Abstract: A method of manufacturing a semiconductor memory device includes forming a preliminary source structure including a source sacrificial layer, forming a preliminary stacked structure including insulating layers and first sacrificial layers over the preliminary source structure, forming a slit passing through the preliminary stacked structure, removing the first sacrificial layers through the slit to define first recess regions between the insulating layers, forming a second sacrificial layer in each of the first recess regions, removing the source sacrificial layer through the slit to define a second recess region, and forming a source channel coupling layer in the second recess region.

Abstract: A semiconductor die includes a semiconductor body, and a multi-layer environmental barrier on the semiconductor body. The multi-layer environmental barrier includes a plurality of sublayers that are stacked on the semiconductor body. Each of the sublayers comprises a respective stress in one or more directions, where the respective stresses of at least two of the sublayers are different. The sublayers may include a first stressor sublayer comprising first stress, and a second stressor sublayer comprising a second stress that at least partially compensates for the first stress in the one or more directions. Related devices and methods of fabrication are also discussed.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a gate structure arranged over a substrate and a source/drain region arranged within the substrate along a side of the gate structure. The source/drain region includes a first layer lining interior sidewalls and a horizontally extending surface of the substrate, and a second layer lining interior sidewalls and a horizontally extending surface of the first layer. The first layer has a strain inducing component with a first strain inducing component concentration that continually decreases from an outermost sidewall of the first layer facing the substrate to one of the interior sidewalls of the first layer.

Abstract: The semiconductor wiring has the N-well layer of the impurity layer in the P substrate formed in the region where the poly wiring and P substrate face each other, wherein the N-well layer is electrically floating, is not used as a circuit element, and does not input or output signals. The semiconductor wiring is used as a transmission path of a high voltage signal, and used for a wiring that transmits a write signal of information at the memory cell array of the semiconductor memory device.

Abstract: In described examples, a device includes a semiconductor substrate; a buried layer; and a trench with inner walls extending from the buried layer to a surface of the semiconductor substrate, the trench having sidewalls, a bottom wall, a barrier layer including a titanium (Ti) layer covering the sidewalls and the bottom wall, and a filler including more than one layer of conductor material formed on the barrier layer.

Abstract: A semiconductor device, and a method of manufacturing a semiconductor device, includes first stack structures enclosing first channel structures and spaced apart from each other. The first channel structures are spaced apart from each other at a first distance in each of the first stack structures and the first stack structures are spaced apart from each other at a second distance.

Abstract: An imaging device according to an embodiment of the present disclosure includes: a first wiring layer; a first insulating film; a second insulating film; and a first electrically conducive film. The first wiring layer includes a plurality of first wiring lines extending in one direction. The first insulating film is stacked on the first wiring layer. The first insulating film forms a gap between the plurality of adjacent first wiring lines. The second insulating film is stacked on the first insulating film. The second insulating film has a planar surface. The first electrically conducive film is right opposed to at least a portion of the plurality of first wiring lines with the first insulating film and the second insulating film interposed in between.

Abstract: A system having a removable electronic component employs an abrasion-resistant thermally conductive film as a thermal interface between the removable electronic component and a heat sink. The abrasion-resistant film reduces thermal impedance between the removable electronic component and the heat sink when the removable electronic component is repeatedly installed and removed from a chamber in a host device. The abrasion-resistant film includes a polymer formed from a silicone-containing resin and an inorganic particulate filler; the film may also be interlocked with a corrosion protection layer at the heat sink. A method of forming a heat sink is provided that minimizes increases in thermal impedance.

Abstract: There is disclosed a packaged semiconductor device comprising: a leadframe having a first thickness; the leadframe comprising a die pad; a semiconductor die thereabove; and epoxy therebetween and arranged to bond the semiconductor die to the die pad; wherein in at least one region under the semiconductor die, the die pad has a second thickness less than the first thickness; wherein the die pad has at least one through-hole in the at least one region; and wherein the epoxy fills the at least one through-hole and extends thereunder and laterally beyond the through-hole. Corresponding leadframes, and an associated method of manufacture are also disclosed.

Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a memory stack of gate layers and insulating layers. The gate layers and the insulating layers are stacked alternatingly and are formed into stair steps in a staircase region. The semiconductor device includes a first landing pad on a first gate layer of a first stair step. The first gate layer is a top gate layer of the first stair step. The semiconductor device further includes a first sidewall isolation structure on a riser sidewall of a second gate layer of a second stair step. The second gate layer is a top gate layer of the second stair step and is stacked on the first gate layer in the memory stack. The first sidewall isolation structure isolates the second gate layer from the first landing pad.

Abstract: Embodiments disclosed herein include package substrates and methods of forming such package substrates. In an embodiment a package substrate comprises a core with a first surface and a second surface opposite from the first surface. In an embodiment, a buildup layer is over the first surface of the core. In an embodiment, a channel is through the core, where the channel extends in a direction that is substantially parallel to the first surface.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The manufacturing method includes steps of: depositing an N-drift layer on a substrate, conducting an ion implant process on the N-drift layer to form a plurality of P-type pillars, depositing a N-type epitaxial layer on the P-type pillars, conducting an ion implant process on the N-type epitaxial layer to form a first P-type epitaxial layer and at least one localized P region, conducting a field oxidation to the first P-type epitaxial layer to form a second P-type epitaxial layer, and forming a field oxide layer on the first P-type epitaxial layer and the N-type epitaxial layer. The localized P region passes though the N-type epitaxial layer to the field oxide layer.

Abstract: A semiconductor device including an element substrate having a first surface on which a terminal is arranged, a light transmissive substrate having a second surface that is coupled to the first surface via a coupling member, a wiring board having a third surface connected to the terminal, and a reinforcing member configured to reinforce bonding between the element substrate and the wiring board. The terminal is arranged along a first side of the first surface. A side surface of the light transmissive substrate includes a fourth surface arranged along the first side. A chamfered fifth surface is arranged between the second surface and the fourth surface. The coupling member contacts the fifth surface, and the reinforcing member contacts a sixth surface of the wiring board on an opposite side of the third surface, the peripheral region and the fourth surface.

Abstract: A method of manufacturing a semiconductor structure is provided. The method includes the following operations: providing a semiconductor substrate; performing a first cutting operation along a first set of cutting lines of the semiconductor substrate; and performing a second cutting operation along a second set of cutting lines of the semiconductor substrate later than performing the first cutting operation, wherein the second set of cutting lines are arranged interlacedly with the first set of cutting lines along a first direction.

Abstract: A memory cell is provided in an isolation layer on a side of a substrate, the isolation layer includes an accommodation hole, the memory cell includes a channel layer, an insulating dielectric layer, a gate layer and a gate dielectric layer. The channel layer includes a first channel and a second channel spaced apart and stacked, the first channel is provided in the accommodation hole, the second channel is at least partially provided in the accommodation hole, the gate layer includes a first gate and a second gate, the first gate is formed within the first inner hole and directly or indirectly connected to the second channel, and the second gate is at least partially formed within the second inner hole; and a gate dielectric layer is formed between the gate layer and the channel layer.

Abstract: A method for forming semiconductor devices includes: attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices; forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure; and reducing a thickness of the wide band-gap semiconductor wafer after attaching the glass structure. Additional methods for forming semiconductor devices are described.

Abstract: A semiconductor package is provided.

Abstract: A light-emitting panel includes a substrate, a light-emitting element, and a package assembly. The package assembly includes a light-transmitting substrate and a light-shielding layer. The light-shielding layer includes a plurality of light-shielding portions arranged at intervals. The light-shielding portions are connected to the light-transmitting substrate. Two adjacent light-shielding portions and the light-transmitting substrate form an accommodation space. The light-emitting element is located in the accommodating space. A light emitted by the light-emitting element pass through the package assembly.

Abstract: A semiconductor die includes a semiconductor body, and a multi-layer environmental barrier on the semiconductor body. The multi-layer environmental barrier includes first and second sublayers of first and second oxide materials, respectively, where the first oxide material is different than the second oxide material. Related devices and fabrication methods are also discussed.

Abstract: A method of configuring an orientation-agnostic inkjet print module for use in either one of first or second module orientations relative to a media path, the second module orientation being rotated 180 degrees relative to the first module orientation. The method includes the steps of: configuring a key assembly to correspond with either one of the first or second module orientations, the key assembly determining a printhead orientation of a respective printhead relative to the inkjet print module; and configuring a switch to correspond with either one of the first or second module orientations, the switch being operably connected to controller circuitry distributing data signals to the printhead via first and second data paths. The switch inverts distribution of the data signals between the first and second data paths.