form a thin film crystal layer, and bonding the crystal substrate and a handle substrate to form a bilayer bonding interface between the crystal substrate and the handle substrate. The method can also include exfoliating the thin film crystal layer from the crystal substrate, patterning the thin film crystal layer to define a deterministic thin film, etching one or more trenches in the thin film crystal layer, etching the bilayer bonding interface via the one or more trenches, and releasing the deterministic thin film from the handle substrate.
    Type: Grant
    Filed: June 2, 2017
    Date of Patent: May 28, 2019
    Assignee: Ohio State Innovation Foundation
    Inventors: Ronald M. Reano, Li Chen
  • Patent number: 10304607
    Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.
    Type: Grant
    Filed: August 3, 2017
    Date of Patent: May 28, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jozef Kudela, Carl A. Sorensen, John M. White
  • Patent number: 10304666
    Abstract: A plasma processing apparatus includes: a chamber; a placing table; an exhaust path provided around the placing table to surround the placing table, and configured to exhaust a gas within a processing space above the semiconductor wafer placed on the placing table; an exhaust device configured to exhaust the gas within the processing space through the exhaust path; a baffle plate having a plurality of through holes and provided between the processing space and the exhaust path to surround the placing table; and a rectifying plate provided around the placing table to surround the placing table within the exhaust path at a position farther from the processing space than the baffle plate, and forming an opening within the exhaust path to make a sectional area of a flow path within the exhaust path larger at a position farther from a position within the exhaust path connected to the exhaust device.
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: May 28, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Ryo Sasaki, Yusei Kuwabara
  • Patent number: 10297738
    Abstract: The present invention provides a metal-based thermoelectric conversion material having a high figure-of-merit ZT, the thermoelectric conversion material being a p-type or n-type full-Heusler alloy, having a composition of an Fe2TiA type (wherein A is Si and/or Sn), and including crystal grains having an average grain diameter of 30-500 nm. In particular, in the case where the composition of an Fe2TiA type is represented by the empirical formula Fe2+?Ti1+yA1+z, the values of ?, y, and z in an Fe—Ti-A ternary alloy phase diagram lie within the range ? surrounded by the points (50, 37, 13), (45, 30, 25), (39.5, 25, 35.5), (50, 14, 36), (54, 21, 25), and (55.5, 25, 19.5) in terms of (Fe, Ti, A) in at %.
    Type: Grant
    Filed: March 28, 2016
    Date of Patent: May 21, 2019
    Assignee: HITACHI METALS, LTD.
    Inventors: Akinori Nishide, Naoto Fukatani, Jyun Hayakawa
  • Patent number: 10287706
    Abstract: The present invention relates to an ingot growing device for growing a single crystal silicon ingot. According to one embodiment of the present invention, the ingot growing device comprises: a growing chamber having an inner space; a growing container located in the inner space and having a silicon solution accommodated therein; a heating unit encompassing the growing container and located thereat, and generating heat; and a susceptor for supporting the growing container, wherein the heating unit comprises: a first ring heater having a ring shape; a second ring heater having a ring shape and located at the lower part of the first ring heater; a first coupling part for coupling the first ring heater and the second ring heater; and a first ring support unit located between the first ring heater and the second ring heater and supporting the first ring heater.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: May 14, 2019
    Assignee: WOONGJIN ENERGY CO., LTD.
    Inventors: Sung Sun Baik, Il Sun Pang, Kwang Hun Kim
  • Patent number: 10280530
    Abstract: To provide a single crystal production apparatus that is capable of prolonging the lifetime of a heater, and capable of reducing the cost. A single crystal production apparatus of the present invention is the single crystal production apparatus which produces a single crystal of a metal oxide in an oxidative atmosphere, containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a high frequency coil heating the heater through high frequency induction heating; and a crucible heated with the heater, the heater containing a Pt-based alloy and having a zirconia coating on an overall surface of the heater.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: May 7, 2019
    Assignees: FUJIKOSHI MACHINERY CORP., SHINSHU UNIVERSITY
    Inventors: Keigo Hoshikawa, Yasuyuki Fujiwara, Keiichi Kohama, Shinji Nakanishi, Takumi Kobayashi, Etsuko Ohba
  • Patent number: 10273595
    Abstract: A lasing medium having a tailored dopant concentration and a method of fabrication thereof is disclosed. The lasing medium has a single crystal having a continuous body having a selected length, wherein the crystal comprises dopant distributed along the length of the body to define a dopant concentration profile. In one embodiment, the dopant concentration profile results in a uniform heating profile. A method of fabricating a laser crystal having a tailored dopant concentration profile includes arranging a plurality of polycrystalline segments together to form an ingot, the polycrystalline segments each having dopant distributed, providing a crystal seed at a first end of the ingot, and moving a heating element along the ingot starting from the first end to a second end of the ingot, the moving heating element creating a moving molten region within the ingot while passing therealong.
    Type: Grant
    Filed: February 23, 2018
    Date of Patent: April 30, 2019
    Assignee: Raytheon Company
    Inventor: Robert W. Byren
  • Patent number: 10260167
    Abstract: A method for producing a SiC single crystal with few dislocations and defects and a large diameter enlargement ratio is provided. A method for producing a SiC single crystal by solution process, wherein a bottom face of a seed crystal is (0001) or (000-1) face and has circular shape with at least a partially removed section and a circular arc-shaped section on an outer periphery, the number of the removed sections is one or more, shapes of the removed sections are bow-shaped with a minor arc or semi-circumference removed along a chord connecting two points on the circular arc, a central angle formed by a center of the circular shape and the two points is 40° or greater, and a total of the central angles of the removed sections is no greater than 180°, the method comprising forming a meniscus and growing the single crystal from the bottom face.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: April 16, 2019
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventor: Katsunori Danno
  • Patent number: 10246768
    Abstract: The present invention relates to metal micron-sized single crystals having a controlled curvature, which can be either fully or partially nanoporous; and to a process for growing of such single crystals from the confined volume of droplets of a eutectic composition melt comprising said metal as one of the two eutectic components, with no need of any fabrication steps.
    Type: Grant
    Filed: April 1, 2015
    Date of Patent: April 2, 2019
    Assignee: TECHNION RESEARCH & DEVELOPMENT FOUNDA
    Inventors: Boaz Pokroy, Maria Koifman Khristosov
  • Patent number: 10233561
    Abstract: An electrostatic levitation crystal growth apparatus for a solution and a crystal growing method using the same. The apparatus may include an upper electrode, a lower electrode vertically spaced apart from the upper electrode, a power supply unit configured to apply a vertical electrostatic field between the upper electrode and the lower electrode, and a droplet dispenser configured to eject a solution into a region between the upper and lower electrodes and thereby to form a solution droplet. The solution droplet may be maintained in a charged state and may be electrostatically levitated against the gravity exerted thereon, by the vertical electrostatic field. The solution droplet may be evaporated in the electrostatically levitated state, and a solute dissolved in the solution may be grown to form a crystal.
    Type: Grant
    Filed: August 25, 2016
    Date of Patent: March 19, 2019
    Assignee: Korea Research Institute of Standards and Science
    Inventors: Geun-Woo Lee, Soo Heyong Lee
  • Patent number: 10227709
    Abstract: A method of growing a rare-earth oxyorthosilicate crystal, and crystals grown using the method are disclosed. The method includes preparing a melt by melting a first substance including at least one first rare-earth element and providing an atmosphere that includes an inert gas and a gas including oxygen.
    Type: Grant
    Filed: February 17, 2015
    Date of Patent: March 12, 2019
    Assignee: Siemens Medical Solutions USA, Inc.
    Inventors: Mark S. Andreaco, Peter Carl Cohen, Alexander Andrew Carey
  • Patent number: 10221500
    Abstract: Systems and methods for forming an ingot from a melt are disclosed. A system includes a crucible defining a cavity for receiving the melt, and a first and second barrier to inhibit movement of the melt. A first passageway and a second passageway are arranged to allow the melt located within an outer zone to move into and through a transition zone and into an inner zone. Conditioning members are placed in at least one of the zones and arranged to contact the melt to reduce the number of micro-voids in the melt.
    Type: Grant
    Filed: January 4, 2017
    Date of Patent: March 5, 2019
    Assignee: Corner Star Limited
    Inventors: Salvador Zepeda, Richard J. Phillips, Christopher Vaughn Luers, Steven Lawrence Kimbel, Harold W. Korb, John D. Holder, Carissima Marie Hudson, Hariprasad Sreedharamurthy, Stephan Haringer, Marco Zardoni