Abstract: UV laser devices, systems, and methods are shown and/or described herein. Included are a method, device or system for VECSEL and MECSEL lasers including both barrier-pumped and in-well pumped lasers. Also disclosed is a method of manufacturing gain chips for use in the lasers, arrangements of lasers, and selection of proper non-linear crystal (NLC) for use in the device.

Abstract: The invention relates to an optoelectronic component comprising a housing, an optoelectronic semiconductor chip and an optical element. The housing comprises a lead frame which has two external electrical contact points and two contact portions. The housing also comprises a housing body in which the lead frame is embedded, wherein each contact portion extends laterally out of one of the external electrical contact points in each case to a mounting surface of the housing, and therefore contact surfaces of the contact portions are exposed on the mounting surface. An electrical contact structure of the optical element is electrically conductively connected to the contact surfaces of the contact portions.

Abstract: A coherent beam combination (CBC) system (10) includes an array of beam sources (12a, 12b and 12c) generating coherent beams directed towards a target (T). The phase modulators (14a, 14b and 14c) allow adjustment of relative phase offsets of the beams. A detector (16) monitors an intensity of the radiation impinging on an area of the target (T). A controller (18) receives the intensity parameter and controls a phase adjustment of the beams according to a deterministic (i.e., quantitative) measurement of a phase offset of each beam relative to a representative phase of the sum of all the other beams. This is achieved by using interferometric techniques, referred to herein as Target In-the-Loop Interferometry (TILI).

Abstract: A heat sink assembly may include an alignment body with an opening configured to receive a crystal rod, wherein the opening is configured to maintain a crystalline orientation of the crystal rod relative to a physical orientation of the alignment body. The heat sink assembly may include a first cooling stack, wherein the first cooling stack includes a first cutout to receive the crystal rod and the alignment body. The heat sink assembly may include a second cooling stack, wherein the second cooling stack includes a second cutout to receive the crystal rod and the alignment body, and wherein the first cooling stack and the second cooling stack are configured to mate and at least partially sandwich the crystal rod and the alignment body.

Abstract: In a semiconductor laser drive device, a wiring inductance in electrically connecting a semiconductor laser and a laser driver is reduced. The semiconductor laser drive device includes a substrate, the laser driver, and the semiconductor laser. The laser driver is built in the substrate. The semiconductor laser is mounted on one surface of the substrate of the semiconductor laser drive device. Connection wiring electrically connects the laser driver and the semiconductor laser by a wiring inductance of 0.5 nanohenries or less.

Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a first set of epitaxial layers for a bottom-emitting VCSEL disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers for a top-emitting VCSEL disposed on the first set of epitaxial layers for the bottom-emitting VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The top-emitting VCSEL and the bottom-emitting VCSEL may be configured to emit light in opposite light emission directions.

Abstract: There is provided a semiconductor device that comprises a layered structure configured by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The semiconductor device further includes a substrate, a first light reflecting layer arranged on the first surface side of the first compound semiconductor layer, and a second light reflecting layer arranged on the second surface side of the second compound semiconductor layer. Further, the second light reflecting layer has a flat shape, a concave surface portion is formed on a substrate surface, the first light reflecting layer is formed on at least the concave surface portion, the first compound semiconductor layer is formed to extend from the substrate surface onto the concave surface portion, and a cavity is present between the first light reflecting layer and the first compound semiconductor layer.

Abstract: An optical module includes: amounting substrate; a support block on which the mounting substrate is mounted; and a stem having a support surface to support the support block, the stem having a pedestal portion with a tip face in a protruding direction and with an upper surface spreading along the protruding direction; a relay board on the upper surface; a connection block fixed to the tip face; and wires connecting the support block and the mounting substrate to the connection block. The connection block has a surface made of a conductor. The connection block has a first bonding surface facing the same direction as the tip face of the pedestal portion and a second bonding surface facing the same direction as the upper surface. The wires include first and second wires having their ends bonded to the first and second bonding surface, respectively.

Abstract: A vertical-cavity surface-emitting laser includes a substrate having a main surface, a first lower distributed Bragg reflector that extends to an edge of the main surface, a III-V compound semiconductor layer disposed on the first lower distributed Bragg reflector, a second lower distributed Bragg reflector disposed on the III-V compound semiconductor layer, an active layer disposed above the second lower distributed Bragg reflector and an upper distributed Bragg reflector disposed on the active layer. The first lower distributed Bragg reflector includes a first layer and a second layer that are alternately arranged. The upper distributed Bragg reflector includes a third layer and a fourth layer that are alternately arranged. The III-V compound semiconductor layer is free of aluminum or has an aluminum composition less than an aluminum composition of the third layer. The first layer has an aluminum composition greater than the aluminum composition of the third layer.

Abstract: Configurations for an edge-generated vertical emission laser that vertically emits light and fabrication methods of the edge-generated vertical emission laser are disclosed. The edge-generated vertical emission laser may include a distributed feedback (DFB) laser structure, a grating coupler, and contact layers. Light may propagate through the DFB laser structure, approximately parallel to the top surface of the edge-generated vertical emission laser and be directed by the grating coupler toward the top surface of the edge-generated vertical emission laser. The light may vertically emit from the edge-generated vertical emission laser approximately perpendicular to the top surface of the edge-generated vertical emission laser. Additionally, the contact layers may be n-metal and p-metal, which may be located on the same side of the edge-generated vertical emission laser. These features of the edge-generated vertical emission laser may facilitate ease of testing and increased options for packaging.

Abstract: In embodiments, a system for scanning an intraoral cavity comprises an intraoral scanner to generate topographical scan data of the intraoral cavity and 2D image data of the intraoral cavity, and a processing unit operatively connected to the intraoral scanner. The processing unit is to: receive the topographical scan data and the 2D image data from the intraoral scanner; generate a 3D digital model of the intraoral cavity using the intraoral scan data; output the 3D digital model to a display; determine which portions of the intraoral cavity have been scanned; generate a visual indicator that provides guidance for positioning and orienting the field of view of the intraoral scanner; and output the visual indicator to the display.

Abstract: An optical parametric device (OPD), which is selected from an optical parametric oscillator (OPO) or optical parametric generator (OPG), is configured with a nonlinear optical element (NOE) which converts an incoupled pump radiation at first frequency into output signal and idler radiations at one second frequency or different second frequencies, which is/are lower than the first frequency, by utilizing nonlinear interaction via a random quasi-phase matching process (RQPM-NOE). The NOE is made from a nonlinear optical material selected from optical ceramics, polycrystals, micro and nanocrystals, colloids of micro and nanocrystals, and composites of micro and nanocrystals in polymer or glassy matrices. The nonlinear optical material is prepared by modifying a microstructure of the initial sample of the NOE such that an average grain size is of the order of a coherence length of the three-wave interaction which enables the highest parametric gain achievable via the RQPM process.

Abstract: Consistent with the present disclosure, a compact laser with extended tunability (CLET) is provided that includes multiple segments or sections, at least one of which is curved, bent or non-collinear with other segments, so that the CLET has a compact form factor either as a singular laser or when integrated with other devices. The term CLET, as used herein, refers to any of the laser configurations disclosed herein having mirrors and a bent, angled or curved part, portion or section between such mirrors. If bent, the bent portion is preferably oriented at an angle of at least 30 degrees relative to other portions of the CLET. Alternatively, the curve or bend portion may be distributed over different sections of the CLET over a series of arcs, for example. The waveguide extending between the mirrors is continuous, such that light propagating along the waveguide is not divided or split. The waveguide also constitutes a continuous waveguide path.

Abstract: A laser apparatus includes: one or more laser diodes and two or more optical combiners. Further, output sides of the one or more laser diodes are connected to an input side of one optical combiner among the two or more optical combiners, and an output side of the one optical combiner is connected to an input side of an optical combiner other than the one optical combiner.

Abstract: A laser apparatus includes: a laser oscillator that includes a mirror and emits a laser beam; and an external resonator that includes a nonlinear optical crystal that functions as a phase conjugate mirror. The phase conjugate mirror reflects the laser beam and produces a phase conjugate wave that reaches the mirror of the laser oscillator, and the mirror of the laser oscillator and the phase conjugate mirror cause laser oscillation such that a wavelength and a phase of the laser beam oscillated by the laser oscillation are automatically fixed.

Abstract: A laser module includes a base, a carrier mounted on the base, a laser diode mounted on the carrier, an organic adhesive layer provided between the laser diode and the carrier, the organic adhesive layer having an exposed portion exposed between the laser diode and the carrier, a cap fixed to the base, the cap covering the carrier, the laser diode, and the organic adhesive layer, and a cover material covering at least a part of the exposed portion of the organic adhesive layer.

Abstract: An integral optical resonant cavity for frequency conversion is provided. The integral optical resonant cavity includes: a housing, a cavity-length adjustment device, a temperature control device and a nonlinear crystal provided in the temperature control device; a first plano-concave mirror and a second plano-concave mirror included in the cavity-length adjustment device and a nonlinear crystal form the optical resonant cavity; and light passes through the first plano-concave mirror, the nonlinear crystal and the second plano-concave mirror sequentially. The stability of the length of the optical resonant cavity is improved through an integral design thereof, and the stability of the temperature of the nonlinear crystal in the integral optical resonant cavity is improved through the temperature control device, thereby stably controlling relative phases between light fields for the frequency conversion in the resonant cavity.

Abstract: Fiber laser devices, systems, and methods for reducing Raman spectrum in emissions from a resonant cavity. A fiber laser oscillator that is to generate an optical beam may include a Raman reflecting output coupler that strongly reflects a Raman component pumped within the resonant cavity, and partially reflects a signal component to sustain the oscillator and emit a signal that has a reduced Raman component. A Raman filtering output coupler may comprise a superstructure fiber grating, and such a grating may be chirped or otherwise designed to have a desired bandwidth.

Abstract: Embodiments disclosed herein include dual sided cooling architectures for laser packages. In an embodiment, an electronic package comprises a package substrate, and a laser chip attached to the package substrate. In an embodiment, the laser chip has a first surface and a second surface opposite from the first surface. In an embodiment, an interposer is disposed over the laser chip, where the interposer overhangs an edge of the laser chip. In an embodiment, the electronic package further comprises an interconnect between the interposer and the package substrate.

Abstract: In some implementations, an electrical drive circuit may include a first optical load terminal to receive an anode of a first optical load. The electrical drive circuit may include a junction section that includes a first electrical junction and a second optical load terminal to receive a cathode of the first optical load and an anode of a second optical load. The electrical drive circuit may include a third optical load terminal to receive a cathode of the second optical load; a first switch connected between the third optical load terminal and a common ground; a coupling capacitor connected between the first electrical junction and a second electrical junction; a second switch connected between the second electrical junction and the common ground; and an inductor connected from a second branch of the second electrical junction and between the second electrical junction and the common ground.