Patents Examined by Kevin Bernatz
  • Very thin high coercivity film and process for making it
    Patent number: 8591751
    Abstract: High Hc (>4,000 Oe) and high Hk (>1 Tesla) has been achieved in FePt films as thin as 70 Angstroms. This was accomplished by starting with a relatively thick film having the required high coercivity, coating it with a suitable material such as Ta, and then using ion beam etching to remove surface material until the desired thickness was reached.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: November 26, 2013
    Assignee: Headway Technologies, Inc.
    Inventors: Kunliang Zhang, Min Zheng, Min Li
  • Magnetic recording medium with controlled grain diameters
    Patent number: 8592061
    Abstract: In order to provide a magnetic recording medium having excellent electromagnetic conversion characteristics, a magnetic recording medium (10) is provided with a substrate (12), and a magnetic recording layer (20) formed on the substrate (12). The magnetic recording layer (20) is provided with a granular layer (32), i.e., a magnetic layer, including magnetic grains and a nonmagnetic material surrounding the magnetic grains in a section parallel to the main surface of the substrate. The ratio of the long diameter to the short diameter of each magnetic grain contained in the granular layer (32) is calculated in the section. In the histogram of such ratio, a half width at half maximum of the histogram is 0.6 or less and the variance of grain diameters of the magnetic grains in the section is 20% or less of the average grain diameter of the magnetic grains.
    Type: Grant
    Filed: September 26, 2007
    Date of Patent: November 26, 2013
    Assignee: WD Media (Singapore) Pte. Ltd.
    Inventors: Takahiro Onoue, Akira Shimada
  • Ferromagnetic laminated structure and manufacturing method thereof
    Patent number: 8586216
    Abstract: A large spin-polarized current can be provided. A single crystal MgO layer is grown on an Si single crystal substrate, being lattice-matched. Thereon, a ferromagnetic metal layer is grown. Growth plane of MgO layer formed on (100) plane of Si single crystal substrate is (100) plane. At interface between Si single crystal substrate and MgO layer, Si (100) [110] and MgO (100) [100] directions are parallel. FIG. 2(A) shows Si (100) plane, FIG. 2(B) MgO (100) plane, and FIG. 2(C) the state of these two planes being lattice-matched. Si (100) plane in FIG. 2(A) is constituted by Si atoms 111 alone, while MgO (100) plane in FIG. 2(B) is constituted by Mg atoms 121 and oxygen (O) atoms 122. MgO (100) plane is grown on Si (100) plane, and as shown in FIG. 2(C), Si (100) [110] and MgO (100) [100] directions are parallel at the interface.
    Type: Grant
    Filed: December 13, 2011
    Date of Patent: November 19, 2013
    Assignees: Akita Prefecture, TDK Corporation
    Inventor: Toshio Suzuki
  • Perpendicular magnetic recording medium and process for manufacture thereof
    Patent number: 8580410
    Abstract: An object of the present invention is to provide a perpendicular magnetic recording medium 100 including a magnetic recording layer 122, the medium in which a particle diameter of crystal grains in the magnetic recording layer 122 of a two-layer structure is so designed as to improve an SNR while a high coercive force is maintained.
    Type: Grant
    Filed: March 26, 2009
    Date of Patent: November 12, 2013
    Assignee: WD Media (Singapore) Pte. Ltd.
    Inventor: Takahiro Onoue
  • Perpendicular magnetic recording media having a dual onset layer
    Patent number: 8580409
    Abstract: Perpendicular magnetic recording (PMR) media and methods of fabricating PMR media are described. The PMR media includes, among other layers, an underlayer, a first onset layer on the underlayer, a second onset layer on the first onset layer, and a perpendicular magnetic recording layer on the second onset layer. The second onset layer has a magnetic moment which is higher than both a magnetic moment of the first onset layer and a magnetic moment of the perpendicular magnetic recording layer.
    Type: Grant
    Filed: November 9, 2009
    Date of Patent: November 12, 2013
    Assignee: HGST Netherlands B.V.
    Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Zhupei Shi
  • Apparatus for moving magnetic domain wall and memory device including magnetic field application unit
    Patent number: 8580408
    Abstract: An apparatus for moving a magnetic domain wall and a memory device using a magnetic field application unit are provided. The apparatus for moving a magnetic domain wall includes a magnetic layer having a plurality of magnetic domains; current supply units that are disposed on both sides of the magnetic layer and supply current to the magnetic layer; and a magnetic field application unit that is disposed on at least one surface of the magnetic layer and applies a magnetic field to the magnetic layer.
    Type: Grant
    Filed: November 28, 2007
    Date of Patent: November 12, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-su Kim, Sung-chul Lee
  • Magnetic element with reduced shield-to-shield spacing
    Patent number: 8582249
    Abstract: A magnetic element has a magnetically responsive lamination with a ferromagnetic free layer separated from a synthetic antiferromagnetic (SAF) layer by a spacer layer and from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The lamination is coupled to at least one antiferromagnetic (AFM) tab a predetermined offset distance from the ABS.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: November 12, 2013
    Assignee: Seagate Technology LLC
    Inventors: Victor Boris Sapozhnikov, Eric Walter Singleton, Mark William Covington
  • Magnetic structure including two ferromagnetically coupled magnetic layers and method of manufacturing same
    Patent number: 8574729
    Abstract: A magnetic structure includes a first magnetic layer, a nonmagnetic insulating layer, a nonmagnetic adhesion layer disposed on the top surfaces of the first magnetic layer and the nonmagnetic insulating layer, and a second magnetic layer disposed on the nonmagnetic adhesion layer. The nonmagnetic insulating layer contains an oxygen atom. The nonmagnetic adhesion layer is composed of one element or a plurality of elements selected from the group consisting of Al, Si and nonmagnetic transition metal elements except Ru, and the bond enthalpy of a diatomic molecule composed of an atom of the one element or each of the plurality of elements and an oxygen atom is 400 kJ/mol or higher. The nonmagnetic adhesion layer has a thickness within a range of 0.3 to 0.8 nm. The first magnetic layer and the second magnetic layer are ferromagnetically coupled to each other.
    Type: Grant
    Filed: April 23, 2008
    Date of Patent: November 5, 2013
    Assignee: TDK Corporation
    Inventors: Kenzo Makino, Masashi Sano, Atsushi Yamaguchi
  • Magnetic tracks, information storage devices using magnetic domain wall movement, and methods of manufacturing the same
    Patent number: 8574730
    Abstract: Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.
    Type: Grant
    Filed: June 11, 2008
    Date of Patent: November 5, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-jin Cho, Sung-chul Lee, Kwang-seok Kim, Ji-young Bae, Sun-ae Seo, Chang-won Lee
  • Electrodeposition of FeCoNiV films with high resistivity and high saturation magnetization
    Patent number: 8568909
    Abstract: A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FeWCoXNiYVZ in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density BS greater than 1.9 Telsa and a resistivity ? higher than 70 ?ohms-cm.
    Type: Grant
    Filed: May 11, 2012
    Date of Patent: October 29, 2013
    Assignee: Headway Technologies, Inc.
    Inventors: Feiyue Li, Xiaomin Liu
  • Thin seeded Co/Ni multilayer film with perpendicular anisotropy for read head sensor stabilization
    Patent number: 8563147
    Abstract: A hard bias (HB) structure for producing longitudinal bias to stabilize a free layer in an adjacent spin valve is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)X laminated layer. The (Co/Ni)X HB layer deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent process steps. After initialization, magnetization direction in the HB layer is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.
    Type: Grant
    Filed: June 24, 2009
    Date of Patent: October 22, 2013
    Assignee: Headway Technologies, Inc.
    Inventors: Kunliang Zhang, Min Li, Yuchen Zhou, Min Zheng
  • Perpendicular magnetic recording medium
    Patent number: 8557409
    Abstract: A perpendicular magnetic recording medium is disclosed that enables a high track density while maintaining good OW characteristics, SNR, and thermal stability. The medium includes a magnetic recording layer on a non-magnetic base, wherein the magnetic recording layer includes a first magnetic layer, a first exchange coupling control layer, a second magnetic layer, a third magnetic layer, and a fourth magnetic layer, in that order. It is preferable that when the perpendicular magnetic anisotropy constants of the first magnetic layer, second magnetic layer, third magnetic layer, and fourth magnetic layer are Ku1, Ku2, Ku3, and Ku4 respectively, relationships of Ku4>Ku3>Ku2 and Ku1>Ku3>Ku2 are satisfied.
    Type: Grant
    Filed: August 2, 2011
    Date of Patent: October 15, 2013
    Assignee: Fuji Electric Co., Ltd.
    Inventor: Sadayuki Watanabe
  • Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier
    Patent number: 8557407
    Abstract: A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.
    Type: Grant
    Filed: August 6, 2010
    Date of Patent: October 15, 2013
    Assignee: Headway Technologies, Inc.
    Inventors: Tong Zhao, Kunliang Zhang, Hui Chuan Wang, Yu-Hsia Chen, Min Li
  • Perpendicular media with dual soft magnetic layers
    Patent number: 8557408
    Abstract: A recording medium having a substrate, a first soft magnetic underlayer, a second soft magnetic underlayer and a perpendicular magnetic recording layer without a spacer layer between the first and second soft magnetic underlayers is disclosed.
    Type: Grant
    Filed: April 3, 2012
    Date of Patent: October 15, 2013
    Assignee: Seagate Technology LLC
    Inventors: Qixu Chen, Charles Brucker, Chung-Hee Chang, Tom Nolan, Samuel Dacke Harkness, IV
  • CCP-CPP magnetoresistive reader with high GMR value
    Patent number: 8551626
    Abstract: A magnetoresistive device having a high giant magnetoresistance (GMR) value and a moderate low resistance area product (RA) includes a first magnetic layer, a second magnetic layer, and a current confined path (CCP) spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer includes copper current confined paths extending between the first magnetic layer and the second magnetic layer in a matrix of magnesium oxide. The spacer layer is formed by a mixture copper and magnesium oxide, which is heattreated to form the copper current confined paths within the magnesium oxide matrix.
    Type: Grant
    Filed: June 25, 2009
    Date of Patent: October 8, 2013
    Assignee: Seagate Technology LLC
    Inventors: Qing He, Yonghua Chen, Juren Ding
  • Perpendicular magnetic disc
    Patent number: 8546000
    Abstract: A perpendicular magnetic disk that includes, a base 110, a granular magnetic layer 160, and a auxiliary recording layer 180 disposed as an upper layer of the granular magnetic layer 160. The granular magnetic layer 160 has a granular structure in which a grain boundary portion is formed by segregation of a non-magnetic substance containing an oxide as a main component around magnetic particles containing a CoCrPt alloy grown in a columnar shape as a main component. The auxiliary recording layer 180 contains a CoCrPtRu alloy as a main component and has a film thickness of 1.5 nm to 4.0 nm. With this structure, the auxiliary recording layer can be thinned while maintaining the function thereof to improve SNR.
    Type: Grant
    Filed: April 28, 2011
    Date of Patent: October 1, 2013
    Assignee: WD Media, LLC
    Inventor: Teiichiro Umezawa
  • Method and system for providing a magnetoresistive structure
    Patent number: 8545999
    Abstract: A method and system for providing a magnetoresistive structure are described. The magnetoresistive structure includes a first electrode, an insertion layer, a crystalline tunneling barrier layer, and a second electrode. The first electrode includes at least a first magnetic material and boron. The crystalline tunneling barrier layer includes at least one constituent. The insertion layer has a first boron affinity. The at least one constituent of the crystalline tunneling barrier layer has at least a second boron affinity that is less than the first boron affinity. The second electrode includes at least a second magnetic material.
    Type: Grant
    Filed: February 21, 2008
    Date of Patent: October 1, 2013
    Assignee: Western Digital (Fremont), LLC
    Inventors: Qunwen Leng, Mahendra Pakala, Yong Shen
  • Magnetic recording medium and method of manufacturing the same
    Patent number: 8535817
    Abstract: An aspect of the present invention relates to a magnetic recording medium comprising a nonmagnetic layer containing a nonmagnetic powder and a binder and a magnetic layer containing a ferromagnetic powder and a binder in this order on a nonmagnetic support, wherein the magnetic layer comprises a nonmagnetic powder of which coefficient of variation CV of a particle size distribution as denoted by the following formula (1): CV(%)=?/?×100??(1) is less than 20 percent, and the magnetic layer has a thickness being equal to or less than 0.1 ?m and falling within a range of 1.1??/t?8.0, wherein ? denotes a standard deviation of a particle diameter, ? denotes an average particle diameter of the nonmagnetic powder comprised in the magnetic layer being expressed in ?m, and t denotes a thickness of the magnetic layer being expressed in ?m.
    Type: Grant
    Filed: August 26, 2010
    Date of Patent: September 17, 2013
    Assignee: FUJIFILM Corporation
    Inventor: Noriko Imaoka
  • Polyetherimide resins with very low levels of residual contamination
    Patent number: 8535792
    Abstract: Compositions and methods for producing compositions comprising a monoamine-endcapped polyimide component. Based on a gas chromatography mass spectroscopy analysis of a surface rinse of the composition performed at room temperature, the composition can have at least one surface with less than or equal to 5 ppb releasable phosphorous residuals, and less than or equal to 5 ppb releasable volatile organic compound residuals. The composition can also comprise less than or equal to 10 ppb combined releasable residuals. Because of the very low levels of residual contamination, the compositions can be used to produce a variety of articles, including a disk drive.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: September 17, 2013
    Assignee: Sabic Innovative Plastics IP B.V.
    Inventors: Daniel Francis Lowery, Jamuna Chakravarti, Aaron Royer
  • Fine structural body, method for manufacturing fine structural body, magnetic memory, charge storage memory and optical information recording medium
    Patent number: 8535816
    Abstract: There are provided a fine structural body capable of manifesting an unprecedented property; a manufacturing method thereof; and a magnetic memory, a charge storage memory and an optical information recording medium employing such fine structural body. Unlike conventional bulk bodies phase-transited between nonmagnetic semiconductors and paramagnetic metals around about 460K, there can be provided a fine structural body 1 comprised of Ti3O5, but capable of manifesting an unprecedented property in which a paramagnetic metal property thereof is consistently maintained in all temperature ranges without undergoing phase transition to a nonmagnetic semiconductor.
    Type: Grant
    Filed: July 13, 2009
    Date of Patent: September 17, 2013
    Assignee: The University of Tokyo
    Inventors: Shin-ichi Ohkoshi, Yoshihide Tsunobuchi, Hiroko Tokoro, Fumiyoshi Hakoe, Kazuhito Hashimoto