Abstract: A fiber laser apparatus includes a pump light source that emits pump light; a pump delivery fiber that guides the pump light; an amplifying optical fiber that is optically coupled to the pump delivery fiber and guides laser light; and a filter element that causes more loss of light of a wavelength range that includes a peak wavelength of at least one of Stokes light and anti-Stokes light than the laser light. The Stokes light and anti-Stokes light result from four-wave mixing involving a plurality of guide modes in a multi-mode fiber that guides the laser light. The filter element is disposed between: the pump delivery fiber and the amplifying optical fiber, the amplifying optical fiber and the multi-mode fiber, or at the multi-mode fiber.

Abstract: An array of surface-emitting lasers is provided. The array outputs high brightness in a unipolar way. The array comprises a stress-adjustment unit and a plurality of epitaxial device units. The stress-adjustment unit is used to adjust stress. The stress from a substrate is used to select a laser mode for an aperture unit. The selection of the laser mode is enhanced for the aperture unit without sacrificing driving current. Low current operation is achieved in a single mode for effectively reducing volume and further minimizing the size of the whole array to achieve high-quality laser output. An object can be scanned by the outputted laser to obtain a clear image with a high resolution. Hence, the present invention is applicable for face recognition with high recognition and high security.

Abstract: A multi-junction VCSEL is formed by as a compact structure that reduces lateral current spreading by reducing the spacing between adjacent active regions in the stack of such regions used to from the multi-junction device. At least two of the active regions within the stack are located adjacent peaks of the intensity profile of the VCSEL, with an intervening tunnel junction positioned at a trough between the two peaks. The alignment of the active regions with the peaks maximizes the generated optical power, while the alignment of the tunnel junction with the trough minimizes optical loss. The close spacing on adjacent peaks forms a compact structure (which may even include a cavity having a sub-? optical length) that lessens the total path traveled by carriers and therefore reduces lateral current spread.

Abstract: An optical frequency manipulation using an optical subsystem configured to provide a modulated laser beam for interaction with an atomic sample. The optical system may include: an optical subsystem for producing a light beam, the optical subsystem having a laser source and an IQ modulator, wherein the IQ modulator is operable to modulate light from the laser source at a carrier frequency to produce modulated light having a single sideband at a sideband frequency; and a chamber for containing an atomic sample, wherein the optical subsystem is arranged to direct the light beam towards the chamber to interact with an atomic sample contained therein.

Abstract: Disclosed are photonic particles and methods of using particles in biological samples. The particles are configured to emit laser light when energetically stimulated by, e.g., a pump source. The particles may include a gain medium with inorganic materials, an optical cavity with high refractive index, and a coating with organic materials. The particles may be smaller than 3 microns along their longest axes. The particles may attach to each other to form, e.g., doublets and triplets. The particles may be injection-locked by coupling an injection beam into a particle while pumping so that an injection seed is amplified to develop into laser oscillation. A microscopy system may include a pump source, beam scanner, spectrometer with resolution of less than 1 nanometer and acquisition rate of more than 1 kilohertz, and spectral analyzer configured to distinguish spectral peaks of laser output from broadband background.

Abstract: A control device that can apply a laser oscillator control device to various types of systems. The control device includes an analog signal input unit configured to receive an output control signal for controlling a laser output of the laser oscillator or a mode control signal for controlling an operation mode of the laser oscillator as an analog signal; a digital signal input unit configured to receive the output control signal or the mode control signal as a digital signal; and a controller configured to transmit a laser command for controlling the laser output to the laser oscillator in response to the output control signal received by the analog signal input unit or the digital signal input unit, and transmit an operation command for operating the laser oscillator to the laser oscillator in the operation mode in response to the mode control signal received by the analog signal input unit or the digital signal input unit.

Abstract: A method of generating a light-matter hybrid species of charged polaritons at room temperature includes providing an organic semiconductor microcavity being a doped organic semiconductor sandwiched in a microcavity capable of generating an optical resonance and coupling light to the polaron optical transition in the organic semiconductor microcavity thereby forming polaron-polaritons. The doped organic semiconductor may be a hole/electron transport material having a polaron absorption coefficient exceeding 102 cm?1 and capable of generating a polaron optical transition with a linewidth smaller than a predetermined threshold. The optical resonance of the microcavity has a resonance frequency matched with the polaron optical transition.

Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

Abstract: A microchip laser and a handpiece including the microchip laser. The microchip laser includes a laser medium with input and output facets. The input facet is coated with a highly reflective dielectric coating at microchip laser wavelength and highly transmissive at pump wavelength. The output facet is coated with a partially reflective at microchip laser wavelength dielectric coating. A saturable absorber attached by intermolecular forces to output facet of microchip laser. A handpiece for skin treatment includes the microchip laser.

Abstract: An optical apparatus includes a light emitting device and a substrate. The light emitting device includes a base including a main body portion containing a ceramic material and wire portions exposed from the main body portion on the lower surface of the base, a lid portion fixed to the base so that a hermetically sealed space is defined by the lid portion and the base, a first semiconductor laser element emitting blue light and provided in the hermetically sealed space, a second semiconductor laser element emitting red light and provided in the hermetically sealed space, a third semiconductor laser element emitting green light and provided in the hermetically sealed space, and a collimate lens arranged on paths of the blue light, the red light and the green light. The substrate includes first metallic films electrically connected with the base of the light emitting device via the wire portions.

Abstract: A semiconductor laser according to one embodiment of the present disclosure includes a semiconductor stack. The semiconductor stack includes, in the following order, a first cladding layer, an active layer, one or a plurality of low-concentration impurity layers, a contact layer, and a second cladding layer that includes a transparent conductive material. The semiconductor stack further has, in a portion including the contact layer, a ridge extending in a stacked in-plane direction. Each low-concentration impurity layer has an impurity concentration of 5.0×1017 cm?3 or less, and a total thickness of the low-concentration impurity layer is 250 nm or more and 1000 nm or less. A distance between the second cladding layer and the low-concentration impurity layer closest to the second cladding layer is 150 nm or less.

Abstract: The laser device includes a substrate, a laser element disposed on the substrate for emitting a laser light ray, a light guide member disposed on the substrate, and a wavelength conversion layer. The light guide member is light-transmissible and thermally conductive, and has at least one reflection surface for reflecting the laser light ray from the laser element so as to change travelling direction of the laser light ray. The wavelength conversion layer converts wavelength of the laser light ray from the light guide member to result in a laser beam, and contacts the light guide member so that heat from the wavelength conversion layer is transferred to the substrate through the light guide member.

Abstract: A laser diode and a method for manufacturing a laser diode are disclosed. In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, and wherein the optical element and the semiconductor laser are cohesively connected to each other.

Abstract: A semiconductor laser includes a semiconductor layer including end faces and at least one of the end faces is configured as a light emission end face. The semiconductor layer includes a waveguide and a light window structure region. The waveguide has a first width and is extended between the end faces. The light window structure region includes an opening having a second width greater than the first width arranged along the waveguide and is formed continuously or intermittently from one to another of the end faces.

Abstract: A burst logging system logs and transmits to a local or remote computing system event data related to errors in and or potential failures of laser system components. The system further provides for capturing data at different rates from different sensors, synchronization of data capture associated with system events and the possibility for aggregation of data from multiple systems, which can in turn be leveraged to predict and or remediate future system events.

Abstract: A device for generating laser radiation includes a resonator, an optical assembly, and an adjustment device is provided. The optical assembly includes a movably arranged support element on which optical components are arranged, wherein an optical component is a device for deflecting laser radiation. The device for deflecting laser radiation of the optical assembly is arranged in the beam path of laser radiation generated by the resonator. The adjustment device changes the position of the optical assembly from a first position to another position relative to the resonator, wherein the position of the beam path of laser radiation emanating from the optical assembly in the first position remains unchanged by the adjustment of the optical assembly to the other position relative to the resonator. A corresponding method is also provided.

Abstract: In one aspect, an optical system for delivering light into an optical fiber is disclosed, which comprises a phosphor-converted white light source for generating white light, a red light emitting diode (LED) for generating red light, and a light-delivery system for delivering at least a portion of said white light and said red light into an input port of an optical fiber.

Abstract: A semiconductor laser array may include a plurality of semiconductor lasers and a common substrate configured as a common anode of said plurality of semiconductor lasers. Each semiconductor laser may have a pn junction region between the common anode and a cathode contact layer. The pn junction region may include a p-doped layer and an n-doped layer. The p-doped layer of the pn junction region may face the substrate. The semiconductor laser array circuit arrangement may include a semiconductor laser array, each laser may be controlled by a driver with an n-MOSFET.

Abstract: Chirped pulse amplification (CPA) systems configured to generate and amplify multi-pulses are described. The nonlinear interaction of pulses can generate a multiple pulse pack with a dense time separation between pulses. Reducing or eliminating the nonlinear interaction can be provided by spectrally and/or temporally splitting pulses in the chirped amplification system.

Abstract: A modulation doped semiconductor laser includes a multiple quantum well composed of a plurality of layers including a plurality of first layers and a plurality of second layers stacked alternately and including an acceptor and a donor; a p-type semiconductor layer in contact with an uppermost layer of the plurality of layers; and an n-type semiconductor layer in contact with a lowermost layer of the plurality of layers, the plurality of first layers including the acceptor so that a p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the acceptor so that the p-type carrier concentration is 10% or more and 150% or less of the p-type semiconductor layer, the plurality of second layers containing the donor, and an effective carrier concentration corresponding to a difference between the p-type carrier concentration and an n-type carrier concentration is 10% or less of the p-type carrier concentration of the plurality of second l