Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

Abstract: A light-emitting device includes an insulating base member having thermal conductivity of 10 W/m·K or more; a light-emitting element that has a cathode electrode and an anode electrode and is provided on a front surface side of the base member; a capacitive element that is provided on the base member and supplies an electric current to the light-emitting element; and a reference potential wire that is provided on a rear surface side of the base member and is connected to an external reference potential. The reference potential wire is connected to the capacitive element and is insulated from the cathode electrode and the anode electrode.

Abstract: A single-mode micro-laser based on a single whispering gallery mode optical microcavity and a preparation method thereof described includes: preparing a desired single whispering gallery mode optical microcavity doped with rare earth ions or containing a gain material such as quantum dots, wherein an optical microcavity configuration include a micro-disk cavity, a ring-shaped microcavity, and a racetrack-shaped microcavity; a material type include lithium niobate, silicon dioxide, silicon nitride, etc.; preparing an optical fiber cone or an optical waveguide of a required size which can excite high-order modes of the optical microcavity, such as a ridge waveguide and a circular waveguides; and coupling, integrating, and packaging the optical fiber cone or the optical waveguide with the microcavity. A pump light is coupled to the optical fiber cone or the optical waveguide to excite a compound mode with a polygonal configuration.

Abstract: In order to provide a QCL element operating in the near-infrared wavelength range, the present disclosure provides a quantum cascade laser element 1000 having a semiconductor superlattice structure (QCL structure 100) sandwiched between a pair of conductive sections 20 and 30. The semiconductor superlattice structure serves as an active region that emits electromagnetic waves. The active region has a plurality of unit structures 10U that are stacked on top of each other. Each unit structure includes four well layers 10W1-10W4 of a composition of AlxGa1?xN, separated from each other by barrier layers 10B1-10B5 of a composition of AlyGa1?yN with 0?x<y?1. Both of the conductive sections in the pair of conductive sections have a refractive index lower than that of the active region in which doped TCO inserted as a key role.

Abstract: Methods and apparatus for a controlling a stimulus source to direct photons to a pixel in a pixel array contained in a detector system, analyzing a response of the pixel in the pixel array; and generating an alert based on the response of the pixel in the pixel array. Example stimulus sources include a conductive trace, a PN junction, and a current source.

Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1×1018/cm3 of n-type impurity.

Abstract: The present disclosure generally relates optical amplifier modules. In one form for example, an optical amplifier module includes a booster optical amplifier configured to increase optical power of a first optical signal. The module also includes a preamp optical amplifier configured to increase optical power of a second optical signal and a pump laser optically coupled to the booster optical amplifier and the preamp optical amplifier. The pump laser is configured to provide a booster power to the booster optical amplifier and a preamp power to the preamp optical amplifier, the preamp power is effective to induce a gain in optical power to provide a target optical power of the second optical signal from the preamp optical amplifier, and the booster power is dependent on the preamp power.

Abstract: Disclosed herein is a method of optical pulse emission including three phases. During a first phase, a capacitor is charged from a supply voltage node. During a second phase, a voltage stored on the capacitor is boosted, and then the capacitor is at least partially discharged through a light emitting device. During a third phase, the capacitor is further discharged by bypassing the light emitting device. The third phase may begin prior to an end of the second phase.

Abstract: A laser system for generating a narrow linewidth semiconductor light beam includes a substrate, a gain chip affixed on the substrate and configured to amplify light beam, and an optical feedback photonic chip affixed on the substrate, optically coupled to the gain chip, and configured to output light beam, which has a narrow linewidth around a resonant frequency of the optical feedback photonic chip, to the gain chip. The optical feedback photonic chip includes first and second optical gratings, a first multimode interferometer (MMI) and a second MMI optically coupled with a respective end of the first and second optical gratings, a third MMI configured to output two light beams to the first and second MMIs, respectively, through a respective waveguide.

Abstract: A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.

Abstract: A semiconductor radiation source includes at least one semiconductor chip that generates radiation; and at least one capacitor body, wherein the semiconductor chip and the capacitor body are stacked on top of each other, the semiconductor chip directly electrically connects in a planar manner to the capacitor body, the semiconductor chip is a ridge waveguide laser, and a ridge waveguide of the semiconductor chip is arranged on a side of the semiconductor chip facing away from the capacitor body.

Abstract: A display device includes a laser irradiation device and a control device. The laser irradiation device is configured to irradiate an irradiation point located at a display position in air, with a laser beam having a wavelength equal to or larger than 380 nm and equal to or smaller than 780 nm and produce plasma at the display position. The control device is configured to control intensity of the laser beam emitted from the at least one laser irradiation device so that a relationship between intensity of plasma light emitted from the plasma at the display position and intensity of scattered light produced from the laser beam and scattered by the plasma becomes a predetermined relationship to display a color pixel.

Abstract: In various embodiments, laser systems or resonators incorporate two separate cooling loops that may be operated at different cooling temperatures. One cooling loop, which may be operated at a lower temperature, cools beam emitters. The other cooling loop, which may be operated at a higher temperature, cools other mechanical and/or optical components, for example optical elements such as lenses and/or reflectors.

Abstract: A laser package is mounted on the printed circuit board. At least one thermal via extends through the printed circuit board, coupled to the laser package. A thermal bridge is coupled to the at least one thermal via on the bottom of the printed circuit board. A thermal paste connects the thermal bridge to a conductive ground plane on the bottom of the printed circuit board, and to a mechanical housing.

Abstract: An optical apparatus comprises a semiconductor substrate, and a supermode filtering waveguide (SFW) emitter disposed on the semiconductor substrate. The SFW emitter comprises a first optical waveguide, a spacer layer, and a second optical waveguide spaced apart from the first optical waveguide by the spacer layer. The second optical waveguide is evanescently coupled with the first optical waveguide and is configured, in conjunction with the first waveguide, to selectively propagate only a first mode of a plurality of optical modes. The SFW emitter further comprises an optically active region disposed in one of the first optical waveguide and the second optical waveguide.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 ?, or at least 20 ?, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In—Au bonding. This is the first report of a VCSEL capable of continuous wave operation.

Abstract: A high repetition rate pulse laser including a linear cavity having a first direction and a second direction opposite to the first direction is disclosed. The pulse laser includes, along the first direction, a first optical component, a gain and Raman medium, an acousto-optic crystal, a first lithium triborate (LBO) crystal and a second optical component. The first optical component allows a pumping light incident in the first direction to transmit therethrough. The gain and Raman medium receives the pumping light from the first optical component, and generates a first infrared base laser light having a first wavelength and a second infrared base laser light having a second wavelength. The acousto-optic crystal receives a radio frequency control signal from a radio frequency controller, wherein the radio frequency control signal has a signal period including a low level period and a high level period.

Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

Abstract: In a WBC system of the present disclosure, an LD bar array constituted by a plurality of LD bars is configured such that a main axis direction of an off-angle of at least one LD bar is reversed with respect to a main axis direction of an off-angle of the other LD bar. By doing so, even in the LD bar in which a wavelength distribution in a wafer exists, a difference between a designed lock wavelength and a gain peak wavelength can be kept within a range where an LD oscillation due to an external resonance is possible for all emitters in the LD bar, thereby an output in the WBC system can be maximized.

Abstract: In some implementations, a thermally-controlled photonic structure may include a suspended region that is suspended over a substrate; a plurality of bridge elements connected to the suspended region and configured to suspend the suspended region over the substrate, where a plurality of openings are defined between the plurality of bridge elements; and at least one heater element having a modulated width disposed on the suspended region. The at least one heater element having the modulated width may include at least one section of a greater width and at least one section of a lesser width. The at least one section of the greater width may be in alignment with an opening of the plurality of openings and the at least one section of the lesser width may be in alignment with a bridge element of the plurality of bridge elements.