Abstract: A sensor module includes a body including a first body part and a second body part detachably coupled to the first body part, a first sensor unit on a lower surface of the body, and configured to detect a contact area in which the lower surface of the body contacts a first external object and to output a first measurement value, a second sensor unit on a side surface of the body and configured to output a second measurement value by measuring a distance between the side surface of the body and a second external object, and a control circuit in the body part configured to control the first sensor unit and the second sensor unit and generate measurement data based on the first measurement value and the second measurement value. The first sensor unit and the second sensor unit are in the second body part.

Abstract: Apparatus provide plasma to a processing volume of a chamber. The Apparatus may comprise a plurality of plasma sources, each with at least a dielectric tube inlet which is at least partially surrounded by a conductive tube which is configured to be connected to RF power to generate plasma and a gas inlet positioned opposite the dielectric tube inlet for a process gas and a dielectric tube directly connected to each of the plurality of plasma sources where the dielectric tube is configured to at least partially contain plasma generated by the plurality of plasma sources and to release radicals generated in the plasma via holes in the dielectric tube.

Abstract: The present disclosure relates to a device for holding workpieces in a process chamber. The present disclosure additionally relates to a coating system and to a method for coating a workpiece. In order to allow for precise adjustment of the height of the position of workpieces while supporting same in a secure and stable manner, the holding device includes a platform for the workpieces, a height-adjustable first support element and a height-adjustable second support element for the platform, wherein each of the support elements has at least one first and one second limb element, wherein the respective first and the respective second limb element are coupled so as to be pivotable relative to one another about a pivot axis, and wherein the pivot axis of the first support element is arranged at an angle to the pivot axis of the second support element.

Abstract: Disclosed are a plasma processing apparatus and an adjusting method of the same. The apparatus includes: a vacuum chamber enclosed by a chamber body and a chamber lid; a movable upper electrode assembly disposed in the vacuum chamber; a bottom electrode assembly, arranged opposite the movable upper electrode assembly, the bottom electrode assembling being detachably connected with the bottom of the chamber body; a plurality of self-alignment devices each including a self-alignment upper structure and a self-alignment lower structure, the self-alignment upper structure and the self-alignment lower structure being connected to the movable upper electrode assembly and the bottom electrode assembly, respectively, wherein when the self-alignment upper structures and the self-alignment bottom structures are aligned to be jointed together, the center of the movable upper electrode assembly is aligned with that of the bottom electrode assembly.

Abstract: Provided is a batch type substrate processing apparatus that generates plasma by a plurality of electrodes to perform a processing process on a substrate. The batch type substrate processing apparatus includes a reaction tube, a plurality of electrodes, and an electrode protection part. The plurality of electrodes includes first and second power supply electrodes spaced apart from each other and first and second ground electrodes provided between the first power supply electrode and the second power supply electrode to correspond to the first power supply electrode and the second power supply electrode, respectively.

Abstract: Provided is a system including a microwave source configured to generate microwaves, a branch apparatus including an input port connected to the microwave source, first and second chambers configured to process a wafer by using the microwaves, a first filter configured to transfer the microwaves to or cut off the microwaves from the first chamber, and connected to a first output port of the branch apparatus, and a second filter configured to transfer the microwaves to or cut off the microwaves from the second chamber, and connected to a second output port of the branch apparatus.

Abstract: A substrate processing apparatus includes a hydrophobizing part configured to perform a hydrophobizing process of forming a hydrophobic film on a front surface of a substrate through vapor deposition of a hydrophobizing gas, an ultraviolet radiation part configured to radiate ultraviolet rays to a removal area on a rear surface of the substrate so as to remove the hydrophobic film formed in the removal area in the hydrophobizing process, and a resin-film forming part configured to form a fluororesin film in the removal area after the hydrophobic film is removed.

Abstract: A plasma processing apparatus disclosed herein includes a substrate support provided in a chamber; a radio-frequency power supply configured to supply radio-frequency power to generate plasma in the chamber; and a bias power supply configured to supply electric bias energy to an electrode to draw ions into a substrate on the substrate support. The electric bias energy has a cycle having a time length reciprocal to a bias frequency. The radio-frequency power supply is further configured to adjust an output power level of the radio-frequency power in a plurality of phase periods in the cycle such that an evaluation value is less than or equal to a first value, the evaluation value being a power level of reflected waves of the radio-frequency power or a value of a ratio of the power level to the output power level.

Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.

Abstract: Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include exposing an edge region to treatment gases such as etch gases and/or inhibition gases. Also provided herein are exclusion ring assemblies including multiple rings that may be implemented to provide control of the processing environment at the edge of the wafer.

Abstract: A gas delivery assembly and gas-phase reaction apparatus; the gas delivery assembly includes an internal gas delivery assembly in a central region of the gas delivery assembly and a peripheral gas delivery assembly surrounding the central region. The peripheral gas delivery assembly includes tubular channels and annular grooves communicating with the tubular channels to allow gas outflow from the tubular channels; for some tubular channels, there exists a non-zero angle ? between the main axis and a projection of its tube axis on the tangent plane with respect to the main axis, so that the gas outflow from the peripheral gas delivery assembly constitutes a rotary gas flow, and the rotation direction of the rotary gas flow is the same as that of the susceptor during reaction, thereby suppressing or eliminating vortices.

Abstract: A method for treating an exposed surface of a substrate includes purging first and second chambers of a substrate processing system using a purge gas. A gas distribution device is arranged between the first chamber and the second chamber. The method includes flowing a treatment gas to the second chamber but not the first chamber to create an adsorption layer on a surface of a substrate arranged on a substrate support in the second chamber. The method includes stopping flow of the treatment gas to the second chamber. The method includes flowing the purge gas to purge the first chamber and the second chamber. The method includes, while flowing the purge gas to the first chamber, striking plasma in the first chamber to create metastable active radical species and delivering the metastable active radical species through the gas distribution device to the second chamber to surface activate the adsorption layer.

Abstract: Embodiments disclosed herein include a plasma treatment chamber, comprising one or more sidewalls. A support surface within the one or more sidewalls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow. The first and second gas flows comprise a process gas mixture and/or an independent gas injection (IGI) mixture.

Abstract: The present disclosure describes a chuck-based device and a method for cleaning a semiconductor manufacturing system. The semiconductor manufacturing system can include a chamber, a chuck housed in the chamber and configured to hold a substrate, and a control device configured to control a translational displacement and a rotation of the chuck. The chuck can include a passage extending along a periphery of the chuck and dividing the chuck into an inner portion and an outer sidewall portion, and a first multiple of openings through the outer sidewall portion of the chuck and interconnected with the passage. The passage can be configured to transport a fluid. The first multiple of openings can be configured to dispense the fluid.

Abstract: RPCVD apparatus for forming a film is disclosed including a showerhead having at least one gas chamber, one or more plasma inlets to deliver plasma from one or more plasma generators into a reaction chamber; and a plurality of gas inlets to deliver gas from at least one gas chamber into the reaction chamber. At least one of the plasma inlets is located at a position that is between a central region and an outer region of the showerhead and off-centre from an axis of rotation. The plasma generators generate plasma in line of sight of the susceptor and the plasma inlets have openings that are larger than openings of the gas inlets. The gas inlets are configured such that a combination of all of the spatial distributions of gas from the gas inlets provides a uniform distribution of gas density on the surface of a susceptor between a central region and an outer region of the susceptor, for a full rotation of the susceptor.

Abstract: A substrate processing apparatus includes a first chamber having an inner space and an opening, a substrate support disposed in the inner space of the first chamber, an actuator configured to move the substrate support between a first position and a second position, a second chamber that is disposed in the inner space of the first chamber and defines a substrate processing space together with the substrate support when the substrate support is located at the first position, and at least one fixing mechanism configured to detachably fix the second chamber to the first chamber in the inner space of the first chamber. The second chamber is transferred between the inner space of the first chamber and an outside of the first chamber through the opening when the substrate support is located at the second position.

Abstract: A substrate processing system for processing a substrate includes an upper plasma exclusion zone ring arranged above a substrate during plasma treatment of a bevel edge of the substrate. An upper electrode is arranged above the substrate during plasma treatment. A lower plasma exclusion zone ring is at least partially arranged below the substrate during the plasma treatment. A lower electrode is at least partially arranged below the substrate during plasma treatment. The lower plasma exclusion zone ring includes an annular body with a lower portion at least partially arranged below the substrate and an upwardly projecting flange extending upwardly from the lower portion of the annular body at a location spaced from a radially outer edge of the substrate. The upwardly projecting flange includes an uppermost surface extending to one of a middle portion of the substrate in a vertical direction and above the middle portion of the substrate.

Abstract: In some embodiments, the present disclosure relates to an etching apparatus. The etching apparatus includes a substrate holder disposed within a processing chamber and having a workpiece reception surface configured to hold a workpiece. A lower surface of the processing chamber has a first region that is directly below the workpiece reception surface and that is configured to receive a byproduct from an etching process. A baffle extends outward from a sidewall of the processing chamber at a vertical position between the substrate holder and the lower surface of the processing chamber. The baffle covers a second region of the lower surface. A byproduct redistributor is configured to move the byproduct from the first region of the lower surface to the second region of the lower surface that is directly below the baffle.

Abstract: Disclosed is a plasma processing apparatus comprising a plasma electrode, an electrostatic chuck, and a diode board. The electrostatic chuck includes a microheater layer and a chuck electrode. The microheater layer includes an inner heater part and an outer heater part. The inner heater part includes a first inner heater in a first inner region that circumferentially surrounds a center of the microheater layer, and a second inner heater in a second inner region that circumferentially surrounds the first inner region. The outer heater part includes a first outer heater in a first outer region that circumferentially surrounds the second inner region, and a second outer heater in a second outer region that circumferentially surrounds the first outer region. A distance between centers of the first and second outer heaters is less than that between centers of the first and second inner heaters.

Abstract: A stage for mounting a substrate thereon, includes: an electrostatic chuck configured to attract the substrate; a base having a first region on which the electrostatic chuck is supported and a second region on which an edge ring arranged around the substrate is supported, the first region and the second region being divided by a groove extending in an annular shape; and a shield provided in the groove and configured to thermally separate the first region and the second region.