Abstract: A switch circuit (10) includes: a transistor (T1) switching the conductivity state between a drain terminal (D1) and a source terminal (S1) between being conductive and non-conductive; a transistor (T2) switching the conductivity state between a drain terminal (D2) and a source terminal (S2) between being conductive and non-conductive, the source terminals (S1) and (S2) being connected to a node (N1) and an input/output terminal (120), respectively, and the drain terminals (D1) and (D2) being connected to an input/output terminal (110) and the node (N1) respectively; a transistor (T3) switching the conductivity state between a drain terminal (D3) and a source terminal (S3) between being conductive and non-conductive, the drain terminal (D3) and the source terminal (S3) being arranged along a second path connecting the node (N1) and ground; and a capacitor (C1) placed in the second path and connected in series to the transistor (T3).

Abstract: An aspect includes a filtering method including operating a first filter to filter a first input signal to generate a first output signal; operating a second filter to filter a second input signal to generate a second output signal; and selectively coupling at least a portion of the second filter with the first filter to filter a third input signal to generate a third output signal. Another aspect includes a filtering method including operating switching devices to configure a filter with a first set of pole(s); filtering a first input signal to generate a first output signal with the filter configured with the first set of pole(s); operating the switching devices to configure the filter with a second set of poles; and filtering a second input signal to generate a second output signal with the filter configured with the second set of poles.

Abstract: Provided is an organic light-emitting diode display substrate, including: a source/drain layer, a planarization layer and an anode layer which are laminated in sequence, wherein the source/drain layer includes at least one pair of first signal lines; the anode layer includes a common power line, wherein the common power line is provided with vent holes; overlapping areas between two first signal lines in each pair of the first signal lines and a projection pattern of the vent hole are equal, the overlapping area being greater than 0, wherein the projection pattern of the vent hole is a pattern of an orthographic projection of the vent hole in the common power line on the source/drain layer. A display panel and a display device are also provided.

Abstract: A semiconductor device includes a semiconductor layer having a first surface, an insulating layer formed at the first surface of the semiconductor layer, a Cu conductive layer formed on the insulating layer, the Cu conductive layer made of a metal mainly containing Cu, a second insulating layer formed on the insulating layer, the second insulating layer covering the Cu conductive layer, a Cu pillar extending in a thickness direction in the second insulating layer, the Cu pillar made of a metal mainly containing Cu and electrically connected to the Cu conductive layer, and an intermediate layer formed between the Cu conductive layer and the Cu pillar, the intermediate layer made of a material having a linear expansion coefficient smaller than a linear expansion coefficient of the Cu conductive layer and smaller than a linear expansion coefficient of the Cu pillar.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate and a bridge substrate embedded in the package substrate. In an embodiment, first pads are over the package substrate, where the first pads have a first pitch, and second pads are over the bridge substrate, where the second pads have a second pitch that is smaller than the first pitch. In an embodiment, a barrier layer is over individual ones of the second pads. In an embodiment, reflown solder is over individual ones of the first pads and over individual ones of the second pads. In an embodiment, a first standoff height of the reflown solder over the first pads is equal to a second standoff height of the reflown solder over the second pads.

Abstract: An electronic component includes: a first lead frame; a second lead frame that is provided on the first lead frame; a first electronic component that is provided between the first lead frame and the second lead frame; a connection member that is provided between the first lead frame and the second lead frame; and an insulating resin that is filled between the first lead frame and the second lead frame so as to cover the first electronic component and the connection member. A first oxide film is provided on a surface of the first lead frame. A second oxide film is provided on a surface of the second lead frame. The first lead frame and the second lead frame are electrically connected to each other by the connection member.

Abstract: The signal processing device includes: an offset adjuster; an amplitude adjuster; and a delay adjuster, wherein the offset adjuster adjusts the DC offset using a first parameter regarding the DC offset determined based on an output of the offset adjuster which is output when no signal is input to the signal processing circuit by the subtractor, the amplitude adjuster adjusts the amplitude using a second parameter regarding the amplitude determined based on (i) an output of the amplitude adjuster which is output when a first test signal is input to the signal processing circuit and (ii) the first test signal, and the delay adjuster adjusts the delay using a third parameter regarding the delay determined based on the difference signal that is an output of the subtractor when a second test signal is input to the signal processing circuit.

Abstract: Described are concepts, circuits, systems and techniques directed toward N-phase control techniques useful in the design and control of supply generators configured for use in a wide variety of power management applications including, but not limited to mobile applications.

Abstract: Methods related to power amplification systems with adjustable common base bias. A method of implementing a power amplification system can include providing a cascode amplifier coupled to a radio-frequency input signal and coupled to a radio-frequency output. The method can further include providing a biasing component configured to apply one or more biasing signals to the cascode amplifier, the biasing component including a bias controller and one or more bias components. Each respective bias component may be coupled to a respective bias transistor.

Abstract: A gain adjustment unit constituted by a distribution switch having a control terminal is provided in an input unit of an amplifier circuit. One end of a coupler is connected to an output line of the amplifier circuit, another end of the coupler is connected to an anode of a diode, and a monitor terminal is connected via a low-pass filter to a cathode of the diode. The anode of the diode is unbiased.

Abstract: The amplifier includes an input circuit configured to convert an input signal into a current; an output circuit comprising at least one switching element for reducing a voltage change of an output end of the input circuit and configured to provide an output signal; and a biasing circuit connected to the at least one switching element to form a feedback loop for reducing the voltage change of the output end of the input circuit.

Abstract: A digital predistortion (DPD) system includes an input configured to receive an input signal. In some examples, a first signal path configured to generate a first signal based on the input signal. In some examples, an error model provider configured to generate an error model signal modeled after a gate bias error voltage associated with the DPD system. In some examples, a first combiner configured to combine the first signal and the error model signal to generate a first intermediate signal, and the DPD system generates an output signal based at least on the first intermediate signal.

Abstract: An amplifier includes an input circuit, an amplification circuit, and at least two feedback circuits. The input circuit is connected with an input end of the amplification circuit; an output end of the amplification circuit is connected with a first end of each of the feedback circuits respectively; a second end of each of the feedback circuits is connected with the input circuit respectively. The input circuit is configured to receive an input signal and a feedback signal; the amplification circuit is configured to amplify the input signal and the feedback signal to obtain an amplified signal. The feedback signal is fed back to the input circuit by feeding back at least a part of the amplified signal through a target feedback circuit; and the target feedback circuit is a feedback circuit that depends on the type of the input signal of the at least two feedback circuits.

Abstract: An impedance adjustment circuit is connected in parallel with a bias current output end of a bias circuit. The bias circuit is configured to provide bias current to a first circuit unit. The impedance adjustment circuit is configured to adjust source impedance of the first circuit unit.

Abstract: In an embodiment, a device includes: a first device including: an integrated circuit device having a first connector; a first photosensitive adhesive layer on the integrated circuit device; and a first conductive layer on the first connector, the first photosensitive adhesive layer surrounding the first conductive layer; a second device including: an interposer having a second connector; a second photosensitive adhesive layer on the interposer, the second photosensitive adhesive layer physically connected to the first photosensitive adhesive layer; and a second conductive layer on the second connector, the second photosensitive adhesive layer surrounding the second conductive layer; and a conductive connector bonding the first and second conductive layers, the conductive connector surrounded by an air gap.

Abstract: An integrated circuit (IC) package with an embedded heat spreader in a redistribution layer (RDL) is provided. IC packaging facilitates a high density package for ICs, including monolithic microwave integrated circuits (MMICs). However, IC packaging may result in reduced heat removal from an IC, decreasing radio frequency (RF) circuit performance. In an exemplary aspect, an IC package is provided which incorporates an embedded heat spreader within a dielectric layer of an RDL coupled to an IC die. The embedded heat spreader provides efficient heat transfer, robust RF performance, and operation through millimeter wave (mmW) frequencies, all in a miniature low-cost, low-profile surface mountable (SM) package.

Abstract: Methods and systems for optimizing amplifier operations are described. The described methods and systems particularly describe a feed-forward control circuit that may also be used as a feed-back control circuit in certain applications. The feed-forward control circuit provides a control signal that may be used to configure an amplifier in a variety of ways.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: The present disclosure relates to a radio frequency device and a process for making the same. According to the process, a precursor wafer, which includes device regions, individual interfacial layers formed of SiGe, and a silicon handle substrate, is first provided. Each individual interfacial layer is over an active layer of a corresponding device region, and the silicon handle substrate is over each individual interfacial layer. A first bonding layer is formed underneath the precursor wafer. The precursor wafer is then attached to a support carrier with a second bonding layer. The first bonding layer and the second bonding layer merge to form a bonding structure between the precursor wafer and the support carrier. Next, the silicon handle substrate is removed from the precursor wafer to provide an etched wafer, and a first mold compound is applied to the etched wafer to provide a mold device wafer.

Abstract: A memory may include a first wafer, and a second wafer stacked on and bonded to the first wafer. The first wafer may include a cell structure including a memory cell array; and a first logic structure disposed under the cell structure, and including a row control circuit. The second wafer may include a second logic structure including a column control circuit.