Patents Examined by Khanh Tuan Nguyen
  • Patent number: 8685289
    Abstract: The present invention relates to pulverulent compounds of the formula LiaNibM1cM2d(O)2(SO4)x, a process for preparation thereof and the use thereof as active electrode material in.
    Type: Grant
    Filed: October 11, 2007
    Date of Patent: April 1, 2014
    Assignee: Toda Kogyo Europe GmbH
    Inventors: Stefan Malcus, Sven Albrecht
  • Patent number: 8679369
    Abstract: Disclosed is a method for prediction of a film material such as a raw material for organic EL. In the method, a film material having an evaporation rate (V(%)) represented by the formula below can be predicted based on the values of the constant (Ko) and the activation energy (Ea). V=(Ko/P)×e?Ea/kT wherein Ko represents a constant (%·Torr), P represents a pressure (Torr), Ea represents an activation energy (eV), k represents a Boltzmann constant, and T represents an absolute temperature.
    Type: Grant
    Filed: July 23, 2012
    Date of Patent: March 25, 2014
    Assignee: Tohoku University
    Inventors: Tadahiro Ohmi, Shozo Nakayama, Hironori Ito
  • Patent number: 8679370
    Abstract: A conductive coating is described, suitable for coating a developer, charge or transfer roller in a developing apparatus to give a charge providing layer. The coating comprises a conductive polymer in a matrix. A roller is also described, suitable for a developing apparatus comprising, from the center to the periphery, a conductive mandrel, a conductive elastic base layer and a charge providing layer.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: March 25, 2014
    Assignee: Ten Cate Enbi International B.V.
    Inventors: John Jansen, Tsuyoshi Tokiwa, Eiji Sawa
  • Patent number: 8673171
    Abstract: Disclosed is a cathode for secondary batteries comprising a compound having a transition metal layer containing lithium as at least one compound selected from the following formula 1: (1?x)Li(LiyM1-y-zMaz)O2-bAb*xLi3PO4 (1) wherein M is an element stable for a six-coordination structure, which is at least one selected from transition metals that belong to first and second period elements; Ma is a metal or non-metal element stable for a six-coordination structure; A is at least one selected from the group consisting of halogen, sulfur, chalcogenide compounds and nitrogen; 0<x<0.1; 0<y<0.3; 0?z<0.2; and 0?b<0.1.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: March 18, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Sung-Kyun Chang, Jinhyung Lim, DongHun Lee, Hong Kyu Park, Su-Min Park
  • Patent number: 8673170
    Abstract: The invention relates to a LiaNixCoyMzO2±eAf composite oxide for use as a cathode material in a rechargeable battery, with a non-homogenous Ni/Al ratio in the particles, allowing excellent power and safety properties when used as positive electrode material in Li battery. More particularly, in the formula 0.9<a<1.1, 0.3?x?0.9, 0?y?0.4, 0<z?0.35, e=0, 0?f?0.05 and 0.9<(x+y+z+f)<1.1; M consists of either one or more elements from the group Al, Mg and Ti; A consists of either one or more elements from the group S and C. The powder has a particle size distribution defining a D10, D50 and D90; and said x and z parameters varying with the particles size of said powder, and is characterized in that either one or both of: x1?x2?0.010 and z2?z1?0.010; x1 and z1 being the parameters corresponding to particles having a particle size D90; and x2 and z2 being the parameters corresponding to particles having a particle size D10.
    Type: Grant
    Filed: January 29, 2010
    Date of Patent: March 18, 2014
    Assignee: Umicore
    Inventors: Stephane Levasseur, Philippe Carlach, Randy De Palma, Michèle Van Thournout
  • Patent number: 8668847
    Abstract: A conductive paste including a conductive powder, a metallic glass, and an organic vehicle, wherein the metallic glass includes an alloy of at least two elements selected from an element having a low resistivity, an element which forms a solid solution with the conductive powder, or an element having a high oxidation potential, wherein the element having a low resistivity has a resistivity of less than about 100 microohm-centimeters, and the element having a high oxidation potential has an absolute value of a Gibbs free energy of oxide formation of about 100 kiloJoules per mole or greater.
    Type: Grant
    Filed: August 12, 2011
    Date of Patent: March 11, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Se-Yun Kim, Eun-Sung Lee, Sang-Soo Jee, Sang-Mock Lee
  • Patent number: 8658062
    Abstract: The present invention is related to nano-particle compositions, methods of their preparation and applications thereof. The nano-particle compositions include silicon-containing nano-particles, a graphite matrix, carbon nanotubes and an amorphous carbon interface formed between the silicon-containing nano-particles and the graphite matrix.
    Type: Grant
    Filed: September 22, 2009
    Date of Patent: February 25, 2014
    Assignee: University of Pittsburgh—Of the Commonwealth System of Higher Education
    Inventors: Prashant N. Kumta, Moni Kanchan Datta
  • Patent number: 8647533
    Abstract: A composition includes a chemical reaction product defining a first surface and a second surface, characterized in that the chemical reaction product includes a segregated phase domain structure including a plurality of domain structures, wherein at least one of the plurality of domain structures includes at least one domain that extends from a first surface of the chemical reaction product to a second surface of the chemical reaction product. The segregated phase domain structure includes a segregated phase domain array. The plurality of domain structures includes i) a copper rich. indium/gallium deficient Cu(In,Ga)Se2 domain and ii) a copper deficient, indium/gallium rich Cu(In,Ga)Se2 domain.
    Type: Grant
    Filed: June 22, 2012
    Date of Patent: February 11, 2014
    Assignee: HelioVolt Corporation
    Inventor: Billy J. Stanbery
  • Patent number: 8647537
    Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.
    Type: Grant
    Filed: September 14, 2009
    Date of Patent: February 11, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Futoshi Utsuno, Kazuyoshi Inoue, Hirokazu Kawashima, Masashi Kasami, Koki Yano, Kota Terai
  • Patent number: 8641927
    Abstract: A conductive paste including a combination of: a conductive powder, a metallic glass, and a dispersing agent represented by the following Chemical Formula 1 R1-L1-(OR2)n—(OR3)m—O-L2-COOH.??Chemical Formula 1 In Chemical Formula 1, R1 is a substituted or unsubstituted C5 to C30 branched alkyl group, R2 and R3 are each independently a substituted or unsubstituted C2 to C5 alkylene group, L1 is a substituted or unsubstituted C6 to C30 arylene group, L2 is a single bond or a C1 to C4 alkylene group, n and m are each independently integers ranging from 0 to about 30, and 3?n+m?30.
    Type: Grant
    Filed: March 15, 2011
    Date of Patent: February 4, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-Soo Jee, Eun-Sung Lee, Se-Yun Kim, Sang-Mock Lee, Seung Yeon Lee
  • Patent number: 8641930
    Abstract: A sputtering target including oxide A shown below and indium oxide (In2O3) having a bixbyite crystal structure: Oxide A: an oxide which includes an indium element (In), a gallium element (Ga) and a zinc element (Zn) in which diffraction peaks are observed at positions corresponding to incident angles (2?) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuK? rays).
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: February 4, 2014
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Koki Yano, Masayuki Itose, Mami Nishimura
  • Patent number: 8632694
    Abstract: Disclosed is a cathode active material for secondary batteries comprising, a compound having a transition metal layer containing lithium as at least one compound selected from the following Formula 1: Li(Li3x±yM1?yPx)O2+z (1) wherein M is an element stable for a six-coordination structure, which is at least one selected from transition metals that belong to the first and second period elements; 0<x<0.1; 0<y<0.3; ?4x<z?4x; and 3x>y is satisfied in a case of 3x?y.
    Type: Grant
    Filed: June 27, 2012
    Date of Patent: January 21, 2014
    Assignee: LG Chem, Ltd.
    Inventors: Sung-Kyun Chang, DongHun Lee, HoSuk Shin, Hong Kyu Park, JiEun Lee
  • Patent number: 8628691
    Abstract: A nanocomposite thermoelectric conversion material includes a matrix of the thermoelectric conversion material; and a dispersed material that is dispersed in the matrix of the thermoelectric conversion material, and that is in a form of nanoparticles. Roughness of an interface between the matrix of the thermoelectric conversion material and the nanoparticles of the dispersed material is equal to or larger than 0.1 nm.
    Type: Grant
    Filed: October 9, 2009
    Date of Patent: January 14, 2014
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Junya Murai, Takuji Kita
  • Patent number: 8617433
    Abstract: A conductive sintered oxide including: a first crystal phase represented by RE14Al2O9 and a second crystal phase having a perovskite structure represented by (RE21-cSLc)(AlxM1y)O3. RE1 is a first element group consisting of Yb and/or Lu and at least one element selected from Group IIIA elements excluding Yb, Lu and La. RE2 is a second element group consisting of at least one element selected from Group IIIA elements excluding La and including at least one of the elements constituting the first element group RE1. SL is an element group consisting of at least one of Sr, Ca and Mg and which includes Sr as a main element, and M1 is an element group consisting of at least one element selected from Groups IVA, VA, VIA, VIIA and VIII excluding Cr. The coefficient c is in the range of 0.18<c<0.50, and the coefficients x and y are in the range of 0.95?x+y?1.1.
    Type: Grant
    Filed: August 16, 2011
    Date of Patent: December 31, 2013
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Hiroshi Watanabe, Yasayuki Okimura, Shinji Ban, Takeshi Mitsuoka
  • Patent number: 8617432
    Abstract: A sintered electroconductive oxide forming a thermistor element has a first crystal phase having a composition represented by RE14Al2O9 and a second crystal phase having a perovskite structure represented by (RE21-aSLa)MO3. The factor a of the second crystal phase is: 0.18<a<0.50, wherein RE1 represents at least one of Yb and Lu and at least one species selected from among group 3A elements excluding Yb, Lu, and La; RE2 represents at least one species selected from among group 3A elements excluding La and which contains at least one species selected from the group RE1; M represents Al and at least one species selected from group 4A to 7A, and 8 elements; and SL represents Sr, Ca, and Mg, with at least Sr being included at a predominant proportion by mole.
    Type: Grant
    Filed: February 18, 2010
    Date of Patent: December 31, 2013
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Yasuyuki Okimura, Shinji Ban, Hiroshi Watanbe, Takeshi Mitsuoka
  • Patent number: 8591765
    Abstract: The present invention provides a negative electrode material for a nonaqueous electrolyte secondary battery which can improve the cycle properties of a lithium ion secondary battery and a method for manufacturing the negative electrode material. The negative electrode material comprises at least two types of powdery alloy materials A and B in which powdery alloy material A contains Co, Sn, and Fe and does not contain Ti and powdery alloy material B contains Fe, Ti, and Sn, and the proportion of the mass of powdery alloy material B to the sum of the mass of powdery alloy material A and the mass of powdery alloy material B is at least 10 mass % and at most 30 mass %.
    Type: Grant
    Filed: June 25, 2012
    Date of Patent: November 26, 2013
    Assignees: Nippon Steel & Sumitomo Metal Corporation, Chuo Denki Kogyo Co., Ltd.
    Inventors: Noriyuki Negi, Tatsuo Nagata, Akihiko Saguchi
  • Patent number: 8585937
    Abstract: A method for forming an embedded passive device module comprises depositing a first amount of an alkali silicate material, co-depositing an amount of embedded passive device material with the amount of alkali silicate material; and thermally processing the amount of alkali silicate material and the amount of embedded passive device material at a temperature sufficient to cure the amount of alkali silicate material and the amount of embedded passive device material and form a substantially moisture free substrate.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: November 19, 2013
    Assignee: Rockwell Collins, Inc.
    Inventors: Nathan P. Lower, Ross K. Wilcoxon, Alan P. Boone, Nathaniel P. Wyckoff, Brandon C. Hamilton
  • Patent number: 8580157
    Abstract: The sulfide has the following composition, and the photoelectric element uses the sulfide. (1) The sulfide contains Cu, Zn, and Sn as a principal component. (2) When x is a ratio of Cu/(Zn+Sn), y is a ratio of Zn/Sn (x and y being atomic ratios), and the composition of the sulfide is represented by the (x, y) coordinates, with the points A=(0.78, 1.32), B=(0.86, 1.32), C=(0.86, 1.28), D=(0.90, 1.23), E=(0.90, 1.18), and F=(0.78, 1.28), the composition (x, y) of the sulfide is on any one of respective straight lines connecting the points A?B?C?D?E?F?A in that order, or within an area enclosed by the respective straight lines.
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: November 12, 2013
    Assignees: Kabushiki Kaisha Toyota Chuo Kenkyusho, Institute of National Colleges of Technology, Japan
    Inventors: Tatsuo Fukano, Tomoyoshi Motohiro, Hironori Katagiri
  • Patent number: 8580158
    Abstract: Some embodiments include methods of removing silicon dioxide in which the silicon dioxide is exposed to a mixture that includes activated hydrogen and at least one primary, secondary, tertiary or quaternary ammonium halide. The mixture may also include one or more of thallium, BX3 and PQ3, where X and Q are halides. Some embodiments include methods of selectively etching undoped silicon dioxide relative to doped silicon dioxide, in which thallium is incorporated into the doped silicon dioxide prior to the etching. Some embodiments include compositions of matter containing silicon dioxide doped with thallium to a concentration of from about 1 weight % to about 10 weight %.
    Type: Grant
    Filed: June 22, 2012
    Date of Patent: November 12, 2013
    Assignee: Micron Technology, Inc.
    Inventor: Nishant Sinha
  • Patent number: 8574361
    Abstract: A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.
    Type: Grant
    Filed: March 5, 2008
    Date of Patent: November 5, 2013
    Assignee: Ricoh Company, Ltd.
    Inventors: Osamu Yamada, Hisashi Minemoto, Kouichi Hiranaka, Takeshi Hatakeyama, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura, Yasuo Kitaoka