Abstract: In the manufacture of a semiconductor device, e.g. a bipolar or MOS transistor, a narrow beam (4) of ions is deflected across a major surface of a semiconductor device body (1,2) to implant ions, e.g. a boron, into a region (3) of the body. In accordance with the invention a resist mask (5a) is obtained autoregistered with the implanted region (3) by effecting the implantation through a layer (5) of ion-sensitive resist thus exposed by the ion beam (4) in the area (5a) overlying the implanted region (3) at the same time as the implantation occurs into the body region (3). The non-exposed area of the layer (3) is afterwards removed by developing the resist, and the ion-exposed area (5a) is then used as a mask during a subsequent processing step, e.g. an etching or doping step, in the device manufacture. The implanted region (3) may be, e.g., a peripheral base region portion of a bipolar transistor or a parasitic-channel stopper below a field insulating layer (2) of an MOS integrated circuit.

Abstract: A method of manufacturing an integrated circuit having a multilayer structure where the method includes the steps of depositing a thin layer of low temperature oxide (LTO) on top of conductors and then spinning and curing a thin layer of spin-on-glass to planarize the surface of the device. This structure is then plasma etched to remove the spin-on-glass and a portion of the LTO at approximately the same rate. The structure is then dipped in a mild potassium hydroxide solution to completely remove the SOG material, even from the crevices and gaps which are present on the surface. This enables the device to be manufactured free of any organic substances from the SOG in the body of the structure. A passivation layer can now be deposited to protect the underlying circuitry from ionic contamination, water vapor penetration and handling.

Abstract: A method for manufacturing a semiconductor device comprising at least a support body and a monocrystalline semiconductor body, in which both bodies are provided with at least one flat optically smooth surface obtained by means of bulk-reducing polishing (mirror polishing), and at least the semiconductor body is then provided at the optically smooth surface with an electrically insulating layer with at least the electrically insulating layer on the semiconductor body being subjected to a bonding-activating operation, whereupon both bodies after their flat surfaces have been cleaned, are contacted with each other in a dust-free atmosphere in order to obtain a rigid mechanical connection, after which they are subjected to a heat treatment of at least 250.degree. C., whereupon the semiconductor body is etched to a thin layer having a thickness lying between 0.05 and 100 .mu.m.

Abstract: Field oxide regions are formed between active regions of a silicon substrate by forming over the substrate a sandwich of silicon dioxide, silicon nitride and silicon dioxide layers, opening the layers to expose a portion of the silicon substrate, removing a layer of the exposed substrate, forming side wall spacers on the edges of the opening, removing a layer of the silicon substrate exposed between the side wall spacers, and then reaching the exposed substrate for the thermal oxidation of the exposed substrate for forming the field oxide region. In those structures in which the field oxide is buried in the substrate as shown in FIG. 12, it may be feasible to use thicker field oxide regions and thereby to reduce the need for the heavily doped surface layer under the field oxide.

Abstract: Disclosed is a method of providing solder on selected portions of a printed circuit board. Solder is first electroplated over copper conductor patterns on the board by means of a first photoresist layer. After stripping the first photoresist, a second photoresist layer is laminated over the board and developed to expose selected portions of the solder. The exposed portions are selectively stripped. The copper exposed by the selective stripping is then subjected to a scrubbing while the photoresist protects the remaining solder, and the second photoresist is removed.

Abstract: A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

Abstract: A descaling method for the inside of jackets of glass-lined instruments is disclosed, comprising using a hydrochloric acid solution comprising at least one compound selected from the group consisting of laurylamine, lauryldimethylamine and propargyl alcohol, with or without tin(II) chloride.

Abstract: A process for defining vias through a polyimide and silicon nitride layer is disclosed. After the deposition of a first layer of silicon nitride and a second layer of polyimide, a layer of photoresist capable of producing negatively sloped walls is then lithographically defined with a pattern of vias. After the photoresist is developed, the polyimide layer is etched with a CF.sub.4 O.sub.2 gas mixture using the developed photoresist layer as etch mask. The silicon nitride layer is then etched with a CF.sub.4 /H.sub.2 gas mixture using the etched polyimide layer as an etch mask.

Abstract: An optical transmission fiber comprising (1) a core of high refractive index composed of SiO.sub.2 -based glass containing at least one of GeO.sub.2, As.sub.2 O.sub.3, Sb.sub.2 O.sub.5, SnO.sub.2, TiO.sub.2, PbO and Bi.sub.2 O.sub.3, (2) a clad of low refractive index composed of SiO.sub.2 -based glass containing at least one of B.sub.2 O.sub.3, F, F/B.sub.2 O.sub.3 and F/P.sub.2 O.sub.5, and (3) an outermost jacket layer composed of SiO.sub.2 and/or SiO.sub.2 -based glass containing at least one of Al.sub.2 O.sub.3, TiO.sub.2, ZrO.sub.2 and HfO.sub.2.

Abstract: A system (10) is provided for etching a surface (14). A vacuum enclosure (12) is provided to create a vacuum around containers (13) and the surface to be etched (14). A pressurized gas source (16) is utilized to input gas into the containers (13). A wire coil (38) is wrapped around the containers (13) and provided with an oscillator (40) to generate radio frequency energy. The radio frequency energy excites the gas within the containers (13) which is then discharged through an output opening (46) toward the surface to be etched (14). A vacuum pump (20) is provided to evacuate the enclosure (12).

Abstract: Halide fibres are protected by coatings up to 2 .mu.m thick of chalcogenide glasses, eg glasses based on compounds of S, Se or Te with Ge or As. The coatings are deposited on the fibre preform by ion deposition sputtering. Preferably the preform is ethced by directing a stream of inert ions at it. Most suitably the etching immediately precedes the coating.

Abstract: The present invention relates to a semiconductor photoelectric conversion device which has a laminate member composed of a plurality of PIN structures formed one on the other. The manufacturing method includes a laminate member forming step and an electrode forming step. In the laminate member forming step, the first and second PIN structures and the transparent conductive layers are formed. In the electorde forming step a metal layer is annealed to form a metal silicide layer and the remaining metal layer is removed.

Abstract: A process and apparatus for etching semiconductor surfaces, in particular, ilicon, with a mixture containing nitrogen-oxygen based compounds as oxidizing compounds, hydrofluoric acid as the component which dissolves the oxidation product, and sulfuric acid, optionally with phosphoric acid added, as a carrier medium. This mixture makes it possible to design the process as a cyclic process in which oxygen supplied to the system ultimately effects an oxidation of the material to be etched, and the product of its oxidation is removed from the circuit. The process is noteworthy for its low usage of reagents and because it is not harmful to the environment.

Abstract: In a method for the formation of an isolating oxide layer on a silicon substrate, an anti-nitridation layer is formed on a silicon substrate at locations where isolating oxide is desired. The anti-nitridation layer has openings therethrough which expose the silicon substrate at locations where isolating oxide is not desired. A thin silicon nitride layer is selectively grown at the locations where isolating oxide is not desired by nitridation of the exposed silicon substrate. Isolating oxide is then selectively grown at the locations where isolating oxide is desired. The thin silicon nitride layer inhibits oxide growth at the locations where isolating oxide is not desired. The method reduces "bird's beak" formation and is particularly applicable to high density IGFET devices.

Abstract: A simplified detection implement for use in the biological or chemical tests such as medical, pharmaceutical, microbiological, enzymological or analytical tests comprising an adhesive sheet (1) having an adhesion material layer (4), the adhesion sheet (1) also having an area "a" in an optimal shape and an area "b" in an optimal shape with a folding line (6) at the border of areas "a" and "b"; a small test material (3) adhered to the adhesion material layer (4) and being placed approximately at the center of area "a" of the adhesive sheet (1); and a peelable protection sheet (2) covering the surface of the adhesion material layer (4) and having an opening (5) big enough to expose the whole surface of the small test material (3) as well as being so positioned to expose the small test material (3) when areas "a" and "b" are overlapped by folding the adhesive sheet (1) at the folding line (6), and when areas "a" and "b" being overlapped the majority or part of area "a" of the adhesive sheet (1) acts as the adhesi

Abstract: A method of making a tandem type semiconductor photoelectric conversion device, comprising steps of: forming laminate member on a substrate by laminating first and second PIN structure of non-single crystal semiconductor in that order (or in the reverse order); forming an electrode on the laminate member; and crystallization an I-type layer of the second PIN structure by light irradiation (a) through the electrode (in this case, the electrode is transparent), or (b) from the side opposite from the substrate before formation of the electrode (or (a) from the side opposite from the substrate before formation of the first PIN structure, or (b) through the substrate (in this case, the substrate is transparent)).

Abstract: A raw material supplying device having a gas tight tank for receiving a material to be gasified by heating; a heater for heating the raw material within the tank and a plurality of pipes for conveying a plurality of streams of gas in parallel to each other to a plurality of ports of a reaction apparatus, and a process for using the raw material supplying device. The raw material supplying device can be used in a system for manufacturing glass fibers in which the ends of the plurality of pipes are connected to the gas feed ports of at least one multi-layer burner.

Abstract: A method of manufacturing a liquid jet recording head having a discharge port for discharging liquid therethrough, comprising the steps, forming thermal energy generating structure for generating thermal energy utilized for discharging recording liquid on a support member; forming an upper layer on the thermal energy generating structure; forming a photo-resist layer on the upper layer; and etching the upper layer and the photo-resist layer to form a protective layer for the thermal energy generating structure.

Abstract: Disinfectant composition and disinfection process for infected liquids or surfaces using, in addition to ions of at least one metal selected among copper, silver and manganese, a quaternary ammonium polymer or copolymer obtained by condensation of at least one difunctional tertiary amine with an organic halide.

Abstract: A graphic artwork includes a thin film coating layer thereon which includes a copper oxide which is substantially opaque to ultraviolet light and partially transmissive to visible light and suitable for printing circuiting on a printed circuit board or for other graphic artwork. In the case where the thin film compound includes unoxidized copper, etching thereof to achieve a predetermined pattern on the graphic artwork is facilitated by using a mixture of ammonium chloride and hydrogen peroxide.