Abstract: In a metal plate resistor according to the present disclosure, each of a pair of electrodes includes a first portion and a second portion. The first portion protrudes from one surface of a resistive element to be in contact with an end of a protection film. The second portion is disposed in a corresponding recess of a pair of recesses. In a direction in which the pair of electrodes is arranged, the second portion has a length longer than a length of the first portion.

Abstract: A shunt resistor including first and second terminals made of an electrically conductive metal material, and a resistive element disposed between the first terminal and the second terminal. Each of the first terminal and the second terminal has a through-hole formed therein. At least one of the first terminal and the second terminal has a protruding portion protruding on a side thereof opposite to a portion bonded to the resistive element.

Abstract: A chip resistor includes an upper electrode provided on a substrate, a resistor element connected to the upper electrode, and a side electrode connected to the upper electrode. The side electrode, arranged on a side surface of the substrate, has two portions overlapping with the obverse surface and reverse surface of the substrate, respectively. An intermediate electrode covers the side electrode, and an external electrode covers the intermediate electrode. A first protective layer is disposed between the upper electrode and the intermediate electrode, and held in contact with the upper electrode and the side electrode. The first protective layer is more resistant to sulfurization than the upper electrode. A second protective layer is disposed between the first protective layer and intermediate electrode, and held in contact with the first protective layer, side electrode and intermediate electrode.

Abstract: A method of adjusting a switch of a device, which comprises using a biasing force-adjusting element, adjusting a magnitude of a biasing force imparted to a switching element of the switch by a biasing element disposed about the switching element, wherein the switching element is movably disposed within an interior cavity of a hollow body of the switch and the biasing force places the switching element in one of a first position and a second position. The first position corresponds to a first electrical state and the second position corresponds to a second electrical state.

Abstract: A film resistor and a film sensor are disclosed. In an embodiment a film resistor includes a piezoresistive layer comprising a M1+nAXn phase, wherein M comprises at least one transition metal, A comprises a main-group element, and X comprises carbon and/or nitrogen, and wherein n=1, 2 or 3.

Abstract: A MOV device including a MOV chip, a first base metal electrode disposed on a first side of the MOV chip, and a second base metal electrode disposed on a second side of the MOV chip opposite the first side, each of the first base metal electrode and the second base metal electrode including a first base metal electrode layer disposed on a surface of the MOV chip and formed of one of silver, copper, and aluminum, the first base metal electrode layer having a thickness in a range of 2-200 micrometers, and a second base metal electrode layer disposed on a surface of the first base metal electrode layer and formed of one of silver, copper, and aluminum, the second base metal electrode layer having a thickness in a range of 2-200 micrometers.

Abstract: A chip resistor is capable of improving surge characteristic while finely adjusting a resistance value with high accuracy. A chip resistor includes a resistor which is print-formed such that a first meandering portion is consecutively connected to a second meandering portion across a rectangular adjustment portion. The adjustment portion is provided with a first trimming groove to lengthen a current path of the resistor, thereby improving the surge characteristic while coarsely adjusting a resistance value of the resistor to bring it close to a target resistance value. Furthermore, a second trimming groove is provided in an area of the second meandering portion where a current distribution is small, thereby finely adjusting the resistance value of the resistor to make it coincide with the target resistance value in accordance with a cutting amount of the second trimming groove.

Abstract: Example human-machine interface (HMI) assemblies are disclosed. An example human-machine interface assembly can include a fascia. The human-machine interface assembly can further include a printed circuit board (PCB). The printed circuit board can have a light emitting diode (LED) to emit light through the fascia. The human-machine interface assembly can further include a backer that can be attached to the fascia.

Abstract: An object is to provide a chip resistor in which hot spots can be dispersed and the adverse effects on performance caused by microcracks can also be reduced. A chip resistor includes an insulating substrate, a resistive element, and electrodes. In the resistive element, a first trimming groove and a second trimming groove are formed. A first vertical groove of the first trimming groove and a second vertical groove of the second trimming groove are formed with a spacing in between in an X1-X2 direction. A first horizontal groove of the first trimming groove and a second horizontal groove of the second trimming groove extend in directions approaching each other, and terminal ends of the first horizontal groove and the second horizontal groove are formed to be separated in the X1-X2 direction such that the first horizontal groove and the second horizontal groove do not overlap in a Y1-Y2 direction.

Abstract: Provided is a shunt resistor mount structure comprising: a shunt resistor including a pair of electrodes and a resistive body; a current detecting substrate having a control circuit mounted thereon, the substrate having a voltage detecting portion to which a pair of voltage detection terminals of the shunt resistor are connected; and a temperature sensor for measuring a temperature of the electrodes.

Abstract: A camera control key assembly including a metal housing with a pocket containing a sensor window, a metal strip abutting a side of the sensor window, a spacer positioned to abut the metal strip, at least one capacitive touch sensor abutting the spacer, and a control key set into the pocket of the housing and contacting a first side of the sensor window. Preferably, the plastic sensor window is insert molded into the metal housing making the assembly inherently watertight. The assembly comprises at least one force concentrator on the control key to act upon the sensor window which in turn allows the capacitive touch sensor to register a multitude of different user inputs, including pressure, varied pressure, duration, taps, slides and swipes.

Abstract: A ceramic multi-layer component and a method for producing a ceramic multi-layer component are disclosed. In an embodiment a ceramic multi-layer component includes a stack with ceramic layers and electrode layers arranged between them, wherein the ceramic layers and the electrode layers are arranged above one another along a stacking direction, wherein at least one first electrode layer extends along a first main extension direction from a first end region to a second end region of the first electrode layer, and wherein the at least one first electrode layer has a current-carrying capacity that decreases along the first main extension direction.

Abstract: Nanocomposite sensing materials are formulated with low aspect ratio conductive fillers with close to or higher than percolation threshold in a low Poisson's Ratio matrix binder with a high gauge factor, low temperature coefficient of resistance (TCR), low temperature coefficient of gauge factor (TCGF), and low hysteresis.

Abstract: An externally-controllable thermal tripping device comprising a voltage dependent resistor including a voltage dependent resistor chip; a thermal tripper including a tripping electrode; and a controllable heating element. The tripping electrode is connected to an electrode of the voltage dependent resistor chip through a meltable welding material, and the controllable heating element is controlled by an external control device to generate heat and transmit generated heat to a commissure of said welding material to melt said welding material and electrically disconnect the tripping electrode from the voltage dependent resistor chip.

Abstract: A resistor component includes an insulating substrate, a resistor layer disposed on one surface of the insulating substrate and having one end and the other end opposing each other in a first direction, and first and second terminals disposed on the insulating substrate and spaced apart from each other to oppose each other in a second direction perpendicular to the first direction, and connected to the resistor layer. A slit in the resistor layer extends in the first direction, and a ratio of a length of the slit in the first direction to a length of the resistor layer in the first direction is greater than 0.7 and equal to or lower than 0.9.

Abstract: A resistor component includes an insulating substrate; a resistance layer disposed on a first surface of the insulating layer; and first and second terminals, spaced apart from each other, disposed on an external surface of the insulating substrate and connected to the resistance layer; a marking pattern portion disposed on a second surface of the insulating layer, opposing the first surface of the insulating substrate; and a marking protection layer disposed on the second surface and covering the marking pattern portion.

Abstract: The present invention discloses a method for manufacturing a high-sensitivity piezoresistive sensor using a multi-level structure design, including the following steps: forming first-level basic geometrical units formed of basic structural units on a substrate, where each first-level basic geometrical unit is a two-dimensional or three-dimensional network structure formed by stacking several basic structural units; stacking and combining several first-level basic geometrical units in an array to form a second-level geometrical structure, and forming a contact connection area located between adjacent first-level basic geometrical units; and dispensing a conductive adhesive in at least two positions on the substrate to form electrodes of a piezoresistive sensor, so as to obtain the piezoresistive sensor.

Abstract: A surge arrester includes a tubular housing and an end fitting which is connected to one end of the housing and on which a column having at least one electrical resistor is disposed. A support abuts the inner surface of the tubular housing in the region of the end fitting. The support has a recess in the longitudinal direction of the surge arrester, into which a pressure device is inserted. A method for installing a surge arrester is also provided.

Abstract: A resistive element includes: a semiconductor substrate; a field insulating film deposited on the semiconductor substrate; a plurality of resistive layers separately deposited on the field insulating film; an interlayer insulating film deposited to cover the field insulating film and the resistive layers; a pad-forming electrode deposited on the interlayer insulating film, and electrically connected to one edges of the resistive layers; a relay wire deposited on the interlayer insulating film separately from the pad-forming electrode, and including a first terminal electrically connected to another edges of the resistive layers and a second terminal provided so as to form an ohmic contact to the semiconductor substrate; and a rear surface electrode provided under the semiconductor substrate to form an ohmic contact to the semiconductor substrate, wherein the resistive element uses, as a resistor, an electric channel between the pad-forming electrode and the rear surface electrode.

Abstract: A three-dimensional thermistor device and a manufacturing method thereof. The three-dimensional thermistor device comprising a thermistor array formed on a base layer extending in first and second directions. Where the thermistor array comprises: thermistor pattern layers and insulating layers stacked alternately on the base layer in a third direction; each thermistor pattern layer including a continuous electrically conductive first trace disposed along a first path extending in both the first and second directions, and each insulating layer including an electrically conductive first via extending through the insulating layer in the third direction to electrically connect the first traces to each other.