Abstract: A media for perpendicular recording and a method of creating the media is provided. The media includes a hard recording layer and a soft underlayer (SUL). The SUL is composed of at least two anti-ferromagnetically coupled (AFC) sub-underlayers. The sub-underlayers respond to a magnetic field established during dynamic reversal with respective magnetic fields. The sub-underlayers are formed and disposed to differ in one or more magnetic moment, anisotropy, and thickness, so that their respective magnetic fields constructively interfere in one or more points in the hard recording layer, thereby reducing a total SUL magnetic field response to the dynamic reversal field approximately to zero at one or more points in the hard recording layer, which reduces side track erasure.
Type:
Grant
Filed:
January 13, 2009
Date of Patent:
December 25, 2012
Assignee:
Seagate Technology LLC
Inventors:
Kaizhong Gao, Qixu Chen, Chung-Hee Chang, Thomas Patrick Nolan
Abstract: A magnetic recording medium a magnetic recording medium includes a soft magnetic layer formed on a substrate, magnetic patterns made of a protruded ferromagnetic layer separated from each other on the soft magnetic layer, and a nonmagnetic layer formed between the magnetic patterns, a nitrogen concentration therein being higher on a surface side than on a substrate side.
Abstract: Embodiments of the invention reduce generation of a magnetic field with a polarity reverse to that of the recording magnetic field, without deteriorating a gradient in the magnetic field. An embodiment of a magnetic disk device according to the present invention suppresses deviation and erase of already recorded data. In an embodiment, the perpendicular magnetic recording head includes the main magnetic pole, an auxiliary magnetic pole, a trailing shield disposed on the trailing side of the main magnetic pole with a non-magnetic film placed in-between, and side shields disposed on both the sides of the main magnetic pole in the direction of the track width with a non-magnetic film placed in-between. The trailing shield has on the trailing side a portion where film thickness is thinner on the trailing side than the thickness of its element in the height direction in its position facing the main magnetic pole.
Type:
Grant
Filed:
November 19, 2008
Date of Patent:
December 25, 2012
Assignee:
Hitachi Global Storage Technologies Netherlands B.V.
Abstract: A magnetic sensor comprises a nonmagnetic conductive layer, a free magnetization layer disposed on a first part of the nonmagnetic conductive layer, a fixed magnetization layer disposed on a second part of the nonmagnetic conductive layer different from the first part, upper and lower first magnetic shield layers opposing each other through the nonmagnetic conductive layer and free magnetization layer interposed therebetween, upper and lower second magnetic shield layers opposing each other through the nonmagnetic conductive layer and fixed magnetization layer interposed therebetween, and an electrically insulating layer disposed between the lower second magnetic shield layer and the nonmagnetic conductive layer, while the lower first magnetic shield layer is arranged closer to the nonmagnetic conductive layer than is the lower second magnetic shield layer.
Abstract: A laminated high moment film with a non-AFC configuration is disclosed that can serve as a seed layer for a main pole layer or as the main pole layer itself in a PMR writer. The laminated film includes a plurality of (B/M) stacks where B is an alignment layer and M is a high moment layer. Adjacent (B/M) stacks are separated by an amorphous layer that breaks the magnetic coupling between adjacent high moment layers and reduces remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. The amorphous material layer may be made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, Ti, Cr, Nb, or Si, or may be Hf, Zr, Ta, Nb, CoFeB, CoB, FeB, or CoZrNb. Alignment layers are FCC soft ferromagnetic materials or non-magnetic FCC materials.
Type:
Grant
Filed:
November 13, 2008
Date of Patent:
December 11, 2012
Assignee:
Headway Technologies, Inc.
Inventors:
Kunliang Zhang, Min Li, Min Zheng, Fenglin Liu, Xiaomin Liu
Abstract: The invention relates to a phase change magnetic composite material for use in an information recording medium, said material comprising a phase change material component, and a ferromagnetic material component, wherein said material exhibits both magnetic effects and phase change effects, and is usable for optical media, phase change random access memory (PCRAM) devices, magnetic random access memory (MRAM) devices, solid state memory devices, sensor devices, logical devices, cognitive devices, artificial neuron network, three level device, control device, SOC (system on chip) device, and semiconductors.
Type:
Grant
Filed:
October 17, 2005
Date of Patent:
December 11, 2012
Assignee:
Agency for Science, Technology and Research
Inventors:
Luping Shi, Wendong Song, Xiangshui Miao, Tow Chong Chong
Abstract: A perpendicular magnetic recording medium is disclosed that achieves improved recordability without deteriorating thermal stability by reducing the switching field. A perpendicular magnetic recording medium of the invention has a first magnetic recording layer and a second magnetic recording layer between with is interposed a coupling layer that ferromagnetically couples the two layers. The first and second magnetic recording layers satisfy an inequality Ku1T1>Ku2T2 in the case where Hk1 >Hk2 and an inequality Ku1T1<Ku2T2 in the case where Hk1<Hk2, where Hk1 and Hk2 are anisotropy magnetic fields, Ku1 and Ku2 are uniaxial anisotropy constants, and T1 and T2 are thicknesses of the first magnetic recording layer and the second recording layer, respectively. An exchange coupling energy between the magnetic recording layers is preferably at least 5×10?3 erg/cm2.
Abstract: A magnetic artificial superlattice is composed of laminated thin films including two or more kinds of magnetic flaky particles (magnetic titania nanosheets) obtained by exfoliation of a layer titanium oxide in which Ti atoms in the lattice have been substituted with magnetic elements.
Abstract: A method and system for providing a magnetic transducer is described. The method and system include providing a magnetoresistive structure having a plurality of sides. At least one oxidation buffer layer covers at least the plurality of sides. The method and system also include providing at least one oxide layer after the oxidation buffer layer is provided. The oxide layer(s) reside between the sides and the oxidation buffer layer(s).
Abstract: A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
Abstract: The present disclosure provides a magnetic recording head for a data storage system having improved write field characteristics. In one example, an apparatus having magnetic properties is provided. The apparatus includes a pole, a shield, and a multilayer block positioned between the pole and the shield. The multilayer block includes a plurality of layers wherein at least one of the plurality of layers comprises a magnetic material. In one embodiment, the multilayer block provides an antiferromagnetic coupling between the pole and the shield such that a magnetization of the pole is in a first direction and a magnetization of the shield in a second direction that is substantially anti-parallel to the first direction.
Type:
Grant
Filed:
February 20, 2009
Date of Patent:
October 16, 2012
Assignee:
Seagate Technology LLC
Inventors:
Mark Thomas Kief, Sharat Batra, Inturi Venkateswara Rao
Abstract: A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.
Abstract: The invention relates to inorganic, intermetallic, inhomogeneous compounds having a magnetic resistance effect and an intrinsic field sensitivity of at least 7% at 1 T at room temperature. The invention further relates to a method for the production and use thereof, particularly as magnetic field sensors or in spin electronics.
Abstract: A magneto-resistive effect (MR) element includes a first magnetic layer and a second magnetic layer in which a relative angle of magnetization directions of the first and second magnetic layers changes according to an external magnetic field; and a spacer layer that is provided between the first magnetic layer and the second magnetic layer. The spacer layer contains gallium nitride (GaN) as a main component.
Abstract: A spin transfer oscillator (STO) structure is disclosed that includes two assist layers with perpendicular magnetic anisotropy (PMA) to enable a field generation layer (FGL) to achieve an oscillation state at lower current density for MAMR applications. In one embodiment, the STO is formed between a main pole and write shield and the FGL has a synthetic anti-ferromagnetic structure. The STO configuration may be represented by seed layer/spin injection layer (SIL)/spacer/PMA layer 1/FGL/spacer/PMA layer 2/capping layer. The spacer may be Cu for giant magnetoresistive (GMR) devices or a metal oxide for tunneling magnetoresistive (TMR) devices. Alternatively, the FGL is a single ferromagnetic layer and the second PMA assist layer has a synthetic structure including two PMA layers with magnetic moment in opposite directions in a seed layer/SIL/spacer/PMA assist 1/FGL/spacer/PMA assist 2/capping layer configuration. SIL and PMA assist layers are laminates of (CoFe/Ni)x or the like.
Abstract: A magnetoresistive tunnel junction sensor having improved free layer stability, as well as improved free sensitivity. The free layer is constructed to have a low magnetic coercivity which improves free layer sensitivity. The free layer is also constructed to have a negative magnetostriction which improves free layer stability by preventing the free layer from having an easy axis that is oriented perpendicular to the air bearing surface.
Type:
Grant
Filed:
December 18, 2007
Date of Patent:
September 18, 2012
Assignee:
Hitachi Global Storage Technologies Netherlands B.V.
Abstract: It is made possible to provide a magnetic head that generates a sufficient high-frequency magnetic field for assisting recording operations, and a magnetic recording device that includes the magnetic head. A magnetic head includes: a recording magnetic pole; a return yoke magnetically coupled to the recording magnetic pole; and at least two spin torque oscillators provided near the recording magnetic pole.
Abstract: Embodiments of the present invention help to produce discrete track media and bit patterned media having both excellent recording and reproducing performance and reliability. According to one embodiment, a manufacturing method forms a nonmagnetic layer mainly composed of the same element as a nonmagnetic element contained in magnetic recording layers and on the magnetic recording layers and a mask layer having apertures for forming more concentrated parts of the nonmagnetic element in the magnetic recording layers on the nonmagnetic layer. The method implants ions of the nonmagnetic element through the nonmagnetic layer masked by the mask layer to form the more concentrated parts of the nonmagnetic element in the magnetic recording layer.
Type:
Grant
Filed:
February 10, 2009
Date of Patent:
September 4, 2012
Assignee:
Hitachi Global Storage Technologies Netherlands B.V.
Abstract: A system according to one embodiment includes a write pole having an end region positioned towards an air bearing surface, a first flare point, and a second flare point positioned between the air bearing surface and the first flare point; and a shield positioned above the write pole, wherein a cross sectional area of the write pole at a point between the first and second flare points along a plane passing through the write pole and oriented about parallel to the air bearing surface is greater than a cross sectional area of the end region of the write pole along a plane oriented parallel to the plane passing through the second flare point. Additional systems and methods are also presented.
Type:
Grant
Filed:
December 31, 2008
Date of Patent:
September 4, 2012
Assignee:
Hitachi Global Storage Technologies Netherlands B.V.
Inventors:
Christian René Bonhôte, Quang Le, Jeffrey S. Lille, Vladimir Nikitin, Aron Pentek
Abstract: A magnetic recording head includes a write pole comprising a throat region. The throat region includes a lower portion having a substantially trapezoidal cross-section, and an upper portion having a substantially rectangular cross-section. In a beveled region of the write pole, the substantially rectangular cross-section of the upper portion decreases in height towards an air bearing surface of the magnetic recording head.