Patents Examined by Kevin Bernatz
-
Patent number: 8248891Abstract: An apparatus includes a waveguide shaped to direct light to a focal point, and a near-field transducer positioned adjacent to the focal point, wherein the near-field transducer includes a dielectric component and a metallic component positioned adjacent to at least a portion of the dielectric component. An apparatus includes a waveguide shaped to direct light to a focal point, and a near-field transducer positioned adjacent to the focal point, wherein the near-field transducer includes a first metallic component, a first dielectric layer positioned adjacent to at least a portion of the first metallic component, and a second metallic component positioned adjacent to at least a portion of the first dielectric component.Type: GrantFiled: November 18, 2008Date of Patent: August 21, 2012Assignee: Seagate Technology LLCInventors: Lien Lee, Xuhui Jin, Kaizhong Gao, Amit Vasant Itagi, William Albert Challener
-
Patent number: 8241766Abstract: An apparatus includes a plurality of bilayer structures positioned adjacent to each other, each of the bilayer structures including a first layer of magnetic material having a first Curie temperature and a second layer of magnetic material positioned adjacent to the first layer, wherein the second layer has a second Curie temperature that is lower than the first Curie temperature, and magnetic grains of the first layer are unstable when the second layer of magnetic material is heated above the second Curie temperature. The recording temperature is reduced due to the smaller switching volume achieved by using vertically decoupled laminations at elevated temperatures.Type: GrantFiled: August 8, 2007Date of Patent: August 14, 2012Assignee: Seagate Technology LLCInventors: Bin Lu, Ganping Ju
-
Patent number: 8243558Abstract: A thermally assisted magnetic head includes a main magnetic pole for writing and a near-field light generator provided near the main magnetic pole, the near-field light generator having a non-magnetic base metal layer, a non-magnetic upper metal layer, an intermediate insulating layer interposed between the base metal layer and the upper metal layer, and the base metal layer having a V-shaped groove and also the upper metal layer having a projection facing the deepest part in the groove of the base metal layer, in a vertical cross-section parallel to a medium facing surface.Type: GrantFiled: January 30, 2009Date of Patent: August 14, 2012Assignee: TDK CorporationInventors: Eiji Komura, Koji Shimazawa
-
Patent number: 8238057Abstract: The present invention relates to a magnetic head and particularly to improvement of its recording element. The recording element includes a first magnetic film, a second magnetic film, a coil film, and an insulating film. The first magnetic film has a first pole portion. The second magnetic film has a second pole portion opposed to the first pole portion with a magnetic gap film therebetween and is joined to the first magnetic film at a back gap portion that is located in a rearward position with respect to a medium facing surface. The coil film extends around the back gap portion, and the insulating film encloses the coil film. Moreover, the second magnetic film entirely covers the insulating film.Type: GrantFiled: February 19, 2009Date of Patent: August 7, 2012Assignee: TDK CorporationInventors: Yuji Ito, Seiji Yari
-
Patent number: 8233234Abstract: A stepped main pole for a perpendicular write head and methods of making the stepped main pole. The stepped main pole has a main pole tip and a base portion. The main pole tip has a surface that forms part of the ABS and a first thickness. The base portion extends from the main pole tip and has a thickness that varies from the first thickness to a second thickness to form a slanted surface with an apex angle adjacent the main pole tip. By placing the base portion away from the ABS and providing a thickness that increases in a direction away from the ABS, the stepped pole can provide the necessary magnetic flux for writing, while avoiding undesired leakage and fringing. To form embodiments of the stepped main pole of the invention, a fluorine-based reactive ion etch (RIE) may be used. By using an RIE to define the stepped main pole, the apex angle can be better controlled and tight edge control can be achieved.Type: GrantFiled: December 23, 2008Date of Patent: July 31, 2012Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Wen-Chien D. Hsiao, Ming Jiang, Sue S. Zhang, Yi Zheng
-
Patent number: 8228632Abstract: A non-limiting embodiment of a magnetic writer has at least a write element having a write element tip and a conductive structure adjacent the write element. The conductive structure has at least two conductive elements positioned substantially parallel to one another and separated by an electrically insulating material. Each of the conductive elements carries a time-varying signal to generate an oscillating magnetic field from a displacement current between the two conductive elements, with the oscillating magnetic field being proximate the write element tip and extending parallel to the air bearing surface. A frequency of the oscillating magnetic field is a function of a frequency of the time-varying signal.Type: GrantFiled: May 20, 2009Date of Patent: July 24, 2012Assignee: Seagate Technology LLCInventors: Mark Anthony Gubbins, Alex Wong, Robert William Lamberton
-
Patent number: 8227099Abstract: This radio-frequency oscillator includes a magnetoresistive device in which a spin-polarized electric current flows. This device comprises a stack of at least a first so-called “anchored” magnetic layer having a fixed magnetization direction, a second magnetic layer, an amagnetic layer inserted between the above-mentioned two layers, intended to ensure magnetic decoupling of said layers. The oscillator also comprises means of causing a flow of electrons in said layers perpendicular to these layers and, if applicable, of applying an external magnetic field to the structure. The second magnetic layer has an excitation damping factor at least 10% greater than the damping measured in a simple layer of the same material having the same geometry for magnetic excitation having wavelengths equal to or less than the extent of the cone or cylinder of current that flows through the stack that constitutes the magnetoresistive device.Type: GrantFiled: April 23, 2008Date of Patent: July 24, 2012Assignees: Commissariat a l'Energie Atomique, Centre National de la Recherche ScientifiqueInventors: Bernard Dieny, Alina-Maria Deac-Renner
-
Patent number: 8218263Abstract: According to one embodiment, a system comprises an upper yoke having a first length defined between a pole tip thereof and a back gap thereof. In addition, the system includes a lower yoke having a second length defined between a pole tip thereof and a back gap thereof, the second length being greater than the first length. Also, the system includes coil turns in the upper and lower yokes. Additional systems and methods are also presented.Type: GrantFiled: December 22, 2008Date of Patent: July 10, 2012Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Donald G. Allen, Wen-Chien David Hsiao, Edward Hin Pong Lee, Jennifer Leung, Vladimir Nikitin
-
Patent number: 8216703Abstract: A magnetic tunnel junction (MTJ) (10) employing a dielectric tunneling barrier (16), useful in magnetoresistive random access memories (MRAMs) and other devices, has a synthetic antiferromagnet (SAF) structure (14, 16), comprising two ferromagnetic (FM) layers (26, 41; 51, 58; 61, 68) separated by a coupling layer (38, 56, 66). Improved magnetoresistance (MR) ratio is obtained by providing a further layer (44, 46, 46?, 47, 52, 62), e.g. containing Ta, preferably spaced apart from the coupling layer (38, 56, 66) by a FM layer (41, 30-2, 54). The further layer (44, 46, 46?, 47, 52, 62) may be a Ta dusting layer (44) covered by a FM layer (30-2), or a Ta containing FM alloyed layer (46), or a stack (46?) of interleaved FM and N-FM layers, or other combination (47, 62). Furthering these benefits, another FM layer, e.g., CoFe, NiFe, (30, 30-1, 51, 61) is desirably provided between the further layer (44, 46, 46?, 47, 52, 62) and the tunneling barrier (16).Type: GrantFiled: February 21, 2008Date of Patent: July 10, 2012Assignee: Everspin Technologies, Inc.Inventors: Jijun Sun, Jon M. Slaughter
-
Patent number: 8202635Abstract: The invention relates to a read only magnetic information carrier (1b, 1c, 1d) comprising a substrate (2), an information layer (3) and a stabilizing layer (15a, 15b). The information layer (3) comprises a pattern of magnetic bits (4) of magnetic material wherein the pattern of magnetic bits (4) constitutes an array of bit locations. The presence or absence of the magnetic material at a bit location represents a value of the bit location by a magnetic field (5) having a predetermined magnetization direction (6). The stabilizing layer (15a, 15b) is arranged between the substrate (2) and the information layer (3) and comprises hard magnetic material (8, 9) which is magnetically coupled to the magnetic material of the magnetic bit (4). The magnetically coupled hard magnetic material (8, 9) provides the predetermined magnetization direction (6) of the magnetic field (5).Type: GrantFiled: January 19, 2006Date of Patent: June 19, 2012Assignee: NXP B.V.Inventor: Jaap Ruigrok
-
Patent number: 8197953Abstract: A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.Type: GrantFiled: April 11, 2011Date of Patent: June 12, 2012Assignee: Seagate Technology LLCInventors: Haiwen Xi, Antoine Khoueir, Brian Lee, Pat Ryan, Michael Tang, Insik Jin, Paul E. Anderson
-
Patent number: 8194360Abstract: A shield for a read element of a magnetic recording head includes a first domain with boundaries remote from the read element and stabilized with a patterned bias element. The patterned bias element comprises a topographical pattern of grooves formed on the shield substrate.Type: GrantFiled: February 24, 2009Date of Patent: June 5, 2012Assignee: Seagate Technology LLCInventors: Declan Macken, Eric W. Singleton
-
Patent number: 8194361Abstract: It is made possible to provide a spin-torque oscillator that has a high Q value and a high output. A spin-torque oscillator includes: an oscillating field generating unit configured to generate an oscillating field; and a magnetoresistive element including a magnetoresistive effect film including a first magnetization pinned layer of which a magnetization direction is pinned, a first magnetization free layer of which a magnetization direction oscillates with the oscillating field, and a first spacer layer interposed between the first magnetization pinned layer and the first magnetization free layer.Type: GrantFiled: September 29, 2008Date of Patent: June 5, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Kiwamu Kudo, Tazumi Nagasawa, Koichi Mizushima, Rie Sato
-
Patent number: 8184398Abstract: A magnetic head includes a coil, a pole layer, and a coil adjacent layer. The coil includes a winding portion having two side surfaces. The coil adjacent layer is adjacent to at least part of the whole of the two side surfaces of the winding portion. The coil adjacent layer is formed of a nonmagnetic material having a linear thermal expansion coefficient of 5×10?6/° C. or smaller at a temperature of 25° C. to 100° C. and having a thermal conductivity of 40 W/m·K or higher at a temperature of 25° C.Type: GrantFiled: December 12, 2008Date of Patent: May 22, 2012Assignee: Headway Technologies, Inc.Inventors: Hironori Araki, Yoshitaka Sasaki, Hiroyuki Ito, Takehiro Horinaka, Kazuo Ishizaki, Shigeki Tanemura
-
Patent number: 8179633Abstract: A perpendicular magnetic recording system has a write head having a main coil (the write coil) and main pole (the write pole) that directs write flux in a direction perpendicular to the recording layer in the magnetic recording medium, and a transverse auxiliary pole (TAP) that injects auxiliary magnetic flux into the write pole at an angle to the primary or perpendicular axis of the write pole. The additional flux from the TAP, which is injected non-parallel to the primary magnetization of the write pole, exerts a torque on the magnetization of the write pole, thereby facilitating magnetization reversal of the write pole. The TAP is coupled to the main coil but not electrically connected to it. A separate passive coil, not electrically connected to the main coil, may be wrapped as a loop around the main pole and the TAP. Alternatively, the TAP may be located near one of the electrically conductive turns of the main coil.Type: GrantFiled: August 28, 2009Date of Patent: May 15, 2012Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: John Thomas Contreras, Manfred Ernst Schabes
-
Patent number: 8168309Abstract: Perpendicular recording media with sublayers of dual oxide dopant magnetic materials are disclosed. The magnetic layer may comprise multiple sublayers of magnetic materials. In each sublayer, dual oxide dopants are incorporated. The compositions of the sublayers can be the same or different depending on the application. The magnetic layer may be deposited using a target comprising a mixture of CoPtCrB and dual oxides as dopants. The layer deposited with such targets can be the entire magnetic layer or a sublayer.Type: GrantFiled: August 13, 2009Date of Patent: May 1, 2012Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Gunn Choe, Mohammad T. Mirzamaani, Kai Tang, Jinliu Wang
-
Patent number: 8169753Abstract: A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers is disclosed for reducing a read gap, in order to perform magnetic recording at higher linear densities. The ferromagnetic amorphous buffer and polycrystalline seed layers couples to a ferromagnetic lower shield, thus acting as part of the ferromagnetic lower shield and defining the upper surface of the ferromagnetic polycrystalline seed layer as the lower bound of the read gap. In addition, a CPP TMR or GMR read sensor with nonmagnetic and ferromagnetic cap layers is also disclosed for reducing the read gap, in order to perform magnetic recording at even higher linear densities. The ferromagnetic cap layer couples to a ferromagnetic upper shield, thus acting as part of the ferromagnetic upper shield and defining the lower surface of the ferromagnetic cap layer as the upper bound of the read gap.Type: GrantFiled: November 21, 2008Date of Patent: May 1, 2012Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventor: Tsann Lin
-
Patent number: 8168310Abstract: A magnetic storage medium according to one embodiment includes a substrate; a first oxide magnetic layer formed above the substrate; a second oxide magnetic layer formed above the first oxide magnetic layer; an exchange coupling layer formed above the second oxide magnetic layer, the exchange coupling layer comprising an oxide; and a magnetic cap layer formed above the exchange coupling layer. A method according to one embodiment includes forming a high Ku first oxide magnetic layer above a substrate by sputtering; forming a low Ku second oxide magnetic layer above the first oxide magnetic layer by sputtering; forming an exchange coupling layer of CoCrPt-oxide above the second oxide magnetic layer; and forming a magnetic cap layer above the exchange coupling layer. Additional systems and methods are also presented.Type: GrantFiled: December 15, 2009Date of Patent: May 1, 2012Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Xiaoping Bian, Jack Jyh-Kau Chang, Qing Dai, Hoa V. Do, Yoshihiro Ikeda, Kentaro Takano, Chu S. Tran
-
Patent number: 8149548Abstract: Embodiments of the present invention provide a magnetic head having a read head of stable reading operation and with less magnetic fluctuation noise. According to one embodiment, a free layer has a structure comprising two ferromagnetic layers (a first free layer and a second free layer) that are coupled anti-ferromagnetically by way of a non-magnetic intermediate layer, in which the magnetization amount of the first free layer is set to larger than the magnetization amount of the second free layer. Further, the magnetic domains in the first free layer and the second free layer are stabilized simultaneously by increasing the distance between the second free layer and the magnetic domain control film to be more than the distance between the first free layer and the magnetic domain control film, thereby adjusting the magnetization amount of the magnetic domain control film.Type: GrantFiled: April 17, 2009Date of Patent: April 3, 2012Assignee: Hitachi Global Storage Technologies Netherlands BVInventors: Masahiko Hatatani, Katsuro Watanabe, Nubuo Yoshida, Katsumi Hoshino
-
Patent number: 8147994Abstract: A layered structure includes an amorphous Ta layer, a metallic oxide layer formed from zinc oxide (ZnO) or magnesium oxide (MgO) on the Ta layer, and a FePt magnetic layer formed on the metallic oxide layer. Therefore, an L10 structural FePt ordered alloy is obtained at a temperature of 300° C. or lower.Type: GrantFiled: February 26, 2009Date of Patent: April 3, 2012Assignee: TDK CorporationInventors: Hironobu Matsuzawa, Tsutomu Chou