Patents Examined by Kenneth A Bratland, Jr.
  • Patent number: 11142821
    Abstract: A single crystal substrate is provided and is characterized in that the single crystal substrate has a foundation substrate provided with a plurality of grooves, which include a first crystal face and a second crystal face opposed to the first crystal face in an inner face thereof, and the extending direction of which is a <110> direction, and an angle formed by the first crystal face and the second crystal face is more than 70.6°. Further, it is preferred that the angle formed by the first crystal face and the second crystal face is 100° or more and 176° or less.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: October 12, 2021
    Inventors: Yukimune Watanabe, Noriyasu Kawana
  • Patent number: 11136690
    Abstract: The present disclosure provides a method for preparing a doped YAG single crystal fiber. The method may include placing a doped YAG single crystal fiber core into a growth zone and placing a raw material into a dissolution zone; adding a mineralizer into the growth chamber to cause the mineralizer to immerse the raw material and the doped YAG single crystal fiber core; heating the growth zone and the dissolution zone by a two-stage heating device, respectively; and preparing a doped YAG single crystal fiber by growing a YAG single crystal fiber cladding on a surface of the doped YAG single crystal fiber core based on the doped YAG single crystal fiber core and the raw material under a preset pressure.
    Type: Grant
    Filed: June 6, 2021
    Date of Patent: October 5, 2021
    Inventors: Yu Wang, Peng Gu, Zhenxing Liang
  • Patent number: 11118284
    Abstract: A vapor phase growth apparatus includes n (n is an integer of 2 or more) reactors; a primary gas supply path supplying a mixed gas to the reactors; n secondary gas supply paths connected to one of the reactors including a main secondary gas supply path and (n?1) auxiliary secondary gas supply paths; a first pressure gauge; a main flow rate controller provided in the main secondary gas supply path; (n?1) auxiliary flow rate controllers provided in the auxiliary secondary gas supply paths; a first control circuit instructing a first flow rate value; and a second control circuit calculating a second flow rate value being 1/n of a sum of a flow rate value measured by the main flow rate controller and flow rate values measured by the auxiliary flow rate controllers, and instructing the second flow rate value to the auxiliary flow rate controllers.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: September 14, 2021
    Assignee: NuFlare Technology, Inc.
    Inventor: Hideki Ito
  • Patent number: 11111599
    Abstract: The present invention provides a single crystal growth method capable of suppressing the recrystallization of the raw material gas subjected to sublimation on the surface of the raw material, and suppressing the generation of different polytypes in the crystal growing single crystal. The single crystal growth method is carried out in a crucible comprising an inner bottom for providing a raw material and a crystal mounting part facing the inner bottom. The method comprises in the following order: providing the raw material in the inner bottom; covering at least a part of a surface of the raw material with a metal carbide powder in a plan view from the crystal mounting part; and growing a single crystal disposed in the crystal mounting part by sublimating the raw material by heating.
    Type: Grant
    Filed: September 4, 2019
    Date of Patent: September 7, 2021
    Assignee: SHOWA DENKO K.K.
    Inventor: Yohei Fujikawa
  • Patent number: 11105016
    Abstract: A crystal growth apparatus, comprising a crucible, a heat-insulating material which covers a circumference of the crucible, and a heating member which is located on the outside of the heat-insulating material and is configured to perform induction heating of the crucible, wherein the heat-insulating material has a movable part, wherein the movable part forms an opening in the heat-insulating material by the movement of the movable part to control an opening ratio of the opening in the heat-insulating material.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: August 31, 2021
    Assignee: SHOWA DENKO K.K.
    Inventor: Daisuke Muto
  • Patent number: 11091851
    Abstract: An apparatus for manufacturing compound single crystal includes a crystal growth section to hold a seed crystal, a gas supply section to supply a metal-contained gas and a reactant gas toward the seed crystal, and a heating section to heat the seed crystal and a metal source. The gas supply section includes a crucible holding the metal source, a carrier gas supply unit, and a reactant gas supply unit. A porous baffle plate is provided in an opening of the crucible. The porous baffle plate satisfies a relationship of 80%?(1?VH/VB)×100<100% and a relationship of 0.0003<a2/L<1.1. VB is an apparent volume of the porous baffle plate, VH is a total volume of the through-holes contained in the porous baffle plate, “a” is a diameter of the through-hole, and L is a length of the through-hole.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: August 17, 2021
    Inventors: Taishi Kimura, Daisuke Nakamura
  • Patent number: 11085127
    Abstract: A method of growing a doped monocrystalline ingot using a crystal growing system is provided. The crystal growing system includes a growth chamber, a dopant feeding device, and a feed tube. The method includes preparing a melt of semiconductor or solar-grade material in a crucible disposed within the growth chamber, introducing a solid dopant into the feed tube with the dopant feeding device, melting the solid dopant within the feed tube to a form a liquid dopant, introducing the liquid dopant into the melt below a surface of the melt, and growing a monocrystalline ingot from the melt by contacting the melt with a seed crystal and pulling the seed crystal away from the melt.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: August 10, 2021
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Stephan Haringer, Marco D'Angella, Mauro Diodà
  • Patent number: 11078599
    Abstract: An apparatus for producing an ingot includes a crucible body having an opening and in which raw materials are accommodated, and a lid assembly located at the opening and having a portion fixed to the crucible body. The lid assembly includes a placement hole having open upper and lower ends, a frame member arranged along a periphery of the opening while surrounding a periphery of the placement hole, and a core member located in the placement hole and movable upward and downward with respect to the frame member.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: August 3, 2021
    Assignee: SKC Co., Ltd.
    Inventors: Byung Kyu Jang, Jung-Gyu Kim, Jung Woo Choi, Kap-Ryeol Ku, Sang Ki Ko
  • Patent number: 11072871
    Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: July 27, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Chih-Wei Kuo, Dai-Liang Ma, Chia-Hung Tai, Bang-Ying Yu, Cheng-Jung Ko, Bo-Cheng Lin, Hsueh-I Chen
  • Patent number: 11060206
    Abstract: Methods for purifying reaction precursors used in the synthesis of inorganic compounds and methods for synthesizing inorganic compounds from the purified precursors are provided. Also provided are methods for purifying the inorganic compounds and methods for crystallizing the inorganic compounds from a melt. ? and X-ray detectors incorporating the crystals of the inorganic compounds are also provided.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: July 13, 2021
    Assignee: Northwestern University
    Inventors: Mercouri G. Kanatzidis, Wenwen Lin
  • Patent number: 11047066
    Abstract: Methods for forming single crystal silicon ingots in which plural sample rods are grown from the melt are disclosed. A parameter related to the impurity concentration of the melt or ingot is measured. In some embodiments, the sample rods each have a diameter less than the diameter of the product ingot.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: June 29, 2021
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Carissima Marie Hudson, JaeWoo Ryu
  • Patent number: 11049717
    Abstract: A method for fabricating an ultra-thin graphite film on a silicon carbide substrate includes the steps of: (A) providing a polyamic acid solution and a siloxane-containing coupling agent for polymerizing under an inert gas atmosphere to form a siloxane-coupling-group-containing polyamic acid solution; (B) performing a curing process after applying the siloxane-coupling-group-containing polyamic acid solution to a silicon carbide substrate; (C) placing the silicon carbide substrate in a graphite crucible before placing the graphite crucible in a reaction furnace to perform a carbonization process under an inert gas atmosphere; (D) subjecting the silicon carbide substrate to a graphitization process to obtain a graphite film, thereby make it possible to fabricate an ultra-thin graphite film of high-quality on the surface of silicon carbide in a lower graphitization temperature range.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: June 29, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Dai-Liang Ma, Cheng-Jung Ko, Chia-Hung Tai, Jun-Bin Huang, Bang-Ying Yu
  • Patent number: 11041257
    Abstract: A shielding member includes a plurality of shielding plates, in which the plurality of shielding plates are arranged without gaps therebetween in a plan view from a crystal installation part, and the shielding member is disposed between a source material accommodation part and the crystal installation part, in an apparatus for growing single crystals, wherein the apparatus includes a container for crystal growth that has the source material accommodation part at an inner bottom part, and has the crystal installation part that faces the source material accommodation part, and includes a heating part that is configured to heat the container for crystal growth, in which a single crystal of the source material is grown on a crystal installed in the crystal installation part by subliming the source material from the source material accommodation part.
    Type: Grant
    Filed: April 23, 2019
    Date of Patent: June 22, 2021
    Assignee: SHOWA DENKO K.K.
    Inventors: Yoshiteru Hosaka, Yohei Fujikawa
  • Patent number: 11041255
    Abstract: A silicon carbide crystal and a manufacturing method thereof are provided. The silicon carbide crystal includes an N-type seed layer, a barrier layer, and a semi-insulating ingot, which are sequentially stacked and are made of silicon carbide. The N-type seed layer has a resistivity within a range of 0.01-0.03 ?·cm. The barrier layer includes a plurality of epitaxial layers sequentially formed on the N-type seed layer by an epitaxial process. The C/Si ratios of the epitaxial layers gradually increase in a growth direction away from the N-type seed layer. A nitrogen concentration of the silicon carbide crystal gradually decreases from the N-type seed layer toward the semi-insulating ingot by a diffusion phenomenon, so that the semi-insulating crystal has a resistivity larger than 107 ?·cm.
    Type: Grant
    Filed: June 24, 2019
    Date of Patent: June 22, 2021
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Ching-Shan Lin, Jian-Hsin Lu, Chien-Cheng Liou, I-Ching Li
  • Patent number: 11028498
    Abstract: A single crystal pulling apparatus including a dopant supplying means which includes: a charging device provided outside a chamber for storing a dopant and charging the dopant into the chamber; a sublimation room provided inside the chamber for holding and sublimating the dopant charged from the charging device; a carrier gas-introducing device for introducing a carrier gas into the sublimation room; and a blowing device for blowing the dopant sublimated in the sublimation room together with the carrier gas onto a surface of a raw-material melt. The blowing device includes a tube connected to the sublimation room and blowing ports such that the sublimated dopant is scattered from the blowing ports via the tube and blown onto the surface of the raw-material melt. This provides a single crystal pulling apparatus capable of efficient doping with a sublimable dopant within the shortest possible time.
    Type: Grant
    Filed: September 19, 2017
    Date of Patent: June 8, 2021
    Inventors: Satoshi Soeta, Kazuya Nakagawa
  • Patent number: 11024501
    Abstract: A method for removing a portion of a crystalline material (e.g., SiC) substrate includes joining a surface of the substrate to a rigid carrier (e.g., >800 ?m thick), with a subsurface laser damage region provided within the substrate at a depth relative to the surface. Adhesive material having a glass transition temperature above 25° C. may bond the substrate to the carrier. The crystalline material is fractured along the subsurface laser damage region to produce a bonded assembly including the carrier and a portion of the crystalline material. Fracturing of the crystalline material may be promoted by (i) application of a mechanical force proximate to at least one carrier edge to impart a bending moment in the carrier; (ii) cooling the carrier when the carrier has a greater coefficient of thermal expansion than the crystalline material; and/or (iii) applying ultrasonic energy to the crystalline material.
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: June 1, 2021
    Assignee: CREE, INC.
    Inventors: Matthew Donofrio, John Edmond, Hua-Shuang Kong, Elif Balkas
  • Patent number: 11001529
    Abstract: A crucible includes an outer element and an inner element. The outer element includes a first portion that is horizontal at a bottom end of the crucible and a second portion that ascends radially outwardly from the bottom end of the crucible to a top end of the crucible at a first acute angle to a vertical axis. The inner element includes a conus with a cylinder at a base of the conus. The conus descends radially outwardly from the top end of the crucible to the bottom end of the crucible at a second acute angle to the vertical axis. The inner element includes a base portion of the cylinder attached to the first portion of the outer element using a sealant to form a hollow mold between an inner portion of the outer element and an outer portion of the inner element.
    Type: Grant
    Filed: May 24, 2018
    Date of Patent: May 11, 2021
    Assignee: SILFEX, INC.
    Inventors: Rong Wang, Haresh Siriwardane, Igor Peidous, Vijay Nithianathan
  • Patent number: 10988857
    Abstract: A SiC single crystal growth apparatus of an embodiment includes a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material; a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.
    Type: Grant
    Filed: April 19, 2019
    Date of Patent: April 27, 2021
    Assignee: SHOWA DENKO K.K.
    Inventors: Rimpei Kindaichi, Yoshishige Okuno, Tomohiro Shonai
  • Patent number: 10988856
    Abstract: A single crystal is pulled by an FZ method, in which a polycrystal is melted by means of an electromagnetic melting apparatus and then recrystallized, wherein a first phase (P1) a lower end of the polycrystal, which is moved toward the melting apparatus, is melted by the melting apparatus to form a drop, and in a second phase (P2) a monocrystalline seed is attached to the lower end of the polycrystal and is melted beginning from an upper end of the seed, where a power (P) of the melting apparatus during the first phase (P1) and during the second phase (P2) is predetermined at least temporarily in dependence on a temperature and/or geometrical dimensions of crystal material used which comprises the drop and/or the seed and/or the polycrystal.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: April 27, 2021
    Assignee: Siltronic AG
    Inventor: Thomas Schroeck
  • Patent number: 10981800
    Abstract: Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: April 20, 2021
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jacob J. Richardson, Evan C. O'Hara