Abstract: A surface-emitting quantum cascade laser of an embodiment includes a semiconductor stacked body, an upper electrode, and a lower electrode. The semiconductor stacked body includes an active layer that includes a quantum well layer and emits infrared laser light, a first semiconductor layer that includes a photonic crystal layer in which pit parts constitute a rectangular grating, and a second semiconductor layer. The upper electrode is provided on the first semiconductor layer. The lower electrode is provided on a lower surface of a region of the second semiconductor layer overlapping at least the upper electrode. The photonic crystal layer is provided on the upper surface side of the first semiconductor layer. In plan view, the semiconductor stacked body includes a surface-emitting region including the photonic crystal layer and a current injection region. The upper electrode is provided on the current injection region.

Abstract: A light source device includes: a semiconductor light-emitting device including a flat-shaped base having a first main surface on a first side and a second main surface and a semiconductor light-emitting element disposed on the first side; a first fixing component having a first through-hole and a first pressing surface that presses the first main surface; and a second fixing component having a second through-hole and a second pressing surface that presses the second main surface. The base is fixed between the first and second pressing surfaces by an engagement between a first inner surface surrounding the first through-hole of the first fixing component and a second outer surface of the second fixing component. A distance between the first and second pressing surfaces is smaller than or equal to a thickness of the base, and a void is formed lateral to the base between the first and second pressing surfaces.

Abstract: The invention relates to an AlInGaN alloy based laser diode, which uses a gallium nitride substrate. It also includes a lower cladding layer, a lower light-guiding layer-cladding, a light emitting layer, an upper light-guiding-cladding layer, an upper cladding layer, and a subcontact layer. The lower light-guiding-cladding layer and the upper light-guiding-cladding layer have a continuous, non-step-like and smooth change of indium and/or aluminum content.

Abstract: A laser apparatus according to the present invention may comprise: a plurality of reflection mirrors which form a resonance path so as for light to be amplified by an induced emission; a medium having a first surface which forms a vertical surface with respect to the resonance path, and a second interface which does not form a vertical surface with respect to the resonance path, and absorbs energy from a light source and amplifies and emits the light; and a saturable absorber having a second surface which forms a vertical surface with respect to the resonance path, and a second interface which does not form a vertical surface with respect to the resonance path, and generates ultrashort pulses. The laser apparatus according to the present invention has the effects of cutting a saturable absorber having a specific crystallographic axis to thereby make polarization capacity in one direction advantageous and minimize propagation loss.

Abstract: A light emitting device includes first and second semiconductor laser elements and a collimate lens. The first semiconductor laser element irradiates a first light having a first peak wavelength in a visible range. The second semiconductor laser element irradiates a second light having a second peak wavelength in the visible range, which is different from the first peak wavelength. The collimate lens is arranged on paths of the first and second lights. The collimate lens has a plurality of lens portions including a first lens portion through which the first light passes, and a second lens portion through which the second light passes. The second lens portion is connected to the first lens portion, and the first and second lens portions are different from each other in at least one of a shape of a light incident surface, a shape of a light extracting surface, and a height.

Abstract: Method for producing ultraintense laser pulses in which Stimulated Raman Back-Scattering (SRBS) amplifies and compresses a seed pulse, as well as an inventive compact plasma device which may implement the method. SRBS may be achieved by counter-propagating the seed pulse and a pump pulse through a few millimeter-long plasma having a plasma frequency equal to the difference between the pump and the seed pulse frequencies. Dichroic mirrors may be arranged to provide two amplifying and compression passes through the plasma, allowing greater seed pulse amplification by mitigating Landau damping within the plasma that would occur in a single pass of a plasma of double the length. Alternate examples provide for 2n number of amplification and compression passes by providing n short plasma columns, where n?2, and additional, appropriately arranged dichroic mirrors. The compact size of the device, and the ultraintense, ultrashort pulses it emits, suit the device to dermatological applications.

Abstract: An ultraviolet (UV) radiation emitting device includes an epitaxial heterostructure comprising an AlGaInN active region. The AlGaInN active region includes one or more quantum well structures with Al content greater than about 50% and having a non-c-plane crystallographic growth orientation. The AlGaInN active region is configured to generate UV radiation in response to excitation by an electron beam generated by an electron beam pump source.

Abstract: A tunable laser device includes a laser structure and a plurality of individually addressable, separated contact stripes disposed on the laser structure. The laser structure includes a substrate, an active portion disposed on the substrate, and a chirped distributed feedback (DFB) grating disposed on the active portion. The active portion includes at least top and bottom contact layers and a gain medium.

Abstract: A light-emitting device includes a base body; light-emitting elements mounted on an upper surface of the base body; a frame body bonded to the upper surface of the base body, the frame body including inner lateral surfaces, outer lateral surfaces, and first through-holes that extend through the frame body in a lateral direction; lead terminals that extend through the first through-holes, and each of which is electrically connected to the light-emitting elements; a cover bonded to the frame body; plate bodies bonded to an outer lateral surface or inner lateral surface of the frame body, each of the plate bodies having one or more second through-holes, wherein each of the lead terminals extends through a respective through-hole; and fixing members, each of which is disposed in a second through-hole and fixes a respective one of the one or more lead terminals.

Abstract: A two-dimensional photonic crystal laser with transparent conductive cladding layer is provided. The two-dimensional photonic crystal region through the etching process is composed by multiple periodic air-holes with proper duty cycle. Then, the transparent conductive oxide layer is directly deposited on the top of the entire two-dimensional photonic crystal structure to cover the entire two-dimensional photonic crystal structure in order to form a current spreading layer. The configuration and the process condition of transparent conductive oxide layer are optimized to provide uniform current spreading path and the transparency. In addition to simplifying the whole fabrication process, the optical confinement is improved and the maximum gain to optical feedback is obtained. Overall, low threshold, small divergence angle and high quality laser output is achieved to satisfy the requirements for next-generation light sources.

Abstract: In a general aspect, a chirped optical pulse is compressed by operation of diffraction gratings and a dispersive mirror having a smooth reflective surface. In some aspects, a chirped pulse laser system includes a programmable optical dispersive filter (PODF) operable to modify a spectral phase of optical pulses and a pulse compressor that receives an optical pulse based on an output of the PODF. The pulse compressor includes optical elements in a vacuum chamber. The optical elements define an optical path through the pulse compressor, and are arranged to disperse the optical pulse in the optical path. The optical elements include diffraction gratings and a dispersive mirror, which has a smooth reflective surface that defines a portion of the optical path.

Abstract: A two-dimensional photonic-crystal surface-emitting laser 10 includes: a two-dimensional photonic crystal (two-dimensional photonic crystal layer 12) including a plate-shaped base body 121 having a predetermined size in which modified refractive index areas 122 whose refractive index differs from the base body are periodically arranged in a two-dimensional pattern; an active layer 11 provided on one side of the two-dimensional photonic crystal; and first and second electrodes 15 and 16 facing each other across the two-dimensional photonic crystal and the active layer 11, for supplying an electric current to the active layer 11. The modified refractive index areas 122 are provided in such a manner that the in-plane occupancy of those areas 122 in the base body 121 decreases, or the lattice constant for those areas 122 increases, in the direction from an outer edge toward the center of a current passage region 21 which is a region where the electric current passes through the two-dimensional photonic crystal.

Abstract: Methods and apparatus for spectral narrowing and wavelength stabilization of broad-area lasers, such as an apparatus including a broad-area laser source configured to emit light along an emission axis in an emission pattern extending along the emission axis, and a single-mode fiber Bragg grating, such as a single-mode core incorporating a fiber Bragg grating embedded in a core of a dual-clad fiber, the single-mode fiber Bragg grating configured to spectrally selectively reflect back light from a sub-aperture portion of the emitted light to the broad-area laser source. The single mode core having the FBG is off-axis in comparison to the central axis of the double-clad fiber and allows for frequency stabilization of the broad area laser diode output improving its performance as pump laser for a doped fiber amplifier.

Abstract: Aspects of the subject disclosure may include, for example, a first distributed Bragg reflector, a second distributed Bragg reflector, an active region with an oxide aperture between the first and second distributed Bragg reflectors, and a dielectric layer, where a positioning of the dielectric layer with respect to the first and second distributed Bragg reflectors and the oxide aperture causes suppression of higher modes of the vertical-cavity surface-emitting laser device. Other embodiments are disclosed.

Abstract: A device comprises a substrate, a sacrificial material layer over the substrate, a first solid-state material layer over the sacrificial layer, a dielectric layer over solid-state material layer, and a second solid-state material layer over the dielectric layer. The sacrificial material layer may have an airgap, the solid-state material layer may comprise a structure over the airgap and may be separated from a bulk portion of the first material layer by trenches, where the trenches extend to the airgap.

Abstract: Semiconductor lasers are arranged in a plurality of columns. The columns of the respective semiconductor lasers include semiconductor laser installed columns. Reflecting mirrors in the respective semiconductor laser installed columns reflect light in substantially the same axial direction as viewed from above, and constitute beam groups. The beam groups of the respective semiconductor laser installed columns are formed on both sides in a width direction of a housing. That is, the beam groups are configured for each of the semiconductor laser installed columns, and the respective beam groups are formed on mutually different axes as viewed from above.

Abstract: A laser system for atomic clocks and sensors includes a single laser, an intensity splitter, a modulator, and a feedback-based lock controller. The single laser outputs a central optical frequency of laser light that can be tuned. The intensity splitter splits the laser light along a first and a second optical path. A modulator is disposed in the first optical path. The portion of laser light from the first optical path is subjected to the modulator with the modulator disposed to generate a frequency-shifted sideband from some or all of the portion of the laser light subjected to the modulator, with the frequency-shifted sideband shifted by an adjustable frequency source, resulting in an adjustable frequency offset between the frequency-shifted sideband and an unmodulated carrier propagating in the second optical path. The feedback-based lock controller locks the optical frequency of the frequency-shifted sideband to a repumping transition for atom cooling.

Abstract: An electrically pumped surface-emitting photonic crystal laser includes an electric currents confinement structure arranged on a photonic crystal structure and an active layer with an opening, a transparent conducting layer arranged on the electric currents confinement structure and covering the photonic crystal structure, a metal anode arranged on the transparent conducting layer with an aperture. The photonic crystal laser has its epitaxy structure etched from above to fabricate the photonic crystal to allow laser beams to pass through with conductivity for the purpose of electrically pumping a quantum structure without complex technologies of wafer fusion bonding or epitaxial regrowth. Thereby the laser beams can be emitted from a front surface of the epitaxy structure with a narrow divergence angle.

Abstract: A laser device according to the present invention may comprise: a pumping laser supply unit for emitting a pumping laser having a nano-second pulse width; and a laser output unit disposed at one side of the pumping laser supply unit and generating an output laser which is pumped by the pumping laser to have a nano-second pulse width corresponding to the pulse width of the pumping laser.

Abstract: An optical module 1 according to an embodiment includes a plurality of laser diodes (LDs) 21 to 23, a multiplexing optical system 30 combining a plurality of laser beams from the respective plurality of LDs, and a package 10 accommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.