Abstract: A semiconductor device includes semiconductor layers of a first conductivity-type and a second conductivity-type stacked on a silicon carbide semiconductor and having differing impurity concentrations. Trenches disposed penetrating the semiconductor layer of the second conductivity-type form a planar striped pattern; and a gate electrode is disposed therein through a gate insulation film. First and second semiconductor regions respectively of the first and the second conductivity-types have impurity concentrations exceeding that of the semiconductor layer of the second conductivity-type and are selectively disposed therein. The depth of the second semiconductor region exceeds that of the semiconductor layer of the second conductivity-type, but not that of the trenches. The second semiconductor region is arranged at given intervals along the length of the trenches.

Abstract: A light-emitting device of little aging electric leakage and high luminous efficiency and fabrication thereof, in which, the light-emitting device includes: a semiconductor epitaxial laminated layer that comprises an N-type semiconductor layer, a P-type semiconductor layer and a light-emitting layer between the N-type semiconductor layer and the P-type semiconductor layer, the surface of which has deflected dislocation; electromigration resistant metal that fills into the deflected dislocation over the N-type or/and P-type semiconductor layer surface through pretreatment to block the electromigration channel formed over the semiconductor epitaxial laminated layer due to deflected dislocation to eliminate electric leakage.

Abstract: A silicon carbide (SiC) semiconductor device having a metal oxide semiconductor field effect transistor (MOSFET) and integrated with an anti-parallelly connected Schottky diode includes: a substrate, an n-drift layer, a plurality of doped regions, a gate dielectric layer, a gate electrode, an inter-layer dielectric layer, a plurality of source openings, a plurality of junction openings, a plurality of gate openings, a first metal layer and a second metal layer. The second metal layer at the junction openings forms the Schottky diode.

Abstract: EL display has a luminescence unit having a luminescence layer being disposed between a pair of electrodes and a thin film transistor array unit controlling luminescence of the luminescence unit. An interlayer insulation film is disposed between the luminescence unit and the transistor array unit. An anode of the luminescence unit is connected electrically to the thin film transistor array via a contact hole of the interlayer insulation film. The thin film transistor array further has a current supplying relaying electrode that is connected to the anode of the luminescence unit via the contact hole of the interlayer insulation film. A diffusion prevention film is formed on the boundary face of the anode of the luminescence unit and the relaying electrode.

Abstract: In a structure including a gallium nitride-based semiconductor having an m-plane as a principal plane, and a metal layer provided on the principal plane, the principal plane has an n-type conductivity. An interface between the gallium nitride-based semiconductor and the metal layer contains oxygen. The metal layer includes a crystal grain extending form a lower surface to an upper surface of the metal layer.

Abstract: A semiconductor device includes a terminal case, a beam portion which has elasticity and is connected to the terminal case, divided insulating substrates with a conductive pattern, a fastener which is disposed at the center of the terminal case, and an elastic sealing resin which fills the terminal case.

Abstract: A light emitting diode includes: a substrate; a light-emitting epitaxial layer, from bottom to up, laminated by semiconductor material layers of a first confinement layer, a light-emitting layer and a second confinement layer over the substrate; a current blocking layer over partial region of the light-emitting epitaxial layer; a transparent conducting structure over the current blocking layer that extends to the light-emitting epitaxial layer surface and is divided into a light-emitting region and a non-light-emitting region, in which, the non-light-emitting region corresponds to the current blocking layer with thickness larger than that of the light-emitting region, thus forming a good ohmic contact between this structure and the light-emitting epitaxial layer and reducing light absorption; and a P electrode over the non-light-emitting region of the transparent conducting structure, which guarantees current spreading performance and reduces working voltage and light absorption.

Abstract: A light emitting diode includes: a substrate of front and back main surfaces; a V-shaped groove, which has a reflecting surface, formed over front surface of the conductive substrate; a light-emitting epitaxial layer, the margin of which has its vertical projection between the bottom and the inner margin of the V-shaped groove, formed over the substrate, so that light emitted from the light-emitting epitaxial layer margin is incident to the mirror surface of the V-shaped groove and emits outwards. This structure can effectively improve extraction efficiency of device and control path of light at peripheral region of the light-emitting epitaxial layer.

Abstract: A p-type thin-layer along a side wall surface of a V-shaped groove reaching the bottom portion of a p-type isolation layer from the back surface of an n? semiconductor substrate, couples a p-type collector layer with the p-type isolation layer. A collector electrode contacts the surfaces of the p-type collector layer and the p-type thin-layer. The collector electrode is formed by laminating an Al—Si film, a barrier layer, a nickel-based metal film, and a gold-based metal film in sequence from the n? semiconductor substrate side. The Al—Si film contacting the surface of the p-type collector layer is in a range of 1.1 to 3.0 ?m in thickness. The Al—Si film contacting the surface of the p-type thin-layer is in a range of 0.55 to 1.5 ?m in thickness. A rise in leak current caused by aluminum spiking is eliminated or suppressed, and solder joining including tin is made easier.